SG136966A1 - Composition for stripping and cleaning and use thereof - Google Patents

Composition for stripping and cleaning and use thereof

Info

Publication number
SG136966A1
SG136966A1 SG200717322-2A SG2007173222A SG136966A1 SG 136966 A1 SG136966 A1 SG 136966A1 SG 2007173222 A SG2007173222 A SG 2007173222A SG 136966 A1 SG136966 A1 SG 136966A1
Authority
SG
Singapore
Prior art keywords
composition
disclosed
containing compound
fluoride containing
article
Prior art date
Application number
SG200717322-2A
Other languages
English (en)
Inventor
Matthew I Egbe
Michael Legenza
Thomas Wieder
Jennifer M Rieker
Original Assignee
Air Prod & Chem
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Prod & Chem filed Critical Air Prod & Chem
Publication of SG136966A1 publication Critical patent/SG136966A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C11D7/5022—Organic solvents containing oxygen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/10—Salts
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/263—Ethers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/28—Organic compounds containing halogen
    • C11D7/30—Halogenated hydrocarbons
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
    • C23G1/04—Cleaning or pickling metallic material with solutions or molten salts with acid solutions using inhibitors
    • C23G1/06—Cleaning or pickling metallic material with solutions or molten salts with acid solutions using inhibitors organic inhibitors
    • C23G1/061—Cleaning or pickling metallic material with solutions or molten salts with acid solutions using inhibitors organic inhibitors nitrogen-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
    • C23G1/16—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions using inhibitors
    • C23G1/18—Organic inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Wood Science & Technology (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Inorganic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Detergent Compositions (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
SG200717322-2A 2004-07-01 2005-06-27 Composition for stripping and cleaning and use thereof SG136966A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US58473304P 2004-07-01 2004-07-01
US11/155,654 US8030263B2 (en) 2004-07-01 2005-06-20 Composition for stripping and cleaning and use thereof

Publications (1)

Publication Number Publication Date
SG136966A1 true SG136966A1 (en) 2007-11-29

Family

ID=35058480

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200717322-2A SG136966A1 (en) 2004-07-01 2005-06-27 Composition for stripping and cleaning and use thereof

Country Status (10)

Country Link
US (2) US8030263B2 (zh)
EP (1) EP1612858B1 (zh)
JP (2) JP2006049860A (zh)
KR (1) KR100770624B1 (zh)
CN (2) CN101857825B (zh)
AT (1) ATE495546T1 (zh)
DE (1) DE602005025830D1 (zh)
IL (1) IL169438A0 (zh)
SG (1) SG136966A1 (zh)
TW (1) TWI274968B (zh)

