SG11201505836WA - Semiconductor device inspection device and semiconductor device inspection method - Google Patents
Semiconductor device inspection device and semiconductor device inspection methodInfo
- Publication number
- SG11201505836WA SG11201505836WA SG11201505836WA SG11201505836WA SG11201505836WA SG 11201505836W A SG11201505836W A SG 11201505836WA SG 11201505836W A SG11201505836W A SG 11201505836WA SG 11201505836W A SG11201505836W A SG 11201505836WA SG 11201505836W A SG11201505836W A SG 11201505836WA
- Authority
- SG
- Singapore
- Prior art keywords
- semiconductor device
- device inspection
- inspection method
- inspection
- semiconductor
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/265—Contactless testing
- G01R31/2656—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R23/00—Arrangements for measuring frequencies; Arrangements for analysing frequency spectra
- G01R23/16—Spectrum analysis; Fourier analysis
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/302—Contactless testing
- G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
- G01R31/311—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation of integrated circuits
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
- H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2201/00—Features of devices classified in G01N21/00
- G01N2201/12—Circuits of general importance; Signal processing
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- General Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Pathology (AREA)
- Immunology (AREA)
- General Health & Medical Sciences (AREA)
- Biochemistry (AREA)
- Analytical Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Tests Of Electronic Circuits (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Measuring Leads Or Probes (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013018683 | 2013-02-01 | ||
| PCT/JP2014/052145 WO2014119675A1 (ja) | 2013-02-01 | 2014-01-30 | 半導体デバイス検査装置及び半導体デバイス検査方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201505836WA true SG11201505836WA (en) | 2015-09-29 |
Family
ID=51262384
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201505836WA SG11201505836WA (en) | 2013-02-01 | 2014-01-30 | Semiconductor device inspection device and semiconductor device inspection method |
| SG11201505833XA SG11201505833XA (en) | 2013-02-01 | 2014-01-30 | Semiconductor device inspection device and semiconductor device inspection method |
| SG10201604835TA SG10201604835TA (en) | 2013-02-01 | 2014-01-30 | Semiconductor device inspection device and semiconductor device inspection method |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201505833XA SG11201505833XA (en) | 2013-02-01 | 2014-01-30 | Semiconductor device inspection device and semiconductor device inspection method |
| SG10201604835TA SG10201604835TA (en) | 2013-02-01 | 2014-01-30 | Semiconductor device inspection device and semiconductor device inspection method |
Country Status (5)
| Country | Link |
|---|---|
| US (4) | US9618563B2 (https=) |
| JP (3) | JP5744353B2 (https=) |
| KR (5) | KR101923846B1 (https=) |
| SG (3) | SG11201505836WA (https=) |
| WO (2) | WO2014119676A1 (https=) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101923846B1 (ko) * | 2013-02-01 | 2018-11-29 | 하마마츠 포토닉스 가부시키가이샤 | 반도체 디바이스 검사 장치 및 반도체 디바이스 검사 방법 |
| JP2016109673A (ja) * | 2014-10-16 | 2016-06-20 | ディーシージー システムズ、 インコーポレイテッドＤｃｇ Ｓｙｓｔｅｍｓ Ｉｎｃ． | レーザボルテージイメージングのシステム及び方法 |
| JP6714485B2 (ja) | 2016-09-28 | 2020-06-24 | 浜松ホトニクス株式会社 | 半導体デバイス検査方法及び半導体デバイス検査装置 |
| JP2018072290A (ja) * | 2016-11-04 | 2018-05-10 | ルネサスエレクトロニクス株式会社 | 故障箇所特定装置および故障箇所特定方法 |
