SG11201809175PA - Silica-based composite fine particle dispersion and method for manufacturing same - Google Patents
Silica-based composite fine particle dispersion and method for manufacturing sameInfo
- Publication number
- SG11201809175PA SG11201809175PA SG11201809175PA SG11201809175PA SG11201809175PA SG 11201809175P A SG11201809175P A SG 11201809175PA SG 11201809175P A SG11201809175P A SG 11201809175PA SG 11201809175P A SG11201809175P A SG 11201809175PA SG 11201809175P A SG11201809175P A SG 11201809175PA
- Authority
- SG
- Singapore
- Prior art keywords
- silica
- based composite
- fine particle
- composite fine
- particle dispersion
- Prior art date
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title abstract 19
- 239000002131 composite material Substances 0.000 title abstract 9
- 239000010419 fine particle Substances 0.000 title abstract 9
- 239000000377 silicon dioxide Substances 0.000 title abstract 9
- 239000006185 dispersion Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 abstract 4
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 abstract 4
- 238000002441 X-ray diffraction Methods 0.000 abstract 2
- 239000002245 particle Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 1
- 238000005259 measurement Methods 0.000 abstract 1
- 238000005498 polishing Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/113—Silicon oxides; Hydrates thereof
- C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
- C01B33/14—Colloidal silica, e.g. dispersions, gels, sols
- C01B33/146—After-treatment of sols
- C01B33/149—Coating
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/113—Silicon oxides; Hydrates thereof
- C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
- C01B33/18—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/04—Aqueous dispersions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/06—Other polishing compositions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Dispersion Chemistry (AREA)
- Composite Materials (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Silicon Compounds (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016086614 | 2016-04-22 | ||
JP2016086612 | 2016-04-22 | ||
JP2016086613 | 2016-04-22 | ||
JP2016086610 | 2016-04-22 | ||
PCT/JP2017/014187 WO2017183452A1 (ja) | 2016-04-22 | 2017-04-05 | シリカ系複合微粒子分散液及びその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201809175PA true SG11201809175PA (en) | 2018-11-29 |
Family
ID=60115860
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201809175PA SG11201809175PA (en) | 2016-04-22 | 2017-04-05 | Silica-based composite fine particle dispersion and method for manufacturing same |
Country Status (7)
Country | Link |
---|---|
US (1) | US10844259B2 (zh) |
EP (1) | EP3447790B1 (zh) |
KR (2) | KR20220034255A (zh) |
CN (1) | CN109155246B (zh) |
SG (1) | SG11201809175PA (zh) |
TW (1) | TWI656096B (zh) |
WO (1) | WO2017183452A1 (zh) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3632848A4 (en) * | 2017-06-01 | 2021-03-31 | JGC Catalysts and Chemicals Ltd. | DISPERSION OF COMPOSITE FINE PARTICLES BASED ON CERIUM OXIDE, ITS PRODUCTION PROCESS, AND DISPERSION OF ABRASIVE POLISHING GRAINS INCLUDING A DISPERSION OF COMPOSITE FINE PARTICLES BASED ON CERIUM OXIDE |
JP7020865B2 (ja) * | 2017-10-30 | 2022-02-16 | 日揮触媒化成株式会社 | セリア系複合微粒子分散液、その製造方法及びセリア系複合微粒子分散液を含む研磨用砥粒分散液 |
JP7002350B2 (ja) * | 2018-01-23 | 2022-01-20 | 日揮触媒化成株式会社 | セリア系複合中空微粒子分散液、その製造方法及びセリア系複合中空微粒子分散液を含む研磨用砥粒分散液 |
US11549034B2 (en) * | 2018-08-09 | 2023-01-10 | Versum Materials Us, Llc | Oxide chemical mechanical planarization (CMP) polishing compositions |
IT201900006736A1 (it) | 2019-05-10 | 2020-11-10 | Applied Materials Inc | Procedimenti di fabbricazione di package |
US11931855B2 (en) * | 2019-06-17 | 2024-03-19 | Applied Materials, Inc. | Planarization methods for packaging substrates |
EP3792327A1 (en) * | 2019-09-11 | 2021-03-17 | Fujimi Incorporated | Polishing composition, polishing method and method for manufacturing semiconductor substrate |
EP3816259A4 (en) * | 2019-09-17 | 2021-10-13 | AGC Inc. | ABRASIVE AGENT, GLASS GRINDING PROCESS AND GLASS PRODUCTION PROCESS |
