HK42290A - A semiconductor memory device - Google Patents
A semiconductor memory deviceInfo
- Publication number
- HK42290A HK42290A HK422/90A HK42290A HK42290A HK 42290 A HK42290 A HK 42290A HK 422/90 A HK422/90 A HK 422/90A HK 42290 A HK42290 A HK 42290A HK 42290 A HK42290 A HK 42290A
- Authority
- HK
- Hong Kong
- Prior art keywords
- memory device
- semiconductor memory
- semiconductor
- memory
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
- G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/922—Active solid-state devices, e.g. transistors, solid-state diodes with means to prevent inspection of or tampering with an integrated circuit, e.g. "smart card", anti-tamper
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/925—Bridge rectifier module
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/926—Dummy metallization
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Memories (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59032444A JPH0658947B2 (ja) | 1984-02-24 | 1984-02-24 | 半導体メモリ装置の製法 |
Publications (1)
Publication Number | Publication Date |
---|---|
HK42290A true HK42290A (en) | 1990-06-08 |
Family
ID=12359130
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK422/90A HK42290A (en) | 1984-02-24 | 1990-05-31 | A semiconductor memory device |
Country Status (6)
Country | Link |
---|---|
US (4) | US4731642A (ko) |
JP (1) | JPH0658947B2 (ko) |
KR (1) | KR920010191B1 (ko) |
GB (1) | GB2156581B (ko) |
HK (1) | HK42290A (ko) |
SG (1) | SG36290G (ko) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62114224A (ja) * | 1985-11-13 | 1987-05-26 | Nec Corp | 半導体装置 |
JPH01194436A (ja) * | 1988-01-29 | 1989-08-04 | Nec Yamaguchi Ltd | 半導体装置 |
JPH0828467B2 (ja) * | 1988-11-15 | 1996-03-21 | 株式会社東芝 | 半導体装置 |
JP2507618B2 (ja) * | 1989-07-21 | 1996-06-12 | 株式会社東芝 | 半導体集積回路装置の製造方法 |
FR2663774B1 (fr) * | 1990-06-21 | 1992-09-25 | Sgs Thomson Microelectronics | Circuit de test de cellules memoires electriquement programmables. |
JP3083547B2 (ja) * | 1990-07-12 | 2000-09-04 | 株式会社日立製作所 | 半導体集積回路装置 |
DE69128819T2 (de) * | 1990-08-13 | 1998-05-14 | Nippon Electric Co | Halbleiterspeicheranordnung |
JP2528737B2 (ja) * | 1990-11-01 | 1996-08-28 | 三菱電機株式会社 | 半導体記憶装置およびその製造方法 |
KR960001611B1 (ko) | 1991-03-06 | 1996-02-02 | 가부시끼가이샤 한도다이 에네르기 겐뀨쇼 | 절연 게이트형 전계 효과 반도체 장치 및 그 제작방법 |
US6979840B1 (en) * | 1991-09-25 | 2005-12-27 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistors having anodized metal film between the gate wiring and drain wiring |
US5149668A (en) * | 1991-11-19 | 1992-09-22 | Micron Technology, Inc. | Method of preventing storage node to storage node shorts in fabrication of memory integrated circuitry having stacked capacitors and stacked capacitor memory integrated circuits |
US6624450B1 (en) | 1992-03-27 | 2003-09-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
US5306951A (en) * | 1992-05-14 | 1994-04-26 | Micron Technology, Inc. | Sidewall silicidation for improved reliability and conductivity |
KR0121992B1 (ko) * | 1993-03-03 | 1997-11-12 | 모리시다 요이치 | 반도체장치 및 그 제조방법 |
JPH06283612A (ja) * | 1993-03-26 | 1994-10-07 | Mitsubishi Electric Corp | 半導体装置および半導体装置の製造方法 |
JPH06291181A (ja) * | 1993-03-30 | 1994-10-18 | Nippon Steel Corp | 半導体装置の製造方法 |
US6388314B1 (en) | 1995-08-17 | 2002-05-14 | Micron Technology, Inc. | Single deposition layer metal dynamic random access memory |
JP3434397B2 (ja) * | 1995-09-06 | 2003-08-04 | 三菱電機株式会社 | 半導体記憶装置 |
KR0172426B1 (ko) * | 1995-12-21 | 1999-03-30 | 김광호 | 반도체 메모리장치 |
