SG135032A1 - Structure of image sensor module and method for manufacturing of wafer level package - Google Patents

Structure of image sensor module and method for manufacturing of wafer level package

Info

Publication number
SG135032A1
SG135032A1 SG200403032-6A SG2004030326A SG135032A1 SG 135032 A1 SG135032 A1 SG 135032A1 SG 2004030326 A SG2004030326 A SG 2004030326A SG 135032 A1 SG135032 A1 SG 135032A1
Authority
SG
Singapore
Prior art keywords
image sensor
manufacturing
sensor module
wafer level
level package
Prior art date
Application number
SG200403032-6A
Other languages
English (en)
Inventor
Wen-Kun Yang
Wen-Pin Yang
Shih-Li Chen
Original Assignee
Advanced Chip Eng Tech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Chip Eng Tech Inc filed Critical Advanced Chip Eng Tech Inc
Publication of SG135032A1 publication Critical patent/SG135032A1/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14683Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14687Wafer level processing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14618Containers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14625Optical elements or arrangements associated with the device
    • H01L27/14627Microlenses
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14632Wafer-level processed structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14683Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685Process for coatings or optical elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0203Containers; Encapsulations, e.g. encapsulation of photodiodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0232Optical elements or arrangements associated with the device
    • H01L31/02325Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/561Batch processing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04105Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/12105Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/20Structure, shape, material or disposition of high density interconnect preforms
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/20Structure, shape, material or disposition of high density interconnect preforms
    • H01L2224/21Structure, shape, material or disposition of high density interconnect preforms of an individual HDI interconnect
    • H01L2224/211Disposition
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/241Disposition
    • H01L2224/24135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/24137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32135Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73267Layer and HDI connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/8385Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855Hardening the adhesive by curing, i.e. thermosetting
    • H01L2224/83874Ultraviolet [UV] curing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92Specific sequence of method steps
    • H01L2224/922Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222Sequential connecting processes
    • H01L2224/92242Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92244Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a build-up interconnect
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93Batch processes
    • H01L2224/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14625Optical elements or arrangements associated with the device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01068Erbium [Er]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01077Iridium [Ir]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701Low temperature co-fired ceramic [LTCC]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/102Material of the semiconductor or solid state bodies
    • H01L2924/1025Semiconducting materials
    • H01L2924/10251Elemental semiconductors, i.e. Group IV
    • H01L2924/10253Silicon [Si]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/156Material
    • H01L2924/15786Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15788Glasses, e.g. amorphous oxides, nitrides or fluorides
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/18Printed circuits structurally associated with non-printed electric components
    • H05K1/189Printed circuits structurally associated with non-printed electric components characterised by the use of a flexible or folded printed circuit

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Studio Devices (AREA)
SG200403032-6A 2004-04-28 2004-05-28 Structure of image sensor module and method for manufacturing of wafer level package SG135032A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/833,345 US7061106B2 (en) 2004-04-28 2004-04-28 Structure of image sensor module and a method for manufacturing of wafer level package

Publications (1)

Publication Number Publication Date
SG135032A1 true SG135032A1 (en) 2007-09-28

Family

ID=35186207

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200403032-6A SG135032A1 (en) 2004-04-28 2004-05-28 Structure of image sensor module and method for manufacturing of wafer level package

Country Status (7)

Country Link
US (3) US7061106B2 (de)
JP (1) JP2005317887A (de)
KR (1) KR100600304B1 (de)
CN (1) CN100377361C (de)
DE (2) DE102004064028B4 (de)
SG (1) SG135032A1 (de)
TW (1) TWI240338B (de)

