SG153664A1 - Radiation source, lithographic apparatus, and device manufacturing method - Google Patents

Radiation source, lithographic apparatus, and device manufacturing method

Info

Publication number
SG153664A1
SG153664A1 SG200701617-3A SG2007016173A SG153664A1 SG 153664 A1 SG153664 A1 SG 153664A1 SG 2007016173 A SG2007016173 A SG 2007016173A SG 153664 A1 SG153664 A1 SG 153664A1
Authority
SG
Singapore
Prior art keywords
radiation source
lithographic apparatus
device manufacturing
source comprises
improve
Prior art date
Application number
SG200701617-3A
Other languages
English (en)
Inventor
Lucas Henricus Johannes Stevens
Yurii Victorovitch Sidelkov
Vsevolod Grigorevitech Koloshnikov
Vladimir Mihailovitch Krivtsun
Konstantin Nikolaevitch Koshelev
Vadim Yevgenyevich Banine
Vladimir Vitalaeevitch Ivanov
Erik Rene Kieft
Loopstra Erik Roelef
Robert Rafilevitch Gayazov
Olav Waldemar Vladimir Frijns
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of SG153664A1 publication Critical patent/SG153664A1/en

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—X-ray radiation generated from plasma
    • H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
    • F28D15/00—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies
    • F28D15/02—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes
    • F28D15/0266—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes with separate evaporating and condensing chambers connected by at least one conduit; Loop-type heat pipes; with multiple or common evaporating or condensing chambers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70166—Capillary or channel elements, e.g. nested extreme ultraviolet [EUV] mirrors or shells, optical fibers or light guides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—X-ray radiation generated from plasma
    • H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
    • H05G2/005—X-ray radiation generated from plasma being produced from a liquid or gas containing a metal as principal radiation generating component

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Optics & Photonics (AREA)
  • Environmental & Geological Engineering (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Development (AREA)
  • Thermal Sciences (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • X-Ray Techniques (AREA)
  • Plasma Technology (AREA)
SG200701617-3A 2002-09-19 2003-09-17 Radiation source, lithographic apparatus, and device manufacturing method SG153664A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP02256486 2002-09-19
EP02256907 2002-10-03

Publications (1)

Publication Number Publication Date
SG153664A1 true SG153664A1 (en) 2009-07-29

Family

ID=32395460

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200701617-3A SG153664A1 (en) 2002-09-19 2003-09-17 Radiation source, lithographic apparatus, and device manufacturing method

Country Status (6)

Country Link
US (1) US7528395B2 (zh)
JP (2) JP4381094B2 (zh)
KR (1) KR100598639B1 (zh)
CN (2) CN101795527B (zh)
SG (1) SG153664A1 (zh)
TW (1) TWI266962B (zh)

