SG11202003653WA - Systems and methods for preventing stiction of high aspect ratio structures and/or repairing high aspect ratio structures - Google Patents

Systems and methods for preventing stiction of high aspect ratio structures and/or repairing high aspect ratio structures

Info

Publication number
SG11202003653WA
SG11202003653WA SG11202003653WA SG11202003653WA SG11202003653WA SG 11202003653W A SG11202003653W A SG 11202003653WA SG 11202003653W A SG11202003653W A SG 11202003653WA SG 11202003653W A SG11202003653W A SG 11202003653WA SG 11202003653W A SG11202003653W A SG 11202003653WA
Authority
SG
Singapore
Prior art keywords
aspect ratio
high aspect
ratio structures
systems
methods
Prior art date
Application number
SG11202003653WA
Other languages
English (en)
Inventor
Dries Dictus
Ta-Yu Lo
Original Assignee
Lam Res Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Ag filed Critical Lam Res Ag
Publication of SG11202003653WA publication Critical patent/SG11202003653WA/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B08B3/022—Cleaning travelling work
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto 
    • B08B9/08—Cleaning containers, e.g. tanks
    • B08B9/0804—Cleaning containers having tubular shape, e.g. casks, barrels, drums
    • B08B9/0813—Cleaning containers having tubular shape, e.g. casks, barrels, drums by the force of jets or sprays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02307—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Micromachines (AREA)
  • Aiming, Guidance, Guns With A Light Source, Armor, Camouflage, And Targets (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Drying Of Semiconductors (AREA)
SG11202003653WA 2017-10-23 2018-10-11 Systems and methods for preventing stiction of high aspect ratio structures and/or repairing high aspect ratio structures SG11202003653WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201762575705P 2017-10-23 2017-10-23
PCT/US2018/055436 WO2019083735A1 (en) 2017-10-23 2018-10-11 SYSTEMS AND METHODS FOR PREVENTING THE STATIC FRICTION OF HIGH-SHAPE RATIO STRUCTURES AND / OR REPAIRING HIGH-SHAPE RATIO STRUCTURES

Publications (1)

Publication Number Publication Date
SG11202003653WA true SG11202003653WA (en) 2020-05-28

Family

ID=66247965

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202003653WA SG11202003653WA (en) 2017-10-23 2018-10-11 Systems and methods for preventing stiction of high aspect ratio structures and/or repairing high aspect ratio structures

Country Status (8)

Country Link
US (1) US11854792B2 (ko)
EP (1) EP3701561A4 (ko)
JP (1) JP7412340B2 (ko)
KR (1) KR20200063242A (ko)
CN (1) CN111279454A (ko)
SG (1) SG11202003653WA (ko)
TW (1) TWI767074B (ko)
WO (1) WO2019083735A1 (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6875811B2 (ja) * 2016-09-16 2021-05-26 株式会社Ｓｃｒｅｅｎホールディングス パターン倒壊回復方法、基板処理方法および基板処理装置
CN112805808A (zh) 2018-10-03 2021-05-14 朗姆研究公司 预防高深宽比结构的黏滞和/或对其修补的含氟化氢、醇及添加剂的气体混合物
GB201820270D0 (en) 2018-12-12 2019-01-30 Lam Res Ag Method and apparatus for treating semiconductor substrate
JP2021022598A (ja) * 2019-07-24 2021-02-18 東京エレクトロン株式会社 基板処理方法、基板処理装置及び配線パターン形成システム
JP2022077982A (ja) 2020-11-12 2022-05-24 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法