Families Citing this family (92)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9236279B2 (en) * 2003-06-27 2016-01-12 Lam Research Corporation Method of dielectric film treatment
US8030263B2 (en) * 2004-07-01 2011-10-04 Air Products And Chemicals, Inc. Composition for stripping and cleaning and use thereof
US9217929B2 (en) * 2004-07-22 2015-12-22 Air Products And Chemicals, Inc. Composition for removing photoresist and/or etching residue from a substrate and use thereof
US20060063687A1 (en) * 2004-09-17 2006-03-23 Minsek David W Composition and process for ashless removal of post-etch photoresist and/or bottom anti-reflective material on a substrate
US20060116313A1 (en) * 2004-11-30 2006-06-01 Denise Geitz Compositions comprising tannic acid as corrosion inhibitor
KR101238471B1 (ko) * 2005-02-25 2013-03-04 이케이씨 테크놀로지, 인코포레이티드 구리 및 저 ｋ 유전체 물질을 갖는 기판으로부터 레지스트,에칭 잔류물 및 구리 산화물을 제거하는 방법
CN102981377B (zh) 2005-06-07 2014-11-12 高级技术材料公司 金属和电介质相容的牺牲性抗反射涂层清洗及去除组合物
US7700533B2 (en) * 2005-06-23 2010-04-20 Air Products And Chemicals, Inc. Composition for removal of residue comprising cationic salts and methods using same
TWI339780B (en) * 2005-07-28 2011-04-01 Rohm & Haas Elect Mat Stripper
TW200722505A (en) * 2005-09-30 2007-06-16 Rohm & Haas Elect Mat Stripper
US20090032766A1 (en) * 2005-10-05 2009-02-05 Advanced Technology Materials, Inc. Composition and method for selectively etching gate spacer oxide material
US8263539B2 (en) * 2005-10-28 2012-09-11 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and methods for its use
US7632796B2 (en) 2005-10-28 2009-12-15 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use
US9329486B2 (en) 2005-10-28 2016-05-03 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use
JP4826235B2 (ja) * 2005-12-01 2011-11-30 三菱瓦斯化学株式会社 半導体表面処理剤
US7674755B2 (en) * 2005-12-22 2010-03-09 Air Products And Chemicals, Inc. Formulation for removal of photoresist, etch residue and BARC
US9058975B2 (en) * 2006-06-09 2015-06-16 Lam Research Corporation Cleaning solution formulations for substrates
KR100793241B1 (ko) 2006-06-19 2008-01-10 삼성전자주식회사 실리콘 고분자 및 포토레지스트 제거용 조성물, 이를이용한 막 제거 방법 및 패턴 형성 방법
JP5159066B2 (ja) * 2006-08-24 2013-03-06 ダイキン工業株式会社 半導体ドライプロセス後の残渣除去液及びそれを用いた残渣除去方法
JP5007089B2 (ja) * 2006-09-08 2012-08-22 富士フイルム株式会社 レジストの剥離方法
US20080076688A1 (en) * 2006-09-21 2008-03-27 Barnes Jeffrey A Copper passivating post-chemical mechanical polishing cleaning composition and method of use
CN101169598A (zh) * 2006-10-27 2008-04-30 安集微电子（上海）有限公司 一种光刻胶清洗剂
CN101201556A (zh) * 2006-12-15 2008-06-18 安集微电子（上海）有限公司 低蚀刻性光刻胶清洗剂
US8026201B2 (en) * 2007-01-03 2011-09-27 Az Electronic Materials Usa Corp. Stripper for coating layer
US7879783B2 (en) 2007-01-11 2011-02-01 Air Products And Chemicals, Inc. Cleaning composition for semiconductor substrates
CN101290482A (zh) * 2007-04-19 2008-10-22 安集微电子（上海）有限公司 一种清洗等离子刻蚀残留物的清洗液
CN101339368A (zh) * 2007-07-06 2009-01-07 安集微电子（上海）有限公司 一种光刻胶清洗剂
CN101364056A (zh) * 2007-08-10 2009-02-11 安集微电子（上海）有限公司 一种光刻胶清洗剂
US8551682B2 (en) 2007-08-15 2013-10-08 Dynaloy, Llc Metal conservation with stripper solutions containing resorcinol