Families Citing this family (92)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100539234B1 (ko) * 2003-06-11 2005-12-27 삼성전자주식회사 투명 고분자 소재를 적용한 씨모스형 이미지 센서 모듈 및그 제조방법
DE10328265A1 (de) * 2003-06-23 2005-01-27 Infineon Technologies Ag Sensorbauteil und Nutzen zu seiner Herstellung
US7796187B2 (en) * 2004-02-20 2010-09-14 Flextronics Ap Llc Wafer based camera module and method of manufacture
US7872686B2 (en) * 2004-02-20 2011-01-18 Flextronics International Usa, Inc. Integrated lens and chip assembly for a digital camera
TWI253700B (en) * 2004-08-03 2006-04-21 Ind Tech Res Inst Image sensor module packaging structure and method thereof
US7186587B2 (en) * 2004-09-20 2007-03-06 Advanced Semiconductor Engineering Singulation method used in image sensor packaging process and support for use therein
KR100630705B1 (ko) * 2004-10-20 2006-10-02 삼성전자주식회사 카메라 모듈 및 그 제조방법
TWM264775U (en) * 2004-10-21 2005-05-11 Chipmos Technologies Inc Image sensor with multi chip module
US7279782B2 (en) * 2005-01-05 2007-10-09 Advanced Chip Engineering Technology Inc. FBGA and COB package structure for image sensor
KR100735492B1 (ko) * 2005-11-23 2007-07-04 삼성전기주식회사 단차부를 갖는 인쇄회로기판을 이용한 카메라 모듈
TWI295081B (en) * 2006-01-12 2008-03-21 Touch Micro System Tech Method for wafer level package and fabricating cap structures
JP2007288755A (ja) * 2006-04-14 2007-11-01 Optopac Co Ltd カメラモジュール
US20070264424A1 (en) * 2006-05-12 2007-11-15 Nanoopto Corporation Lens arrays and methods of making the same
US8092102B2 (en) 2006-05-31 2012-01-10 Flextronics Ap Llc Camera module with premolded lens housing and method of manufacture
US7498646B2 (en) * 2006-07-19 2009-03-03 Advanced Chip Engineering Technology Inc. Structure of image sensor module and a method for manufacturing of wafer level package
FR2904144A1 (fr) * 2006-07-19 2008-01-25 St Microelectronics Rousset Procede de fabrication d'un wafer de semi-conducteur comprenant un filtre optique integre
KR101176545B1 (ko) * 2006-07-26 2012-08-28 삼성전자주식회사 마이크로 렌즈의 형성방법과 마이크로 렌즈를 포함한이미지 센서 및 그의 제조방법
US7569422B2 (en) 2006-08-11 2009-08-04 Megica Corporation Chip package and method for fabricating the same
US7459729B2 (en) * 2006-12-29 2008-12-02 Advanced Chip Engineering Technology, Inc. Semiconductor image device package with die receiving through-hole and method of the same
US20080136012A1 (en) * 2006-12-08 2008-06-12 Advanced Chip Engineering Technology Inc. Imagine sensor package and forming method of the same
US7566854B2 (en) * 2006-12-08 2009-07-28 Advanced Chip Engineering Technology Inc. Image sensor module
US7923823B2 (en) 2007-01-23 2011-04-12 Infineon Technologies Ag Semiconductor device with parylene coating
US8110906B2 (en) 2007-01-23 2012-02-07 Infineon Technologies Ag Semiconductor device including isolation layer
US20080197435A1 (en) * 2007-02-21 2008-08-21 Advanced Chip Engineering Technology Inc. Wafer level image sensor package with die receiving cavity and method of making the same
US20080211080A1 (en) * 2007-03-01 2008-09-04 Advanced Chip Engineering Technology Inc. Package structure to improve the reliability for WLP
US8093092B2 (en) * 2007-06-08 2012-01-10 Flextronics Ap, Llc Techniques for glass attachment in an image sensor package
TWI332790B (en) * 2007-06-13 2010-11-01 Ind Tech Res Inst Image sensor module with a three-dimensional dies-stacking structure
US20090032925A1 (en) * 2007-07-31 2009-02-05 England Luke G Packaging with a connection structure
TWI360207B (en) * 2007-10-22 2012-03-11 Advanced Semiconductor Eng Chip package structure and method of manufacturing
US8488046B2 (en) * 2007-12-27 2013-07-16 Digitaloptics Corporation Configurable tele wide module
US20090206431A1 (en) * 2008-02-20 2009-08-20 Micron Technology, Inc. Imager wafer level module and method of fabrication and use
TWI384916B (zh) * 2008-03-25 2013-02-01 Bruce C S Chou 具軟性電路板之微結構及其製造方法
