KR102510737B1 - 원자층 에칭 방법 - Google Patents

원자층 에칭 방법 Download PDF

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KR102510737B1
KR102510737B1 KR1020177030041A KR20177030041A KR102510737B1 KR 102510737 B1 KR102510737 B1 KR 102510737B1 KR 1020177030041 A KR1020177030041 A KR 1020177030041A KR 20177030041 A KR20177030041 A KR 20177030041A KR 102510737 B1 KR102510737 B1 KR 102510737B1
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South Korea
Prior art keywords
substrate
etchant
plasma processing
processing system
power
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KR1020177030041A
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Korean (ko)
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KR20180036646A (ko
Inventor
알록 란잔
소남 셰르파
밍메이 왕
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도쿄엘렉트론가부시키가이샤
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    • H01L21/3065—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • H01L21/31116—
    • H01L21/32136—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
KR1020177030041A 2015-03-30 2016-03-29 원자층 에칭 방법 Active KR102510737B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201562139795P 2015-03-30 2015-03-30
US62/139,795 2015-03-30
PCT/US2016/024661 WO2016160778A1 (en) 2015-03-30 2016-03-29 Method for atomic layer etching

Publications (2)

Publication Number Publication Date
KR20180036646A KR20180036646A (ko) 2018-04-09
KR102510737B1 true KR102510737B1 (ko) 2023-03-15

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KR1020177030041A Active KR102510737B1 (ko) 2015-03-30 2016-03-29 원자층 에칭 방법

Country Status (7)

Country Link
US (1) US9881807B2 (https=)
JP (1) JP6532066B2 (https=)
KR (1) KR102510737B1 (https=)
CN (1) CN107431011B (https=)
SG (1) SG11201707998TA (https=)
TW (1) TWI621177B (https=)
WO (1) WO2016160778A1 (https=)

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US10280519B2 (en) 2016-12-09 2019-05-07 Asm Ip Holding B.V. Thermal atomic layer etching processes
US10566212B2 (en) 2016-12-19 2020-02-18 Lam Research Corporation Designer atomic layer etching
US10283319B2 (en) * 2016-12-22 2019-05-07 Asm Ip Holding B.V. Atomic layer etching processes
US10692724B2 (en) 2016-12-23 2020-06-23 Lam Research Corporation Atomic layer etching methods and apparatus
US9779956B1 (en) * 2017-02-06 2017-10-03 Lam Research Corporation Hydrogen activated atomic layer etching
US10134600B2 (en) * 2017-02-06 2018-11-20 Lam Research Corporation Dielectric contact etch
US11469079B2 (en) * 2017-03-14 2022-10-11 Lam Research Corporation Ultrahigh selective nitride etch to form FinFET devices
US10483118B2 (en) * 2017-05-11 2019-11-19 Tokyo Electron Limited Etching method
US10796912B2 (en) 2017-05-16 2020-10-06 Lam Research Corporation Eliminating yield impact of stochastics in lithography
US10504742B2 (en) * 2017-05-31 2019-12-10 Asm Ip Holding B.V. Method of atomic layer etching using hydrogen plasma
US10763083B2 (en) 2017-10-06 2020-09-01 Lam Research Corporation High energy atomic layer etching
JP6987172B2 (ja) * 2017-11-28 2021-12-22 東京エレクトロン株式会社 エッチング方法およびエッチング装置
JP2019102483A (ja) * 2017-11-28 2019-06-24 東京エレクトロン株式会社 エッチング方法およびエッチング装置
WO2019190781A1 (en) 2018-03-30 2019-10-03 Lam Research Corporation Atomic layer etching and smoothing of refractory metals and other high surface binding energy materials
WO2019199922A1 (en) * 2018-04-13 2019-10-17 Mattson Technology, Inc. Processing of workpieces with reactive species generated using alkyl halide
GB201810387D0 (en) * 2018-06-25 2018-08-08 Spts Technologies Ltd Method of plasma etching
US10847375B2 (en) * 2018-06-26 2020-11-24 Lam Research Corporation Selective atomic layer etching
US10720337B2 (en) * 2018-07-20 2020-07-21 Asm Ip Holding B.V. Pre-cleaning for etching of dielectric materials
US11688586B2 (en) * 2018-08-30 2023-06-27 Tokyo Electron Limited Method and apparatus for plasma processing
JP7737789B2 (ja) 2019-07-18 2025-09-11 エーエスエム・アイピー・ホールディング・ベー・フェー 半導体処理システム用シャワーヘッドデバイス
US11043362B2 (en) * 2019-09-17 2021-06-22 Tokyo Electron Limited Plasma processing apparatuses including multiple electron sources
JP7114554B2 (ja) * 2019-11-22 2022-08-08 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム
US11574813B2 (en) 2019-12-10 2023-02-07 Asm Ip Holding B.V. Atomic layer etching
CN111370308B (zh) * 2020-02-18 2023-03-21 中国科学院微电子研究所 一种刻蚀方法及系统、刻蚀控制装置、电子器件及设备
WO2021178399A1 (en) 2020-03-06 2021-09-10 Lam Research Corporation Atomic layer etching of molybdenum
JP7394665B2 (ja) * 2020-03-11 2023-12-08 東京エレクトロン株式会社 基板処理方法及び基板処理装置
US12176392B2 (en) * 2020-06-25 2024-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with silicide gate fill structure
JP7174016B2 (ja) * 2020-07-16 2022-11-17 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム
CN112366135B (zh) * 2020-10-26 2024-06-21 北京北方华创微电子装备有限公司 一种硅原子层刻蚀方法
WO2022169509A1 (en) 2021-02-03 2022-08-11 Lam Research Corporation Etch selectivity control in atomic layer etching
JP7511501B2 (ja) * 2021-02-10 2024-07-05 東京エレクトロン株式会社 プラズマ処理装置及び監視装置
KR102654170B1 (ko) * 2021-02-17 2024-04-04 대전대학교 산학협력단 액상 전구체를 이용한 원자층 식각 방법
US20220301887A1 (en) * 2021-03-16 2022-09-22 Applied Materials, Inc. Ruthenium etching process
US11664195B1 (en) 2021-11-11 2023-05-30 Velvetch Llc DC plasma control for electron enhanced material processing
US11688588B1 (en) 2022-02-09 2023-06-27 Velvetch Llc Electron bias control signals for electron enhanced material processing
JP7789604B2 (ja) 2022-03-24 2025-12-22 キオクシア株式会社 エッチング方法、エッチング装置、半導体装置の製造方法及び原版の製造方法
CN117157734A (zh) 2022-03-29 2023-12-01 株式会社国际电气 衬底处理方法、半导体器件的制造方法、程序及衬底处理装置
US11869747B1 (en) 2023-01-04 2024-01-09 Velvetch Llc Atomic layer etching by electron wavefront
JP2024098769A (ja) 2023-01-11 2024-07-24 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
CN119517740A (zh) * 2023-08-24 2025-02-25 中国科学院微电子研究所 一种等离子体增强型原子层刻蚀方法
US20250201569A1 (en) * 2023-12-14 2025-06-19 Applied Materials, Inc. Etching substrates using vapor adsorption

