TWI266962B - Radiation source, lithographic apparatus, and device manufacturing method - Google Patents

Radiation source, lithographic apparatus, and device manufacturing method

Info

Publication number
TWI266962B
TWI266962B TW092125623A TW92125623A TWI266962B TW I266962 B TWI266962 B TW I266962B TW 092125623 A TW092125623 A TW 092125623A TW 92125623 A TW92125623 A TW 92125623A TW I266962 B TWI266962 B TW I266962B
Authority
TW
Taiwan
Prior art keywords
radiation source
source comprises
improve
radiation
anode
Prior art date
Application number
TW092125623A
Other languages
English (en)
Other versions
TW200413860A (en
Inventor
Konstantin Nikolaevit Koshelev
Vadim Yevgenyevich Banine
Vladimir Vital Evitch Ivanov
Erik Rene Kieft
Erik Roelof Loopstra
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of TW200413860A publication Critical patent/TW200413860A/zh
Application granted granted Critical
Publication of TWI266962B publication Critical patent/TWI266962B/zh

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
    • F28D15/00—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies
    • F28D15/02—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes
    • F28D15/0266—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes with separate evaporating and condensing chambers connected by at least one conduit; Loop-type heat pipes; with multiple or common evaporating or condensing chambers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70166—Capillary or channel elements, e.g. nested extreme ultraviolet [EUV] mirrors or shells, optical fibers or light guides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
    • H05G2/005—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state containing a metal as principal radiation generating component

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Epidemiology (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Public Health (AREA)
  • Atmospheric Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Optics & Photonics (AREA)
  • Sustainable Development (AREA)
  • General Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • X-Ray Techniques (AREA)
  • Plasma Technology (AREA)
TW092125623A 2002-09-19 2003-09-17 Radiation source, lithographic apparatus, and device manufacturing method TWI266962B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP02256486 2002-09-19
EP02256907 2002-10-03

Publications (2)

Publication Number Publication Date
TW200413860A TW200413860A (en) 2004-08-01
TWI266962B true TWI266962B (en) 2006-11-21

Family

ID=32395460

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092125623A TWI266962B (en) 2002-09-19 2003-09-17 Radiation source, lithographic apparatus, and device manufacturing method

Country Status (6)

Country Link
US (1) US7528395B2 (zh)
JP (2) JP4381094B2 (zh)
KR (1) KR100598639B1 (zh)
CN (2) CN101795527B (zh)
SG (1) SG153664A1 (zh)
TW (1) TWI266962B (zh)