Family Cites Families (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08213357A (ja) 1995-02-06 1996-08-20 Hitachi Ltd 基板の洗浄処理方法
JPH08316189A (ja) 1995-05-12 1996-11-29 Hitachi Ltd 基板の洗浄処理方法
US5489553A (en) * 1995-05-25 1996-02-06 Industrial Technology Research Institute HF vapor surface treatment for the 03 teos gap filling deposition
US5954911A (en) * 1995-10-12 1999-09-21 Semitool, Inc. Semiconductor processing using vapor mixtures
KR100238234B1 (ko) * 1997-03-20 2000-01-15 윤종용 반도체소자용 인-시튜 세정장치 및 그를 이용한 반도체 소자의 세정방법
US7404863B2 (en) * 1997-05-09 2008-07-29 Semitool, Inc. Methods of thinning a silicon wafer using HF and ozone
US6485531B1 (en) 1998-09-15 2002-11-26 Levitronix Llc Process chamber
US20020096196A1 (en) * 2001-01-23 2002-07-25 Takayuki Toshima Substrate processing apparatus and substrate processing method
KR100416592B1 (ko) * 2001-02-10 2004-02-05 삼성전자주식회사 매엽식 웨이퍼 세정 장치 및 이를 이용한 웨이퍼 세정 방법
US20020160606A1 (en) * 2001-02-14 2002-10-31 Siefering Kevin L. Method for material removal from an in-process microelectronic substrate
KR100445259B1 (ko) 2001-11-27 2004-08-21 삼성전자주식회사 세정방법 및 이를 수행하기 위한 세정 장치
US7279431B2 (en) * 2003-06-18 2007-10-09 Semitool, Inc. Vapor phase etching MEMS devices
JP2005191511A (ja) * 2003-12-02 2005-07-14 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
US20060042664A1 (en) * 2004-08-30 2006-03-02 Vishwas Hardikar Apparatus and method for removing a liquid from a rotating substrate surface
JP2006114884A (ja) * 2004-09-17 2006-04-27 Ebara Corp 基板洗浄処理装置及び基板処理ユニット
DE102004062355A1 (de) * 2004-12-23 2006-07-06 Siltronic Ag Verfahren zum Behandeln einer Halbleiterscheibe mit einem gasförmigen Medium sowie damit behandelte Halbleiterscheibe
US20060196527A1 (en) * 2005-02-23 2006-09-07 Tokyo Electron Limited Method of surface processing substrate, method of cleaning substrate, and programs for implementing the methods
JP4607755B2 (ja) * 2005-12-19 2011-01-05 東京エレクトロン株式会社 基板洗浄方法、基板洗浄装置、制御プログラム、およびコンピュータ読取可能な記憶媒体
WO2007072708A1 (ja) * 2005-12-22 2007-06-28 Tokyo Electron Limited 基板処理装置
JP4854317B2 (ja) * 2006-01-31 2012-01-18 東京エレクトロン株式会社 基板処理方法
JP2007227764A (ja) * 2006-02-24 2007-09-06 Dainippon Screen Mfg Co Ltd 基板表面処理装置、基板表面処理方法および基板処理装置
JP4176779B2 (ja) * 2006-03-29 2008-11-05 東京エレクトロン株式会社 基板処理方法，記録媒体及び基板処理装置
US20080053486A1 (en) * 2006-08-10 2008-03-06 Applied Materials, Inc. Semiconductor substrate cleaning apparatus
JP5023705B2 (ja) * 2007-01-10 2012-09-12 東京エレクトロン株式会社 半導体装置の製造方法、半導体製造装置及び記憶媒体
US7964042B2 (en) * 2007-07-30 2011-06-21 Dainippon Screen Mfg. Co., Ltd. Substrate processing apparatus and substrate processing method
US20100154826A1 (en) * 2008-12-19 2010-06-24 Tokyo Electron Limited System and Method For Rinse Optimization
US8440573B2 (en) 2010-01-26 2013-05-14 Lam Research Corporation Method and apparatus for pattern collapse free wet processing of semiconductor devices
US8617993B2 (en) 2010-02-01 2013-12-31 Lam Research Corporation Method of reducing pattern collapse in high aspect ratio nanostructures
WO2012027667A2 (en) 2010-08-27 2012-03-01 Advanced Technology Materials, Inc. Method for preventing the collapse of high aspect ratio structures during drying