| KR102440165B1 (ko) * | 2018-06-28 | 2022-09-06 | 주식회사 히타치하이테크 | 반도체 검사 장치 |
| US11011435B2 (en) * | 2018-11-20 | 2021-05-18 | Asm Technology Singapore Pte Ltd | Apparatus and method inspecting bonded semiconductor dice |
| JP7398449B2 (ja) * | 2019-05-31 | 2023-12-14 | 浜松ホトニクス株式会社 | 半導体デバイス検査方法及び半導体デバイス検査装置 |
| JP7164488B2 (ja) * | 2019-05-31 | 2022-11-01 | 浜松ホトニクス株式会社 | 半導体デバイス検査方法及び半導体デバイス検査装置 |
| JP6824351B1 (ja) * | 2019-09-13 | 2021-02-03 | 浜松ホトニクス株式会社 | 半導体試料の検査装置及び検査方法 |
| US11204383B2 (en) * | 2019-09-30 | 2021-12-21 | Formfactor, Inc. | Methods for maintaining gap spacing between an optical probe of a probe system and an optical device of a device under test, and probe systems that perform the methods |
| US11133864B1 (en) * | 2020-04-24 | 2021-09-28 | Ciena Corporation | Measurement of crosstalk |
| KR102425048B1 (ko) * | 2020-12-24 | 2022-07-27 | 큐알티 주식회사 | 반도체 소자 테스트용 빔 검사 장치, 및 빔 검사 방법 |
| US12546805B2 (en) * | 2021-05-21 | 2026-02-10 | Hitachi High-Tech Corporation | Sample inspection apparatus |
| KR102586199B1 (ko) * | 2021-10-21 | 2023-10-06 | 큐알티 주식회사 | 전력 반도체 소자의 검사 방법, 및 이를 위한 검사 시스템 |
| KR102418633B1 (ko) * | 2021-12-22 | 2022-07-07 | 큐알티 주식회사 | 반도체 소자의 방사선 평가 방법, 및 반도체 소자의 방사선 평가 시스템 |
| KR102518783B1 (ko) * | 2022-06-23 | 2023-04-06 | 큐알티 주식회사 | 적응적 변형이 가능한 빔 제어기, 이를 이용한 반도체 소자의 테스트 장치, 및 이를 이용한 반도체 소자의 테스트 방법 |
Family Cites Families (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01169862A (ja) | 1987-12-25 | 1989-07-05 | Hitachi Ltd | 荷電粒子線装置 |
| JPH0513522A (ja) | 1991-07-04 | 1993-01-22 | Advantest Corp | 電荷光学プローブ |
| JPH0547883A (ja) * | 1991-08-12 | 1993-02-26 | Nippon Telegr & Teleph Corp <Ntt> | 集積回路の回路試験装置および回路試験方法 |
| JP3154531B2 (ja) | 1991-12-18 | 2001-04-09 | 富士通株式会社 | 信号測定装置 |
| JPH06201803A (ja) | 1992-12-28 | 1994-07-22 | Fujitsu Ltd | 信号波形測定装置及び信号波形測定方法 |
| JPH07134147A (ja) | 1993-11-10 | 1995-05-23 | Fujitsu Ltd | 信号波形測定装置 |
| SE502886C2 (sv) | 1994-06-13 | 1996-02-12 | Whirlpool Europ | Styrförfarande för en mikrovågsugn, mikrovågsugn och dess användning för tillagning/uppvärmning av en matvara enligt styrförfarandet |
| GB9411908D0 (en) | 1994-06-14 | 1994-08-03 | John Heyer Paper Ltd | Web monitoring for paper machines |
| JP3500215B2 (ja) | 1995-02-07 | 2004-02-23 | 浜松ホトニクス株式会社 | 電圧測定装置 |
| JP3500216B2 (ja) | 1995-02-07 | 2004-02-23 | 浜松ホトニクス株式会社 | 電圧測定装置 |
| DE19511869B4 (de) | 1995-03-31 | 2004-02-26 | Geiler, Hans-Dieter, Dr. | Verfahren und Anordnung zur Responseanalyse von Halbleitermaterialien mit optischer Anregung |
| KR960035045U (ko) | 1995-04-13 | 1996-11-21 | 김헌영 | 파이프 단열재의 마감처리에 사용되는 포장재 |
| US5905577A (en) | 1997-03-15 | 1999-05-18 | Schlumberger Technologies, Inc. | Dual-laser voltage probing of IC's |
| JPH11271363A (ja) | 1998-03-19 | 1999-10-08 | Ando Electric Co Ltd | 電気光学サンプリングオシロスコープ |
| US6252222B1 (en) | 2000-01-13 | 2001-06-26 | Schlumberger Technologies, Inc. | Differential pulsed laser beam probing of integrated circuits |
| US6976234B2 (en) * | 2003-01-13 | 2005-12-13 | Credence Systems Corporation | Apparatus and method for measuring characteristics of dynamic electrical signals in integrated circuits |
| JP2005134196A (ja) | 2003-10-29 | 2005-05-26 | Nec Electronics Corp | 非破壊解析方法及び非破壊解析装置 |
| KR100674972B1 (ko) | 2005-05-24 | 2007-01-29 | 삼성전자주식회사 | 반도체 소자의 펄스 특성 측정 시스템 및 측정 방법 |
| US7659981B2 (en) | 2005-08-26 | 2010-02-09 | Dcg Systems, Inc. | Apparatus and method for probing integrated circuits using polarization difference probing |
| US7733100B2 (en) | 2005-08-26 | 2010-06-08 | Dcg Systems, Inc. | System and method for modulation mapping |
| JP5340524B2 (ja) | 2006-03-23 | 2013-11-13 | 浜松ホトニクス株式会社 | 放射線検出器及び放射線検出方法 |