CN101373340B (zh) * 2007-08-23 2013-07-10 安集微电子（上海）有限公司 一种光刻胶清洗剂
CN101398638A (zh) * 2007-09-29 2009-04-01 安集微电子（上海）有限公司 一种光刻胶清洗剂
CN101412949A (zh) * 2007-10-19 2009-04-22 安集微电子（上海）有限公司 一种等离子刻蚀残留物清洗液
CN101842872A (zh) * 2007-10-31 2010-09-22 Ekc技术公司 用于剥除光刻胶的化合物
KR100928996B1 (ko) 2007-11-05 2009-11-26 리퀴드테크놀로지(주) 포토레지스트 박리액 조성물
TWI415936B (zh) * 2007-11-23 2013-11-21 Anji Microelectronics Co Ltd 低蝕刻性較厚光阻清洗液
US8168577B2 (en) * 2008-02-29 2012-05-01 Avantor Performance Materials, Inc. Post plasma etch/ash residue and silicon-based anti-reflective coating remover compositions containing tetrafluoroborate ion
US8357646B2 (en) * 2008-03-07 2013-01-22 Air Products And Chemicals, Inc. Stripper for dry film removal
US7687447B2 (en) * 2008-03-13 2010-03-30 Air Products And Chemicals, Inc. Semi-aqueous stripping and cleaning composition containing aminobenzenesulfonic acid
US20090229629A1 (en) * 2008-03-14 2009-09-17 Air Products And Chemicals, Inc. Stripper For Copper/Low k BEOL Clean
TWI450052B (zh) * 2008-06-24 2014-08-21 Dynaloy Llc 用於後段製程操作有效之剝離溶液
CN101614970B (zh) * 2008-06-27 2012-12-19 安集微电子（上海）有限公司 一种光刻胶清洗剂组合物
JP5476388B2 (ja) * 2008-10-09 2014-04-23 アバントール パフォーマンス マテリアルズ， インコーポレイテッド 酸化銅エッチ残渣除去および、銅電着の防止のための水性の酸性洗浄用組成物
US20100151206A1 (en) 2008-12-11 2010-06-17 Air Products And Chemicals, Inc. Method for Removal of Carbon From An Organosilicate Material
US8309502B2 (en) * 2009-03-27 2012-11-13 Eastman Chemical Company Compositions and methods for removing organic substances
US8614053B2 (en) 2009-03-27 2013-12-24 Eastman Chemical Company Processess and compositions for removing substances from substrates
US8444768B2 (en) 2009-03-27 2013-05-21 Eastman Chemical Company Compositions and methods for removing organic substances
US9481937B2 (en) * 2009-04-30 2016-11-01 Asm America, Inc. Selective etching of reactor surfaces
US8110535B2 (en) * 2009-08-05 2012-02-07 Air Products And Chemicals, Inc. Semi-aqueous stripping and cleaning formulation for metal substrate and methods for using same
KR20110028109A (ko) * 2009-09-11 2011-03-17 동우 화인켐 주식회사 세정액 조성물
EP2478068A1 (en) * 2009-09-18 2012-07-25 Merck Patent GmbH Ink jet printable etching inks and associated process
TWI470119B (zh) * 2009-11-13 2015-01-21 Avantor Performance Mat Inc 用於氧化銅蝕刻殘留物之移除及避免銅電鍍之水相酸性調配物
TWI539493B (zh) 2010-03-08 2016-06-21 黛納羅伊有限責任公司 用於摻雜具有分子單層之矽基材之方法及組合物
JP5513196B2 (ja) * 2010-03-25 2014-06-04 富士フイルム株式会社 洗浄組成物及び半導体装置の製造方法
KR101169332B1 (ko) * 2010-05-12 2012-07-30 주식회사 이엔에프테크놀로지 포토레지스트 박리액 조성물
JP5508130B2 (ja) * 2010-05-14 2014-05-28 富士フイルム株式会社 洗浄組成物、半導体装置の製造方法及び洗浄方法
CN102338994B (zh) * 2010-07-23 2014-12-31 安集微电子（上海）有限公司 一种光刻胶的清洗液
CN102346383B (zh) * 2010-08-06 2016-03-16 安集微电子（上海）有限公司 一种光刻胶的清洗液
US20120073607A1 (en) * 2010-09-27 2012-03-29 Eastman Chemical Company Polymeric or monomeric compositions comprising at least one mono-amide and/or at least one diamide for removing substances from substrates and methods for using the same
US8449681B2 (en) * 2010-12-16 2013-05-28 Intermolecular, Inc. Composition and method for removing photoresist and bottom anti-reflective coating for a semiconductor substrate
