SG38084G - Semi-conductor floating gate memory cell with write and erase electrodes - Google Patents
Semi-conductor floating gate memory cell with write and erase electrodesInfo
- Publication number
- SG38084G SG38084G SG380/84A SG38084A SG38084G SG 38084 G SG38084 G SG 38084G SG 380/84 A SG380/84 A SG 380/84A SG 38084 A SG38084 A SG 38084A SG 38084 G SG38084 G SG 38084G
- Authority
- SG
- Singapore
- Prior art keywords
- write
- semi
- memory cell
- floating gate
- gate memory
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE3007892A DE3007892C2 (de) | 1980-03-01 | 1980-03-01 | Floating-Gate-Speicherzelle |
Publications (1)
Publication Number | Publication Date |
---|---|
SG38084G true SG38084G (en) | 1985-09-13 |
Family
ID=6095997
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG380/84A SG38084G (en) | 1980-03-01 | 1984-05-23 | Semi-conductor floating gate memory cell with write and erase electrodes |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP0035160B1 (ja) |
JP (1) | JPS56134776A (ja) |
DE (2) | DE3007892C2 (ja) |
HK (1) | HK45485A (ja) |
IE (1) | IE50819B1 (ja) |
SG (1) | SG38084G (ja) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57141969A (en) * | 1981-02-27 | 1982-09-02 | Toshiba Corp | Nonvolatile semiconductor memory |
DE3141390A1 (de) * | 1981-10-19 | 1983-04-28 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Floating-gate-speicherzelle, bei der das schreiben und loeschen durch injektion heisser ladungstraeger erfolgt |
JPS6288368A (ja) * | 1985-10-15 | 1987-04-22 | Seiko Instr & Electronics Ltd | 半導体不揮発性メモリ |
JPS6289364A (ja) * | 1985-10-16 | 1987-04-23 | Seiko Instr & Electronics Ltd | 不揮発性半導体記憶装置 |
JPS62265767A (ja) * | 1986-05-14 | 1987-11-18 | Toshiba Corp | 不揮発性半導体装置の製造方法 |
USRE37308E1 (en) * | 1986-12-22 | 2001-08-07 | Stmicroelectronics S.R.L. | EEPROM memory cell with a single level of polysilicon programmable and erasable bit by bit |
IT1199828B (it) * | 1986-12-22 | 1989-01-05 | Sgs Microelettronica Spa | Cella di memoria eeprom a singolo livello di polisilicio scrivibile e cancellabile bit a bit |
JPS6489370A (en) * | 1987-09-29 | 1989-04-03 | Matsushita Electronics Corp | Semiconductor storage device |
JP2511495B2 (ja) * | 1988-05-23 | 1996-06-26 | 沖電気工業株式会社 | 不揮発性半導体記憶装置 |
JPH0575134A (ja) * | 1991-08-16 | 1993-03-26 | Rohm Co Ltd | 半導体記憶装置 |
KR930006954A (ko) * | 1991-09-25 | 1993-04-22 | 리차드 데이비드 로만 | 개선된 지속 특성을 갖는 전기적 소거가능 프로그램 가능 판독 전용 메모리(eeprom) |
JP3269659B2 (ja) * | 1992-05-27 | 2002-03-25 | 直 柴田 | 半導体装置 |
WO2004015745A2 (en) * | 2002-08-13 | 2004-02-19 | General Semiconductor, Inc. | A dmos device with a programmable threshold voltage |
US8320191B2 (en) | 2007-08-30 | 2012-11-27 | Infineon Technologies Ag | Memory cell arrangement, method for controlling a memory cell, memory array and electronic device |
WO2010029618A1 (ja) * | 2008-09-10 | 2010-03-18 | 株式会社アドバンテスト | メモリデバイス、メモリデバイスの製造方法、およびデータ書込方法 |
US7907451B2 (en) | 2008-12-08 | 2011-03-15 | Empire Technology Development Llc | Semiconductor storage device and method of manufacturing same |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2445091A1 (de) * | 1974-09-20 | 1976-04-01 | Siemens Ag | Speicher-fet mit isoliertem, floatendem speichergate |
US4122544A (en) * | 1976-12-27 | 1978-10-24 | Texas Instruments Incorporated | Electrically alterable floating gate semiconductor memory device with series enhancement transistor |
US4184207A (en) * | 1978-01-27 | 1980-01-15 | Texas Instruments Incorporated | High density floating gate electrically programmable ROM |
-
1980
- 1980-03-01 DE DE3007892A patent/DE3007892C2/de not_active Expired
-
1981
- 1981-02-17 EP EP81101105A patent/EP0035160B1/de not_active Expired
- 1981-02-17 DE DE8181101105T patent/DE3160505D1/de not_active Expired
- 1981-02-27 IE IE421/81A patent/IE50819B1/en unknown
- 1981-02-28 JP JP2769481A patent/JPS56134776A/ja active Pending
-
1984
- 1984-05-23 SG SG380/84A patent/SG38084G/en unknown
-
1985
- 1985-06-13 HK HK454/85A patent/HK45485A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
EP0035160B1 (de) | 1983-06-29 |
IE810421L (en) | 1981-09-01 |
DE3160505D1 (en) | 1983-08-04 |
DE3007892A1 (de) | 1981-09-10 |
HK45485A (en) | 1985-06-21 |
JPS56134776A (en) | 1981-10-21 |
EP0035160A1 (de) | 1981-09-09 |
IE50819B1 (en) | 1986-07-23 |
DE3007892C2 (de) | 1982-06-09 |
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