SG36290G - A semiconductor memory device - Google Patents

A semiconductor memory device

Info

Publication number
SG36290G
SG36290G SG362/90A SG36290A SG36290G SG 36290 G SG36290 G SG 36290G SG 362/90 A SG362/90 A SG 362/90A SG 36290 A SG36290 A SG 36290A SG 36290 G SG36290 G SG 36290G
Authority
SG
Singapore
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Application number
SG362/90A
Other languages
English (en)
Original Assignee
Hitachi Ltd
Hitachi Device Eng
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Device Eng filed Critical Hitachi Ltd
Publication of SG36290G publication Critical patent/SG36290G/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/922—Active solid-state devices, e.g. transistors, solid-state diodes with means to prevent inspection of or tampering with an integrated circuit, e.g. "smart card", anti-tamper
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/925—Bridge rectifier module
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/926—Dummy metallization

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
SG362/90A 1984-02-24 1990-05-24 A semiconductor memory device SG36290G (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59032444A JPH0658947B2 (ja) 1984-02-24 1984-02-24 半導体メモリ装置の製法

Publications (1)

Publication Number Publication Date
SG36290G true SG36290G (en) 1990-12-21

Family

ID=12359130

Family Applications (1)

Application Number Title Priority Date Filing Date
SG362/90A SG36290G (en) 1984-02-24 1990-05-24 A semiconductor memory device

Country Status (6)

Country Link
US (4) US4731642A (ko)
JP (1) JPH0658947B2 (ko)
KR (1) KR920010191B1 (ko)
GB (1) GB2156581B (ko)
HK (1) HK42290A (ko)
SG (1) SG36290G (ko)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62114224A (ja) * 1985-11-13 1987-05-26 Nec Corp 半導体装置
JPH01194436A (ja) * 1988-01-29 1989-08-04 Nec Yamaguchi Ltd 半導体装置
JPH0828467B2 (ja) * 1988-11-15 1996-03-21 株式会社東芝 半導体装置
JP2507618B2 (ja) * 1989-07-21 1996-06-12 株式会社東芝 半導体集積回路装置の製造方法
FR2663774B1 (fr) * 1990-06-21 1992-09-25 Sgs Thomson Microelectronics Circuit de test de cellules memoires electriquement programmables.
JP3083547B2 (ja) 1990-07-12 2000-09-04 株式会社日立製作所 半導体集積回路装置
EP0471535B1 (en) * 1990-08-13 1998-01-28 Nec Corporation Semiconductor memory device
JP2528737B2 (ja) * 1990-11-01 1996-08-28 三菱電機株式会社 半導体記憶装置およびその製造方法
KR960001611B1 (ko) 1991-03-06 1996-02-02 가부시끼가이샤 한도다이 에네르기 겐뀨쇼 절연 게이트형 전계 효과 반도체 장치 및 그 제작방법
US6979840B1 (en) * 1991-09-25 2005-12-27 Semiconductor Energy Laboratory Co., Ltd. Thin film transistors having anodized metal film between the gate wiring and drain wiring
US5149668A (en) * 1991-11-19 1992-09-22 Micron Technology, Inc. Method of preventing storage node to storage node shorts in fabrication of memory integrated circuitry having stacked capacitors and stacked capacitor memory integrated circuits
US6624450B1 (en) 1992-03-27 2003-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US5306951A (en) * 1992-05-14 1994-04-26 Micron Technology, Inc. Sidewall silicidation for improved reliability and conductivity
KR0121992B1 (ko) * 1993-03-03 1997-11-12 모리시다 요이치 반도체장치 및 그 제조방법
JPH06283612A (ja) * 1993-03-26 1994-10-07 Mitsubishi Electric Corp 半導体装置および半導体装置の製造方法
JPH06291181A (ja) * 1993-03-30 1994-10-18 Nippon Steel Corp 半導体装置の製造方法
US6388314B1 (en) 1995-08-17 2002-05-14 Micron Technology, Inc. Single deposition layer metal dynamic random access memory
JP3434397B2 (ja) * 1995-09-06 2003-08-04 三菱電機株式会社 半導体記憶装置
KR0172426B1 (ko) * 1995-12-21 1999-03-30 김광호 반도체 메모리장치
US5723375A (en) * 1996-04-26 1998-03-03 Micron Technology, Inc. Method of making EEPROM transistor for a DRAM
US5903491A (en) 1997-06-09 1999-05-11 Micron Technology, Inc. Single deposition layer metal dynamic random access memory
JP3575988B2 (ja) * 1998-05-28 2004-10-13 沖電気工業株式会社 半導体記憶装置
KR100289813B1 (ko) * 1998-07-03 2001-10-26 윤종용 노아형플렛-셀마스크롬장치
JP4356804B2 (ja) * 1998-08-06 2009-11-04 富士通マイクロエレクトロニクス株式会社 半導体装置
US6258715B1 (en) 1999-01-11 2001-07-10 Taiwan Semiconductor Manufacturing Company Process for low-k dielectric with dummy plugs
DE19907921C1 (de) * 1999-02-24 2000-09-28 Siemens Ag Halbleiterspeicheranordnung mit Dummy-Bauelementen auf durchgehenden Diffusionsgebieten
JP3408466B2 (ja) * 1999-08-23 2003-05-19 エヌイーシーマイクロシステム株式会社 半導体記憶装置
US7087943B2 (en) * 2003-05-08 2006-08-08 Intel Corporation Direct alignment scheme between multiple lithography layers
US11217590B2 (en) * 2020-04-06 2022-01-04 Micron Technology, Inc. Semiconductor memory device and method of forming the same

