SG142143A1 - Abrading plate and polishing method using the same - Google Patents

Abrading plate and polishing method using the same

Info

Publication number
SG142143A1
SG142143A1 SG200407095-9A SG2004070959A SG142143A1 SG 142143 A1 SG142143 A1 SG 142143A1 SG 2004070959 A SG2004070959 A SG 2004070959A SG 142143 A1 SG142143 A1 SG 142143A1
Authority
SG
Singapore
Prior art keywords
polishing
abrasive particles
abrading plate
raised regions
less
Prior art date
Application number
SG200407095-9A
Other languages
English (en)
Inventor
Yutaka Wada
Hirokuni Hiyama
Kazuto Hirokawa
Hisanori Matsuo
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Publication of SG142143A1 publication Critical patent/SG142143A1/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B24B37/245—Pads with fixed abrasives
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
    • B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
    • B24D3/28—Resins or natural or synthetic macromolecular compounds
    • B24D3/32—Resins or natural or synthetic macromolecular compounds for porous or cellular structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
SG200407095-9A 1998-04-28 1999-04-28 Abrading plate and polishing method using the same SG142143A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP13443298 1998-04-28
JP15054698 1998-05-14

Publications (1)

Publication Number Publication Date
SG142143A1 true SG142143A1 (en) 2008-05-28

Family

ID=26468552

Family Applications (2)

Application Number Title Priority Date Filing Date
SG200104884A SG119138A1 (en) 1998-04-28 1999-04-28 Abrading plate and polishing method using the same
SG200407095-9A SG142143A1 (en) 1998-04-28 1999-04-28 Abrading plate and polishing method using the same

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG200104884A SG119138A1 (en) 1998-04-28 1999-04-28 Abrading plate and polishing method using the same

Country Status (6)

Country Link
US (2) US6413149B1 (de)
EP (1) EP0999013B1 (de)
KR (1) KR100567981B1 (de)
DE (1) DE69937181T2 (de)
SG (2) SG119138A1 (de)
WO (1) WO1999055493A1 (de)

