CN116063930A - Preparation method of nano silicon-cerium composite polishing solution for polishing semiconductor silicon wafers - Google Patents
Preparation method of nano silicon-cerium composite polishing solution for polishing semiconductor silicon wafers Download PDFInfo
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Abstract
The invention provides a preparation method of a nano silicon-cerium composite polishing solution for polishing a semiconductor silicon wafer, which comprises the following steps: under the stirring condition, sequentially adding an oxidant, an organic complexing agent, a surfactant and an organic alkali pH regulator into the nano-silicon-cerium composite particle aqueous solution, and supplementing deionized water to adjust the content so that the pH value of the polishing solution is in the range of 8-12; and then, fully mixing the particles and auxiliary materials by using a homogenizer or a sand mill ball mill device, and dispersing the mixture in the aqueous solution. The removal rate of the nano silicon cerium composite polishing solution for polishing the semiconductor silicon wafer prepared by the preparation method is consistent with that of imported silica sol, and the nano silicon cerium composite polishing solution can reach the surface roughness Ra required by a semiconductor: 0.1-0.2nm; has wide application prospect in the fields of silicon substrate polishing and the like.
Description
Technical Field
The invention relates to the technical field of surface polishing treatment of semiconductor monocrystalline silicon wafers, in particular to a preparation method of nano silicon cerium composite polishing solution for polishing semiconductor wafers.
Background
With the development of semiconductor technology, the wafer size is continuously increased, the line width is continuously reduced, the requirements on the quality of the processing surface of the silicon substrate are higher and higher, and the Chemical Mechanical Polishing (CMP) technology is an essential technology for polishing the silicon substrate material. The general requirements of the silicon substrate polishing process include various aspects of removal rate, micro-scratches, roughness, residual particles, haze values, etc., wherein the polishing abrasive in the polishing liquid is an important consumable.
In the disclosed technical scheme, CN 107936848A, CN 102660195A, CN 102061131A adopts colloidal silicon dioxide as polishing liquid abrasive, and silicon dioxide particles play a key role in the silicon wafer polishing process. According to the silicon wafer polishing mechanism reported in the literature, atoms on the surface of a silicon material and OH < - > in a solution react chemically to form a soft layer with a certain thickness, the soft layer can be adsorbed on the surface of the polishing material to block further chemical reaction, and silicon dioxide particles in the polishing solution can remove the soft layer under the action of pressure and a polishing pad to expose new silicon atoms, so that a high-precision surface is obtained. In the public report and actual processing, most of enterprises for polishing silicon wafers adopt silicon dioxide particles as abrasive materials, and most of the enterprises adopt imported silica sol; in order to bypass the patent barriers of foreign enterprises in silica sol, some domestic polishing liquid production enterprises adopt cerium oxide as an abrasive, but the polishing speed of the cerium oxide is slightly lower than that of the silica sol.
Therefore, the problem that the polishing rate is low when the silica sol patent barrier and the nano cerium oxide are polished to polish the silicon wafer needs to be solved at present, and the development of novel polishing abrasive materials and a liquid preparation process technology suitable for the abrasive materials are needed to be solved by the current technical problems urgently needed by the technicians in the field.
Disclosure of Invention
The invention aims at solving the problems of polishing solution for polishing a silicon substrate in the prior art and provides a preparation method of nano silicon cerium composite polishing solution for polishing a semiconductor silicon wafer, which has the removal rate consistent with that of imported silica sol and the surface roughness.
A preparation method of nano silicon cerium composite polishing solution for polishing a semiconductor silicon wafer comprises the following steps:
under the stirring condition, sequentially adding an oxidant, an organic complexing agent, a surfactant and an organic alkali pH regulator into the nano-silicon-cerium composite particle aqueous solution, and supplementing deionized water to adjust the content so that the pH value of the polishing solution is in the range of 8-12; and then fully mixing the particles and auxiliary materials by using a homogenizer or a sand mill ball mill device, and dispersing the mixture in an aqueous solution, wherein the weight percentages of the components are as follows:
1 to 30 percent of nano silicon cerium composite particles,
0.01 to 1 percent of oxidant,
0.01 to 0.5 percent of organic complexing agent,
0.1 to 2 percent of surfactant,
0.1 to 2 percent of organic alkali,
the balance of deionized water;
the nano silicon-cerium composite particle aqueous solution is obtained by adding nano silicon-cerium composite particles into deionized water and stirring.