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JP2012529777A (ja) 2009-12-15 2012-11-22 ユニバーシティ オブ ヒューストン システム パルスプラズマを用いた原子層エッチング
US20140113457A1 (en) 2010-04-15 2014-04-24 Lam Research Corporation Plasma enhanced atomic layer deposition with pulsed plasma exposure
US20140206192A1 (en) 2011-07-22 2014-07-24 Research & Business Foundation Sungkyunkwan University Method for etching atomic layer of graphine
US20150083582A1 (en) 2010-08-04 2015-03-26 Lam Research Corporation Ion to neutral control for wafer processing with dual plasma source reactor

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KR101080604B1 (ko) 2010-02-09 2011-11-04 성균관대학교산학협력단 원자층 식각 장치 및 이를 이용한 식각 방법
US20130084707A1 (en) 2011-09-30 2013-04-04 Tokyo Electron Limited Dry cleaning method for recovering etch process condition
CN103117216B (zh) * 2011-11-17 2015-08-05 中芯国际集成电路制造(上海)有限公司 避免浅沟槽隔离结构产生缺角的半导体器件的制作方法
US9330899B2 (en) * 2012-11-01 2016-05-03 Asm Ip Holding B.V. Method of depositing thin film

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JP2012529777A (ja) 2009-12-15 2012-11-22 ユニバーシティ オブ ヒューストン システム パルスプラズマを用いた原子層エッチング
US20140113457A1 (en) 2010-04-15 2014-04-24 Lam Research Corporation Plasma enhanced atomic layer deposition with pulsed plasma exposure
US20150083582A1 (en) 2010-08-04 2015-03-26 Lam Research Corporation Ion to neutral control for wafer processing with dual plasma source reactor
US20140206192A1 (en) 2011-07-22 2014-07-24 Research & Business Foundation Sungkyunkwan University Method for etching atomic layer of graphine

Also Published As

Publication number Publication date
CN107431011A (zh) 2017-12-01
TWI621177B (zh) 2018-04-11
JP6532066B2 (ja) 2019-06-19
CN107431011B (zh) 2021-08-24
SG11201707998TA (en) 2017-10-30
WO2016160778A1 (en) 2016-10-06
US20160293432A1 (en) 2016-10-06
JP2018510515A (ja) 2018-04-12
US9881807B2 (en) 2018-01-30
KR20180036646A (ko) 2018-04-09
TW201643958A (zh) 2016-12-16

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