US11454884B2 (en) | 2020-04-15 | 2022-09-27 | Applied Materials, Inc. | Fluoropolymer stamp fabrication method |
CN115697907A (zh) * | 2020-05-20 | 2023-02-03 | 日铁化学材料株式会社 | 球状结晶质二氧化硅颗粒及其制造方法 |
CN115558100B (zh) * | 2022-09-30 | 2023-12-22 | 桂林理工大学 | 一种改性透射电镜载网及其制备方法与应用 |
CN116063930A (zh) * | 2023-03-29 | 2023-05-05 | 国科大杭州高等研究院 | 一种半导体硅片抛光用的纳米硅铈复合抛光液的制备方法 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
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US2746861A (en) | 1953-07-17 | 1956-05-22 | Jr Walston Chubb | Ternary zirconium base alloy containing sn and ti |
JP3359479B2 (ja) | 1995-11-07 | 2002-12-24 | 三井金属鉱業株式会社 | 研磨材、その製造方法及び研磨方法 |
JP2746861B2 (ja) | 1995-11-20 | 1998-05-06 | 三井金属鉱業株式会社 | 酸化セリウム超微粒子の製造方法 |
JP2003509855A (ja) | 1999-09-15 | 2003-03-11 | ロデール ホールディングス インコーポレイテッド | 化学機械研磨中に不溶性ケイ酸塩を形成するためのスラリー |
US20030118824A1 (en) | 2001-12-20 | 2003-06-26 | Tokarz Bozena Stanislawa | Coated silica particles and method for production thereof |
KR100574225B1 (ko) * | 2003-10-10 | 2006-04-26 | 요업기술원 | 실리카에 세리아/실리카가 코팅된 화학적 기계적 연마용연마재 및 그 제조방법 |
WO2005110679A1 (ja) * | 2004-05-19 | 2005-11-24 | Nissan Chemical Industries, Ltd. | 研磨用組成物 |
US20050279733A1 (en) * | 2004-06-18 | 2005-12-22 | Cabot Microelectronics Corporation | CMP composition for improved oxide removal rate |
JP2007061989A (ja) | 2005-09-02 | 2007-03-15 | Hitachi Maxell Ltd | 研磨用複合酸化物粒子およびスラリー状研磨材 |
JP2008227098A (ja) | 2007-03-12 | 2008-09-25 | Fujifilm Corp | 金属用研磨液 |
JP2009078936A (ja) | 2007-09-26 | 2009-04-16 | Jgc Catalysts & Chemicals Ltd | 金平糖状複合シリカゾルの製造方法 |
JP5444625B2 (ja) | 2008-03-05 | 2014-03-19 | 日立化成株式会社 | Cmp研磨液、基板の研磨方法及び電子部品 |
JP5371416B2 (ja) | 2008-12-25 | 2013-12-18 | 富士フイルム株式会社 | 研磨液及び研磨方法 |
EP2438133B1 (en) | 2009-06-05 | 2018-07-11 | Basf Se | Polishing slurry containing raspberry-type metal oxide nanostructures coated with CeO2 |
JP2011142284A (ja) * | 2009-12-10 | 2011-07-21 | Hitachi Chem Co Ltd | Cmp研磨液、基板の研磨方法及び電子部品 |
JP5881394B2 (ja) | 2011-12-06 | 2016-03-09 | 日揮触媒化成株式会社 | シリカ系複合粒子およびその製造方法 |
JP5787745B2 (ja) * | 2011-12-26 | 2015-09-30 | 日揮触媒化成株式会社 | シリカ系複合粒子の製造方法 |
JP6358899B2 (ja) | 2013-08-28 | 2018-07-18 | 日揮触媒化成株式会社 | 金属酸化物粒子およびその製造方法 |
JP6385307B2 (ja) | 2014-03-31 | 2018-09-05 | 日揮触媒化成株式会社 | 板状粒子、及び該板状粒子を含む研磨用組成物 |
JP6362385B2 (ja) | 2014-04-04 | 2018-07-25 | 株式会社フジミインコーポレーテッド | 基板の製造方法および研磨用組成物 |
JP6352060B2 (ja) * | 2014-06-06 | 2018-07-04 | 花王株式会社 | 酸化珪素膜研磨用研磨液組成物 |
US10730755B2 (en) | 2015-03-31 | 2020-08-04 | Jgc Catalysts And Chemicals Ltd. | Silica-based composite fine-particle dispersion, method for producing same, and polishing slurry including silica-based composite fine-particle dispersion |
JP2017001927A (ja) | 2015-06-15 | 2017-01-05 | 堺化学工業株式会社 | 研磨用複合粒子、研磨用複合粒子の製造方法及び研磨用スラリー |
US10421890B2 (en) | 2016-03-31 | 2019-09-24 | Versum Materials Us, Llc | Composite particles, method of refining and use thereof |
-
2017
- 2017-04-05 SG SG11201809175PA patent/SG11201809175PA/en unknown
- 2017-04-05 WO PCT/JP2017/014187 patent/WO2017183452A1/ja active Application Filing
- 2017-04-05 EP EP17785794.3A patent/EP3447790B1/en active Active
- 2017-04-05 US US16/094,969 patent/US10844259B2/en active Active
- 2017-04-05 CN CN201780024719.0A patent/CN109155246B/zh active Active
- 2017-04-05 KR KR1020227007249A patent/KR20220034255A/ko not_active Application Discontinuation
- 2017-04-05 KR KR1020187029313A patent/KR102394895B1/ko active IP Right Grant
- 2017-04-19 TW TW106113067A patent/TWI656096B/zh active
Also Published As
Publication number | Publication date |
---|---|
KR20220034255A (ko) | 2022-03-17 |
KR102394895B1 (ko) | 2022-05-04 |
WO2017183452A1 (ja) | 2017-10-26 |
TWI656096B (zh) | 2019-04-11 |
US10844259B2 (en) | 2020-11-24 |
CN109155246B (zh) | 2024-01-05 |
EP3447790B1 (en) | 2023-05-24 |
TW201800339A (zh) | 2018-01-01 |
US20190153279A1 (en) | 2019-05-23 |
KR20180134889A (ko) | 2018-12-19 |
CN109155246A (zh) | 2019-01-04 |
EP3447790A4 (en) | 2020-04-08 |
EP3447790A1 (en) | 2019-02-27 |
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