IE810421L - Floating-gate storage cell - Google Patents

Floating-gate storage cell

Info

Publication number
IE810421L
IE810421L IE810421A IE42181A IE810421L IE 810421 L IE810421 L IE 810421L IE 810421 A IE810421 A IE 810421A IE 42181 A IE42181 A IE 42181A IE 810421 L IE810421 L IE 810421L
Authority
IE
Ireland
Prior art keywords
electrode
gate electrode
gate
floating
towards
Prior art date
Application number
IE810421A
Other versions
IE50819B1 (en
Original Assignee
Itt
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Itt filed Critical Itt
Publication of IE810421L publication Critical patent/IE810421L/en
Publication of IE50819B1 publication Critical patent/IE50819B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)

Abstract

1. Floating-gate storage cell consisting of an n-channel field-effect transistor whose potentially floating gate electrode comprises a first electrode part which, for effecting the tunnel injections of electrons into the gate electrode (1), is coupled capacitively to a writing electrode (4), as well as a second electrode part of polycrystalline silicon which, for effecting the tunnel emissions of electrons from said gate electrode (1) during the erasing operation, is coupled capacitively to an erasing electrode (3), characterized in that moreover said gate electrode (1) is coupled capacitively to a programming electrode (2), that said writing electrode (4) is connected directly in a barrier-free contact to the drain zone (5) of the field-effect transistor, and that the coupling capacitance of said programming electrode (2) towards said gate electrode (1) is greater than that of said writing electrode (4) towards said gate electrode (1) and greater than that of said erasing electode (3) towards said gate electrode (1). [EP0035160A1]
IE421/81A 1980-03-01 1981-02-27 Semiconductor storage cell IE50819B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE3007892A DE3007892C2 (en) 1980-03-01 1980-03-01 Floating gate memory cell

Publications (2)

Publication Number Publication Date
IE810421L true IE810421L (en) 1981-09-01
IE50819B1 IE50819B1 (en) 1986-07-23

Family

ID=6095997

Family Applications (1)

Application Number Title Priority Date Filing Date
IE421/81A IE50819B1 (en) 1980-03-01 1981-02-27 Semiconductor storage cell

Country Status (6)

Country Link
EP (1) EP0035160B1 (en)
JP (1) JPS56134776A (en)
DE (2) DE3007892C2 (en)
HK (1) HK45485A (en)
IE (1) IE50819B1 (en)
SG (1) SG38084G (en)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57141969A (en) * 1981-02-27 1982-09-02 Toshiba Corp Nonvolatile semiconductor memory
DE3141390A1 (en) * 1981-10-19 1983-04-28 Deutsche Itt Industries Gmbh, 7800 Freiburg FLOATING GATE STORAGE CELL WHICH IS WRITTEN AND DELETED BY INJECTION OF HOT CARRIER
JPS6288368A (en) * 1985-10-15 1987-04-22 Seiko Instr & Electronics Ltd Semiconductor nonvolatile memory
JPS6289364A (en) * 1985-10-16 1987-04-23 Seiko Instr & Electronics Ltd Non-volatile semiconductor storage device
JPS62265767A (en) * 1986-05-14 1987-11-18 Toshiba Corp Nonvolatile semiconductor device and manufacture thereof
USRE37308E1 (en) * 1986-12-22 2001-08-07 Stmicroelectronics S.R.L. EEPROM memory cell with a single level of polysilicon programmable and erasable bit by bit
IT1199828B (en) * 1986-12-22 1989-01-05 Sgs Microelettronica Spa SINGLE LEVEL EEPROM MEMORY CELL WRITABLE AND CANCELLABLE POLYSILIC BIT A BIT
JPS6489370A (en) * 1987-09-29 1989-04-03 Matsushita Electronics Corp Semiconductor storage device
JP2511495B2 (en) * 1988-05-23 1996-06-26 沖電気工業株式会社 Nonvolatile semiconductor memory device
JPH0575134A (en) * 1991-08-16 1993-03-26 Rohm Co Ltd Semiconductor memory
KR930006954A (en) * 1991-09-25 1993-04-22 리차드 데이비드 로만 Electrically Erasable Programmable Read-Only Memory (EEPROM) with Improved Persistence
JP3269659B2 (en) * 1992-05-27 2002-03-25 直 柴田 Semiconductor device
AU2003269956A1 (en) * 2002-08-13 2004-02-25 General Semiconductor, Inc. A dmos device with a programmable threshold voltage
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
KR101195959B1 (en) 2008-09-10 2012-11-05 가부시키가이샤 어드밴티스트 Memory device, method for manufacturing memory device, and method for writing data
US7907451B2 (en) 2008-12-08 2011-03-15 Empire Technology Development Llc Semiconductor storage device and method of manufacturing same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2445091A1 (en) * 1974-09-20 1976-04-01 Siemens Ag Storage FET with insulated storage gate - has insulated control gate and is fitted with high internal capacitance between gates
US4122544A (en) * 1976-12-27 1978-10-24 Texas Instruments Incorporated Electrically alterable floating gate semiconductor memory device with series enhancement transistor
US4184207A (en) * 1978-01-27 1980-01-15 Texas Instruments Incorporated High density floating gate electrically programmable ROM

Also Published As

Publication number Publication date
EP0035160B1 (en) 1983-06-29
DE3007892A1 (en) 1981-09-10
IE50819B1 (en) 1986-07-23
EP0035160A1 (en) 1981-09-09
HK45485A (en) 1985-06-21
DE3160505D1 (en) 1983-08-04
SG38084G (en) 1985-09-13
JPS56134776A (en) 1981-10-21
DE3007892C2 (en) 1982-06-09

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