US8048708B2 (en) * 2008-06-25 2011-11-01 Micron Technology, Inc. Method and apparatus providing an imager module with a permanent carrier
US8193632B2 (en) * 2008-08-06 2012-06-05 Industrial Technology Research Institute Three-dimensional conducting structure and method of fabricating the same
TWI387087B (zh) * 2008-08-06 2013-02-21 Ind Tech Res Inst 立體導通結構及其製造方法
US9299866B2 (en) 2010-12-30 2016-03-29 Zena Technologies, Inc. Nanowire array based solar energy harvesting device
US9082673B2 (en) 2009-10-05 2015-07-14 Zena Technologies, Inc. Passivated upstanding nanostructures and methods of making the same
US8274039B2 (en) 2008-11-13 2012-09-25 Zena Technologies, Inc. Vertical waveguides with various functionality on integrated circuits
US8735797B2 (en) 2009-12-08 2014-05-27 Zena Technologies, Inc. Nanowire photo-detector grown on a back-side illuminated image sensor
US8519379B2 (en) 2009-12-08 2013-08-27 Zena Technologies, Inc. Nanowire structured photodiode with a surrounding epitaxially grown P or N layer
US8229255B2 (en) * 2008-09-04 2012-07-24 Zena Technologies, Inc. Optical waveguides in image sensors
US8748799B2 (en) 2010-12-14 2014-06-10 Zena Technologies, Inc. Full color single pixel including doublet or quadruplet si nanowires for image sensors
US8269985B2 (en) 2009-05-26 2012-09-18 Zena Technologies, Inc. Determination of optimal diameters for nanowires
US9515218B2 (en) 2008-09-04 2016-12-06 Zena Technologies, Inc. Vertical pillar structured photovoltaic devices with mirrors and optical claddings
US8835831B2 (en) 2010-06-22 2014-09-16 Zena Technologies, Inc. Polarized light detecting device and fabrication methods of the same
US8546742B2 (en) 2009-06-04 2013-10-01 Zena Technologies, Inc. Array of nanowires in a single cavity with anti-reflective coating on substrate
US8791470B2 (en) 2009-10-05 2014-07-29 Zena Technologies, Inc. Nano structured LEDs
US8890271B2 (en) 2010-06-30 2014-11-18 Zena Technologies, Inc. Silicon nitride light pipes for image sensors
US8299472B2 (en) 2009-12-08 2012-10-30 Young-June Yu Active pixel sensor with nanowire structured photodetectors
US9478685B2 (en) 2014-06-23 2016-10-25 Zena Technologies, Inc. Vertical pillar structured infrared detector and fabrication method for the same
US8866065B2 (en) 2010-12-13 2014-10-21 Zena Technologies, Inc. Nanowire arrays comprising fluorescent nanowires
US9000353B2 (en) 2010-06-22 2015-04-07 President And Fellows Of Harvard College Light absorption and filtering properties of vertically oriented semiconductor nano wires
US8889455B2 (en) 2009-12-08 2014-11-18 Zena Technologies, Inc. Manufacturing nanowire photo-detector grown on a back-side illuminated image sensor
US9406709B2 (en) 2010-06-22 2016-08-02 President And Fellows Of Harvard College Methods for fabricating and using nanowires
US9343490B2 (en) 2013-08-09 2016-05-17 Zena Technologies, Inc. Nanowire structured color filter arrays and fabrication method of the same
US8232633B2 (en) * 2008-09-25 2012-07-31 King Dragon International Inc. Image sensor package with dual substrates and the method of the same
TWI456715B (zh) * 2009-06-19 2014-10-11 Advanced Semiconductor Eng 晶片封裝結構及其製造方法
TWI466259B (zh) * 2009-07-21 2014-12-21 Advanced Semiconductor Eng 半導體封裝件、其製造方法及重佈晶片封膠體的製造方法
TWI405306B (zh) * 2009-07-23 2013-08-11 Advanced Semiconductor Eng 半導體封裝件、其製造方法及重佈晶片封膠體
US20110084372A1 (en) * 2009-10-14 2011-04-14 Advanced Semiconductor Engineering, Inc. Package carrier, semiconductor package, and process for fabricating same
US8378466B2 (en) * 2009-11-19 2013-02-19 Advanced Semiconductor Engineering, Inc. Wafer-level semiconductor device packages with electromagnetic interference shielding
TWI497679B (zh) * 2009-11-27 2015-08-21 Advanced Semiconductor Eng 半導體封裝件及其製造方法
US8435837B2 (en) * 2009-12-15 2013-05-07 Silicon Storage Technology, Inc. Panel based lead frame packaging method and device