US8889471B2 (en) 2011-05-09 2014-11-18 Sichuan Yinhe Chemical Co., Ltd. Burnthrough formulations
US9412628B2 (en) * 2011-06-30 2016-08-09 Tel Fsi, Inc. Acid treatment strategies useful to fabricate microelectronic devices and precursors thereof
TW201311884A (zh) * 2011-09-13 2013-03-16 Anji Microelectronics Co Ltd 光阻（光刻）膠的清洗液
TW201311883A (zh) * 2011-09-13 2013-03-16 Anji Microelectronics Co Ltd 光阻（光刻）膠的清洗液
WO2013052809A1 (en) * 2011-10-05 2013-04-11 Avantor Performance Materials, Inc. Microelectronic substrate cleaning compositions having copper/azole polymer inhibition
JP5871562B2 (ja) * 2011-11-01 2016-03-01 東京応化工業株式会社 フォトリソグラフィ用剥離液及びパターン形成方法
JP6157081B2 (ja) * 2012-09-24 2017-07-05 東京応化工業株式会社 フォトリソグラフィ用剥離液、及びパターン形成方法
CN102880017B (zh) * 2012-09-28 2014-07-23 京东方科技集团股份有限公司 光刻胶用剥离液组合物及其制备和应用
JP6029419B2 (ja) * 2012-11-02 2016-11-24 ダイキン工業株式会社 半導体ドライプロセス後の残渣除去液及びそれを用いた残渣除去方法
US9158202B2 (en) * 2012-11-21 2015-10-13 Dynaloy, Llc Process and composition for removing substances from substrates
US10189712B2 (en) 2013-03-15 2019-01-29 International Business Machines Corporation Oxidation of porous, carbon-containing materials using fuel and oxidizing agent
KR102091543B1 (ko) * 2013-08-01 2020-03-23 동우 화인켐 주식회사 망상형 고분자 용해용 조성물
CN104651081A (zh) * 2013-11-18 2015-05-27 青岛锦涟鑫商贸有限公司 一种新型清洗剂
KR101964901B1 (ko) 2013-12-06 2019-04-02 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 표면 잔류물 제거용 세정 제형
CN104277925A (zh) * 2014-10-09 2015-01-14 济南瑞东实业有限公司 一种高效无污染乙烯油基清洗剂及其制备方法
CN113214920A (zh) * 2015-03-31 2021-08-06 弗萨姆材料美国有限责任公司 清洁制剂
US10072237B2 (en) 2015-08-05 2018-09-11 Versum Materials Us, Llc Photoresist cleaning composition used in photolithography and a method for treating substrate therewith
CN105132217A (zh) * 2015-08-30 2015-12-09 烟台顺隆化工科技有限公司 一种锌污染建筑废物用洗涤剂
CN107034028B (zh) * 2015-12-04 2021-05-25 三星电子株式会社 用于除去有机硅树脂的组合物、使用其薄化基材和制造半导体封装体的方法及使用其的系统
US10894935B2 (en) 2015-12-04 2021-01-19 Samsung Electronics Co., Ltd. Composition for removing silicone resins and method of thinning substrate by using the same
US11175587B2 (en) * 2017-09-29 2021-11-16 Versum Materials Us, Llc Stripper solutions and methods of using stripper solutions
EP3480288A1 (en) * 2017-11-07 2019-05-08 Henkel AG & Co. KGaA Fluoride based cleaning composition
KR102467591B1 (ko) * 2018-10-16 2022-11-16 쇼와 덴코 가부시키가이샤 조성물, 접착성 폴리머의 세정 방법, 디바이스 웨이퍼의 제조 방법, 및 지지 웨이퍼의 재생 방법
WO2020148968A1 (ja) * 2019-01-15 2020-07-23 昭和電工株式会社 分解洗浄組成物、接着性ポリマーの洗浄方法、及びデバイスウェハの製造方法
WO2020166702A1 (ja) * 2019-02-15 2020-08-20 日産化学株式会社 洗浄剤組成物及び洗浄方法
JP7220119B2 (ja) * 2019-05-22 2023-02-09 信越化学工業株式会社 基板用仮接着剤の洗浄液、基板の洗浄方法および支持体または基板の洗浄方法
KR20220011151A (ko) * 2019-05-22 2022-01-27 신에쓰 가가꾸 고교 가부시끼가이샤 세정제 조성물, 기판의 세정 방법 및 지지체 또는 기판의 세정 방법
KR102397700B1 (ko) * 2019-09-06 2022-05-17 엘티씨 (주) 세정제 조성물
CN114746536B (zh) * 2019-11-25 2024-01-09 株式会社力森诺科 分解清洗组合物的制造方法
TWI749964B (zh) * 2020-12-24 2021-12-11 達興材料股份有限公司 鹼性清洗組合物、清洗方法和半導體製造方法
CN112698554A (zh) * 2021-02-01 2021-04-23 福建省佑达环保材料有限公司 一种半导体制程用光阻清洗剂
CN114426909A (zh) * 2022-02-22 2022-05-03 伊利诺斯工具制品有限公司 一种积碳清洗方法
CN115537277A (zh) * 2022-09-29 2022-12-30 南通群安电子材料有限公司 一种用于电路板的环保清洗液

