SG191504A1 - Cleaning liquid composition for electronic device - Google Patents

Cleaning liquid composition for electronic device Download PDF

Info

Publication number
SG191504A1
SG191504A1 SG2012089926A SG2012089926A SG191504A1 SG 191504 A1 SG191504 A1 SG 191504A1 SG 2012089926 A SG2012089926 A SG 2012089926A SG 2012089926 A SG2012089926 A SG 2012089926A SG 191504 A1 SG191504 A1 SG 191504A1
Authority
SG
Singapore
Prior art keywords
cleaning liquid
liquid composition
acid
cleaning
composition according
Prior art date
Application number
SG2012089926A
Other languages
English (en)
Inventor
Taniguchi Yumiko
Morita Kikue
Horike Chiyoko
Ohwada Takuo
Original Assignee
Kanto Kagaku
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kanto Kagaku filed Critical Kanto Kagaku
Publication of SG191504A1 publication Critical patent/SG191504A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/38—Cationic compounds
    • C11D1/62—Quaternary ammonium compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/66—Non-ionic compounds
    • C11D1/79—Phosphine oxides
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/30—Amines; Substituted amines ; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/36—Organic compounds containing phosphorus
    • C11D3/361—Phosphonates, phosphinates or phosphonites
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/36—Organic compounds containing phosphorus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
    • C23G1/16—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions using inhibitors
    • C23G1/18—Organic inhibitors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
    • C23G1/20—Other heavy metals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
SG2012089926A 2011-12-06 2012-12-06 Cleaning liquid composition for electronic device SG191504A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011267368A JP6066552B2 (ja) 2011-12-06 2011-12-06 電子デバイス用洗浄液組成物

Publications (1)

Publication Number Publication Date
SG191504A1 true SG191504A1 (en) 2013-07-31

Family

ID=47323949

Family Applications (1)

Application Number Title Priority Date Filing Date
SG2012089926A SG191504A1 (en) 2011-12-06 2012-12-06 Cleaning liquid composition for electronic device

Country Status (8)

Country Link
US (1) US9334470B2 (https=)
EP (1) EP2602309B1 (https=)
JP (1) JP6066552B2 (https=)
KR (1) KR102041624B1 (https=)
CN (1) CN103146509A (https=)
MY (1) MY165726A (https=)
SG (1) SG191504A1 (https=)
TW (1) TWI565797B (https=)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7632796B2 (en) 2005-10-28 2009-12-15 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use
US9329486B2 (en) 2005-10-28 2016-05-03 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use
US8263539B2 (en) 2005-10-28 2012-09-11 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and methods for its use
TWI450052B (zh) * 2008-06-24 2014-08-21 黛納羅伊有限責任公司 用於後段製程操作有效之剝離溶液
SG11201404930SA (en) 2012-02-15 2014-09-26 Advanced Tech Materials Post-cmp removal using compositions and method of use
TWI572711B (zh) * 2012-10-16 2017-03-01 盟智科技股份有限公司 半導體製程用的清洗組成物及清洗方法
US9158202B2 (en) 2012-11-21 2015-10-13 Dynaloy, Llc Process and composition for removing substances from substrates
JP6203525B2 (ja) * 2013-04-19 2017-09-27 関東化學株式会社 洗浄液組成物
CN103757648B (zh) * 2014-01-16 2016-03-30 段云豪 一种手机表面铜锈的去除及防护剂
US11127587B2 (en) 2014-02-05 2021-09-21 Entegris, Inc. Non-amine post-CMP compositions and method of use
TWI636131B (zh) * 2014-05-20 2018-09-21 日商Ｊｓｒ股份有限公司 清洗用組成物及清洗方法
CN104018170A (zh) * 2014-05-29 2014-09-03 东风汽车紧固件有限公司 一种低温环保无铬除磷化膜剂
JP6350080B2 (ja) * 2014-07-31 2018-07-04 Jsr株式会社 半導体基板洗浄用組成物
CN104818133B (zh) * 2015-03-30 2018-04-27 蓝思科技（长沙）有限公司 一种用于菲林褪镀后脱垢的清洗剂
JP6737436B2 (ja) 2015-11-10 2020-08-12 株式会社Ｓｃｒｅｅｎホールディングス 膜処理ユニットおよび基板処理装置
US10319605B2 (en) 2016-05-10 2019-06-11 Jsr Corporation Semiconductor treatment composition and treatment method
KR20190094426A (ko) * 2017-01-18 2019-08-13 엔테그리스, 아이엔씨. 표면으로부터 세리아 입자를 제거하기 위한 조성물 및 방법
MY199974A (en) * 2017-03-31 2023-12-01 Kanto Kagaku Etchant composition for etching titanium layer or titanium-containing layer, and etching method
WO2021126340A1 (en) * 2019-12-20 2021-06-24 Versum Materials Us, Llc Co/cu selective wet etchant
EP4225880A4 (en) * 2020-10-09 2024-07-03 Henkel AG & Co. KGaA CLEANING AGENT FOR ELECTRONIC DEVICE COMPONENTS