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JP5098126B2 (ja) * 2001-08-07 2012-12-12 株式会社ニコン Ｘ線発生装置、露光装置、露光方法及びデバイス製造方法
US7154109B2 (en) * 2004-09-30 2006-12-26 Intel Corporation Method and apparatus for producing electromagnetic radiation
CN101065999B (zh) * 2004-11-29 2011-04-06 皇家飞利浦电子股份有限公司 用于产生波长范围从大约1nm至大约30nm的辐射并在光刻装置或计量学中使用的方法和设备
DE102005007884A1 (de) * 2005-02-15 2006-08-24 Xtreme Technologies Gmbh Vorrichtung und Verfahren zur Erzeugung von extrem ultravioletter (EUV-) Strahlung
KR101177707B1 (ko) * 2005-02-25 2012-08-29 사이머 인코포레이티드 Ｅｕｖ 광원의 타겟 물질 핸들링을 위한 방법 및 장치
DE102005023060B4 (de) * 2005-05-19 2011-01-27 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Gasentladungs-Strahlungsquelle, insbesondere für EUV-Strahlung
DE102005039849B4 (de) * 2005-08-19 2011-01-27 Xtreme Technologies Gmbh Vorrichtung zur Strahlungserzeugung mittels einer Gasentladung
DE102005044141B4 (de) * 2005-09-15 2008-08-14 Qimonda Ag Belichtungsgerät und Verfahren zum Betrieb eines Belichtungsgeräts
US7462851B2 (en) * 2005-09-23 2008-12-09 Asml Netherlands B.V. Electromagnetic radiation source, lithographic apparatus, device manufacturing method and device manufactured thereby
DE102006003683B3 (de) * 2006-01-24 2007-09-13 Xtreme Technologies Gmbh Anordnung und Verfahren zur Erzeugung von EUV-Strahlung hoher Durchschnittsleistung
EP2020165B1 (en) * 2006-05-16 2010-11-24 Philips Intellectual Property & Standards GmbH A method of increasing the conversion efficiency of an euv and/or soft x-ray lamp and a corresponding apparatus
US8766212B2 (en) * 2006-07-19 2014-07-01 Asml Netherlands B.V. Correction of spatial instability of an EUV source by laser beam steering
US7518134B2 (en) * 2006-12-06 2009-04-14 Asml Netherlands B.V. Plasma radiation source for a lithographic apparatus
US7759663B1 (en) * 2006-12-06 2010-07-20 Asml Netherlands B.V. Self-shading electrodes for debris suppression in an EUV source
US7838853B2 (en) 2006-12-14 2010-11-23 Asml Netherlands B.V. Plasma radiation source, method of forming plasma radiation, apparatus for projecting a pattern from a patterning device onto a substrate and device manufacturing method
US7518135B2 (en) 2006-12-20 2009-04-14 Asml Netherlands B.V. Reducing fast ions in a plasma radiation source
US20080239262A1 (en) * 2007-03-29 2008-10-02 Asml Netherlands B.V. Radiation source for generating electromagnetic radiation and method for generating electromagnetic radiation
JP2008311465A (ja) * 2007-06-15 2008-12-25 Nikon Corp Ｅｕｖ光源、ｅｕｖ露光装置および半導体デバイスの製造方法
US8227771B2 (en) * 2007-07-23 2012-07-24 Asml Netherlands B.V. Debris prevention system and lithographic apparatus
US8493548B2 (en) * 2007-08-06 2013-07-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8901521B2 (en) 2007-08-23 2014-12-02 Asml Netherlands B.V. Module and method for producing extreme ultraviolet radiation
US7763871B2 (en) 2008-04-02 2010-07-27 Asml Netherlands B.V. Radiation source
JP5191541B2 (ja) * 2007-08-23 2013-05-08 エーエスエムエル ネザーランズ ビー．ブイ． 極端紫外線を生成するモジュールおよび方法、並びにリソグラフィ投影装置
NL2002890A1 (nl) * 2008-06-16 2009-12-17 Asml Netherlands Bv Lithographic apparatus.
EP2308272B1 (en) * 2008-07-28 2012-09-19 Philips Intellectual Property & Standards GmbH Method and device for generating euv radiation or soft x-rays
DE102010055889B4 (de) * 2010-12-21 2014-04-30 Ushio Denki Kabushiki Kaisha Verfahren und Vorrichtung zur Erzeugung kurzwelliger Strahlung mittels einer gasentladungsbasierten Hochfrequenzhochstromentladung
CN105573060B (zh) * 2014-10-16 2017-12-01 中芯国际集成电路制造(上海)有限公司 Euv光源和曝光装置、校准装置和校准方法
CN111585152B (zh) * 2020-04-08 2022-02-08 中国科学院微电子研究所 用于激光器腔室的电极、激光器系统及曝光设备
CN112164484B (zh) * 2020-08-21 2024-08-30 唐亚军 带电粒子加压器

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Also Published As

Publication number Publication date
CN100594428C (zh) 2010-03-17
JP4580959B2 (ja) 2010-11-17
KR100598639B1 (ko) 2006-07-07
SG153664A1 (en) 2009-07-29
KR20040025632A (ko) 2004-03-24
US7528395B2 (en) 2009-05-05
JP2004165155A (ja) 2004-06-10
JP2007305992A (ja) 2007-11-22
CN101795527B (zh) 2013-02-20
US20040105082A1 (en) 2004-06-03
CN101795527A (zh) 2010-08-04
CN1497349A (zh) 2004-05-19
TW200413860A (en) 2004-08-01
JP4381094B2 (ja) 2009-12-09

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