SG11201810128WA - Charge mirror-based sensing for ferroelectric memory - Google Patents
Charge mirror-based sensing for ferroelectric memoryInfo
- Publication number
- SG11201810128WA SG11201810128WA SG11201810128WA SG11201810128WA SG11201810128WA SG 11201810128W A SG11201810128W A SG 11201810128WA SG 11201810128W A SG11201810128W A SG 11201810128WA SG 11201810128W A SG11201810128W A SG 11201810128WA SG 11201810128W A SG11201810128W A SG 11201810128WA
- Authority
- SG
- Singapore
- Prior art keywords
- international
- charge
- boise
- idaho
- pct
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2273—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2275—Writing or programming circuits or methods
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
- Dram (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/173,310 US9881661B2 (en) | 2016-06-03 | 2016-06-03 | Charge mirror-based sensing for ferroelectric memory |
PCT/US2017/029099 WO2017209858A1 (en) | 2016-06-03 | 2017-04-24 | Charge mirror-based sensing for ferroelectric memory |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201810128WA true SG11201810128WA (en) | 2018-12-28 |
Family
ID=60477787
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201810128WA SG11201810128WA (en) | 2016-06-03 | 2017-04-24 | Charge mirror-based sensing for ferroelectric memory |
Country Status (8)
Country | Link |
---|---|
US (5) | US9881661B2 (ja) |
EP (1) | EP3465690A4 (ja) |
JP (1) | JP6644175B2 (ja) |
KR (2) | KR102330193B1 (ja) |
CN (1) | CN109313919A (ja) |
SG (1) | SG11201810128WA (ja) |
TW (1) | TWI650750B (ja) |
WO (1) | WO2017209858A1 (ja) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10446502B2 (en) | 2017-08-30 | 2019-10-15 | Micron, Technology, Inc. | Apparatuses and methods for shielded memory architecture |
US10529410B2 (en) * | 2017-12-18 | 2020-01-07 | Micron Technology, Inc. | Techniques for accessing an array of memory cells to reduce parasitic coupling |
US10762944B2 (en) | 2017-12-18 | 2020-09-01 | Micron Technology, Inc. | Single plate configuration and memory array operation |
US10403336B2 (en) * | 2017-12-28 | 2019-09-03 | Micron Technology, Inc. | Techniques for precharging a memory cell |
US10867653B2 (en) | 2018-04-20 | 2020-12-15 | Micron Technology, Inc. | Access schemes for protecting stored data in a memory device |
US11127449B2 (en) | 2018-04-25 | 2021-09-21 | Micron Technology, Inc. | Sensing a memory cell |
US10607676B2 (en) * | 2018-04-25 | 2020-03-31 | Micron Technology, Inc. | Sensing a memory cell |
US10622050B2 (en) | 2018-05-09 | 2020-04-14 | Micron Technology, Inc. | Ferroelectric memory plate power reduction |
US11301320B2 (en) | 2020-04-03 | 2022-04-12 | Micron Technology, Inc. | Erasure decoding for a memory device |
EP3984035A4 (en) * | 2019-06-14 | 2023-06-28 | Micron Technology, Inc. | Memory management and erasure decoding for a memory device |
US10984847B2 (en) * | 2019-06-14 | 2021-04-20 | Micron Technology, Inc. | Memory management for charge leakage in a memory device |
US10867671B1 (en) | 2019-07-02 | 2020-12-15 | Micron Technology, Inc. | Techniques for applying multiple voltage pulses to select a memory cell |
US11144228B2 (en) * | 2019-07-11 | 2021-10-12 | Micron Technology, Inc. | Circuit partitioning for a memory device |
US11017831B2 (en) | 2019-07-15 | 2021-05-25 | Micron Technology, Inc. | Ferroelectric memory cell access |
US10998029B1 (en) * | 2020-01-17 | 2021-05-04 | Micron Technology, Inc. | Low voltage ferroelectric memory cell sensing |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2682802B1 (fr) * | 1991-10-18 | 1993-12-03 | Sgs Thomson Microelectronics Sa | Dispositif pour generer une tension de programmation d'une memoire permanente programmable, notamment de type eprom, procede et memoire s'y rapportant. |
US5579257A (en) * | 1995-08-31 | 1996-11-26 | Motorola, Inc. | Method for reading and restoring data in a data storage element |
US5677865A (en) | 1995-09-11 | 1997-10-14 | Micron Technology, Inc. | Ferroelectric memory using reference charge circuit |
FR2749967B1 (fr) * | 1996-06-13 | 1998-09-25 | Sgs Thomson Microelectronics | Dispositif de lecture de cellules d'une memoire |
KR100324594B1 (ko) | 1999-06-28 | 2002-02-16 | 박종섭 | 강유전체 메모리 장치 |
JP4049519B2 (ja) * | 2000-07-17 | 2008-02-20 | 松下電器産業株式会社 | 強誘電体記憶装置 |
US6584007B2 (en) * | 2000-12-29 | 2003-06-24 | Stmicroelectronics, Inc. | Circuit and method for testing a ferroelectric memory device |