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US7154109B2 (en) * 2004-09-30 2006-12-26 Intel Corporation Method and apparatus for producing electromagnetic radiation
CN101065999B (zh) * 2004-11-29 2011-04-06 皇家飞利浦电子股份有限公司 用于产生波长范围从大约1nm至大约30nm的辐射并在光刻装置或计量学中使用的方法和设备
DE102005007884A1 (de) * 2005-02-15 2006-08-24 Xtreme Technologies Gmbh Vorrichtung und Verfahren zur Erzeugung von extrem ultravioletter (EUV-) Strahlung
WO2006093687A1 (en) * 2005-02-25 2006-09-08 Cymer, Inc. Method and apparatus for euv light source target material handling
DE102005023060B4 (de) * 2005-05-19 2011-01-27 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Gasentladungs-Strahlungsquelle, insbesondere für EUV-Strahlung
DE102005039849B4 (de) * 2005-08-19 2011-01-27 Xtreme Technologies Gmbh Vorrichtung zur Strahlungserzeugung mittels einer Gasentladung
DE102005044141B4 (de) * 2005-09-15 2008-08-14 Qimonda Ag Belichtungsgerät und Verfahren zum Betrieb eines Belichtungsgeräts
JP4429302B2 (ja) * 2005-09-23 2010-03-10 エーエスエムエル ネザーランズ ビー．ブイ． 電磁放射線源、リソグラフィ装置、デバイス製造方法、および該製造方法によって製造されたデバイス
DE102006003683B3 (de) * 2006-01-24 2007-09-13 Xtreme Technologies Gmbh Anordnung und Verfahren zur Erzeugung von EUV-Strahlung hoher Durchschnittsleistung
KR101396158B1 (ko) * 2006-05-16 2014-05-19 코닌클리케 필립스 엔.브이. Ｅｕｖ 램프 및 연질 ｘ-선 램프의 전환 효율을 증가시키는 방법, 및 ｅｕｖ 방사선 및 연질 ｘ-선을 생성하는 장치
US8766212B2 (en) * 2006-07-19 2014-07-01 Asml Netherlands B.V. Correction of spatial instability of an EUV source by laser beam steering
US7518134B2 (en) * 2006-12-06 2009-04-14 Asml Netherlands B.V. Plasma radiation source for a lithographic apparatus
US7759663B1 (en) * 2006-12-06 2010-07-20 Asml Netherlands B.V. Self-shading electrodes for debris suppression in an EUV source
US7838853B2 (en) * 2006-12-14 2010-11-23 Asml Netherlands B.V. Plasma radiation source, method of forming plasma radiation, apparatus for projecting a pattern from a patterning device onto a substrate and device manufacturing method
US7518135B2 (en) 2006-12-20 2009-04-14 Asml Netherlands B.V. Reducing fast ions in a plasma radiation source
US20080239262A1 (en) * 2007-03-29 2008-10-02 Asml Netherlands B.V. Radiation source for generating electromagnetic radiation and method for generating electromagnetic radiation
JP2008311465A (ja) * 2007-06-15 2008-12-25 Nikon Corp Ｅｕｖ光源、ｅｕｖ露光装置および半導体デバイスの製造方法
US8227771B2 (en) * 2007-07-23 2012-07-24 Asml Netherlands B.V. Debris prevention system and lithographic apparatus
US8493548B2 (en) * 2007-08-06 2013-07-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7763871B2 (en) 2008-04-02 2010-07-27 Asml Netherlands B.V. Radiation source
US8901521B2 (en) 2007-08-23 2014-12-02 Asml Netherlands B.V. Module and method for producing extreme ultraviolet radiation
WO2009025557A1 (en) * 2007-08-23 2009-02-26 Asml Netherlands B.V. Module and method for producing extreme ultraviolet radiation
NL2002890A1 (nl) * 2008-06-16 2009-12-17 Asml Netherlands Bv Lithographic apparatus.
JP5588439B2 (ja) * 2008-07-28 2014-09-10 コーニンクレッカ フィリップス エヌ ヴェ Ｅｕｖ放射又は軟ｘ線を生成する方法及び装置
DE102010055889B4 (de) * 2010-12-21 2014-04-30 Ushio Denki Kabushiki Kaisha Verfahren und Vorrichtung zur Erzeugung kurzwelliger Strahlung mittels einer gasentladungsbasierten Hochfrequenzhochstromentladung
CN105573060B (zh) * 2014-10-16 2017-12-01 中芯国际集成电路制造(上海)有限公司 Euv光源和曝光装置、校准装置和校准方法
CN111585152B (zh) * 2020-04-08 2022-02-08 中国科学院微电子研究所 用于激光器腔室的电极、激光器系统及曝光设备

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Also Published As

Publication number Publication date
CN101795527A (zh) 2010-08-04
JP4580959B2 (ja) 2010-11-17
US20040105082A1 (en) 2004-06-03
TWI266962B (en) 2006-11-21
US7528395B2 (en) 2009-05-05
JP2004165155A (ja) 2004-06-10
CN1497349A (zh) 2004-05-19
CN100594428C (zh) 2010-03-17
KR100598639B1 (ko) 2006-07-07
JP4381094B2 (ja) 2009-12-09
TW200413860A (en) 2004-08-01
CN101795527B (zh) 2013-02-20
JP2007305992A (ja) 2007-11-22
KR20040025632A (ko) 2004-03-24

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