JP6839280B2 - GaNトランジスタに基づく電力コンバータのためのブートストラップキャパシタ過電圧管理回路 - Google Patents
GaNトランジスタに基づく電力コンバータのためのブートストラップキャパシタ過電圧管理回路 Download PDFInfo
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- 239000003990 capacitor Substances 0.000 title claims description 43
- 238000000034 method Methods 0.000 claims description 11
- 230000000295 complement effect Effects 0.000 claims description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 20
- 229910002601 GaN Inorganic materials 0.000 description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000004891 communication Methods 0.000 description 4
- 230000001360 synchronised effect Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 206010061217 Infestation Diseases 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/569—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for protection
- G05F1/571—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for protection with overvoltage detector
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
- H02M1/0006—Arrangements for supplying an adequate voltage to the control circuit of converters
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/042—Modifications for accelerating switching by feedback from the output circuit to the control circuit
- H03K17/04206—Modifications for accelerating switching by feedback from the output circuit to the control circuit in field-effect transistor switches
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/06—Modifications for ensuring a fully conducting state
- H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0063—High side switches, i.e. the higher potential [DC] or life wire [AC] being directly connected to the switch and not via the load
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0072—Low side switches, i.e. the lower potential [DC] or neutral wire [AC] being directly connected to the switch and not via the load
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0081—Power supply means, e.g. to the switch driver
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Automation & Control Theory (AREA)
- Radar, Positioning & Navigation (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Power Conversion In General (AREA)
- Electronic Switches (AREA)
- Dc-Dc Converters (AREA)
Description
VCB=VDR−VRDB−VDB+VQ2
に充電される。ここで、VDRはドライバ電圧であり、VDBはブートストラップダイオード24の順方向降下であり、VRDBは、ブートストラップキャパシタ充電速度を制限する任意の抵抗RDBの両端での電圧降下であり、VQ2は、ローサイドトランジスタ14(Q2)にかかる電圧である。ブートストラップキャパシタ22(CB)が十分に充電されるとき、ブートストラップダイオード24(DB)は遮断し始め、充電周期を終了する。
Claims (15)
- ハーフブリッジトポロジにおいて構成される電気回路であって、
ハイサイドトランジスタ及びローサイドトランジスタであり、夫々がソース、ドレイン及びゲートを有しており、前記ハイサイドトランジスタのソースが第1ノードで前記ローサイドトランジスタのドレインへ電気的に接続される、前記ハイサイドトランジスタ及び前記ローサイドトランジスタと、
前記ハイサイドトランジスタのゲートへ電気的に結合されるゲートドライバと、
前記ゲートドライバと並列に電気的に結合されるブートストラップキャパシタと、
カソード及びアノードを有しているシャントダイオードであり、該シャントダイオードの前記カソードが第2ノードで前記キャパシタへ接続され、前記シャントダイオードの前記アノードが接地へ接続され、前記シャントダイオードが前記ブートストラップキャパシタを充電するよう低電圧降下経路を設ける、前記シャントダイオードと、