The invention can also adopt or combine the following technical proposal when adopting the technical proposal:
as a preferable technical scheme of the invention: the particle size of the nano-silicon-cerium composite particles is 10-80nm.
As a preferable technical scheme of the invention: the grain diameter of the nano silicon-cerium composite particles is 50-60nm for rough polishing and 10-20nm for fine polishing.
As a preferable technical scheme of the invention: the oxidant adopts one or more of sodium persulfate, potassium persulfate, hydrogen peroxide, perchlorate, hypochlorite, sodium dichloroisocyanurate, sodium nitrate, ammonium nitrate and organic peroxide.
As a preferable technical scheme of the invention: the complexing agent adopts one or more of citric acid, disodium ethylenediamine tetraacetate and sodium citrate.
As a preferable technical scheme of the invention: the surfactant adopts one or more of ammonium polyacrylate and sodium polyacrylate.
As a preferable technical scheme of the invention: the organic alkali adopts organic amine compounds: one or more of ethanolamine, triethanolamine, tetramethylammonium hydroxide, and polyamino compounds.
As a preferable technical scheme of the invention: the weight percentage of the nano silicon-cerium composite particles is between 2 and 10 percent.
As a preferable technical scheme of the invention: the nano silicon cerium composite particles are prepared by the following steps:
s1, dissolving sodium silicate in pure water to prepare sodium silicate solution;
s2, preparing an acid solution;
s3, dropwise adding the acid solution obtained in the step S2 into the solution S1 under stirring, and reacting to generate silicic acid precipitate;
s4, filtering the precipitate obtained in the step S3, washing with water to obtain silicic acid, and preparing the silicic acid and pure water into suspension;
s5, dissolving cerium salt in the silicic acid suspension generated in the step S4, and then adding a surfactant;
s6, dropwise adding an alkaline solution into the solution generated in the step S5 to form coprecipitation of silicic acid and cerium hydroxide;
s7, filtering, drying and calcining the precipitate generated in the step S6 to obtain the silicon-cerium composite particles,
wherein the concentration of sodium silicate in the step S1 is 1-40%;
in step S2, the acid solution is an inorganic acid, such as sulfuric acid, nitric acid, and hydrochloric acid; or the acid solution is organic acid such as oxalic acid and citric acid; or the acid solution is carbonic acid generated by introducing carbon dioxide gas. The concentration of the acid solution is 0.1-35%;
in the step S5, cerium salt in the cerium salt is selected from cerium carbonate, cerium acetate, cerium oxalate, cerium nitrate or cerium chloride, and the concentration of the cerium salt is 1-20%; the surfactant is one or more of cetyl trimethyl ammonium bromide, polyethylene glycol, stearic acid, sodium polyacrylate, ammonium polyacrylate and quaternary ammonium compound;
in the step S6, the alkaline solution is selected from ammonia water, urea, sodium carbonate, sodium bicarbonate or ammonium bicarbonate.
The drying mode in the step S7 is hot air drying, infrared drying, microwave drying, spray drying and the like; the calcining equipment is a muffle furnace, a shuttle furnace, a trolley furnace, a lifting furnace, a push plate furnace, a roller furnace and the like; the calcination temperature is 400-1100 ℃.