Family Cites Families (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3160344B2 (ja) 1991-01-25 2001-04-25 アシュランド インコーポレーテッド 有機ストリッピング組成物
US7144848B2 (en) * 1992-07-09 2006-12-05 Ekc Technology, Inc. Cleaning compositions containing hydroxylamine derivatives and processes using same for residue removal
JPH0770534B2 (ja) * 1993-01-11 1995-07-31 日本電気株式会社 半導体装置の製造方法
DE9304878U1 (zh) * 1993-03-31 1993-06-09 Hoechst Ag, 6230 Frankfurt, De
US5563119A (en) * 1995-01-26 1996-10-08 Ashland Inc. Stripping compositions containing alkanolamine compounds
JP3236220B2 (ja) * 1995-11-13 2001-12-10 東京応化工業株式会社 レジスト用剥離液組成物
US6417112B1 (en) * 1998-07-06 2002-07-09 Ekc Technology, Inc. Post etch cleaning composition and process for dual damascene system
US20030166132A1 (en) * 1998-08-26 2003-09-04 Genentech, Inc. Secreted and transmembrane polypeptides and nucleic acids encoding the same
US20050019868A1 (en) 1998-09-03 2005-01-27 Japan Science And Technology Corporation Neutral amino acid transporter and gene thereof
US6828289B2 (en) * 1999-01-27 2004-12-07 Air Products And Chemicals, Inc. Low surface tension, low viscosity, aqueous, acidic compositions containing fluoride and organic, polar solvents for removal of photoresist and organic and inorganic etch residues at room temperature
US6117364A (en) * 1999-05-27 2000-09-12 Nalco/Exxon Energy Chemicals, L.P. Acid corrosion inhibitor
JP2001100436A (ja) * 1999-09-28 2001-04-13 Mitsubishi Gas Chem Co Inc レジスト剥離液組成物
TWI243204B (en) * 2000-02-04 2005-11-11 Sumitomo Chemical Co Electronic parts cleaning solution
US6531436B1 (en) * 2000-02-25 2003-03-11 Shipley Company, L.L.C. Polymer removal
EP1138726B1 (en) 2000-03-27 2005-01-12 Shipley Company LLC Polymer remover
US20050198688A1 (en) * 2000-09-19 2005-09-08 Fong Thomas K.T. System and method for digitally monitoring a cable plant
KR100822236B1 (ko) * 2000-11-30 2008-04-16 토소가부시키가이샤 레지스트 박리제
US20030022800A1 (en) * 2001-06-14 2003-01-30 Peters Darryl W. Aqueous buffered fluoride-containing etch residue removers and cleaners
MY143399A (en) * 2001-07-09 2011-05-13 Avantor Performance Mat Inc Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning
JP3403187B2 (ja) * 2001-08-03 2003-05-06 東京応化工業株式会社 ホトレジスト用剥離液
TWI297102B (en) * 2001-08-03 2008-05-21 Nec Electronics Corp Removing composition
JP4661007B2 (ja) 2001-08-23 2011-03-30 昭和電工株式会社 サイドウォール除去液
JP3797541B2 (ja) * 2001-08-31 2006-07-19 東京応化工業株式会社 ホトレジスト用剥離液
JP3900882B2 (ja) * 2001-10-05 2007-04-04 松下電器産業株式会社 焼却装置
US20030138737A1 (en) * 2001-12-27 2003-07-24 Kazumasa Wakiya Photoresist stripping solution and a method of stripping photoresists using the same