US8569894B2 (en) 2010-01-13 2013-10-29 Advanced Semiconductor Engineering, Inc. Semiconductor package with single sided substrate design and manufacturing methods thereof
US8372689B2 (en) * 2010-01-21 2013-02-12 Advanced Semiconductor Engineering, Inc. Wafer-level semiconductor device packages with three-dimensional fan-out and manufacturing methods thereof
US8320134B2 (en) * 2010-02-05 2012-11-27 Advanced Semiconductor Engineering, Inc. Embedded component substrate and manufacturing methods thereof
US8536672B2 (en) * 2010-03-19 2013-09-17 Xintec, Inc. Image sensor package and fabrication method thereof
TWI411075B (zh) 2010-03-22 2013-10-01 Advanced Semiconductor Eng 半導體封裝件及其製造方法
US8278746B2 (en) 2010-04-02 2012-10-02 Advanced Semiconductor Engineering, Inc. Semiconductor device packages including connecting elements
US8624374B2 (en) 2010-04-02 2014-01-07 Advanced Semiconductor Engineering, Inc. Semiconductor device packages with fan-out and with connecting elements for stacking and manufacturing methods thereof
US20110294237A1 (en) * 2010-05-27 2011-12-01 MOS Art Pack Corporation Packaging method of semiconductor device
TWI405279B (zh) * 2010-07-23 2013-08-11 Global Unichip Corp Packaging of semiconductor components
US8941222B2 (en) 2010-11-11 2015-01-27 Advanced Semiconductor Engineering Inc. Wafer level semiconductor package and manufacturing methods thereof
US9406658B2 (en) 2010-12-17 2016-08-02 Advanced Semiconductor Engineering, Inc. Embedded component device and manufacturing methods thereof
US9111949B2 (en) * 2012-04-09 2015-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and apparatus of wafer level package for heterogeneous integration technology
US9324755B2 (en) * 2014-05-05 2016-04-26 Semiconductor Components Industries, Llc Image sensors with reduced stack height
US10032725B2 (en) * 2015-02-26 2018-07-24 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and manufacturing method thereof
CN105023900A (zh) * 2015-08-11 2015-11-04 华天科技(昆山)电子有限公司 埋入硅基板扇出型封装结构及其制造方法
KR102619666B1 (ko) 2016-11-23 2023-12-29 삼성전자주식회사 이미지 센서 패키지
CN107396239B (zh) * 2017-06-06 2023-08-15 纽威仕微电子(无锡)有限公司 一种水听器及其封装工艺
US10267988B2 (en) 2017-06-30 2019-04-23 Taiwan Semiconductor Manufacturing Company, Ltd. Photonic package and method forming same
DE102017124815B4 (de) * 2017-06-30 2019-10-17 Taiwan Semiconductor Manufacturing Company, Ltd. Photonisches Package und Verfahren zu dessen Bildung
US10319768B2 (en) 2017-08-28 2019-06-11 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor scheme for optical and electrical improvement
CN107863363A (zh) * 2017-11-20 2018-03-30 苏州晶方半导体科技股份有限公司 芯片的封装结构及其制作方法
US11075242B2 (en) 2017-11-27 2021-07-27 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices for image sensing
US20190181116A1 (en) * 2017-12-11 2019-06-13 Semiconductor Components Industries, Llc Fan-out structure for semiconductor packages and related methods
KR102052804B1 (ko) 2017-12-15 2019-12-05 삼성전기주식회사 팬-아웃 센서 패키지
KR102016495B1 (ko) 2018-01-31 2019-10-21 삼성전기주식회사 팬-아웃 센서 패키지
US12062680B2 (en) * 2018-06-29 2024-08-13 Sony Semiconductor Solutions Corporation Solid-state imaging device, electronic apparatus, and method for producing solid-state imaging device
US10861895B2 (en) * 2018-11-20 2020-12-08 Ningbo Semiconductor International Corporation Image capturing assembly and packaging method thereof, lens module and electronic device
WO2020115813A1 (ja) * 2018-12-04 2020-06-11 オリンパス株式会社 半導体装置、内視鏡、および、半導体装置の製造方法
CN113572445B (zh) * 2021-09-23 2022-01-07 深圳新声半导体有限公司 滤波器芯片封装结构及用于滤波器芯片封装的方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6518656B1 (en) * 1999-10-19 2003-02-11 Sony Corporation Reduced thickness optical image pickup device with improved sealing and method of making same
US20040056971A1 (en) * 2002-09-23 2004-03-25 International Semiconductor Technology Ltd. Thin type camera module
US20040150740A1 (en) * 2003-01-30 2004-08-05 Hsin Chung Hsien Miniaturized image sensor module