US6529398B1 (en) | 2001-09-27 | 2003-03-04 | Intel Corporation | Ferroelectric memory and method for reading the same |
EP1304701A1 (en) * | 2001-10-18 | 2003-04-23 | STMicroelectronics S.r.l. | Sensing circuit for ferroelectric non-volatile memories |
US7215187B2 (en) * | 2004-07-23 | 2007-05-08 | The Hong Kong University Of Science And Technology | Symmetrically matched voltage mirror and applications therefor |
JP4064951B2 (ja) * | 2004-07-28 | 2008-03-19 | 株式会社東芝 | 強誘電体半導体記憶装置 |
GB0424501D0 (en) | 2004-11-05 | 2004-12-08 | Ricardo Uk Ltd | Co-simulation apparatus and method |
JP4083173B2 (ja) * | 2005-01-05 | 2008-04-30 | 富士通株式会社 | 半導体メモリ |
JP4993118B2 (ja) * | 2005-02-08 | 2012-08-08 | 日本電気株式会社 | 半導体記憶装置及び半導体記憶装置の読み出し方法 |
JP2008108355A (ja) * | 2006-10-25 | 2008-05-08 | Toshiba Corp | 強誘電体半導体記憶装置及び強誘電体半導体記憶装置の読み出し方法 |
US7800968B2 (en) | 2007-05-02 | 2010-09-21 | Infineon Technologies Ag | Symmetric differential current sense amplifier |
US7778065B2 (en) * | 2008-02-29 | 2010-08-17 | International Business Machines Corporation | Method and apparatus for implementing concurrent multiple level sensing operation for resistive memory devices |
CN101404142A (zh) * | 2008-10-31 | 2009-04-08 | 南开大学 | 电流镜型tft-oled显示像素单元电路及制备方法 |
US7933138B2 (en) | 2009-01-30 | 2011-04-26 | Texas Instruments Incorporated | F-RAM device with current mirror sense amp |
DE102010007629B4 (de) * | 2010-02-11 | 2013-08-14 | Texas Instruments Deutschland Gmbh | Integrierte Schaltung mit einem FRAM-Speicher und Verfahren zum Gewähren eines Lesezugriffs auf einen FRAM-Speicher |
DE102010044925B4 (de) * | 2010-09-10 | 2014-02-20 | Texas Instruments Deutschland Gmbh | Adaptiv vorgespannter Komparator |
JP2012104165A (ja) * | 2010-11-05 | 2012-05-31 | Elpida Memory Inc | 半導体装置 |
US9324405B2 (en) * | 2010-11-30 | 2016-04-26 | Radiant Technologies, Inc. | CMOS analog memories utilizing ferroelectric capacitors |
US8937841B2 (en) * | 2012-05-16 | 2015-01-20 | SK Hynix Inc. | Driver for semiconductor memory and method thereof |
US8750018B2 (en) * | 2012-06-04 | 2014-06-10 | Samsung Electronics Co., Ltd. | Sense amplifier circuitry for resistive type memory |
US8913442B2 (en) * | 2012-12-21 | 2014-12-16 | Elite Semiconductor Memory Technology Inc. | Circuit for sensing MLC flash memory |
JP6849587B2 (ja) * | 2014-09-26 | 2021-03-24 | レイディアント テクノロジーズ, インコーポレイテッドRadiant Technologies, Inc. | 強誘電体キャパシタを利用するcmoアナログメモリ |
US9552864B1 (en) * | 2016-03-11 | 2017-01-24 | Micron Technology, Inc. | Offset compensation for ferroelectric memory cell sensing |
US10192606B2 (en) * | 2016-04-05 | 2019-01-29 | Micron Technology, Inc. | Charge extraction from ferroelectric memory cell using sense capacitors |
-
2016
- 2016-06-03 US US15/173,310 patent/US9881661B2/en active Active
-
2017
- 2017-04-24 KR KR1020207009768A patent/KR102330193B1/ko active IP Right Grant
- 2017-04-24 SG SG11201810128WA patent/SG11201810128WA/en unknown
- 2017-04-24 CN CN201780033865.XA patent/CN109313919A/zh active Pending
- 2017-04-24 JP JP2018562309A patent/JP6644175B2/ja active Active
- 2017-04-24 WO PCT/US2017/029099 patent/WO2017209858A1/en unknown
- 2017-04-24 EP EP17807162.7A patent/EP3465690A4/en not_active Withdrawn
- 2017-04-24 KR KR1020187038121A patent/KR102100577B1/ko active IP Right Grant
- 2017-05-22 TW TW106116854A patent/TWI650750B/zh active
- 2017-12-19 US US15/847,583 patent/US10170173B2/en active Active
-
2018
- 2018-11-13 US US16/189,425 patent/US10395718B2/en active Active
-
2019
- 2019-07-08 US US16/504,876 patent/US11133048B2/en active Active
-
2021
- 2021-09-09 US US17/470,655 patent/US12027192B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
TW201801078A (zh) | 2018-01-01 |
US12027192B2 (en) | 2024-07-02 |
TWI650750B (zh) | 2019-02-11 |
US11133048B2 (en) | 2021-09-28 |
EP3465690A1 (en) | 2019-04-10 |
US20170352397A1 (en) | 2017-12-07 |
US20180114559A1 (en) | 2018-04-26 |
KR102330193B1 (ko) | 2021-11-23 |
CN109313919A (zh) | 2019-02-05 |
KR20200039812A (ko) | 2020-04-16 |
US10170173B2 (en) | 2019-01-01 |
EP3465690A4 (en) | 2020-02-26 |
JP2019520666A (ja) | 2019-07-18 |
KR102100577B1 (ko) | 2020-04-14 |
JP6644175B2 (ja) | 2020-02-12 |
US9881661B2 (en) | 2018-01-30 |
US20220005518A1 (en) | 2022-01-06 |
WO2017209858A1 (en) | 2017-12-07 |
KR20190004366A (ko) | 2019-01-11 |
US20200005851A1 (en) | 2020-01-02 |
US20190108867A1 (en) | 2019-04-11 |
US10395718B2 (en) | 2019-08-27 |
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