US8926788B2 (en) 2010-10-27 2015-01-06 Lam Research Ag Closed chamber for wafer wet processing
KR101678266B1 (ko) * 2010-11-11 2016-11-21 도쿄엘렉트론가부시키가이샤 반도체 장치의 제조 방법 및 제조 장치
US9997379B2 (en) 2010-11-30 2018-06-12 Lam Research Ag Method and apparatus for wafer wet processing
KR101290527B1 (ko) 2011-05-31 2013-07-30 주식회사 테스 기판처리시스템 및 이를 이용한 기판처리방법
JP5958950B2 (ja) * 2011-07-13 2016-08-02 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
US9484229B2 (en) * 2011-11-14 2016-11-01 Lam Research Ag Device and method for processing wafer-shaped articles
JP5632860B2 (ja) * 2012-01-05 2014-11-26 東京エレクトロン株式会社 基板洗浄方法、基板洗浄装置及び基板洗浄用記憶媒体
KR20130118559A (ko) * 2012-04-20 2013-10-30 에스케이하이닉스 주식회사 반도체 소자 및 이의 제조 방법
US20140026926A1 (en) 2012-07-30 2014-01-30 Lam Research Ag Method and apparatus for liquid treatment of wafer-shaped articles
JP6317547B2 (ja) * 2012-08-28 2018-04-25 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法
JP2015056519A (ja) * 2013-09-12 2015-03-23 東京エレクトロン株式会社 エッチング方法、エッチング装置及び記憶媒体
JP6199155B2 (ja) * 2013-10-30 2017-09-20 株式会社Ｓｃｒｅｅｎホールディングス 犠牲膜除去方法および基板処理装置
JP6363876B2 (ja) * 2014-05-21 2018-07-25 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP6435667B2 (ja) 2014-07-01 2018-12-12 東京エレクトロン株式会社 エッチング方法、エッチング装置及び記憶媒体
US9460944B2 (en) * 2014-07-02 2016-10-04 SCREEN Holdings Co., Ltd. Substrate treating apparatus and method of treating substrate
JP6389089B2 (ja) * 2014-09-18 2018-09-12 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP6489524B2 (ja) * 2015-08-18 2019-03-27 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP6591280B2 (ja) * 2015-12-16 2019-10-16 東芝メモリ株式会社 基板処理装置および基板処理方法
JP6588819B2 (ja) * 2015-12-24 2019-10-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP6466315B2 (ja) 2015-12-25 2019-02-06 東京エレクトロン株式会社 基板処理方法及び基板処理システム
JP6624609B2 (ja) * 2016-02-15 2019-12-25 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP6722532B2 (ja) * 2016-07-19 2020-07-15 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および処理カップ洗浄方法
US10446416B2 (en) 2016-08-09 2019-10-15 Lam Research Ag Method and apparatus for processing wafer-shaped articles
JP6789038B2 (ja) * 2016-08-29 2020-11-25 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP6881922B2 (ja) * 2016-09-12 2021-06-02 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP6875811B2 (ja) 2016-09-16 2021-05-26 株式会社Ｓｃｒｅｅｎホールディングス パターン倒壊回復方法、基板処理方法および基板処理装置
JP6818484B2 (ja) * 2016-09-26 2021-01-20 株式会社Ｓｃｒｅｅｎホールディングス 基板洗浄方法、基板洗浄レシピ作成方法、および基板洗浄レシピ作成装置
JP6812284B2 (ja) * 2017-03-28 2021-01-13 東京エレクトロン株式会社 エッチング方法及び記録媒体
JP6811675B2 (ja) * 2017-04-28 2021-01-13 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP7109165B2 (ja) * 2017-05-30 2022-07-29 東京エレクトロン株式会社 エッチング方法
JP6938248B2 (ja) * 2017-07-04 2021-09-22 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
JP6914138B2 (ja) * 2017-07-26 2021-08-04 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法及び基板処理装置
JP7116534B2 (ja) * 2017-09-21 2022-08-10 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置

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US11854792B2 (en) 2023-12-26
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