The invention discloses a preparation method of nano silicon cerium composite polishing solution for polishing a semiconductor silicon wafer, which is characterized in that sodium silicate is hydrolyzed to obtain silicic acid precipitate, the silicic acid precipitate is mixed with cerium nitrate solution, ammonia water is used as a precipitant to obtain composite particles of cerium hydroxide coated silicic acid, the composite particles are filtered, dried and calcined until the nano silicon/cerium composite particles are obtained; the preparation method of the nano-silicon-cerium composite particles is simple and stable, has few procedures, low requirements on equipment, few raw material types, and low production cost, and generates tail gas which is easy to absorb and treat, and is nontoxic and pollution-free; in addition, by adding a certain amount of surfactant, the produced silicon-cerium composite particles are spherical, have high purity, do not agglomerate, have narrow particle size distribution and are easy to disperse; the silicon-cerium composite particles obtained by the invention are applied to the field of polishing of semiconductor monocrystalline silicon wafers, the polishing efficiency is higher than that of imported coarse polished silica sol under the same concentration, the problems of crystallization precipitation of the silica sol, difficult cleaning after polishing and the like are avoided, and the silicon-cerium composite particles have wide application prospects in the fields of polishing of semiconductor monocrystalline silicon wafers and the like. The polishing solution comprises the following components in percentage by weight: 1-30% of nano silicon cerium composite particles, 0.01-1% of oxidant, 0.01-0.5% of organic complexing agent, 0.1-2% of surfactant, and organic alkali as a pH regulator, wherein the addition amount is determined according to the pH value; the balance is deionized water, the removal rate of the nano silicon-cerium composite polishing solution for polishing the semiconductor silicon wafer prepared by the preparation method disclosed by the invention is the same as that of imported silica sol, and the surface roughness Ra required by fine polishing of the semiconductor can be realized: 0.1-0.2nm; the nano silicon-cerium composite particles can realize silicon polishing only by 2% of low concentration, so that the cost is saved, and the nano silicon-cerium composite particles have wide application prospects in the fields of silicon substrate polishing and the like.
Drawings
FIG. 1 is a photograph of a first electron microscope of the nano-sized cerium silicon composite particles of the present invention;
fig. 2 is a second electron microscope photograph of the nano-silicon-cerium composite particles of the present invention.
Detailed Description
The invention will be described in further detail with reference to the drawings and specific embodiments.
The nano silicon-cerium composite polishing solution prepared by the preparation method of the nano silicon-cerium composite polishing solution for polishing the semiconductor silicon wafer comprises the following components in percentage by weight:
1 to 30 percent of nano silicon cerium composite particles,
0.01 to 1 percent of oxidant,
complexing agent 0.01-0.5%,
0.1 to 2 percent of surfactant,
the pH regulator is 0.1-2% of organic alkali, the adding amount is determined according to the pH value, the pH value is 8-12,
the balance of deionized water;
the preparation method of the nano silicon cerium composite particles comprises the following steps: and (3) hydrolyzing sodium silicate to obtain silicic acid precipitate, mixing the silicic acid precipitate with cerium nitrate solution, adopting ammonia water as a precipitator to obtain composite particles of cerium hydroxide coated silicic acid, filtering, drying, calcining and the like to obtain nano silicon/cerium composite particles. The mass ratio of cerium to silicon in the scheme is adjusted, the calcination temperature rise rate, the heat preservation temperature and the heat preservation time are used for controlling the grain size of monocrystalline grains, and 10-80nm silicon-cerium composite grains can be prepared, and the grain size is measured by referring to a scanning electron microscope and is measured by a laser particle analyzer.
Preferably, the particle size of the nano silicon-cerium composite particles used for rough polishing of the silicon wafer is 50-60nm, and the particle size of the nano silicon-cerium composite particles used for fine polishing is 10-20nm.
In the polishing solution, the oxidant adopts one or more of sodium persulfate, potassium persulfate, hydrogen peroxide, perchlorate, hypochlorite, sodium dichloroisocyanurate, sodium nitrate, ammonium nitrate and organic peroxide.
The solid content of the nano-silicon-cerium composite particles is optimally between 2 and 10 percent, and the nano-silicon-cerium composite particles have optimal cutting efficiency and optimal cost control.
In the polishing solution, the complexing agent adopts one or more of citric acid, disodium ethylenediamine tetraacetate and sodium citrate.
In the polishing solution, the surfactant adopts one or more of ammonium polyacrylate and sodium polyacrylate.
In the polishing solution, the organic alkali adopts organic amine compounds. The organic alkali adopts organic amine compounds: one or more of ethanolamine, triethanolamine, tetramethylammonium hydroxide, and polyamino compounds.