Families Citing this family (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3770752B2 (ja) 1998-08-11 2006-04-26 株式会社日立製作所 半導体装置の製造方法及び加工装置
DE60032423T2 (de) 1999-08-18 2007-10-11 Ebara Corp. Verfahren und Einrichtung zum Polieren
US6616513B1 (en) 2000-04-07 2003-09-09 Applied Materials, Inc. Grid relief in CMP polishing pad to accurately measure pad wear, pad profile and pad wear profile
US20020016139A1 (en) * 2000-07-25 2002-02-07 Kazuto Hirokawa Polishing tool and manufacturing method therefor
JP3914964B2 (ja) * 2000-09-21 2007-05-16 高橋金属株式会社 電解イオン水を混合した水溶性クーラント液及び製造装置
JP2002343756A (ja) * 2001-05-21 2002-11-29 Tokyo Seimitsu Co Ltd ウェーハ平面加工装置
US6706632B2 (en) * 2002-04-25 2004-03-16 Micron Technology, Inc. Methods for forming capacitor structures; and methods for removal of organic materials
JP2003318140A (ja) * 2002-04-26 2003-11-07 Applied Materials Inc 研磨方法及び装置
JP4163485B2 (ja) * 2002-10-25 2008-10-08 不二越機械工業株式会社 両面研磨装置およびこれを用いた研磨加工方法
US20050048768A1 (en) * 2003-08-26 2005-03-03 Hiroaki Inoue Apparatus and method for forming interconnects
US20050106359A1 (en) * 2003-11-13 2005-05-19 Honeywell International Inc. Method of processing substrate
JP4767643B2 (ja) * 2005-09-29 2011-09-07 Ｎｔｎ株式会社 テープ研磨装置
US7226345B1 (en) 2005-12-09 2007-06-05 The Regents Of The University Of California CMP pad with designed surface features
US7544618B2 (en) * 2006-05-18 2009-06-09 Macronix International Co., Ltd. Two-step chemical mechanical polishing process
JP5025188B2 (ja) * 2006-08-23 2012-09-12 株式会社ディスコ ウエーハ研削方法
CN100443260C (zh) * 2006-11-08 2008-12-17 大连理工大学 一种硬脆晶体基片的无损伤磨削方法
JP5617387B2 (ja) * 2010-07-06 2014-11-05 富士電機株式会社 垂直磁気記録媒体用基板の製造方法、および、該製造方法により製造される垂直磁気記録媒体用基板
TWI613285B (zh) 2010-09-03 2018-02-01 聖高拜磨料有限公司 粘結的磨料物品及形成方法
US9393669B2 (en) 2011-10-21 2016-07-19 Strasbaugh Systems and methods of processing substrates
US8968052B2 (en) 2011-10-21 2015-03-03 Strasbaugh Systems and methods of wafer grinding
JP6202544B2 (ja) 2012-08-27 2017-09-27 アクティエボラゲット エレクトロラックス ロボット位置決めシステム
US9457446B2 (en) 2012-10-01 2016-10-04 Strasbaugh Methods and systems for use in grind shape control adaptation
US9610669B2 (en) 2012-10-01 2017-04-04 Strasbaugh Methods and systems for use in grind spindle alignment
JP2016501735A (ja) * 2012-12-31 2016-01-21 サンーゴバン アブレイシブズ，インコーポレイティド 結合研磨物品および研削方法
WO2014106159A1 (en) 2012-12-31 2014-07-03 Saint-Gobain Abrasives, Inc. Bonded abrasive article and method of grinding
US9266219B2 (en) * 2012-12-31 2016-02-23 Saint-Gobain Abrasives, Inc. Bonded abrasive article and method of grinding
DE112014001102T5 (de) 2013-03-31 2015-11-19 Saint-Gobain Abrasifs Gebundener Schleifartikel und Schleifverfahren
US10448794B2 (en) 2013-04-15 2019-10-22 Aktiebolaget Electrolux Robotic vacuum cleaner
CN105101855A (zh) 2013-04-15 2015-11-25 伊莱克斯公司 具有伸出的侧刷的机器人真空吸尘器
