KR101923846B1 - 반도체 디바이스 검사 장치 및 반도체 디바이스 검사 방법 - Google Patents

반도체 디바이스 검사 장치 및 반도체 디바이스 검사 방법 Download PDF

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KR101923846B1
KR101923846B1 KR1020177024676A KR20177024676A KR101923846B1 KR 101923846 B1 KR101923846 B1 KR 101923846B1 KR 1020177024676 A KR1020177024676 A KR 1020177024676A KR 20177024676 A KR20177024676 A KR 20177024676A KR 101923846 B1 KR101923846 B1 KR 101923846B1
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signal
semiconductor device
electric meter
frequency
detection signal
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KR20170104637A (ko
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도모노리 나카무라
미츠노리 니시자와
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하마마츠 포토닉스 가부시키가이샤
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/265—Contactless testing
    • G01R31/2656—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R23/00—Arrangements for measuring frequencies; Arrangements for analysing frequency spectra
    • G01R23/16—Spectrum analysis; Fourier analysis
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2601—Apparatus or methods therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/265—Contactless testing
    • G01R31/2653—Contactless testing using electron beams
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/305—Contactless testing using electron beams
    • G01R31/307—Contactless testing using electron beams of integrated circuits
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G01R31/311—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation of integrated circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/12—Circuits of general importance; Signal processing

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • General Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Pathology (AREA)
  • Immunology (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Analytical Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Measuring Leads Or Probes (AREA)
KR1020177024676A 2013-02-01 2014-01-30 반도체 디바이스 검사 장치 및 반도체 디바이스 검사 방법 Active KR101923846B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013018683 2013-02-01
JPJP-P-2013-018683 2013-02-01
PCT/JP2014/052145 WO2014119675A1 (ja) 2013-02-01 2014-01-30 半導体デバイス検査装置及び半導体デバイス検査方法

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KR1020157018901A Division KR101777031B1 (ko) 2013-02-01 2014-01-30 반도체 디바이스 검사 장치 및 반도체 디바이스 검사 방법

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KR20170104637A KR20170104637A (ko) 2017-09-15
KR101923846B1 true KR101923846B1 (ko) 2018-11-29

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KR1020167032138A Active KR101764560B1 (ko) 2013-02-01 2014-01-30 반도체 디바이스 검사 장치 및 반도체 디바이스 검사 방법
KR1020157018901A Active KR101777031B1 (ko) 2013-02-01 2014-01-30 반도체 디바이스 검사 장치 및 반도체 디바이스 검사 방법
KR1020177015376A Ceased KR20170069292A (ko) 2013-02-01 2014-01-30 반도체 디바이스 검사 장치 및 반도체 디바이스 검사 방법
KR1020157019600A Active KR101679527B1 (ko) 2013-02-01 2014-01-30 반도체 디바이스 검사 장치 및 반도체 디바이스 검사 방법

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KR1020157018901A Active KR101777031B1 (ko) 2013-02-01 2014-01-30 반도체 디바이스 검사 장치 및 반도체 디바이스 검사 방법
KR1020177015376A Ceased KR20170069292A (ko) 2013-02-01 2014-01-30 반도체 디바이스 검사 장치 및 반도체 디바이스 검사 방법
KR1020157019600A Active KR101679527B1 (ko) 2013-02-01 2014-01-30 반도체 디바이스 검사 장치 및 반도체 디바이스 검사 방법

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US (4) US9618563B2 (https=)
JP (3) JP5744353B2 (https=)
KR (5) KR101923846B1 (https=)
SG (3) SG11201505836WA (https=)
WO (2) WO2014119676A1 (https=)

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KR101923846B1 (ko) * 2013-02-01 2018-11-29 하마마츠 포토닉스 가부시키가이샤 반도체 디바이스 검사 장치 및 반도체 디바이스 검사 방법
JP2016109673A (ja) * 2014-10-16 2016-06-20 ディーシージー システムズ、 インコーポレイテッドＤｃｇ Ｓｙｓｔｅｍｓ Ｉｎｃ． レーザボルテージイメージングのシステム及び方法
JP6714485B2 (ja) 2016-09-28 2020-06-24 浜松ホトニクス株式会社 半導体デバイス検査方法及び半導体デバイス検査装置
JP2018072290A (ja) * 2016-11-04 2018-05-10 ルネサスエレクトロニクス株式会社 故障箇所特定装置および故障箇所特定方法
KR102440165B1 (ko) * 2018-06-28 2022-09-06 주식회사 히타치하이테크 반도체 검사 장치
US11011435B2 (en) * 2018-11-20 2021-05-18 Asm Technology Singapore Pte Ltd Apparatus and method inspecting bonded semiconductor dice
JP7398449B2 (ja) * 2019-05-31 2023-12-14 浜松ホトニクス株式会社 半導体デバイス検査方法及び半導体デバイス検査装置
JP7164488B2 (ja) * 2019-05-31 2022-11-01 浜松ホトニクス株式会社 半導体デバイス検査方法及び半導体デバイス検査装置
JP6824351B1 (ja) * 2019-09-13 2021-02-03 浜松ホトニクス株式会社 半導体試料の検査装置及び検査方法
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KR102425048B1 (ko) * 2020-12-24 2022-07-27 큐알티 주식회사 반도체 소자 테스트용 빔 검사 장치, 및 빔 검사 방법
US12546805B2 (en) * 2021-05-21 2026-02-10 Hitachi High-Tech Corporation Sample inspection apparatus
KR102586199B1 (ko) * 2021-10-21 2023-10-06 큐알티 주식회사 전력 반도체 소자의 검사 방법, 및 이를 위한 검사 시스템
KR102418633B1 (ko) * 2021-12-22 2022-07-07 큐알티 주식회사 반도체 소자의 방사선 평가 방법, 및 반도체 소자의 방사선 평가 시스템
KR102518783B1 (ko) * 2022-06-23 2023-04-06 큐알티 주식회사 적응적 변형이 가능한 빔 제어기, 이를 이용한 반도체 소자의 테스트 장치, 및 이를 이용한 반도체 소자의 테스트 방법

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JP2015145883A (ja) 2015-08-13
US9562944B2 (en) 2017-02-07
JP5744353B2 (ja) 2015-07-08
US9618563B2 (en) 2017-04-11
WO2014119675A1 (ja) 2014-08-07
JPWO2014119675A1 (ja) 2017-01-26
KR101777031B1 (ko) 2017-09-08
JP6389797B2 (ja) 2018-09-12
SG10201604835TA (en) 2016-07-28
US10101383B2 (en) 2018-10-16
US20150369755A1 (en) 2015-12-24
JP5745707B2 (ja) 2015-07-08
KR101764560B1 (ko) 2017-08-02
KR20170069292A (ko) 2017-06-20
US20170176521A1 (en) 2017-06-22
KR20170104637A (ko) 2017-09-15
KR101679527B1 (ko) 2016-11-24
KR20150103686A (ko) 2015-09-11
JPWO2014119676A1 (ja) 2017-01-26
KR20150112954A (ko) 2015-10-07
SG11201505833XA (en) 2015-08-28
SG11201505836WA (en) 2015-09-29
US20150377959A1 (en) 2015-12-31
WO2014119676A1 (ja) 2014-08-07
US20160334459A1 (en) 2016-11-17
US10191104B2 (en) 2019-01-29
KR20160135845A (ko) 2016-11-28

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