The preparation method of the polishing solution comprises the following steps: under the stirring condition, sequentially adding an oxidant, a complexing agent, a surfactant and an organic base pH regulator into the nano-silicon-cerium composite particle aqueous solution, and supplementing deionized water to adjust the content so that the pH value of the polishing solution is 8-12; and then, fully mixing the particles and auxiliary materials by using a homogenizer, a sand mill, a ball mill and other equipment, and dispersing the mixture in the aqueous solution.
The preparation method of the silicon-cerium composite particles comprises the following steps: the method comprises the steps of hydrolyzing sodium silicate to obtain silicic acid precipitate, mixing the silicic acid precipitate with cerium nitrate solution, adopting ammonia water as a precipitating agent to obtain composite particles of cerium hydroxide coated silicic acid, filtering, drying, calcining and the like to obtain nano silicon/cerium composite particles, wherein the particle size can be controlled to be 10-80nm. The removal rate of the nano silicon-cerium composite polishing solution for polishing the semiconductor silicon wafer prepared by the preparation method of the nano silicon-cerium composite polishing solution for polishing the semiconductor silicon wafer is consistent with that of imported silica sol, and the nano silicon-cerium composite polishing solution can reach the surface roughness Ra required by the fine polishing of the semiconductor: 0.1-0.2nm; has wide application prospect in the fields of silicon substrate polishing and the like.
Example 1
Taking 28g of sodium silicate solution and 72 g of pure water, preparing hydrochloric acid with the concentration of 35%, adding the hydrochloric acid solution into the sodium silicate solution at the flow rate of 10ml/min, stirring while adding acid, and separating out the white precipitate by adopting a centrifuge when the pH value of the solution is 5-6 and the reaction is finished. The obtained precipitated silicic acid was stirred and mixed with 90g of pure water to form a dispersed suspension. 15 g of cerium nitrate solution was added to the silicic acid suspension, and 0.1 g of ammonium polyacrylate was added thereto, followed by sufficiently stirring for dissolution. 40% ammonia water was diluted to a concentration of 10%, and an ammonia water solution was added to the cerium salt-containing silicic acid suspension at a concentration of 5ml/min, and when the pH was raised to about 9, the reaction was completed, and silicic acid and cerium hydroxide were precipitated. The precipitate was separated from the water using a centrifuge and the precipitate was dried. And crushing the dried precipitate, calcining, heating to 800 ℃ at a temperature of 5 ℃ per minute, preserving heat for one hour, and cooling to room temperature along with a furnace to obtain the 10-20 nanometer silicon-cerium composite particles. Fig. 1 and 2 are electron micrographs of this example.
Preparing a nano silicon-cerium composite polishing solution for polishing a semiconductor silicon wafer: under the condition of mechanical stirring, 400g of silicon-cerium composite particles with the particle size of 10-20 nanometers are weighed and added into 1140g of deionized water; continuing stirring, and sequentially adding 60g of ammonium nitrate, 20g of sodium citrate, 180g of ammonium polyacrylate and 200g of triethanolamine; subsequently, the silicon-cerium composite particles and other auxiliary materials are thoroughly mixed and uniformly dispersed in the solution by the action of a sand mill. The mass fraction of the silicon-cerium composite particles is 20% based on the total mass of the polishing solution.
Polishing experiment: 1000g of the prepared polishing solution is diluted with deionized water according to the mass ratio of 1:9 to obtain 10kg of polishing solution, wherein the mass fraction of the silicon-cerium composite particles is 2%, and the polishing solution is used for polishing test of 6-inch monocrystalline silicon wafers: other polishing conditions and test results are shown in table 1 using a herud 9B polisher in combination with a sub 600 polishing pad.
Example 2
10g of sodium silicate solution is taken to 90g of pure water, 10% concentration citric acid is prepared, the citric acid solution is introduced into the sodium silicate solution at a flow rate of 1L/min, the solution is stirred while acid is added, until white precipitate is fully separated out, when the pH value of the solution is 5-6, the reaction is finished, and a centrifuge is used for separating the precipitate silicic acid from water. The obtained precipitated silicic acid was stirred and mixed with 90g of pure water to form a dispersed suspension. 7 g of cerium nitrate solution was added to the silicic acid suspension, and 0.1 g of ammonium polyacrylate was added thereto, followed by sufficiently stirring for dissolution. 40% ammonia water was diluted to a concentration of 10%, and an ammonia water solution was added to the cerium salt-containing silicic acid suspension at a concentration of 5ml/min, and when the pH was raised to about 9, the reaction was completed, and silicic acid and cerium hydroxide were precipitated. The precipitate was separated from the water using a centrifuge and the precipitate was dried. And crushing the dried precipitate, calcining, heating to 800 ℃ at a temperature of 5 ℃ per minute, preserving heat for one hour, and cooling to room temperature along with a furnace to obtain the 10-20 nanometer silicon-cerium composite particles.
Nanometer silicon-cerium composite polishing solution for polishing semiconductor silicon wafers: under the condition of mechanical stirring, 500g of silicon-cerium composite particles with the particle size of 10-20 nanometers are weighed and added into 1270g of deionized water; continuously stirring, and sequentially adding 30g of sodium nitrate, 10g of sodium citrate, 90g of sodium polyacrylate and 100g of ethanolamine; subsequently, the silicon-cerium composite particles and other auxiliary materials are thoroughly mixed and uniformly dispersed in the solution by the action of a sand mill. The mass fraction of the silicon-cerium composite particles is 25% based on the total mass of the polishing solution.
Polishing experiment: 2000g of the prepared polishing solution is diluted with deionized water according to the mass ratio of 1:4 to obtain 10kg of polishing solution, wherein the mass fraction of the silicon-cerium composite particles is 5%, and the polishing solution is used for polishing test of 6-inch monocrystalline silicon wafers: other polishing conditions and test results are shown in table 1 using a herud 9B polisher in combination with a sub 600 polishing pad.
Example 3
2g of sodium silicate solution is taken and 98 g of pure water is added, carbon dioxide gas is added into the sodium silicate solution at a flow rate of 1L/min, the mixture is stirred while the carbon dioxide gas is added, until white precipitate is fully separated out, and when the pH value of the solution is 5-6, the reaction is finished, and a centrifuge is used for separating the precipitated silicic acid from water. The obtained precipitated silicic acid was stirred and mixed with 90g of pure water to form a dispersed suspension. 1 g of cerium chloride solution was added to the silicic acid suspension, and 0.1 g of polyethylene glycol 2000 was added thereto, followed by stirring and dissolution. Sodium carbonate is used to prepare 10% concentration, and sodium carbonate solution is added into the silicic acid suspension containing cerium salt at a concentration of 5ml/min, when the pH value is raised to about 9, the reaction is complete, and silicic acid and cerium hydroxide are precipitated. The precipitate was separated from the water using a centrifuge and the precipitate was dried. And crushing the dried precipitate, calcining, heating to 850 ℃ at a temperature of 10 ℃ per minute, preserving heat for two hours, and cooling to room temperature along with a furnace to obtain the 50-60 nanometer silicon-cerium composite particles.
Nanometer silicon-cerium composite polishing solution for polishing semiconductor silicon wafers: under the condition of mechanical stirring, 400g of silicon-cerium composite particles with the particle size of 50-60 nanometers are weighed and added into 1140g of deionized water; continuously stirring, and sequentially adding 60g of hydrogen peroxide, 20g of sodium citrate, 180g of ammonium polyacrylate and 200g of triethanolamine; subsequently, the silicon-cerium composite particles and other auxiliary materials are thoroughly mixed and uniformly dispersed in the solution by the action of a sand mill. The mass fraction of the silicon-cerium composite particles is 20% based on the total mass of the polishing solution.
Polishing experiment: 1000g of the prepared polishing solution is diluted with deionized water according to the mass ratio of 1:9 to obtain 10kg of polishing solution, wherein the mass fraction of the silicon-cerium composite particles is 2%, and the polishing solution is used for polishing test of 6-inch monocrystalline silicon wafers: other polishing conditions and test results are shown in table 1 using a herud 9B polisher in combination with a sub 600 polishing pad.
Example 4
Nanometer silicon-cerium composite polishing solution for polishing semiconductor silicon wafers: under the condition of mechanical stirring, 600g of silicon-cerium composite particles with the particle size of 50-60 nanometers are weighed and added into 1170g of deionized water; continuously stirring, and sequentially adding 30g of hydrogen peroxide, 10g of sodium citrate, 90g of sodium polyacrylate and 100g of ethanolamine; subsequently, the silicon-cerium composite particles and other auxiliary materials are thoroughly mixed and uniformly dispersed in the solution by the action of a sand mill. The mass fraction of the silicon-cerium composite particles is 30% based on the total mass of the polishing solution.
Polishing experiment: 2000g of the prepared polishing solution is diluted with deionized water according to the mass ratio of 1:4 to obtain 10kg of polishing solution, wherein the mass fraction of the silicon-cerium composite particles is 6%, and the polishing solution is used for polishing test of 6-inch monocrystalline silicon wafers: other polishing conditions and test results are shown in table 1 using a herud 9B polisher in combination with a sub 600 polishing pad.
Comparative example 1
Preparing a polishing solution: under the condition of mechanical stirring, 1kg of imported silica sol (the mass fraction of which contains silica abrasive particles with the particle size of 20-30 nanometers is 40 percent), 700g of deionized water, 60g of hydrogen peroxide, 20g of sodium citrate and 180g of ammonium polyacrylate are weighed and mixed, and a proper amount of triethanolamine is added to ensure that the pH value is 11.5; subsequently, the silicon-cerium composite particles and other auxiliary materials are thoroughly mixed and uniformly dispersed in the solution by the action of a sand mill. The mass fraction of silica abrasive particles was about 20% based on the total mass of the polishing liquid.
Polishing experiment: 1000g of the prepared polishing solution is diluted with deionized water according to the mass ratio of 1:9 to obtain 10kg of polishing solution which is used for polishing test of 6 inch monocrystalline silicon wafers: other polishing conditions and test results are shown in table 1 using a herud 9B polisher in combination with a sub 600 polishing pad.
To ensure data reliability, three batches were polished, 9 wafers were polished for each example.
TABLE 1 polishing conditions and test results
| Polishing liquid | Pressure kg/cm 2 | Rotational speed r/min | pH value of | Material removal efficiency (polishing efficiency) μm/min | Roughness nm |
| Example 1 (Fine polishing) | 0.25 | 55 | 11.5 | 0.25 | 0.183 |
| Example 2 (Fine polishing) | 0.25 | 55 | 11.3 | 0.31 | 0.198 |
| Example 3 (coarse polishing) | 0.25 | 55 | 11.5 | 0.35 | 0.213 |
| Example 4 (coarse polishing) | 0.25 | 55 | 11.3 | 0.32 | 0.226 |
| Comparative example 1 | 0.25 | 55 | 11.5 | 0.22 | 0.332 |
The above detailed description is intended to illustrate the present invention by way of example only and not to limit the invention to the particular embodiments disclosed, but to limit the invention to the precise embodiments disclosed, and any modifications, equivalents, improvements, etc. that fall within the spirit and scope of the invention as defined by the appended claims.
Claims (10)
1. A preparation method of nano silicon cerium composite polishing solution for polishing a semiconductor silicon wafer comprises the following steps:
under the stirring condition, sequentially adding an oxidant, an organic complexing agent, a surfactant and an organic alkali pH regulator into the nano-silicon-cerium composite particle aqueous solution, and supplementing deionized water to adjust the content so that the pH value of the polishing solution is in the range of 8-12; and then fully mixing the particles and auxiliary materials by using a homogenizer or a sand mill ball mill device, and dispersing the mixture in an aqueous solution, wherein the weight percentages of the components are as follows:
1 to 30 percent of nano silicon cerium composite particles,
0.01 to 1 percent of oxidant,
0.01 to 0.5 percent of organic complexing agent,
0.1 to 2 percent of surfactant,
0.1 to 2 percent of pH regulator organic alkali,
the balance of deionized water;
the nano silicon-cerium composite particle aqueous solution is obtained by adding nano silicon-cerium composite particles into deionized water and stirring.
2. The method for preparing the nano-silicon-cerium composite polishing solution for polishing a semiconductor silicon wafer according to claim 1, which is characterized in that: the particle size of the nano-silicon-cerium composite particles is 10-80nm.
3. The method for preparing the nano-silicon-cerium composite polishing solution for polishing a semiconductor silicon wafer according to claim 2, which is characterized in that: the silicon wafer is roughly polished with the grain size of 50-60nm of nano silicon-cerium composite grains, and finely polished with the grain size of 10-20nm of nano silicon-cerium composite grains.
4. The method for preparing the nano-silicon-cerium composite polishing solution for polishing a semiconductor silicon wafer according to claim 1, which is characterized in that: the oxidant adopts one or more of sodium persulfate, potassium persulfate, hydrogen peroxide, perchlorate, hypochlorite, sodium dichloroisocyanurate, sodium nitrate, ammonium nitrate and organic peroxide.
5. The method for preparing the nano-silicon-cerium composite polishing solution for polishing a semiconductor silicon wafer according to claim 1, which is characterized in that: the complexing agent adopts one or more of citric acid, disodium ethylenediamine tetraacetate and sodium citrate.
6. The method for preparing the nano-silicon-cerium composite polishing solution for polishing a semiconductor silicon wafer according to claim 1, which is characterized in that: the surfactant adopts one or more of ammonium polyacrylate and sodium polyacrylate.
7. The method for preparing the nano-silicon-cerium composite polishing solution for polishing a semiconductor silicon wafer according to claim 1, which is characterized in that: the pH regulator organic base adopts organic amine compounds: one or more of ethanolamine, triethanolamine, tetramethylammonium hydroxide, and polyamino compounds.
8. The method for preparing the nano-silicon-cerium composite polishing solution for polishing a semiconductor silicon wafer according to claim 1, which is characterized in that: the solid content of the nano silicon-cerium composite particles is 2-10%.
9. The method for preparing the nano-silicon-cerium composite polishing solution for polishing a semiconductor silicon wafer according to claim 1, which is characterized in that: the nano silicon cerium composite particles are prepared by the following steps:
s1, dissolving sodium silicate in pure water to prepare a sodium silicate solution, wherein the concentration of the sodium silicate is 1-40%;
s2, preparing an acid solution, wherein the concentration of the acid solution is 0.1-35%;
s3, dropwise adding the acid solution obtained in the step S2 into the solution S1 under stirring, and reacting to generate silicic acid precipitate;
s4, filtering the precipitate obtained in the step S3, washing with water to obtain silicic acid, and preparing the silicic acid and pure water into suspension;
s5, dissolving cerium salt in the silicic acid suspension generated in the step S4, and adding a surfactant, wherein the concentration of the cerium salt is 1-20%;
s6, dropwise adding an alkaline solution into the solution generated in the step S5 to form coprecipitation of silicic acid and cerium hydroxide;
s7, filtering, drying and calcining the precipitate generated in the step S6 to obtain silicon-cerium composite particles;
in the step S5, cerium salt in the cerium salt is selected from cerium carbonate, cerium acetate, cerium oxalate, cerium nitrate or cerium chloride, and the surfactant is one or more of cetyl trimethyl ammonium bromide, polyethylene glycol, stearic acid, sodium polyacrylate, ammonium polyacrylate and quaternary ammonium compound;
in the step S6, the alkaline solution is selected from ammonia water, urea, ammonium bicarbonate, sodium carbonate or sodium bicarbonate.
10. The method for preparing the nano-silicon-cerium composite polishing solution for polishing a semiconductor silicon wafer according to claim 9, wherein the method comprises the following steps: in step S2, the acid solution is an inorganic acid, such as sulfuric acid, nitric acid, and hydrochloric acid; or the acid solution is organic acid such as oxalic acid and citric acid; or the acid solution is carbonic acid generated by introducing carbon dioxide gas; the drying mode in the step S7 is selected from hot air drying, infrared drying, microwave drying or spray drying; the calcining equipment is a muffle furnace, a shuttle furnace, a trolley furnace, a lifting furnace, a push plate furnace or a roller furnace; the calcination temperature is 400-1100 ℃.
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