US10149589B2 (en) 2013-12-19 2018-12-11 Aktiebolaget Electrolux Sensing climb of obstacle of a robotic cleaning device
KR102124235B1 (ko) 2013-12-19 2020-06-24 에이비 엘렉트로룩스 주변 기록 기능을 갖는 로봇 청소 디바이스
US10433697B2 (en) 2013-12-19 2019-10-08 Aktiebolaget Electrolux Adaptive speed control of rotating side brush
US9946263B2 (en) 2013-12-19 2018-04-17 Aktiebolaget Electrolux Prioritizing cleaning areas
KR102137857B1 (ko) 2013-12-19 2020-07-24 에이비 엘렉트로룩스 로봇 청소 장치 및 랜드마크 인식 방법
US9728415B2 (en) 2013-12-19 2017-08-08 STATS ChipPAC Pte. Ltd. Semiconductor device and method of wafer thinning involving edge trimming and CMP
WO2015090397A1 (en) 2013-12-19 2015-06-25 Aktiebolaget Electrolux Robotic cleaning device
US10045675B2 (en) 2013-12-19 2018-08-14 Aktiebolaget Electrolux Robotic vacuum cleaner with side brush moving in spiral pattern
EP3082539B1 (de) 2013-12-20 2019-02-20 Aktiebolaget Electrolux Staubbehälter
EP3167341B1 (de) 2014-07-10 2018-05-09 Aktiebolaget Electrolux Verfahren zur erkennung eines messfehlers in einer robotischen reinigungsvorrichtung
EP3190938A1 (de) 2014-09-08 2017-07-19 Aktiebolaget Electrolux Robotischer staubsauger
US10499778B2 (en) 2014-09-08 2019-12-10 Aktiebolaget Electrolux Robotic vacuum cleaner
US10877484B2 (en) 2014-12-10 2020-12-29 Aktiebolaget Electrolux Using laser sensor for floor type detection
WO2016091320A1 (en) 2014-12-12 2016-06-16 Aktiebolaget Electrolux Side brush and robotic cleaner
CN107003669B (zh) 2014-12-16 2023-01-31 伊莱克斯公司 用于机器人清洁设备的基于经验的路标
JP6532530B2 (ja) 2014-12-16 2019-06-19 アクチエボラゲット エレクトロルックス ロボット掃除機の掃除方法
JP6743828B2 (ja) 2015-04-17 2020-08-19 アクチエボラゲット エレクトロルックス ロボット掃除機およびロボット掃除機を制御する方法
KR102445064B1 (ko) 2015-09-03 2022-09-19 에이비 엘렉트로룩스 로봇 청소 장치의 시스템
JP7035300B2 (ja) 2016-03-15 2022-03-15 アクチエボラゲット エレクトロルックス ロボット清掃デバイス、ロボット清掃デバイスにおける、断崖検出を遂行する方法、コンピュータプログラム、およびコンピュータプログラム製品
WO2017194102A1 (en) 2016-05-11 2017-11-16 Aktiebolaget Electrolux Robotic cleaning device
JP6680639B2 (ja) * 2016-07-27 2020-04-15 株式会社ディスコ 加工方法
JP6858529B2 (ja) * 2016-10-14 2021-04-14 株式会社ディスコ 保持テーブルの保持面形成方法、研削装置及び研削ホイール
WO2018219473A1 (en) 2017-06-02 2018-12-06 Aktiebolaget Electrolux Method of detecting a difference in level of a surface in front of a robotic cleaning device
WO2019063066A1 (en) 2017-09-26 2019-04-04 Aktiebolaget Electrolux CONTROL FOR MOVING A ROBOTIC CLEANING DEVICE
CN112259454B (zh) * 2019-07-22 2024-04-12 华邦电子股份有限公司 化学机械研磨制程
US20220324081A1 (en) * 2019-08-27 2022-10-13 Applied Materials, Inc. Chemical mechanical polishing correction tool
KR102526513B1 (ko) * 2021-05-26 2023-04-26 에스케이엔펄스 주식회사 연마패드 접착필름, 이를 포함하는 연마패드 적층체 및 웨이퍼의 연마방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10217103A (ja) * 1997-02-07 1998-08-18 Ebara Corp 研磨用クロスのドレッサー及びその製造方法
JPH10315131A (ja) * 1997-05-23 1998-12-02 Hitachi Ltd 半導体ウエハの研磨方法およびその装置