前記シャントダイオードを前記第1ノードから切り離すよう且つ前記シャントダイオードを流れる電流を制御及び制限するよう前記第1ノードと前記第2ノードとの間に電気的に接続されるシャント抵抗と
を有する電気回路。 - 前記ハイサイドトランジスタ及び前記ローサイドトランジスタは、エンハンスメントモードGaNトランジスタである、
請求項1に記載の電気回路。 - 前記シャント抵抗と逆並列に電気的に接続されるターンオンダイオードを更に有する
請求項1に記載の電気回路。 - 前記ターンオンダイオードと直列にターンオン抵抗を更に有する
請求項3に記載の電気回路。 - 前記シャント抵抗と直列に接続される第2シャントダイオードを更に有する
請求項3に記載の電気回路。 - 更なるハイサイドトランジスタの各々のソースへ接続される更なるシャントダイオード及びシャント抵抗を更に有する
請求項1に記載の電気回路。 - 前記シャントダイオードは、シャントトランジスタにより置き換えられ、該シャントトランジスタは、前記ローサイドトランジスタのゲートへ印加される信号と補完的であるゲート駆動信号により駆動される、
請求項1に記載の電気回路。 - 前記ゲートドライバ、前記ブートストラップキャパシタ、前記シャントダイオード及び前記シャント抵抗は全てが完全に、単一集積回路にモノリシックに集積される、
請求項1に記載の電気回路。 - 前記集積回路は、前記ハイサイドトランジスタ及び前記ローサイドトランジスタと、当該電気回路の受動部品を含む、
請求項8に記載の電気回路。 - ハーフブリッジ構成において構成される電気回路においてゲート駆動過電圧を回避する方法であって、
前記電気回路のハーフブリッジは、ソース、ドレイン及びゲートを夫々有しているハイサイドトランジスタ及びローサイドトランジスタを有し、前記ハイサイドトランジスタのソースが第1ノードで前記ローサイドトランジスタのドレインへ電気的に接続され、
前記電気回路は、前記ハイサイドトランジスタのゲートへ電気的に結合されるゲートドライバと、該ゲートドライバと並列に電気的に結合されるブートストラップキャパシタとを更に有し、
当該方法は、前記ハイサイドトランジスタ及び前記ローサイドトランジスタが両方ともオフであるときに、前記ローサイドトランジスタと並列に電気的に接続されたシャントネットワークを通じて前記ブートストラップキャパシタを充電することを有し、前記シャントネットワークが、前記ローサイドトランジスタの逆電圧降下と比べて低電圧降下充電経路を設け、
前記シャントネットワークは、
カソード及びアノードを有しているシャントダイオードであり、該シャントダイオードの前記カソードが第2ノードで前記キャパシタへ接続され、前記シャントダイオードの前記アノードが接地へ接続される、前記シャントダイオードと、
前記シャントダイオードを前記第1ノードから切り離すよう且つ前記シャントダイオードを流れる電流を制御及び制限するよう前記第1ノードと前記第2ノードとの間に電気的に接続されるシャント抵抗と
を有する、
方法。 - 前記ハイサイドトランジスタ及び前記ローサイドトランジスタは、エンハンスメントモードGaNトランジスタである、
請求項10に記載の方法。 - 前記シャントネットワークは、前記シャント抵抗に対して逆並列に電気的に接続されるターンオンダイオードを更に有する、
請求項10に記載の方法。 - 前記シャントネットワークは、前記ターンオンダイオードと直列にターンオン抵抗を更に有する、
請求項12に記載の方法。 - 前記シャントネットワークは、前記シャント抵抗と直列に配置される第2シャントダイオードを更に有する、
請求項13に記載の方法。 - 前記シャントダイオードは、シャントトランジスタにより置き換えられ、該シャントトランジスタは、前記ローサイドトランジスタのゲートへ印加される信号と補完的であるゲート駆動信号により駆動される、
請求項10に記載の方法。
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US201662428854P | 2016-12-01 | 2016-12-01 | |
US62/428,854 | 2016-12-01 | ||
PCT/US2017/063442 WO2018102299A1 (en) | 2016-12-01 | 2017-11-28 | Bootstrap capacitor over-voltage management circuit for gan transistor based power converters |
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JP6839280B2 true JP6839280B2 (ja) | 2021-03-03 |
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JP (1) | JP6839280B2 (ja) |
KR (1) | KR102236287B1 (ja) |
CN (1) | CN110024290B (ja) |
DE (1) | DE112017006120B4 (ja) |
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US10644601B2 (en) * | 2018-06-22 | 2020-05-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Dead-time conduction loss reduction for buck power converters |
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CN110661427B (zh) * | 2019-09-27 | 2020-07-24 | 浙江大学 | 基于氮化镓器件有源箝位反激式ac-dc变换器的数字控制装置 |
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WO2018102299A1 (en) | 2018-06-07 |
JP2019537417A (ja) | 2019-12-19 |
DE112017006120B4 (de) | 2020-12-10 |
CN110024290B (zh) | 2021-04-13 |
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US10454472B2 (en) | 2019-10-22 |
TW201826677A (zh) | 2018-07-16 |
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