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59596Y2 (ja) * 1975-03-14 1984-01-09 株式会社ニコン ロシウツケイノジユコウキ
US6297071B1 (en) * 1998-07-22 2001-10-02 Eastman Kodak Company Method of making planar image sensor color filter arrays
JP2000241696A (ja) * 1999-02-17 2000-09-08 Canon Inc 光学センサーパッケージの保持・取付け方法
US6171883B1 (en) * 1999-02-18 2001-01-09 Taiwan Semiconductor Manufacturing Company Image array optoelectronic microelectronic fabrication with enhanced optical stability and method for fabrication thereof
US6483101B1 (en) * 1999-12-08 2002-11-19 Amkor Technology, Inc. Molded image sensor package having lens holder
US6483030B1 (en) * 1999-12-08 2002-11-19 Amkor Technology, Inc. Snap lid image sensor package
JP2001313350A (ja) * 2000-04-28 2001-11-09 Sony Corp チップ状電子部品及びその製造方法、並びにその製造に用いる疑似ウエーハ及びその製造方法
JP2002134762A (ja) * 2000-10-19 2002-05-10 Shinko Electric Ind Co Ltd 光学装置及びその製造方法
JP2002299546A (ja) * 2001-04-04 2002-10-11 Sony Corp チップ状電子部品及びその製造方法、並びにその製造に用いる疑似ウエーハ及びその製造方法
CN1217416C (zh) * 2001-07-06 2005-08-31 联华电子股份有限公司 互补式金氧半图像感测器及其制造方法
US6770971B2 (en) * 2002-06-14 2004-08-03 Casio Computer Co., Ltd. Semiconductor device and method of fabricating the same
KR20040019650A (ko) * 2002-08-28 2004-03-06 삼성전기주식회사 내장형 카메라 모듈
US6808960B2 (en) * 2002-10-25 2004-10-26 Omni Vision International Holding Ltd Method for making and packaging image sensor die using protective coating
JP2004242166A (ja) * 2003-02-07 2004-08-26 Seiko Epson Corp 光モジュール及びその製造方法並びに電子機器
JP4510403B2 (ja) * 2003-05-08 2010-07-21 富士フイルム株式会社 カメラモジュール及びカメラモジュールの製造方法
US7253397B2 (en) * 2004-02-23 2007-08-07 Micron Technology, Inc. Packaged microelectronic imagers and methods of packaging microelectronic imagers
US20050236684A1 (en) * 2004-04-27 2005-10-27 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor packaging structure and method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6518656B1 (en) * 1999-10-19 2003-02-11 Sony Corporation Reduced thickness optical image pickup device with improved sealing and method of making same
US20040056971A1 (en) * 2002-09-23 2004-03-25 International Semiconductor Technology Ltd. Thin type camera module
US20040150740A1 (en) * 2003-01-30 2004-08-05 Hsin Chung Hsien Miniaturized image sensor module

