JPS56134776A - Semiconductor storage cell - Google Patents

Semiconductor storage cell

Info

Publication number
JPS56134776A
JPS56134776A JP2769481A JP2769481A JPS56134776A JP S56134776 A JPS56134776 A JP S56134776A JP 2769481 A JP2769481 A JP 2769481A JP 2769481 A JP2769481 A JP 2769481A JP S56134776 A JPS56134776 A JP S56134776A
Authority
JP
Japan
Prior art keywords
storage cell
semiconductor storage
semiconductor
cell
storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2769481A
Other languages
English (en)
Inventor
Giyuntaa Adamu Furitsutsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
Original Assignee
Deutsche ITT Industries GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche ITT Industries GmbH filed Critical Deutsche ITT Industries GmbH
Publication of JPS56134776A publication Critical patent/JPS56134776A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
JP2769481A 1980-03-01 1981-02-28 Semiconductor storage cell Pending JPS56134776A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE3007892A DE3007892C2 (de) 1980-03-01 1980-03-01 Floating-Gate-Speicherzelle

Publications (1)

Publication Number Publication Date
JPS56134776A true JPS56134776A (en) 1981-10-21

Family

ID=6095997

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2769481A Pending JPS56134776A (en) 1980-03-01 1981-02-28 Semiconductor storage cell

Country Status (6)

Country Link
EP (1) EP0035160B1 (ja)
JP (1) JPS56134776A (ja)
DE (2) DE3007892C2 (ja)
HK (1) HK45485A (ja)
IE (1) IE50819B1 (ja)
SG (1) SG38084G (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62265767A (ja) * 1986-05-14 1987-11-18 Toshiba Corp 不揮発性半導体装置の製造方法
JPS6489370A (en) * 1987-09-29 1989-04-03 Matsushita Electronics Corp Semiconductor storage device
JPH01293568A (ja) * 1988-05-23 1989-11-27 Oki Electric Ind Co Ltd 不揮発性半導体記憶装置
JPH0575134A (ja) * 1991-08-16 1993-03-26 Rohm Co Ltd 半導体記憶装置
WO1993024957A1 (en) * 1992-05-27 1993-12-09 Nippon Telegraph And Telephone Corporation Semiconductor device
WO2010029618A1 (ja) * 2008-09-10 2010-03-18 株式会社アドバンテスト メモリデバイス、メモリデバイスの製造方法、およびデータ書込方法
WO2010067407A1 (ja) * 2008-12-08 2010-06-17 ハングリー・シー・アセッツ・エル・エル・ピー 半導体記憶デバイスおよびその製造方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57141969A (en) * 1981-02-27 1982-09-02 Toshiba Corp Nonvolatile semiconductor memory
DE3141390A1 (de) * 1981-10-19 1983-04-28 Deutsche Itt Industries Gmbh, 7800 Freiburg Floating-gate-speicherzelle, bei der das schreiben und loeschen durch injektion heisser ladungstraeger erfolgt
JPS6288368A (ja) * 1985-10-15 1987-04-22 Seiko Instr & Electronics Ltd 半導体不揮発性メモリ
JPS6289364A (ja) * 1985-10-16 1987-04-23 Seiko Instr & Electronics Ltd 不揮発性半導体記憶装置
IT1199828B (it) * 1986-12-22 1989-01-05 Sgs Microelettronica Spa Cella di memoria eeprom a singolo livello di polisilicio scrivibile e cancellabile bit a bit
USRE37308E1 (en) * 1986-12-22 2001-08-07 Stmicroelectronics S.R.L. EEPROM memory cell with a single level of polysilicon programmable and erasable bit by bit
KR930006954A (ko) * 1991-09-25 1993-04-22 리차드 데이비드 로만 개선된 지속 특성을 갖는 전기적 소거가능 프로그램 가능 판독 전용 메모리(eeprom)
EP1550150A4 (en) * 2002-08-13 2009-08-19 Gen Semiconductor Inc DMOS COMPONENT WITH PROGRAMMABLE THRESHOLD VOLTAGE
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2445091A1 (de) * 1974-09-20 1976-04-01 Siemens Ag Speicher-fet mit isoliertem, floatendem speichergate
US4122544A (en) * 1976-12-27 1978-10-24 Texas Instruments Incorporated Electrically alterable floating gate semiconductor memory device with series enhancement transistor
US4184207A (en) * 1978-01-27 1980-01-15 Texas Instruments Incorporated High density floating gate electrically programmable ROM

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62265767A (ja) * 1986-05-14 1987-11-18 Toshiba Corp 不揮発性半導体装置の製造方法
JPH0478189B2 (ja) * 1986-05-14 1992-12-10 Tokyo Shibaura Electric Co
JPS6489370A (en) * 1987-09-29 1989-04-03 Matsushita Electronics Corp Semiconductor storage device
JPH01293568A (ja) * 1988-05-23 1989-11-27 Oki Electric Ind Co Ltd 不揮発性半導体記憶装置
JPH0575134A (ja) * 1991-08-16 1993-03-26 Rohm Co Ltd 半導体記憶装置
WO1993024957A1 (en) * 1992-05-27 1993-12-09 Nippon Telegraph And Telephone Corporation Semiconductor device
WO2010029618A1 (ja) * 2008-09-10 2010-03-18 株式会社アドバンテスト メモリデバイス、メモリデバイスの製造方法、およびデータ書込方法
JPWO2010029618A1 (ja) * 2008-09-10 2012-02-02 株式会社アドバンテスト メモリデバイス、メモリデバイスの製造方法、およびデータ書込方法
US8369126B2 (en) 2008-09-10 2013-02-05 Advantest Corporation Memory device, manufacturing method for memory device and method for data writing
WO2010067407A1 (ja) * 2008-12-08 2010-06-17 ハングリー・シー・アセッツ・エル・エル・ピー 半導体記憶デバイスおよびその製造方法
JP4515538B1 (ja) * 2008-12-08 2010-08-04 エンパイア テクノロジー ディベロップメント エルエルシー 半導体記憶デバイスおよびその製造方法
US7907451B2 (en) 2008-12-08 2011-03-15 Empire Technology Development Llc Semiconductor storage device and method of manufacturing same

Also Published As

Publication number Publication date
EP0035160B1 (de) 1983-06-29
SG38084G (en) 1985-09-13
DE3007892A1 (de) 1981-09-10
HK45485A (en) 1985-06-21
IE50819B1 (en) 1986-07-23
IE810421L (en) 1981-09-01
DE3160505D1 (en) 1983-08-04
EP0035160A1 (de) 1981-09-09
DE3007892C2 (de) 1982-06-09

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