SG11201809540RA - Stripping compositions for removing photoresists from semiconductor substrates - Google Patents
Stripping compositions for removing photoresists from semiconductor substratesInfo
- Publication number
- SG11201809540RA SG11201809540RA SG11201809540RA SG11201809540RA SG11201809540RA SG 11201809540R A SG11201809540R A SG 11201809540RA SG 11201809540R A SG11201809540R A SG 11201809540RA SG 11201809540R A SG11201809540R A SG 11201809540RA SG 11201809540R A SG11201809540R A SG 11201809540RA
- Authority
- SG
- Singapore
- Prior art keywords
- international
- pct
- compositions
- english
- semiconductor substrates
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title abstract 4
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 title abstract 3
- 229920002120 photoresistant polymer Polymers 0.000 title abstract 2
- 239000003795 chemical substances by application Substances 0.000 abstract 2
- 229910052802 copper Inorganic materials 0.000 abstract 2
- 239000010949 copper Substances 0.000 abstract 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 2
- 229910019043 CoSn Inorganic materials 0.000 abstract 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- 241000220010 Rhode Species 0.000 abstract 1
- 229910007637 SnAg Inorganic materials 0.000 abstract 1
- 239000002253 acid Substances 0.000 abstract 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000000908 ammonium hydroxide Substances 0.000 abstract 1
- 229910002091 carbon monoxide Inorganic materials 0.000 abstract 1
- 150000001768 cations Chemical class 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 230000007797 corrosion Effects 0.000 abstract 1
- 238000005260 corrosion Methods 0.000 abstract 1
- 239000012776 electronic material Substances 0.000 abstract 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 abstract 1
- 239000003112 inhibitor Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000001465 metallisation Methods 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 230000009972 noncorrosive effect Effects 0.000 abstract 1
- 239000003960 organic solvent Substances 0.000 abstract 1
- 230000008520 organization Effects 0.000 abstract 1
- 125000001453 quaternary ammonium group Chemical group 0.000 abstract 1
- 102200110702 rs60261494 Human genes 0.000 abstract 1
- 229910052718 tin Inorganic materials 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/0005—Other compounding ingredients characterised by their effect
- C11D3/0073—Anticorrosion compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2003—Alcohols; Phenols
- C11D3/2065—Polyhydric alcohols
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2075—Carboxylic acids-salts thereof
- C11D3/2082—Polycarboxylic acids-salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2075—Carboxylic acids-salts thereof
- C11D3/2086—Hydroxy carboxylic acids-salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/28—Heterocyclic compounds containing nitrogen in the ring
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/30—Amines; Substituted amines ; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/34—Organic compounds containing sulfur
- C11D3/3427—Organic compounds containing sulfur containing thiol, mercapto or sulfide groups, e.g. thioethers or mercaptales
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/43—Solvents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Emergency Medicine (AREA)