Also Published As

Publication number Publication date
US7061106B2 (en) 2006-06-13
US7525139B2 (en) 2009-04-28
US7501310B2 (en) 2009-03-10
DE102004034397A1 (de) 2005-12-01
US20050242409A1 (en) 2005-11-03
JP2005317887A (ja) 2005-11-10
US20050242408A1 (en) 2005-11-03
DE102004034397B4 (de) 2006-11-16
US20080108168A1 (en) 2008-05-08
KR100600304B1 (ko) 2006-07-13
CN100377361C (zh) 2008-03-26
DE102004064028B4 (de) 2009-04-02
KR20050105424A (ko) 2005-11-04
CN1691343A (zh) 2005-11-02
TWI240338B (en) 2005-09-21
TW200536025A (en) 2005-11-01

Similar Documents

Publication Publication Date Title
SG135032A1 (en) Structure of image sensor module and method for manufacturing of wafer level package
US8876304B2 (en) Imaging assembly
US7675131B2 (en) Flip-chip image sensor packages and methods of fabricating the same
US7521657B2 (en) Assembly having wafer with image sensor chips, a photo-sensitive adhesive pattern and plate thereof and method of manufacturing the same
EP2393116B1 (de) Waferlevel-Bildsensorverpackungsstruktur und Herstellungsverfahren dafür
CN105742301B (zh) 嵌入式图像传感器封装及其制造方法
TWI265601B (en) Method for making and packaging image sensor die using protective coating
SG143242A1 (en) Imagine sensor package and forming method of the same
TW200620463A (en) Optical enhancement of integrated circuit photodetectors
TW200725709A (en) Semiconductor apparatus and making method thereof
TW200731518A (en) Semiconductor device and manufacturing method of the same
SG144128A1 (en) Semiconductor image device package with die receiving through-hole and method of the same
TW200607028A (en) Image sensor module packaging structure and method thereof
WO2008133943A8 (en) Small form factor modules using wafer level optics with bottom cavity and flip chip assembly
TW200725859A (en) Structure and method for packaging a chip
TW200639990A (en) CIS package and method thereof
EP3762970B1 (de) Verfahren auf wafer-ebene zur herstellung von optoelektronischen modulen
US20150206916A1 (en) Semiconductor device and manufacturing method thereof
WO2008053849A1 (fr) Périphérique d'imagerie à l'état condensécondensé et procédé de fabrication correspondant
TW200727501A (en) Image sensor module and method for manufacturing the same
TW200603374A (en) Semiconductor device and method of manufacturing the same
TW201015673A (en) Image sensor device and the encapsulant module thereof
TW200610141A (en) Cmos image sensor and method for fabricating the same
CN101366118B (zh) 固体摄像器件及其制造方法
TWI265609B (en) Image sensor packaging structure and method