| US7999949B2 (en) * | 2006-04-24 | 2011-08-16 | Raintree Scientific Instruments (Shanghai) Corporation | Spectroscopic ellipsometers |
| JP5181989B2 (ja) | 2008-10-03 | 2013-04-10 | ソニー株式会社 | 短パルス光源装置、レーザ駆動方法、光ピックアップ及び光ディスク装置 |
| SG10201401887YA (en) | 2009-05-01 | 2014-06-27 | Dcg Systems Inc | Systems and method for laser voltage imaging state mapping |
| JP2011075441A (ja) * | 2009-09-30 | 2011-04-14 | Hamamatsu Photonics Kk | 半導体デバイス故障解析装置 |
| US8309883B2 (en) | 2010-05-20 | 2012-11-13 | Ipg Photonics Corporation | Methods and systems for laser processing of materials |
| US8564301B2 (en) | 2010-11-08 | 2013-10-22 | Semiconductor Components Industries, Llc | Device and method for determining capacitance as a function of voltage |
| JP5894745B2 (ja) * | 2011-05-31 | 2016-03-30 | 浜松ホトニクス株式会社 | 集積回路検査装置 |
| JP6166032B2 (ja) * | 2012-11-06 | 2017-07-19 | 浜松ホトニクス株式会社 | 半導体デバイス検査装置及び半導体デバイス検査方法 |
| KR101923846B1 (ko) | 2013-02-01 | 2018-11-29 | 하마마츠 포토닉스 가부시키가이샤 | 반도체 디바이스 검사 장치 및 반도체 디바이스 검사 방법 |
| JP6283501B2 (ja) | 2013-11-12 | 2018-02-21 | 浜松ホトニクス株式会社 | 周波数解析装置及び周波数解析方法 |
| JP6283507B2 (ja) * | 2013-11-29 | 2018-02-21 | 浜松ホトニクス株式会社 | 半導体デバイス計測装置及び半導体デバイス計測方法 |
| JP6407555B2 (ja) | 2014-04-24 | 2018-10-17 | 浜松ホトニクス株式会社 | 画像生成装置及び画像生成方法 |
| JP6484051B2 (ja) * | 2015-02-10 | 2019-03-13 | 浜松ホトニクス株式会社 | 検査方法及び検査装置 |
-
2014
- 2014-01-30 KR KR1020177024676A patent/KR101923846B1/ko active Active
- 2014-01-30 WO PCT/JP2014/052146 patent/WO2014119676A1/ja not_active Ceased
- 2014-01-30 SG SG11201505836WA patent/SG11201505836WA/en unknown
- 2014-01-30 WO PCT/JP2014/052145 patent/WO2014119675A1/ja not_active Ceased
- 2014-01-30 SG SG11201505833XA patent/SG11201505833XA/en unknown
- 2014-01-30 JP JP2014559747A patent/JP5744353B2/ja active Active
- 2014-01-30 KR KR1020167032138A patent/KR101764560B1/ko active Active
- 2014-01-30 KR KR1020157018901A patent/KR101777031B1/ko active Active
- 2014-01-30 KR KR1020177015376A patent/KR20170069292A/ko not_active Ceased
- 2014-01-30 US US14/764,327 patent/US9618563B2/en active Active
- 2014-01-30 JP JP2014559748A patent/JP5745707B2/ja active Active
- 2014-01-30 SG SG10201604835TA patent/SG10201604835TA/en unknown
- 2014-01-30 US US14/764,246 patent/US9562944B2/en active Active
- 2014-01-30 KR KR1020157019600A patent/KR101679527B1/ko active Active
-
2015
- 2015-05-01 JP JP2015094299A patent/JP6389797B2/ja active Active
-
2016
- 2016-07-26 US US15/219,946 patent/US10191104B2/en active Active
-
2017
- 2017-03-02 US US15/447,525 patent/US10101383B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2015145883A (ja) | 2015-08-13 |
| US9562944B2 (en) | 2017-02-07 |
| JP5744353B2 (ja) | 2015-07-08 |
| US9618563B2 (en) | 2017-04-11 |
| WO2014119675A1 (ja) | 2014-08-07 |
| JPWO2014119675A1 (ja) | 2017-01-26 |
| KR101777031B1 (ko) | 2017-09-08 |
| JP6389797B2 (ja) | 2018-09-12 |
| SG10201604835TA (en) | 2016-07-28 |
| US10101383B2 (en) | 2018-10-16 |
| US20150369755A1 (en) | 2015-12-24 |
| JP5745707B2 (ja) | 2015-07-08 |
| KR101764560B1 (ko) | 2017-08-02 |
| KR20170069292A (ko) | 2017-06-20 |
| US20170176521A1 (en) | 2017-06-22 |
| KR20170104637A (ko) | 2017-09-15 |
| KR101923846B1 (ko) | 2018-11-29 |
| KR101679527B1 (ko) | 2016-11-24 |
| KR20150103686A (ko) | 2015-09-11 |
| JPWO2014119676A1 (ja) | 2017-01-26 |
| KR20150112954A (ko) | 2015-10-07 |
| SG11201505833XA (en) | 2015-08-28 |
| US20150377959A1 (en) | 2015-12-31 |
| WO2014119676A1 (ja) | 2014-08-07 |
| US20160334459A1 (en) | 2016-11-17 |
| US10191104B2 (en) | 2019-01-29 |
| KR20160135845A (ko) | 2016-11-28 |
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