- Health & Medical Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- General Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Detergent Compositions (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201662340204P | 2016-05-23 | 2016-05-23 | |
PCT/US2017/033041 WO2017205134A1 (en) | 2016-05-23 | 2017-05-17 | Stripping compositions for removing photoresists from semiconductor substrates |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201809540RA true SG11201809540RA (en) | 2018-12-28 |
Family
ID=58772728
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201809540RA SG11201809540RA (en) | 2016-05-23 | 2017-05-17 | Stripping compositions for removing photoresists from semiconductor substrates |
Country Status (9)
Country | Link |
---|---|
US (2) | US10266799B2 (ja) |
EP (2) | EP3249470B1 (ja) |
JP (1) | JP6813596B2 (ja) |
KR (1) | KR102363336B1 (ja) |
CN (1) | CN109195720B (ja) |
IL (2) | IL292944B2 (ja) |
SG (1) | SG11201809540RA (ja) |
TW (1) | TWI787184B (ja) |
WO (1) | WO2017205134A1 (ja) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102363336B1 (ko) | 2016-05-23 | 2022-02-15 | 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. | 반도체 기판으로부터 포토레지스트를 제거하기 위한 박리 조성물 |
CN107026120B (zh) * | 2017-03-30 | 2019-07-23 | 深圳市华星光电半导体显示技术有限公司 | 一种阵列基板的制作方法 |
US11175587B2 (en) * | 2017-09-29 | 2021-11-16 | Versum Materials Us, Llc | Stripper solutions and methods of using stripper solutions |
EP3721297B1 (en) * | 2017-12-08 | 2024-02-07 | Henkel AG & Co. KGaA | Photoresist stripper compostion |
TWI768144B (zh) * | 2018-02-14 | 2022-06-21 | 德商馬克專利公司 | 化學剝離劑組合物及移除光阻之方法 |
WO2020040042A1 (ja) * | 2018-08-21 | 2020-02-27 | 富士フイルム株式会社 | 薬液、薬液収容体 |
US11209736B2 (en) * | 2018-10-25 | 2021-12-28 | Taiwan Semiconductor Manufacturing Company Ltd. | Method for cleaning substrate, method for manufacturing photomask and method for cleaning photomask |
SG11202111643QA (en) * | 2019-04-24 | 2021-11-29 | Fujifilm Electronic Materials U S A Inc | Stripping compositions for removing photoresists from semiconductor substrates |
CN114072488A (zh) * | 2019-05-01 | 2022-02-18 | 富士胶片电子材料美国有限公司 | 蚀刻组合物 |
CN114258424B (zh) | 2019-06-13 | 2023-07-04 | 富士胶片电子材料美国有限公司 | 蚀刻组合物 |
KR20220056193A (ko) * | 2019-08-30 | 2022-05-04 | 다우 글로벌 테크놀로지스 엘엘씨 | 포토레지스트 박리 조성물 |
CN111054358B (zh) * | 2019-12-06 | 2022-02-01 | 西南石油大学 | 一种铜镍锡水滑石催化剂及其制备方法 |
JP2021152585A (ja) * | 2020-03-24 | 2021-09-30 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
US11378886B2 (en) * | 2020-09-29 | 2022-07-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for removing resist layer, and method of manufacturing semiconductor |
CN113275323B (zh) * | 2021-05-14 | 2022-06-24 | 云谷(固安)科技有限公司 | 液态胶体分离方法和液态胶体分离系统 |
CN113921383B (zh) | 2021-09-14 | 2022-06-03 | 浙江奥首材料科技有限公司 | 一种铜表面钝化组合物、其用途及包含其的光刻胶剥离液 |
WO2023114638A1 (en) * | 2021-12-15 | 2023-06-22 | Versum Materials Us, Llc | Compositions for removing photoresist and etch residue from a substrate with copper corrosion inhibitor and uses thereof |
CN117872693B (zh) * | 2024-03-13 | 2024-07-12 | 深圳市松柏科工股份有限公司 | 正胶剥离液、正胶剥离液的制备方法及其应用 |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5665688A (en) * | 1996-01-23 | 1997-09-09 | Olin Microelectronics Chemicals, Inc. | Photoresist stripping composition |
JP2002107953A (ja) * | 2000-09-28 | 2002-04-10 | Mitsubishi Paper Mills Ltd | 平版印刷版の現像処理方法 |
JP2003195517A (ja) | 2001-12-14 | 2003-07-09 | Shipley Co Llc | フォトレジスト用現像液 |