Family Cites Families (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3121143A (en) * 1962-03-30 1964-02-11 Alfred E Landry Rotary electric switch
JPS6017664B2 (ja) 1980-02-01 1985-05-04 株式会社 デイスコ 研削ホィ−ル
US3841031A (en) 1970-10-21 1974-10-15 Monsanto Co Process for polishing thin elements
US4010583A (en) * 1974-05-28 1977-03-08 Engelhard Minerals & Chemicals Corporation Fixed-super-abrasive tool and method of manufacture thereof
JPS6012191B2 (ja) * 1979-09-25 1985-03-30 昭和電工株式会社 シリコン半導体の鏡面仕上げ用研摩素子及び鏡面仕上げ法
JPS58143948A (ja) 1982-02-19 1983-08-26 Hitachi Ltd ウエハ研削装置
AU570439B2 (en) 1983-03-28 1988-03-17 Compression Labs, Inc. A combined intraframe and interframe transform coding system
US4652275A (en) * 1985-08-07 1987-03-24 Minnesota Mining And Manufacturing Company Erodable agglomerates and abrasive products containing the same
JPH01140967A (ja) 1987-11-27 1989-06-02 Hitachi Ltd 研削装置
JP3014062B2 (ja) 1991-05-30 2000-02-28 東芝タンガロイ株式会社 精密加工用砥石
JP3048073B2 (ja) * 1991-06-27 2000-06-05 東芝タンガロイ株式会社 精密加工用レジンボンド砥石
US5135892A (en) * 1991-07-12 1992-08-04 Norton Company Boron suboxide material and method for its preparation
JPH05285850A (ja) 1992-04-10 1993-11-02 Nippon Steel Corp 研削・研磨ホイールおよび研削・研磨方法
JPH05309566A (ja) 1992-04-21 1993-11-22 Sony Corp 研削液供給構造
US6099394A (en) * 1998-02-10 2000-08-08 Rodel Holdings, Inc. Polishing system having a multi-phase polishing substrate and methods relating thereto
US5307593A (en) * 1992-08-31 1994-05-03 Minnesota Mining And Manufacturing Company Method of texturing rigid memory disks using an abrasive article
DE69315088T2 (de) * 1992-12-17 1998-03-26 Minnesota Mining & Mfg Aufschlaemmungen mit reduzierter viskositaet, daraus hergestellte schleifgegenstaende und verfahren zur herstellung der gegenstaende
US5549962A (en) * 1993-06-30 1996-08-27 Minnesota Mining And Manufacturing Company Precisely shaped particles and method of making the same
US5503592A (en) 1994-02-02 1996-04-02 Turbofan Ltd. Gemstone working apparatus
FR2718379B3 (fr) * 1994-04-12 1996-05-24 Norton Sa Meules super abrasives.
TW383322B (en) * 1994-11-02 2000-03-01 Norton Co An improved method for preparing mixtures for abrasive articles
JP3605192B2 (ja) * 1995-08-10 2004-12-22 不二越機械工業株式会社 超微粉シリカ砥石およびその製造方法
WO1997010613A1 (fr) 1995-09-13 1997-03-20 Hitachi, Ltd. Procede et dispositif de meulage
JPH09174428A (ja) * 1995-12-27 1997-07-08 Toshiba Corp ラップ加工方法
JP3510036B2 (ja) 1996-02-22 2004-03-22 株式会社ルネサステクノロジ 半導体装置の製造方法
US5885134A (en) * 1996-04-18 1999-03-23 Ebara Corporation Polishing apparatus
EP0807492B1 (de) * 1996-05-16 2003-03-19 Ebara Corporation Verfahren und Vorrichtung zum Polieren von Werkstücken
US5782675A (en) * 1996-10-21 1998-07-21 Micron Technology, Inc. Apparatus and method for refurbishing fixed-abrasive polishing pads used in chemical-mechanical planarization of semiconductor wafers
JPH10134316A (ja) * 1996-10-24 1998-05-22 Hitachi Metals Ltd 磁気ヘッドの加工方法
JP3348429B2 (ja) 1996-12-26 2002-11-20 信越半導体株式会社 薄板ワーク平面研削方法
US5993298A (en) * 1997-03-06 1999-11-30 Keltech Engineering Lapping apparatus and process with controlled liquid flow across the lapping surface
US6019670A (en) * 1997-03-10 2000-02-01 Applied Materials, Inc. Method and apparatus for conditioning a polishing pad in a chemical mechanical polishing system
JP3225273B2 (ja) * 1997-03-26 2001-11-05 株式会社スーパーシリコン研究所 ウエハ基板の総合研磨装置
US6062958A (en) 1997-04-04 2000-05-16 Micron Technology, Inc. Variable abrasive polishing pad for mechanical and chemical-mechanical planarization
US5990010A (en) * 1997-04-08 1999-11-23 Lsi Logic Corporation Pre-conditioning polishing pads for chemical-mechanical polishing
JPH10329031A (ja) * 1997-05-29 1998-12-15 Hitachi Chem Co Ltd 半導体素子類の研磨方法およびそれに用いる樹脂砥石の製造方法
JP3722591B2 (ja) * 1997-05-30 2005-11-30 株式会社日立製作所 研磨装置
MY124578A (en) * 1997-06-17 2006-06-30 Showa Denko Kk Magnetic hard disc substrate and process for manufacturing the same
US5957754A (en) * 1997-08-29 1999-09-28 Applied Materials, Inc. Cavitational polishing pad conditioner
US6121143A (en) * 1997-09-19 2000-09-19 3M Innovative Properties Company Abrasive articles comprising a fluorochemical agent for wafer surface modification
US5972162A (en) 1998-01-06 1999-10-26 Speedfam Corporation Wafer polishing with improved end point detection
JPH11198045A (ja) * 1998-01-19 1999-07-27 Tosoh Corp 研磨用成形体、それを用いた研磨用定盤及び研磨方法
JPH11300607A (ja) 1998-04-16 1999-11-02 Speedfam-Ipec Co Ltd 研磨装置
US5897426A (en) * 1998-04-24 1999-04-27 Applied Materials, Inc. Chemical mechanical polishing with multiple polishing pads
JP3942282B2 (ja) * 1998-08-06 2007-07-11 勇蔵 森 ポリッシング方法及び装置
US6152806A (en) 1998-12-14 2000-11-28 Applied Materials, Inc. Concentric platens
US6322427B1 (en) * 1999-04-30 2001-11-27 Applied Materials, Inc. Conditioning fixed abrasive articles
US6050882A (en) * 1999-06-10 2000-04-18 Applied Materials, Inc. Carrier head to apply pressure to and retain a substrate
US6325709B1 (en) * 1999-11-18 2001-12-04 Chartered Semiconductor Manufacturing Ltd Rounded surface for the pad conditioner using high temperature brazing
US6431959B1 (en) * 1999-12-20 2002-08-13 Lam Research Corporation System and method of defect optimization for chemical mechanical planarization of polysilicon

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10217103A (ja) * 1997-02-07 1998-08-18 Ebara Corp 研磨用クロスのドレッサー及びその製造方法
JPH10315131A (ja) * 1997-05-23 1998-12-02 Hitachi Ltd 半導体ウエハの研磨方法およびその装置

Also Published As

Publication number Publication date
DE69937181T2 (de) 2008-06-19
EP0999013A4 (de) 2004-07-14
DE69937181D1 (de) 2007-11-08
KR100567981B1 (ko) 2006-04-05
US6413149B1 (en) 2002-07-02
US6942548B2 (en) 2005-09-13
EP0999013A1 (de) 2000-05-10
KR20010014244A (ko) 2001-02-26
WO1999055493A1 (fr) 1999-11-04
EP0999013B1 (de) 2007-09-26
SG119138A1 (en) 2006-02-28
US20020006768A1 (en) 2002-01-17

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