KR101017738B1 (ko) * 2002-03-12 2011-02-28 미츠비시 가스 가가쿠 가부시키가이샤 포토레지스트 박리제 조성물 및 세정 조성물
US6773873B2 (en) * 2002-03-25 2004-08-10 Advanced Technology Materials, Inc. pH buffered compositions useful for cleaning residue from semiconductor substrates
AU2003225178A1 (en) * 2002-04-24 2003-11-10 Ekc Technology, Inc. Oxalic acid as a cleaning product for aluminium, copper and dielectric surfaces
JP2004029346A (ja) * 2002-06-25 2004-01-29 Mitsubishi Gas Chem Co Inc レジスト剥離液組成物
US6677286B1 (en) * 2002-07-10 2004-01-13 Air Products And Chemicals, Inc. Compositions for removing etching residue and use thereof
JP4443864B2 (ja) * 2002-07-12 2010-03-31 株式会社ルネサステクノロジ レジストまたはエッチング残さ物除去用洗浄液および半導体装置の製造方法
US6849200B2 (en) 2002-07-23 2005-02-01 Advanced Technology Materials, Inc. Composition and process for wet stripping removal of sacrificial anti-reflective material
JP2004133384A (ja) * 2002-08-14 2004-04-30 Sony Corp レジスト用剥離剤組成物及び半導体装置の製造方法
US7833957B2 (en) * 2002-08-22 2010-11-16 Daikin Industries, Ltd. Removing solution
US7166419B2 (en) * 2002-09-26 2007-01-23 Air Products And Chemicals, Inc. Compositions substrate for removing etching residue and use thereof
TW200505975A (en) * 2003-04-18 2005-02-16 Ekc Technology Inc Aqueous fluoride compositions for cleaning semiconductor devices
US20040220066A1 (en) * 2003-05-01 2004-11-04 Rohm And Haas Electronic Materials, L.L.C. Stripper
US20060003910A1 (en) * 2004-06-15 2006-01-05 Hsu Jiun Y Composition and method comprising same for removing residue from a substrate
US8030263B2 (en) * 2004-07-01 2011-10-04 Air Products And Chemicals, Inc. Composition for stripping and cleaning and use thereof
US9217929B2 (en) * 2004-07-22 2015-12-22 Air Products And Chemicals, Inc. Composition for removing photoresist and/or etching residue from a substrate and use thereof
KR101238471B1 (ko) 2005-02-25 2013-03-04 이케이씨 테크놀로지, 인코포레이티드 구리 및 저 ｋ 유전체 물질을 갖는 기판으로부터 레지스트,에칭 잔류물 및 구리 산화물을 제거하는 방법
US7700533B2 (en) * 2005-06-23 2010-04-20 Air Products And Chemicals, Inc. Composition for removal of residue comprising cationic salts and methods using same
US7674755B2 (en) * 2005-12-22 2010-03-09 Air Products And Chemicals, Inc. Formulation for removal of photoresist, etch residue and BARC
US8288330B2 (en) * 2006-05-26 2012-10-16 Air Products And Chemicals, Inc. Composition and method for photoresist removal
US7687447B2 (en) * 2008-03-13 2010-03-30 Air Products And Chemicals, Inc. Semi-aqueous stripping and cleaning composition containing aminobenzenesulfonic acid