JP3738992B2 (ja) * | 2001-12-27 | 2006-01-25 | 東京応化工業株式会社 | ホトレジスト用剥離液 |
US6717019B2 (en) | 2002-01-30 | 2004-04-06 | Air Products And Chemicals, Inc. | Glycidyl ether-capped acetylenic diol ethoxylate surfactants |
US8338087B2 (en) * | 2004-03-03 | 2012-12-25 | Advanced Technology Materials, Inc | Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate |
KR100617855B1 (ko) * | 2004-04-30 | 2006-08-28 | 산요가세이고교 가부시키가이샤 | 알칼리 세정제 |
US20060063687A1 (en) | 2004-09-17 | 2006-03-23 | Minsek David W | Composition and process for ashless removal of post-etch photoresist and/or bottom anti-reflective material on a substrate |
WO2006056298A1 (en) | 2004-11-25 | 2006-06-01 | Basf Aktiengesellschaft | Resist stripper and residue remover for cleaning copper surfaces in semiconductor processing |
US20060154186A1 (en) * | 2005-01-07 | 2006-07-13 | Advanced Technology Materials, Inc. | Composition useful for removal of post-etch photoresist and bottom anti-reflection coatings |
US8759268B2 (en) * | 2006-08-24 | 2014-06-24 | Daikin Industries, Ltd. | Solution for removing residue after semiconductor dry process and method of removing the residue using the same |
EP2082024A4 (en) | 2006-09-25 | 2010-11-17 | Advanced Tech Materials | COMPOSITIONS AND METHODS FOR REMOVING A PHOTORESISTANT AGENT FOR RECYCLING A SILICON GALETTE |
TW200916571A (en) * | 2007-08-02 | 2009-04-16 | Advanced Tech Materials | Non-fluoride containing composition for the removal of residue from a microelectronic device |
US8551682B2 (en) | 2007-08-15 | 2013-10-08 | Dynaloy, Llc | Metal conservation with stripper solutions containing resorcinol |
JP2009069505A (ja) * | 2007-09-13 | 2009-04-02 | Tosoh Corp | レジスト除去用洗浄液及び洗浄方法 |
JP2009075285A (ja) | 2007-09-20 | 2009-04-09 | Fujifilm Corp | 半導体デバイスの剥離液、及び、剥離方法 |
US8357646B2 (en) * | 2008-03-07 | 2013-01-22 | Air Products And Chemicals, Inc. | Stripper for dry film removal |
US8361237B2 (en) * | 2008-12-17 | 2013-01-29 | Air Products And Chemicals, Inc. | Wet clean compositions for CoWP and porous dielectrics |
KR100950779B1 (ko) | 2009-08-25 | 2010-04-02 | 엘티씨 (주) | Tft―lcd 통합공정용 포토레지스트 박리제 조성물 |
KR101169332B1 (ko) | 2010-05-12 | 2012-07-30 | 주식회사 이엔에프테크놀로지 | 포토레지스트 박리액 조성물 |
JP5508158B2 (ja) * | 2010-06-22 | 2014-05-28 | 富士フイルム株式会社 | 洗浄組成物、洗浄方法、及び、半導体装置の製造方法 |
JP2013533631A (ja) * | 2010-07-16 | 2013-08-22 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | エッチング後残渣を除去するための水性洗浄剤 |
CN102466986A (zh) * | 2010-11-09 | 2012-05-23 | 苏州瑞红电子化学品有限公司 | 一种防腐蚀碱性显影液组合物 |
US8530143B2 (en) * | 2010-11-18 | 2013-09-10 | Eastman Kodak Company | Silicate-free developer compositions |
WO2016076031A1 (ja) * | 2014-11-13 | 2016-05-19 | 三菱瓦斯化学株式会社 | タングステンを含む材料のダメージを抑制した半導体素子の洗浄液、およびこれを用いた半導体素子の洗浄方法 |
TWI690780B (zh) | 2014-12-30 | 2020-04-11 | 美商富士軟片電子材料美國股份有限公司 | 用於自半導體基板去除光阻之剝離組成物 |
KR102363336B1 (ko) * | 2016-05-23 | 2022-02-15 | 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. | 반도체 기판으로부터 포토레지스트를 제거하기 위한 박리 조성물 |
-
2017
- 2017-05-17 KR KR1020187034099A patent/KR102363336B1/ko active IP Right Grant
- 2017-05-17 US US15/597,395 patent/US10266799B2/en active Active
- 2017-05-17 CN CN201780030713.4A patent/CN109195720B/zh active Active
- 2017-05-17 IL IL292944A patent/IL292944B2/en unknown
- 2017-05-17 WO PCT/US2017/033041 patent/WO2017205134A1/en active Application Filing
- 2017-05-17 SG SG11201809540RA patent/SG11201809540RA/en unknown
- 2017-05-17 JP JP2018560013A patent/JP6813596B2/ja active Active
