SG124407A1 - Method of generating a photolithography patterningdevice, computer program, patterning device, meth od of determining the position of a target image on or proximate a substrate, measurement device, and lithographic apparatus - Google Patents
Method of generating a photolithography patterningdevice, computer program, patterning device, meth od of determining the position of a target image on or proximate a substrate, measurement device, and lithographic apparatusInfo
- Publication number
- SG124407A1 SG124407A1 SG200600565A SG200600565A SG124407A1 SG 124407 A1 SG124407 A1 SG 124407A1 SG 200600565 A SG200600565 A SG 200600565A SG 200600565 A SG200600565 A SG 200600565A SG 124407 A1 SG124407 A1 SG 124407A1
- Authority
- SG
- Singapore
- Prior art keywords
- features
- substrate
- target image
- patterning device
- proximate
- Prior art date
Links
- 238000000059 patterning Methods 0.000 title abstract 5
- 239000000758 substrate Substances 0.000 title abstract 5
- 238000005259 measurement Methods 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- 238000000206 photolithography Methods 0.000 title abstract 2
- 238000004590 computer program Methods 0.000 title 1
- MYWUZJCMWCOHBA-VIFPVBQESA-N methamphetamine Chemical compound CN[C@@H](C)CC1=CC=CC=C1 MYWUZJCMWCOHBA-VIFPVBQESA-N 0.000 title 1
- 230000002596 correlated effect Effects 0.000 abstract 2
- 238000006073 displacement reaction Methods 0.000 abstract 2
- 230000005855 radiation Effects 0.000 abstract 2
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70653—Metrology techniques
- G03F7/70666—Aerial image, i.e. measuring the image of the patterned exposure light at the image plane of the projection system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Multimedia (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US64907905P | 2005-02-03 | 2005-02-03 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG124407A1 true SG124407A1 (en) | 2006-08-30 |
Family
ID=36274132
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200600565A SG124407A1 (en) | 2005-02-03 | 2006-01-26 | Method of generating a photolithography patterningdevice, computer program, patterning device, meth od of determining the position of a target image on or proximate a substrate, measurement device, and lithographic apparatus |
Country Status (7)
Country | Link |
---|---|
US (1) | US7960074B2 (ja) |
EP (1) | EP1688794A3 (ja) |
JP (1) | JP4566137B2 (ja) |
KR (2) | KR100795504B1 (ja) |
CN (1) | CN100582947C (ja) |
SG (1) | SG124407A1 (ja) |
TW (1) | TWI348076B (ja) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1962138B1 (en) | 2007-02-23 | 2011-12-14 | Imec | Systems and methods for UV lithography |
US8230369B2 (en) | 2008-02-27 | 2012-07-24 | Kabushiki Kaisha Toshiba | Simulation method and simulation program |
JP2009204823A (ja) * | 2008-02-27 | 2009-09-10 | Toshiba Corp | シミュレーション方法及びシミュレーション用のプログラム |
JP4922338B2 (ja) * | 2008-04-25 | 2012-04-25 | エーエスエムエル ネザーランズ ビー.ブイ. | 位置制御システム、リソグラフィ装置、および可動オブジェクトの位置を制御する方法 |
US8139231B2 (en) * | 2008-05-01 | 2012-03-20 | Cognex Corporation | Machine vision technique for manufacturing semiconductor wafers |