Also Published As

Publication number Publication date
ATE495546T1 (de) 2011-01-15
DE602005025830D1 (de) 2011-02-24
JP2006049860A (ja) 2006-02-16
EP1612858A2 (en) 2006-01-04
KR20060048757A (ko) 2006-05-18
US8440599B2 (en) 2013-05-14
EP1612858B1 (en) 2011-01-12
US20060014656A1 (en) 2006-01-19
JP4814356B2 (ja) 2011-11-16
CN1715389A (zh) 2006-01-04
EP1612858A3 (en) 2007-06-27
US20110311921A1 (en) 2011-12-22
US8030263B2 (en) 2011-10-04
IL169438A0 (en) 2009-02-11
KR100770624B1 (ko) 2007-10-29
JP2009224793A (ja) 2009-10-01
TWI274968B (en) 2007-03-01
TW200602817A (en) 2006-01-16
CN101857825A (zh) 2010-10-13
CN1715389B (zh) 2010-10-27
CN101857825B (zh) 2012-09-19

Similar Documents

Publication Publication Date Title
SG136966A1 (en) Composition for stripping and cleaning and use thereof
TW200710205A (en) Dense fluid compositions for removal of hardened photoresist, post-etch residue and/or bottom anti-reflective coating layers
MY127401A (en) Low surface tension, low viscosity, aqueous, acidic compositions containing fluoride and organic, polar solvents for removal of photoresist and organic and inorganic etch residues at room temperature
SG136954A1 (en) Composition for removing photoresist and/or etching residue from a substrate and use thereof
SG168509A1 (en) Semi-aqueous stripping and cleaning formulation for metal substrate and methods for using same
TW200420755A (en) Compositions for removing etching residue and use thereof
TW200630482A (en) Aqueous based residue removers comprising fluoride
TW200745327A (en) Cleaner composition for removal of lead-free soldering flux, rinsing agent for removal of lead-free soldering flux, and method for removal of lead-free soldering flux
TW200509237A (en) Compositions suitable for removing photoresist, photoresist byproducts and etching residue, and use thereof
TW200940706A (en) Methods of cleaning semiconductor devices at the back end of line using amidoxime compositions
MY146827A (en) Aqueous cleaning composition for removing residues and method using same
WO2005057281A3 (en) Resist, barc and gap fill material stripping chemical and method
TW200718775A (en) Composition and method for removing thick film photoresist
TW200708597A (en) Metal and dielectric compatible sacrificial anti-reflective coating cleaning and removal composition
HK1078102A1 (en) Aqueous stripping and cleaning composition
TW200942609A (en) Compositions for removal of metal hard mask etching residues from a semiconductor substrate
ATE405622T1 (de) Wässrige phosphorsäurezusammensetzung zur reinigung von halbleiter-vorrichtungen
ATE331020T1 (de) Zusammensetzungen zur reinigung und entfernung von organischen sowie plasmaätzrückständen auf halbleitervorrichtungen
HK1047063A1 (zh) 用於半導體器件的清洗有機和等離子蝕刻的殘渣的內酰胺組合物
ATE502100T1 (de) Abstreifer mit acetal oder ketal zur entfernung nach einem ätzvorgang verbleibenden photoresists, ätzpolymers und sonstiger reste
AU2003284932A1 (en) Supercritical carbon dioxide/chemical formulation for ashed and unashed aluminum post-etch residue removal
TW200702435A (en) Phosphonic acid-containing formulation for cleaning semiconductor wafer and cleaning method
SG131867A1 (en) Aqueous cleaning composition and method for using same
DE60328014D1 (de) Nicht korrodierende reinigungsmittel zur entfernung von ätzmittelrückständen
SG152961A1 (en) Flouride-containing photoresist stripper or residue removing cleaning compositions containing conjugate oligomeric or polymeric material of alpha-hydroxycarbonyl compound/amine or ammonia reaction