SG131007A1 - Pvd target with end of service life detection capability - Google Patents

Pvd target with end of service life detection capability

Info

Publication number
SG131007A1
SG131007A1 SG200605239-3A SG2006052393A SG131007A1 SG 131007 A1 SG131007 A1 SG 131007A1 SG 2006052393 A SG2006052393 A SG 2006052393A SG 131007 A1 SG131007 A1 SG 131007A1
Authority
SG
Singapore
Prior art keywords
service life
pvd target
detection capability
life detection
target structure
Prior art date
Application number
SG200605239-3A
Other languages
English (en)
Inventor
Yi-Li Hsiao
Jerry Hwang
Jyh-Cherng Sheu
Lawrance Sheu
Jean Wang
Chen-Hua Yu
Original Assignee
Taiwan Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg filed Critical Taiwan Semiconductor Mfg
Publication of SG131007A1 publication Critical patent/SG131007A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3476—Testing and control
    • H01J37/3479—Detecting exhaustion of target material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3476—Testing and control
    • H01J37/3482—Detecting or avoiding eroding through

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Continuous Casting (AREA)
  • Metal Rolling (AREA)
SG200605239-3A 2005-09-26 2006-08-03 Pvd target with end of service life detection capability SG131007A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US72039005P 2005-09-26 2005-09-26
US72872405P 2005-10-20 2005-10-20
US11/427,602 US8795486B2 (en) 2005-09-26 2006-06-29 PVD target with end of service life detection capability

Publications (1)

Publication Number Publication Date
SG131007A1 true SG131007A1 (en) 2007-04-26

Family

ID=37892520

Family Applications (2)

Application Number Title Priority Date Filing Date
SG200605239-3A SG131007A1 (en) 2005-09-26 2006-08-03 Pvd target with end of service life detection capability
SG200908721-4A SG158845A1 (en) 2005-09-26 2006-08-03 Pvd target with end of service life detection capability

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG200908721-4A SG158845A1 (en) 2005-09-26 2006-08-03 Pvd target with end of service life detection capability

Country Status (5)

Country Link
US (1) US8795486B2 (ja)
JP (2) JP2007113115A (ja)
KR (1) KR100826261B1 (ja)
SG (2) SG131007A1 (ja)
TW (1) TWI365918B (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7891536B2 (en) 2005-09-26 2011-02-22 Taiwan Semiconductor Manufacturing Co., Ltd. PVD target with end of service life detection capability
US20070068796A1 (en) * 2005-09-26 2007-03-29 Taiwan Semiconductor Manufacturing Co., Ltd. Method of using a target having end of service life detection capability
JP2013185230A (ja) * 2012-03-09 2013-09-19 Solar Applied Materials Technology Corp アラーム機能を有するスパッタリングターゲット
US10060023B2 (en) 2012-10-19 2018-08-28 Infineon Technologies Ag Backing plate for a sputter target, sputter target, and sputter device

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4324631A (en) 1979-07-23 1982-04-13 Spin Physics, Inc. Magnetron sputtering of magnetic materials
EP0046154B1 (en) 1980-08-08 1984-11-28 Battelle Development Corporation Apparatus for coating substrates by high-rate cathodic sputtering, as well as sputtering cathode for such apparatus
US4336119A (en) 1981-01-29 1982-06-22 Ppg Industries, Inc. Method of and apparatus for control of reactive sputtering deposition
US4545882A (en) 1983-09-02 1985-10-08 Shatterproof Glass Corporation Method and apparatus for detecting sputtering target depletion
DE3630737C1 (de) * 1986-09-10 1987-11-05 Philips & Du Pont Optical Kathodenzerstaeubungseinrichtung mit einer Vorrichtung zur Messung eines kritischen Target-Abtrages
CH669609A5 (ja) 1986-12-23 1989-03-31 Balzers Hochvakuum
WO1990010947A1 (de) 1989-03-15 1990-09-20 Balzers Aktiengesellschaft Verfahren zur detektion des erreichens einer vorgebbaren tiefe der targetkörpererosion sowie targetkörper hierfür
JPH0641744A (ja) 1992-05-26 1994-02-15 Hitachi Ltd スパッタ装置
JPH0688230A (ja) 1992-09-04 1994-03-29 Nippon Steel Corp スパッタリング装置
JPH06140383A (ja) 1992-10-27 1994-05-20 Nippon Steel Corp スパッタリング装置
JPH06212416A (ja) 1993-01-12 1994-08-02 Nippon Steel Corp スパッタリング装置
JPH06306593A (ja) 1993-04-16 1994-11-01 Nkk Corp スパッタリング装置
JPH08176808A (ja) 1993-04-28 1996-07-09 Japan Energy Corp 寿命警報機能を備えたスパッタリングタ−ゲット
JPH0754140A (ja) 1993-08-19 1995-02-28 Matsushita Electron Corp スパッタリング装置
JPH07292472A (ja) 1994-04-21 1995-11-07 Sharp Corp スパッタ装置のターゲット減肉量検出方法及びその装置
JP3504743B2 (ja) 1994-09-30 2004-03-08 日本電産株式会社 スピンドルモータ
JP3660013B2 (ja) 1995-03-31 2005-06-15 株式会社テクノファイン スパッタ用ターゲット
JPH1025571A (ja) 1996-07-09 1998-01-27 Sony Corp スパッタ用ターゲット及びその製造方法
US6323055B1 (en) * 1998-05-27 2001-11-27 The Alta Group, Inc. Tantalum sputtering target and method of manufacture
US6136164A (en) 1998-07-15 2000-10-24 United Microelectronics Corp. Apparatus for detecting position of collimator in sputtering processing chamber
US6156164A (en) 1999-06-22 2000-12-05 Tokyo Electron Limited Virtual shutter method and apparatus for preventing damage to gallium arsenide substrates during processing
US6423161B1 (en) 1999-10-15 2002-07-23 Honeywell International Inc. High purity aluminum materials
CN1425196A (zh) 1999-11-24 2003-06-18 霍尼韦尔国际公司 导电互连
US6780794B2 (en) 2000-01-20 2004-08-24 Honeywell International Inc. Methods of bonding physical vapor deposition target materials to backing plate materials
WO2002014571A2 (en) 2000-08-17 2002-02-21 Tosoh Smd, Inc. High purity sputter targets with target end-of-life indication and method of manufacture
JP2004527650A (ja) 2000-10-12 2004-09-09 ハネウェル・インターナショナル・インコーポレーテッド スパッタリングターゲット材の製造方法
US6503380B1 (en) 2000-10-13 2003-01-07 Honeywell International Inc. Physical vapor target constructions
US6638402B2 (en) 2001-06-05 2003-10-28 Praxair S.T. Technology, Inc. Ring-type sputtering target
WO2003027785A1 (fr) 2001-09-21 2003-04-03 Olympus Corporation Dispositif de gestion en mode de traitement par lots
JP4057287B2 (ja) * 2001-11-30 2008-03-05 日鉱金属株式会社 エロージョンプロファイルターゲットの製造方法
EP1513963A1 (en) * 2002-06-14 2005-03-16 Tosoh Smd, Inc. Target and method of diffusion bonding target to backing plate
US6811657B2 (en) 2003-01-27 2004-11-02 Micron Technology, Inc. Device for measuring the profile of a metal film sputter deposition target, and system and method employing same
TW200506080A (en) 2003-02-25 2005-02-16 Cabot Corp Method of forming sputtering target assembly and assemblies made therefrom
JP2004299134A (ja) 2003-03-28 2004-10-28 Toshiba Mach Co Ltd 射出成形機における材料供給装置及び射出成形機
US20070068796A1 (en) 2005-09-26 2007-03-29 Taiwan Semiconductor Manufacturing Co., Ltd. Method of using a target having end of service life detection capability
US7891536B2 (en) 2005-09-26 2011-02-22 Taiwan Semiconductor Manufacturing Co., Ltd. PVD target with end of service life detection capability

Also Published As

Publication number Publication date
TWI365918B (en) 2012-06-11
KR20070034955A (ko) 2007-03-29
US8795486B2 (en) 2014-08-05
JP2007113115A (ja) 2007-05-10
KR100826261B1 (ko) 2008-04-29
JP5399339B2 (ja) 2014-01-29
TW200712242A (en) 2007-04-01
SG158845A1 (en) 2010-02-26
US20070068803A1 (en) 2007-03-29
JP2010270401A (ja) 2010-12-02

Similar Documents

Publication Publication Date Title
SG131006A1 (en) Pvd target with end of service life detection capability
EP2160260A4 (en) CUTTING INSERT WITH WEAR-RESISTANT COATING STRUCTURE HAVING WEAR INDICATION AND METHOD FOR MANUFACTURING THE SAME
PL1913624T3 (pl) Tarcza do rozpylania z powolnie rozpylaną warstwą pod materiałem tarczy
UA108472C2 (en) Method of obtaining plasma sputtering target
MX2008011003A (es) Material compuesto de metal-aerogel.
TW200703718A (en) Luminescence-conversion LED
DE60142299D1 (de) Hochreiner sputtering targets mit indikator zur anzeige des endes der nutzungsdauerfür target und herstellungsverfahren dafür
MY156201A (en) Ferromagnetic sputtering target and method for manufacturing same
TW200723939A (en) Getter systems comprising one or more deposits of getter material and a layer of material for the transport of H2O
SG149811A1 (en) Plasma-resistant ceramics with controlled electrical resistivity
SG131007A1 (en) Pvd target with end of service life detection capability
TW200706675A (en) Tube cathode for use in sputter processes
HK1142671A1 (en) Flow sensor with moveable magnet
EP2049735A4 (en) ENHANCED DETECTABLE WARNING AND GUIDE TILES
WO2007118187A3 (en) Spark plug
BRPI0912229A2 (pt) mistura para remoção de oxigênio, composição, artigo, mistura padrão, e, uso de uma mistura
MY151123A (en) Solution and process for increasing the solderability and corrosion resistance of metal or metal alloy surface
ATE478163T1 (de) Verschleissfeste materialien
EP1889950A3 (en) Anti-corrosion cathodic protection device with sacrificial anode
DE60320375D1 (de) Nichtstöchiometrisches niox-keramik-target
WO2007082181A3 (en) Methods of modulating cell surface receptors to prevent or reduce inflammation
TW200702467A (en) Enhanced magnetron sputtering target
IL192414A (en) METHOD FOR IDENTIFYING POLYPTIDES WITH @ ring @ resembling @ b-box @ and such polypeptides @
GB2458141B (en) A wear indicator for a sacrificial anode and a sacrificial anode assembly comprising the same
BRPI0405016A (pt) Blocos de catodo para célula de eletrólise de alumìnio com mecanismo de detecção de desgaste