US5723375A (en) | 1996-04-26 | 1998-03-03 | Micron Technology, Inc. | Method of making EEPROM transistor for a DRAM |
US5903491A (en) | 1997-06-09 | 1999-05-11 | Micron Technology, Inc. | Single deposition layer metal dynamic random access memory |
JP3575988B2 (ja) * | 1998-05-28 | 2004-10-13 | 沖電気工業株式会社 | 半導体記憶装置 |
KR100289813B1 (ko) * | 1998-07-03 | 2001-10-26 | 윤종용 | 노아형플렛-셀마스크롬장치 |
JP4356804B2 (ja) * | 1998-08-06 | 2009-11-04 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置 |
US6258715B1 (en) | 1999-01-11 | 2001-07-10 | Taiwan Semiconductor Manufacturing Company | Process for low-k dielectric with dummy plugs |
DE19907921C1 (de) * | 1999-02-24 | 2000-09-28 | Siemens Ag | Halbleiterspeicheranordnung mit Dummy-Bauelementen auf durchgehenden Diffusionsgebieten |
JP3408466B2 (ja) * | 1999-08-23 | 2003-05-19 | エヌイーシーマイクロシステム株式会社 | 半導体記憶装置 |
US7087943B2 (en) * | 2003-05-08 | 2006-08-08 | Intel Corporation | Direct alignment scheme between multiple lithography layers |
US11217590B2 (en) * | 2020-04-06 | 2022-01-04 | Micron Technology, Inc. | Semiconductor memory device and method of forming the same |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5310936A (en) * | 1976-07-19 | 1978-01-31 | Hitachi Ltd | Memory and its applying method |
JPS6041463B2 (ja) * | 1976-11-19 | 1985-09-17 | 株式会社日立製作所 | ダイナミツク記憶装置 |
US4392210A (en) * | 1978-08-28 | 1983-07-05 | Mostek Corporation | One transistor-one capacitor memory cell |
AU518569B2 (en) * | 1979-08-07 | 1981-10-08 | Farmos-Yhtyma Oy | 4-benzyl- and 4-benzoyl imidazole derivatives |
JPS5632463U (ko) * | 1979-08-20 | 1981-03-30 | ||
JPS5713180A (en) * | 1980-06-25 | 1982-01-23 | Fujitsu Ltd | Etching method |
JPS57194567A (en) * | 1981-05-27 | 1982-11-30 | Hitachi Ltd | Semiconductor memory device |
JPS5843520A (ja) * | 1981-09-09 | 1983-03-14 | Nec Corp | 半導体装置 |
US4449207A (en) * | 1982-04-29 | 1984-05-15 | Intel Corporation | Byte-wide dynamic RAM with multiplexed internal buses |
FR2528613B1 (fr) * | 1982-06-09 | 1991-09-20 | Hitachi Ltd | Memoire a semi-conducteurs |
US4685089A (en) * | 1984-08-29 | 1987-08-04 | Texas Instruments Incorporated | High speed, low-power nibble mode circuitry for dynamic memory |
US4713678A (en) * | 1984-12-07 | 1987-12-15 | Texas Instruments Incorporated | dRAM cell and method |
JPS61193454A (ja) * | 1985-02-20 | 1986-08-27 | Mitsubishi Electric Corp | 半導体装置 |
-
1984
- 1984-02-24 JP JP59032444A patent/JPH0658947B2/ja not_active Expired - Lifetime
-
1985
- 1985-01-24 GB GB08501787A patent/GB2156581B/en not_active Expired
- 1985-02-15 KR KR1019850000951A patent/KR920010191B1/ko not_active IP Right Cessation
- 1985-02-22 US US06/704,572 patent/US4731642A/en not_active Expired - Lifetime
-
1988
- 1988-01-27 US US07/148,956 patent/US4830977A/en not_active Expired - Lifetime
-
1990
- 1990-05-24 SG SG362/90A patent/SG36290G/en unknown
- 1990-05-31 HK HK422/90A patent/HK42290A/xx not_active IP Right Cessation
-
1992
- 1992-10-13 US US07/959,534 patent/US5416347A/en not_active Expired - Lifetime
-
1995
- 1995-04-04 US US08/416,099 patent/US5580810A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US5580810A (en) | 1996-12-03 |
JPH0658947B2 (ja) | 1994-08-03 |
KR850006983A (ko) | 1985-10-25 |
GB2156581A (en) | 1985-10-09 |
SG36290G (en) | 1990-12-21 |
JPS60177669A (ja) | 1985-09-11 |
US4830977A (en) | 1989-05-16 |
GB2156581B (en) | 1988-06-08 |
US5416347A (en) | 1995-05-16 |
US4731642A (en) | 1988-03-15 |
GB8501787D0 (en) | 1985-02-27 |
KR920010191B1 (ko) | 1992-11-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |