SG11201707998TA - Method for atomic layer etching - Google Patents
Method for atomic layer etchingInfo
- Publication number
- SG11201707998TA SG11201707998TA SG11201707998TA SG11201707998TA SG11201707998TA SG 11201707998T A SG11201707998T A SG 11201707998TA SG 11201707998T A SG11201707998T A SG 11201707998TA SG 11201707998T A SG11201707998T A SG 11201707998TA SG 11201707998T A SG11201707998T A SG 11201707998TA
- Authority
- SG
- Singapore
- Prior art keywords
- atomic layer
- layer etching
- etching
- atomic
- layer
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
- H01J37/32963—End-point detection
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
- H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
- H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
- H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562139795P | 2015-03-30 | 2015-03-30 | |
| PCT/US2016/024661 WO2016160778A1 (en) | 2015-03-30 | 2016-03-29 | Method for atomic layer etching |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201707998TA true SG11201707998TA (en) | 2017-10-30 |
Family
ID=55745829
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201707998TA SG11201707998TA (en) | 2015-03-30 | 2016-03-29 | Method for atomic layer etching |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9881807B2 (https=) |
| JP (1) | JP6532066B2 (https=) |
| KR (1) | KR102510737B1 (https=) |
| CN (1) | CN107431011B (https=) |
| SG (1) | SG11201707998TA (https=) |
| TW (1) | TWI621177B (https=) |
| WO (1) | WO2016160778A1 (https=) |
Families Citing this family (43)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12444651B2 (en) | 2009-08-04 | 2025-10-14 | Novellus Systems, Inc. | Tungsten feature fill with nucleation inhibition |
| US10256108B2 (en) * | 2016-03-01 | 2019-04-09 | Lam Research Corporation | Atomic layer etching of AL2O3 using a combination of plasma and vapor treatments |
| US10280519B2 (en) | 2016-12-09 | 2019-05-07 | Asm Ip Holding B.V. | Thermal atomic layer etching processes |
| US10566212B2 (en) | 2016-12-19 | 2020-02-18 | Lam Research Corporation | Designer atomic layer etching |
| US10283319B2 (en) * | 2016-12-22 | 2019-05-07 | Asm Ip Holding B.V. | Atomic layer etching processes |
| US10692724B2 (en) | 2016-12-23 | 2020-06-23 | Lam Research Corporation | Atomic layer etching methods and apparatus |
| US9779956B1 (en) * | 2017-02-06 | 2017-10-03 | Lam Research Corporation | Hydrogen activated atomic layer etching |
| US10134600B2 (en) * | 2017-02-06 | 2018-11-20 | Lam Research Corporation | Dielectric contact etch |
| US11469079B2 (en) * | 2017-03-14 | 2022-10-11 | Lam Research Corporation | Ultrahigh selective nitride etch to form FinFET devices |
| US10483118B2 (en) * | 2017-05-11 | 2019-11-19 | Tokyo Electron Limited | Etching method |
| US10796912B2 (en) | 2017-05-16 | 2020-10-06 | Lam Research Corporation | Eliminating yield impact of stochastics in lithography |
| US10504742B2 (en) * | 2017-05-31 | 2019-12-10 | Asm Ip Holding B.V. | Method of atomic layer etching using hydrogen plasma |
| US10763083B2 (en) | 2017-10-06 | 2020-09-01 | Lam Research Corporation | High energy atomic layer etching |
| JP6987172B2 (ja) * | 2017-11-28 | 2021-12-22 | 東京エレクトロン株式会社 | エッチング方法およびエッチング装置 |
| JP2019102483A (ja) * | 2017-11-28 | 2019-06-24 | 東京エレクトロン株式会社 | エッチング方法およびエッチング装置 |
| WO2019190781A1 (en) | 2018-03-30 | 2019-10-03 | Lam Research Corporation | Atomic layer etching and smoothing of refractory metals and other high surface binding energy materials |
| WO2019199922A1 (en) * | 2018-04-13 | 2019-10-17 | Mattson Technology, Inc. | Processing of workpieces with reactive species generated using alkyl halide |
| GB201810387D0 (en) * | 2018-06-25 | 2018-08-08 | Spts Technologies Ltd | Method of plasma etching |
| US10847375B2 (en) * | 2018-06-26 | 2020-11-24 | Lam Research Corporation | Selective atomic layer etching |
| US10720337B2 (en) * | 2018-07-20 | 2020-07-21 | Asm Ip Holding B.V. | Pre-cleaning for etching of dielectric materials |
| US11688586B2 (en) * | 2018-08-30 | 2023-06-27 | Tokyo Electron Limited | Method and apparatus for plasma processing |
| JP7737789B2 (ja) | 2019-07-18 | 2025-09-11 | エーエスエム・アイピー・ホールディング・ベー・フェー | 半導体処理システム用シャワーヘッドデバイス |
| US11043362B2 (en) * | 2019-09-17 | 2021-06-22 | Tokyo Electron Limited | Plasma processing apparatuses including multiple electron sources |
| JP7114554B2 (ja) * | 2019-11-22 | 2022-08-08 | 株式会社Kokusai Electric | 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム |
| US11574813B2 (en) | 2019-12-10 | 2023-02-07 | Asm Ip Holding B.V. | Atomic layer etching |
| CN111370308B (zh) * | 2020-02-18 | 2023-03-21 | 中国科学院微电子研究所 | 一种刻蚀方法及系统、刻蚀控制装置、电子器件及设备 |
| WO2021178399A1 (en) | 2020-03-06 | 2021-09-10 | Lam Research Corporation | Atomic layer etching of molybdenum |
| JP7394665B2 (ja) * | 2020-03-11 | 2023-12-08 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
| US12176392B2 (en) * | 2020-06-25 | 2024-12-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device with silicide gate fill structure |
| JP7174016B2 (ja) * | 2020-07-16 | 2022-11-17 | 株式会社Kokusai Electric | 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム |
| CN112366135B (zh) * | 2020-10-26 | 2024-06-21 | 北京北方华创微电子装备有限公司 | 一种硅原子层刻蚀方法 |
| WO2022169509A1 (en) | 2021-02-03 | 2022-08-11 | Lam Research Corporation | Etch selectivity control in atomic layer etching |
| JP7511501B2 (ja) * | 2021-02-10 | 2024-07-05 | 東京エレクトロン株式会社 | プラズマ処理装置及び監視装置 |
| KR102654170B1 (ko) * | 2021-02-17 | 2024-04-04 | 대전대학교 산학협력단 | 액상 전구체를 이용한 원자층 식각 방법 |
| US20220301887A1 (en) * | 2021-03-16 | 2022-09-22 | Applied Materials, Inc. | Ruthenium etching process |
| US11664195B1 (en) | 2021-11-11 | 2023-05-30 | Velvetch Llc | DC plasma control for electron enhanced material processing |
| US11688588B1 (en) | 2022-02-09 | 2023-06-27 | Velvetch Llc | Electron bias control signals for electron enhanced material processing |
| JP7789604B2 (ja) | 2022-03-24 | 2025-12-22 | キオクシア株式会社 | エッチング方法、エッチング装置、半導体装置の製造方法及び原版の製造方法 |
| CN117157734A (zh) | 2022-03-29 | 2023-12-01 | 株式会社国际电气 | 衬底处理方法、半导体器件的制造方法、程序及衬底处理装置 |
| US11869747B1 (en) | 2023-01-04 | 2024-01-09 | Velvetch Llc | Atomic layer etching by electron wavefront |
| JP2024098769A (ja) | 2023-01-11 | 2024-07-24 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
| CN119517740A (zh) * | 2023-08-24 | 2025-02-25 | 中国科学院微电子研究所 | 一种等离子体增强型原子层刻蚀方法 |
| US20250201569A1 (en) * | 2023-12-14 | 2025-06-19 | Applied Materials, Inc. | Etching substrates using vapor adsorption |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6630201B2 (en) * | 2001-04-05 | 2003-10-07 | Angstron Systems, Inc. | Adsorption process for atomic layer deposition |
| US20110139748A1 (en) * | 2009-12-15 | 2011-06-16 | University Of Houston | Atomic layer etching with pulsed plasmas |
| KR101080604B1 (ko) | 2010-02-09 | 2011-11-04 | 성균관대학교산학협력단 | 원자층 식각 장치 및 이를 이용한 식각 방법 |
| US9076646B2 (en) | 2010-04-15 | 2015-07-07 | Lam Research Corporation | Plasma enhanced atomic layer deposition with pulsed plasma exposure |
| US9793126B2 (en) * | 2010-08-04 | 2017-10-17 | Lam Research Corporation | Ion to neutral control for wafer processing with dual plasma source reactor |
| KR101380835B1 (ko) * | 2011-07-22 | 2014-04-04 | 성균관대학교산학협력단 | 그래핀의 원자층 식각 방법 |
| US20130084707A1 (en) | 2011-09-30 | 2013-04-04 | Tokyo Electron Limited | Dry cleaning method for recovering etch process condition |
| CN103117216B (zh) * | 2011-11-17 | 2015-08-05 | 中芯国际集成电路制造(上海)有限公司 | 避免浅沟槽隔离结构产生缺角的半导体器件的制作方法 |
| US9330899B2 (en) * | 2012-11-01 | 2016-05-03 | Asm Ip Holding B.V. | Method of depositing thin film |
-
2016
- 2016-03-29 JP JP2017551300A patent/JP6532066B2/ja active Active
- 2016-03-29 WO PCT/US2016/024661 patent/WO2016160778A1/en not_active Ceased
- 2016-03-29 KR KR1020177030041A patent/KR102510737B1/ko active Active
- 2016-03-29 US US15/083,363 patent/US9881807B2/en active Active
- 2016-03-29 CN CN201680020214.2A patent/CN107431011B/zh active Active
- 2016-03-29 SG SG11201707998TA patent/SG11201707998TA/en unknown
- 2016-03-30 TW TW105109945A patent/TWI621177B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| CN107431011A (zh) | 2017-12-01 |
| TWI621177B (zh) | 2018-04-11 |
| JP6532066B2 (ja) | 2019-06-19 |
| CN107431011B (zh) | 2021-08-24 |
| WO2016160778A1 (en) | 2016-10-06 |
| US20160293432A1 (en) | 2016-10-06 |
| JP2018510515A (ja) | 2018-04-12 |
| US9881807B2 (en) | 2018-01-30 |
| KR102510737B1 (ko) | 2023-03-15 |
| KR20180036646A (ko) | 2018-04-09 |
| TW201643958A (zh) | 2016-12-16 |
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