US8570516B2 (en) * | 2008-09-12 | 2013-10-29 | Cognex Corporation | Infrared direct illumination machine vision technique for semiconductor processing equipment |
US8189194B2 (en) * | 2008-09-12 | 2012-05-29 | Cognex Corporation | Direct illumination machine vision technique for processing semiconductor wafers |
NL2004735A (en) | 2009-07-06 | 2011-01-10 | Asml Netherlands Bv | Imprint lithography apparatus and method. |
CN102939565B (zh) * | 2010-02-26 | 2015-08-05 | 密克罗尼克麦达塔公司 | 用于执行与管芯的图案对准的方法和装置 |
NL2006454A (en) * | 2010-05-03 | 2011-11-07 | Asml Netherlands Bv | Imprint lithography method and apparatus. |
CN102331687B (zh) * | 2011-10-21 | 2013-07-17 | 苏州大学 | 一种步进式光学加工系统和加工方法 |
JP2013115304A (ja) * | 2011-11-30 | 2013-06-10 | Nuflare Technology Inc | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
CN102654734B (zh) * | 2012-04-06 | 2014-06-04 | 北京理工大学 | 双吸收层交替相移l/s掩模锥形衍射场的计算方法 |
JP2015518659A (ja) * | 2012-04-19 | 2015-07-02 | エーエスエムエル ネザーランズ ビー.ブイ. | 基板ホルダ、リソグラフィ装置及びデバイス製造方法 |
US9811002B2 (en) | 2013-07-19 | 2017-11-07 | Asml Netherlands B.V. | Determination and application of non-monotonic dose sensitivity |
CN104749901B (zh) * | 2013-12-31 | 2017-08-29 | 上海微电子装备有限公司 | 一种调焦调平装置 |
KR102246876B1 (ko) * | 2014-10-22 | 2021-04-30 | 삼성전자 주식회사 | 극자외선 리소그래피 장치용 반사형 마스크 및 그 제조방법 |
JP6590599B2 (ja) * | 2014-11-28 | 2019-10-16 | キヤノン株式会社 | 位置決定装置、位置決定方法、リソグラフィ装置、および物品の製造方法 |
US9841299B2 (en) | 2014-11-28 | 2017-12-12 | Canon Kabushiki Kaisha | Position determining device, position determining method, lithographic apparatus, and method for manufacturing object |
WO2016162228A1 (en) * | 2015-04-10 | 2016-10-13 | Asml Netherlands B.V. | Method and apparatus for inspection and metrology |
US10185800B2 (en) * | 2016-06-27 | 2019-01-22 | Kla-Tencor Corporation | Apparatus and method for the measurement of pattern placement and size of pattern and computer program therefor |
US11035980B2 (en) * | 2018-07-24 | 2021-06-15 | Faro Technologies, Inc. | Laser scanner with projector |
JP7320832B2 (ja) | 2019-08-08 | 2023-08-04 | 株式会社日本アレフ | 固定構造 |
Family Cites Families (25)
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US4329410A (en) * | 1979-12-26 | 1982-05-11 | The Perkin-Elmer Corporation | Production of X-ray lithograph masks |
JP2545905B2 (ja) * | 1987-12-29 | 1996-10-23 | キヤノン株式会社 | 反射型マスクならびにこれを用いた露光方法 |
JPH06120125A (ja) * | 1991-11-12 | 1994-04-28 | Hitachi Ltd | 光学素子およびそれを用いた投影露光装置 |
JPH0766111A (ja) * | 1993-08-31 | 1995-03-10 | Canon Inc | 露光装置および露光方法 |
JP3570728B2 (ja) * | 1997-03-07 | 2004-09-29 | アーエスエム リソグラフィ ベスローテン フェンノートシャップ | 離軸整列ユニットを持つリトグラフ投射装置 |
NL1008352C2 (nl) * | 1998-02-19 | 1999-08-20 | Stichting Tech Wetenschapp | Inrichting, geschikt voor extreem ultraviolet lithografie, omvattende een stralingsbron en een verwerkingsorgaan voor het verwerken van de van de stralingsbron afkomstige straling, alsmede een filter voor het onderdrukken van ongewenste atomaire en microscopische deeltjes welke door een stralingsbron zijn uitgezonden. |
AU2549899A (en) | 1998-03-02 | 1999-09-20 | Nikon Corporation | Method and apparatus for exposure, method of manufacture of exposure tool, device, and method of manufacture of device |
AU5932500A (en) * | 1999-07-22 | 2001-02-13 | Corning Incorporated | Extreme ultraviolet soft x-ray projection lithographic method and mask devices |
US6387572B1 (en) * | 1999-09-13 | 2002-05-14 | Intel Corporation | Low CTE substrate for reflective EUV lithography |
US6614505B2 (en) * | 2001-01-10 | 2003-09-02 | Asml Netherlands B.V. | Lithographic projection apparatus, device manufacturing method, and device manufactured thereby |
JP4390418B2 (ja) * | 2001-02-14 | 2009-12-24 | Hoya株式会社 | Euv露光用反射型マスクブランクおよびeuv露光用反射型マスク並びに半導体の製造方法 |
JP2003059827A (ja) * | 2001-06-20 | 2003-02-28 | Asml Netherlands Bv | デバイスを製造する方法、この方法によって製造したデバイス、およびこの方法で使用するマスク |
DE10134231B4 (de) | 2001-07-13 | 2006-06-14 | Infineon Technologies Ag | EUV-Reflektionsmaske |
US6607862B2 (en) * | 2001-08-24 | 2003-08-19 | Intel Corporation | Damascene extreme ultraviolet lithography alternative phase shift photomask and method of making |
JP3989367B2 (ja) * | 2002-02-22 | 2007-10-10 | Hoya株式会社 | 露光用反射型マスクブランク、その製造方法及び露光用反射型マスク |
JP4100038B2 (ja) * | 2002-05-10 | 2008-06-11 | ソニー株式会社 | 露光方法および露光装置 |
US7129010B2 (en) * | 2002-08-02 | 2006-10-31 | Schott Ag | Substrates for in particular microlithography |
EP1434099B1 (en) | 2002-11-28 | 2008-07-02 | ASML Netherlands B.V. | Device manufacturing method |
US7042550B2 (en) * | 2002-11-28 | 2006-05-09 | Asml Netherlands B.V. | Device manufacturing method and computer program |
JP2004186613A (ja) * | 2002-12-06 | 2004-07-02 | Nikon Corp | Euv露光方法、マスク及び半導体装置の製造方法 |
DE10302342A1 (de) * | 2003-01-17 | 2004-08-05 | Schott Glas | Substrat für die EUV-Mikrolithographie und Herstellverfahren hierfür |
JP3910546B2 (ja) * | 2003-02-21 | 2007-04-25 | 株式会社東芝 | リソグラフィシミュレーション方法、マスクパターン補正方法及び処理基板形状補正方法 |
US6806007B1 (en) | 2003-05-02 | 2004-10-19 | Advanced Micro Devices, Inc. | EUV mask which facilitates electro-static chucking |
JP2005340493A (ja) * | 2004-05-27 | 2005-12-08 | Sony Corp | マスクパターン補正方法、露光用マスクおよびマスク製造方法 |
US7094507B2 (en) * | 2004-10-29 | 2006-08-22 | Infineon Technologies Ag | Method for determining an optimal absorber stack geometry of a lithographic reflection mask |
-
2006
- 2006-01-26 SG SG200600565A patent/SG124407A1/en unknown
- 2006-01-27 TW TW095103306A patent/TWI348076B/zh active
- 2006-02-01 CN CN200610073977A patent/CN100582947C/zh active Active
- 2006-02-02 EP EP06101178A patent/EP1688794A3/en not_active Withdrawn
- 2006-02-02 JP JP2006025174A patent/JP4566137B2/ja active Active
- 2006-02-02 KR KR1020060010091A patent/KR100795504B1/ko active IP Right Grant
- 2006-02-02 US US11/345,629 patent/US7960074B2/en active Active
-
2007
- 2007-05-17 KR KR1020070048312A patent/KR100886741B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
KR100795504B1 (ko) | 2008-01-16 |
US20060194123A1 (en) | 2006-08-31 |
CN1904737A (zh) | 2007-01-31 |
KR20070058411A (ko) | 2007-06-08 |
CN100582947C (zh) | 2010-01-20 |
EP1688794A2 (en) | 2006-08-09 |
KR100886741B1 (ko) | 2009-03-04 |
TW200632589A (en) | 2006-09-16 |
EP1688794A3 (en) | 2007-01-10 |
JP4566137B2 (ja) | 2010-10-20 |
TWI348076B (en) | 2011-09-01 |
US7960074B2 (en) | 2011-06-14 |
KR20060089153A (ko) | 2006-08-08 |
JP2006259699A (ja) | 2006-09-28 |
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