- 2017-05-22 TW TW106116911A patent/TWI787184B/zh active
- 2017-05-23 EP EP17172498.2A patent/EP3249470B1/en active Active
- 2017-05-23 EP EP19166565.2A patent/EP3537218A1/en active Pending
-
2018
- 2018-10-27 IL IL262630A patent/IL262630B/en unknown
-
2019
- 2019-04-09 US US16/378,635 patent/US10947484B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
WO2017205134A1 (en) | 2017-11-30 |
IL262630B (en) | 2022-06-01 |
JP2019518986A (ja) | 2019-07-04 |
IL292944B2 (en) | 2023-06-01 |
US20170335252A1 (en) | 2017-11-23 |
IL262630A (en) | 2018-12-31 |
CN109195720B (zh) | 2021-10-29 |
KR20190010571A (ko) | 2019-01-30 |
TW201816101A (zh) | 2018-05-01 |
US10947484B2 (en) | 2021-03-16 |
CN109195720A (zh) | 2019-01-11 |
IL292944A (en) | 2022-07-01 |
KR102363336B1 (ko) | 2022-02-15 |
EP3249470B1 (en) | 2019-04-03 |
US10266799B2 (en) | 2019-04-23 |
TWI787184B (zh) | 2022-12-21 |
JP6813596B2 (ja) | 2021-01-13 |
EP3249470A1 (en) | 2017-11-29 |
US20190233771A1 (en) | 2019-08-01 |
EP3537218A1 (en) | 2019-09-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG11201809540RA (en) | Stripping compositions for removing photoresists from semiconductor substrates | |
SG11201908616PA (en) | Cleaning compositions for removing residues on semiconductor substrates | |
SG11201908617QA (en) | Surface treatment methods and compositions therefor | |
SG11201407650VA (en) | Composition and process for stripping photoresist from a surface including titanium nitride | |
SG11201901450QA (en) | Methods of forming semiconductor device structures including two-dimensional material structures | |
SG11201901751QA (en) | Methods for biobased derivatization of cellulosic surfaces | |
SG11201909640WA (en) | Process for purifying alkanesulfonic anhydride and process for producing alkanesulfonic acid using the purified alkanesulfonic anhydride | |
SG11201804807VA (en) | Computer architecture and method for modifying data intake parameters based on a predictive model | |
SG11201806578XA (en) | Self-alignment of metal and via using selective deposition | |
SG11201908534YA (en) | Calcium hydroxide-containing compositions and associated systems and methods | |
SG11201810493WA (en) | System and method for electrical circuit monitoring | |
SG11201808666PA (en) | Charge extraction from ferroelectric memory cell | |
SG11201803933PA (en) | Optical metrology of lithographic processes using asymmetric sub-resolution features to enhance measurement | |
SG11201903153PA (en) | Metal recovery process | |
SG11201408177VA (en) | Self-cleaning coatings and methods for making same | |
SG11201808962RA (en) | Method for treating graphene sheets for large-scale transfer using free-float method | |
SG11201804115UA (en) | Lithographic apparatus and method of operating a lithographic apparatus | |
SG11201907823TA (en) | Methods and system for cleaning gas turbine engine | |
SG11201805149XA (en) | Compositions comprising 15-hepe and methods of using the same | |
SG11201906686TA (en) | Ceramic material comprising a pseudo-cubic phase, a process for preparing and uses of the same | |
SG11201806393QA (en) | Use of gabaa receptor modulators for treatment of itch | |
SG11201909024XA (en) | Obtaining data from targets using imagery and other remote sensing data | |
SG11201804608PA (en) | Coating composition for substrates immersed in water | |
SG11201810347UA (en) | Cleansing composition | |
SG11201900207PA (en) | Polymer compositions for self-assembly applications |