Family Cites Families (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0641773A (ja) 1992-05-18 1994-02-15 Toshiba Corp 半導体ウェーハ処理液
US5421897A (en) * 1992-07-17 1995-06-06 Grawe; John Abatement process for contaminants
JP3335500B2 (ja) * 1994-08-03 2002-10-15 シャープ株式会社 排水処理装置および排水処理方法
JPH09286999A (ja) * 1996-04-19 1997-11-04 Kanto Chem Co Inc シリコンウェハ洗浄用組成物
JP3219020B2 (ja) 1996-06-05 2001-10-15 和光純薬工業株式会社 洗浄処理剤
TW416987B (en) 1996-06-05 2001-01-01 Wako Pure Chem Ind Ltd A composition for cleaning the semiconductor substrate surface
TW387936B (en) 1997-08-12 2000-04-21 Kanto Kagaku Washing solution
JP3165801B2 (ja) 1997-08-12 2001-05-14 関東化学株式会社 洗浄液
JP3377938B2 (ja) 1997-10-21 2003-02-17 花王株式会社 洗浄剤組成物及び洗浄方法
JP4252130B2 (ja) 1998-07-13 2009-04-08 武藤工業株式会社 インクジェットプリンタにおける細線の階調表現方法
JP2000252250A (ja) * 1999-02-26 2000-09-14 Mitsubishi Gas Chem Co Inc 半導体基板洗浄液およびそれを用いた半導体基板の洗浄方法
JP4516176B2 (ja) 1999-04-20 2010-08-04 関東化学株式会社 電子材料用基板洗浄液
US6395693B1 (en) * 1999-09-27 2002-05-28 Cabot Microelectronics Corporation Cleaning solution for semiconductor surfaces following chemical-mechanical polishing
KR100758186B1 (ko) * 2000-03-21 2007-09-13 와코 쥰야꾸 고교 가부시키가이샤 반도체 기판 세정제 및 세정 방법
KR20030007969A (ko) * 2000-06-16 2003-01-23 카오카부시키가이샤 세정제 조성물
JP2002069495A (ja) * 2000-06-16 2002-03-08 Kao Corp 洗浄剤組成物
US6599370B2 (en) * 2000-10-16 2003-07-29 Mallinckrodt Inc. Stabilized alkaline compositions for cleaning microelectronic substrates
JP2002257809A (ja) * 2001-03-06 2002-09-11 Nec Corp テトラメチルアンモニウムハイドロオキサイドの検出方法および装置
MY131912A (en) * 2001-07-09 2007-09-28 Avantor Performance Mat Inc Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility
TWI297102B (en) * 2001-08-03 2008-05-21 Nec Electronics Corp Removing composition
JP2003129089A (ja) * 2001-10-24 2003-05-08 Daikin Ind Ltd 洗浄用組成物
TWI276682B (en) * 2001-11-16 2007-03-21 Mitsubishi Chem Corp Substrate surface cleaning liquid mediums and cleaning method
EP1520211A2 (en) * 2002-06-07 2005-04-06 Mallinckrodt Baker, Inc. Microelectronic cleaning compositions containing oxidizers and organic solvents
JP2004042811A (ja) 2002-07-12 2004-02-12 Denso Corp 車両用空調装置
JP2005101479A (ja) * 2002-11-08 2005-04-14 Sumitomo Chemical Co Ltd 半導体基板用洗浄液
EP1562225A4 (en) * 2002-11-08 2007-04-18 Wako Pure Chem Ind Ltd CLEANING COMPOSITION AND METHOD FOR CLEANING THEREWITH
TWI324362B (en) * 2003-01-10 2010-05-01 Kanto Kagaku Cleaning solution for semiconductor substrate
JP4485786B2 (ja) * 2003-01-10 2010-06-23 関東化学株式会社 半導体基板用洗浄液
WO2004094581A1 (en) * 2003-04-18 2004-11-04 Ekc Technology, Inc. Aqueous fluoride compositions for cleaning semiconductor devices
JP2005060660A (ja) * 2003-07-31 2005-03-10 Sumitomo Chemical Co Ltd 半導体基板用洗浄液
US20050205835A1 (en) * 2004-03-19 2005-09-22 Tamboli Dnyanesh C Alkaline post-chemical mechanical planarization cleaning compositions
JP4628209B2 (ja) * 2004-11-18 2011-02-09 花王株式会社 剥離剤組成物
TWI282363B (en) * 2005-05-19 2007-06-11 Epoch Material Co Ltd Aqueous cleaning composition for semiconductor copper processing
JP2008543060A (ja) 2005-05-26 2008-11-27 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 銅不活性化化学機械研磨後洗浄組成物及び使用方法
JP5192952B2 (ja) 2007-09-14 2013-05-08 三洋化成工業株式会社 磁気ディスク基板用洗浄剤
JP5192953B2 (ja) 2007-09-14 2013-05-08 三洋化成工業株式会社 磁気ディスク用ガラス基板洗浄剤
JP2009194049A (ja) * 2008-02-13 2009-08-27 Sanyo Chem Ind Ltd 銅配線半導体用洗浄剤
JP5553985B2 (ja) * 2008-12-11 2014-07-23 三洋化成工業株式会社 電子材料用洗浄剤
JP5410943B2 (ja) 2008-12-18 2014-02-05 三洋化成工業株式会社 電子材料用洗浄剤
US8765653B2 (en) 2009-07-07 2014-07-01 Air Products And Chemicals, Inc. Formulations and method for post-CMP cleaning
US8148311B2 (en) * 2009-10-24 2012-04-03 Wai Mun Lee Composition and method for cleaning semiconductor substrates comprising an alkyl diphosphonic acid
US8148310B2 (en) * 2009-10-24 2012-04-03 Wai Mun Lee Composition and method for cleaning semiconductor substrates comprising an alkyl diphosphonic acid
JP5401359B2 (ja) * 2010-02-16 2014-01-29 花王株式会社 硬質表面用アルカリ洗浄剤組成物

