SG11201809175PA - Silica-based composite fine particle dispersion and method for manufacturing same - Google Patents

Silica-based composite fine particle dispersion and method for manufacturing same

Info

Publication number
SG11201809175PA
SG11201809175PA SG11201809175PA SG11201809175PA SG11201809175PA SG 11201809175P A SG11201809175P A SG 11201809175PA SG 11201809175P A SG11201809175P A SG 11201809175PA SG 11201809175P A SG11201809175P A SG 11201809175PA SG 11201809175P A SG11201809175P A SG 11201809175PA
Authority
SG
Singapore
Prior art keywords
silica
based composite
fine particle
composite fine
particle dispersion
Prior art date
Application number
SG11201809175PA
Inventor
Yuji Tawarazako
Michio Komatsu
Kazuhiro Nakayama
Yukihiro Iwasaki
Yoshinori Wakamiya
Shota Kawakami
Shinya Usuda
Original Assignee
Jgc Catalysts & Chemicals Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jgc Catalysts & Chemicals Ltd filed Critical Jgc Catalysts & Chemicals Ltd
Publication of SG11201809175PA publication Critical patent/SG11201809175PA/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/14—Colloidal silica, e.g. dispersions, gels, sols
    • C01B33/146—After-treatment of sols
    • C01B33/149—Coating
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/18—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/06—Other polishing compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Composite Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Silicon Compounds (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

SILICA-BASED COMPOSITE FINE PARTICLE DISPERSION AND METHOD FOR MANUFACTURING SAME The present invention addresses the problem of providing a silica-based composite fine particle dispersion with which a silica film, a Si-wafer, or even a difficult to machine material can be polished at high speed while achieving high planar accuracy (such as few scratches), and which can be preferably used for polishing the surface of a semiconductor device, such as a semiconductor substrate or a wiring board. The problem is solved by means of a silica-based composite fine particle dispersion including a silica-based composite fine particle which comprises a mother particle containing amorphous silica as a main component with a child particle containing crystalline ceria as a main component on a surface thereof. The silica-based composite fine particle has the following features. The silica- based composite fine particle has a silica to ceria mass ratio of 100:11 to 316. The silica-based composite fine particle is such that, when subjected to X-ray diffraction, only the crystalline phase of ceria is detected. The silica-based composite fine particle is such that, when subjected to X-ray diffraction for measurement, the crystalline ceria has a crystallite diameter of 10 to 25 nm. [Fig. 1]
SG11201809175PA 2016-04-22 2017-04-05 Silica-based composite fine particle dispersion and method for manufacturing same SG11201809175PA (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2016086613 2016-04-22
JP2016086614 2016-04-22
JP2016086610 2016-04-22
JP2016086612 2016-04-22
PCT/JP2017/014187 WO2017183452A1 (en) 2016-04-22 2017-04-05 Silica-based composite fine particle dispersion and method for manufacturing same

Publications (1)

Publication Number Publication Date
SG11201809175PA true SG11201809175PA (en) 2018-11-29

Family

ID=60115860

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201809175PA SG11201809175PA (en) 2016-04-22 2017-04-05 Silica-based composite fine particle dispersion and method for manufacturing same

Country Status (7)

Country Link
US (1) US10844259B2 (en)
EP (1) EP3447790B1 (en)
KR (2) KR102394895B1 (en)
CN (1) CN109155246B (en)
SG (1) SG11201809175PA (en)
TW (1) TWI656096B (en)
WO (1) WO2017183452A1 (en)

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JP7020865B2 (en) * 2017-10-30 2022-02-16 日揮触媒化成株式会社 Abrasive grain dispersion for polishing containing ceria-based composite fine particle dispersion, its manufacturing method, and ceria-based composite fine particle dispersion.
JP7002350B2 (en) * 2018-01-23 2022-01-20 日揮触媒化成株式会社 Abrasive grain dispersion for polishing containing ceria-based composite hollow fine particle dispersion, its manufacturing method, and ceria-based composite hollow fine particle dispersion.
US11549034B2 (en) * 2018-08-09 2023-01-10 Versum Materials Us, Llc Oxide chemical mechanical planarization (CMP) polishing compositions
IT201900006736A1 (en) 2019-05-10 2020-11-10 Applied Materials Inc PACKAGE MANUFACTURING PROCEDURES
US11931855B2 (en) * 2019-06-17 2024-03-19 Applied Materials, Inc. Planarization methods for packaging substrates
EP3792327A1 (en) * 2019-09-11 2021-03-17 Fujimi Incorporated Polishing composition, polishing method and method for manufacturing semiconductor substrate
EP3816259A4 (en) * 2019-09-17 2021-10-13 AGC Inc. Abrasive agent, method for grinding glass, and method for producing glass
US11454884B2 (en) 2020-04-15 2022-09-27 Applied Materials, Inc. Fluoropolymer stamp fabrication method
JPWO2021235530A1 (en) * 2020-05-20 2021-11-25
CN115558100B (en) * 2022-09-30 2023-12-22 桂林理工大学 Modified transmission electron microscope carrier net and preparation method and application thereof
CN116063930A (en) * 2023-03-29 2023-05-05 国科大杭州高等研究院 Preparation method of nano silicon-cerium composite polishing solution for polishing semiconductor silicon wafers

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Also Published As

Publication number Publication date
EP3447790A1 (en) 2019-02-27
CN109155246A (en) 2019-01-04
EP3447790B1 (en) 2023-05-24
EP3447790A4 (en) 2020-04-08
TW201800339A (en) 2018-01-01
KR20220034255A (en) 2022-03-17
WO2017183452A1 (en) 2017-10-26
US10844259B2 (en) 2020-11-24
CN109155246B (en) 2024-01-05
KR20180134889A (en) 2018-12-19
US20190153279A1 (en) 2019-05-23
TWI656096B (en) 2019-04-11
KR102394895B1 (en) 2022-05-04

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