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5310936A (en) * 1976-07-19 1978-01-31 Hitachi Ltd Memory and its applying method
JPS6041463B2 (ja) * 1976-11-19 1985-09-17 株式会社日立製作所 ダイナミツク記憶装置
US4392210A (en) * 1978-08-28 1983-07-05 Mostek Corporation One transistor-one capacitor memory cell
AU518569B2 (en) * 1979-08-07 1981-10-08 Farmos-Yhtyma Oy 4-benzyl- and 4-benzoyl imidazole derivatives
JPS5632463U (ko) * 1979-08-20 1981-03-30
JPS5713180A (en) * 1980-06-25 1982-01-23 Fujitsu Ltd Etching method
JPS57194567A (en) * 1981-05-27 1982-11-30 Hitachi Ltd Semiconductor memory device
JPS5843520A (ja) * 1981-09-09 1983-03-14 Nec Corp 半導体装置
US4449207A (en) * 1982-04-29 1984-05-15 Intel Corporation Byte-wide dynamic RAM with multiplexed internal buses
FR2528613B1 (fr) * 1982-06-09 1991-09-20 Hitachi Ltd Memoire a semi-conducteurs
US4685089A (en) * 1984-08-29 1987-08-04 Texas Instruments Incorporated High speed, low-power nibble mode circuitry for dynamic memory
US4713678A (en) * 1984-12-07 1987-12-15 Texas Instruments Incorporated dRAM cell and method
JPS61193454A (ja) * 1985-02-20 1986-08-27 Mitsubishi Electric Corp 半導体装置

Also Published As

Publication number Publication date
US4731642A (en) 1988-03-15
US5416347A (en) 1995-05-16
GB2156581A (en) 1985-10-09
US5580810A (en) 1996-12-03
KR850006983A (ko) 1985-10-25
HK42290A (en) 1990-06-08
GB2156581B (en) 1988-06-08
US4830977A (en) 1989-05-16
JPH0658947B2 (ja) 1994-08-03
GB8501787D0 (en) 1985-02-27
JPS60177669A (ja) 1985-09-11
KR920010191B1 (ko) 1992-11-19

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