Also Published As

Publication number Publication date
TW201336985A (zh) 2013-09-16
JP6066552B2 (ja) 2017-01-25
TWI565797B (zh) 2017-01-11
EP2602309B1 (en) 2017-05-03
EP2602309A1 (en) 2013-06-12
JP2013119579A (ja) 2013-06-17
US20130143785A1 (en) 2013-06-06
MY165726A (en) 2018-04-20
US9334470B2 (en) 2016-05-10
KR20130063474A (ko) 2013-06-14
CN103146509A (zh) 2013-06-12
KR102041624B1 (ko) 2019-11-06

Similar Documents

Publication Publication Date Title
US9334470B2 (en) Cleaning liquid composition for electronic device
KR102913590B1 (ko) 처리액, 기판의 처리 방법
TWI737798B (zh) 處理液、基板的清洗方法、半導體裝置的製造方法
JP4752270B2 (ja) 洗浄液及びそれを用いた洗浄方法
US20080076688A1 (en) Copper passivating post-chemical mechanical polishing cleaning composition and method of use
US20040134873A1 (en) Abrasive-free chemical mechanical polishing composition and polishing process containing same
WO2002094462A1 (fr) Procede de nettoyage de la surface d'un substrat
US20160122696A1 (en) Compositions and methods for removing ceria particles from a surface
CN1670147A (zh) 碱性后化学机械平面化清洗组合物
JP2003289060A (ja) 半導体デバイス用基板の洗浄液および洗浄方法
KR20040077805A (ko) 반도체 디바이스용 기판의 세정액 및 세정방법
KR20130129369A (ko) 티타늄 니트라이드 부식을 억제하기 위한 조성물 및 방법
WO2008036823A2 (en) Uric acid additive for cleaning formulations
KR20200058428A (ko) 세정액, 세정 방법 및 반도체 웨이퍼의 제조 방법
JP4498726B2 (ja) 洗浄剤
TW201807185A (zh) 半導體處理用組成物及處理方法
KR102245577B1 (ko) Cmp-후 세정액 조성물
JP2014036136A (ja) 半導体デバイス用基板洗浄液及び半導体デバイス用基板の洗浄方法
KR102230865B1 (ko) 구리 함유 기판용 세정액
JP5817310B2 (ja) 半導体デバイス用基板の洗浄液及び洗浄方法
TWI397953B (zh) 半導體元件或顯示元件用洗淨液及洗淨方法
JP2014154625A (ja) 半導体デバイス用基板の洗浄液及び洗浄方法
JP2003316028A (ja) レジスト残渣除去剤および洗浄剤
KR101323040B1 (ko) 세정액 조성물 및 이를 이용한 세정방법
JP7544027B2 (ja) セリウム化合物除去用洗浄液、洗浄方法及び半導体ウェハの製造方法