SG11201500717TA - SiC MOLDED BODY AND METHOD FOR PRODUCING SiC MOLDED BODY - Google Patents

SiC MOLDED BODY AND METHOD FOR PRODUCING SiC MOLDED BODY

Info

Publication number
SG11201500717TA
SG11201500717TA SG11201500717TA SG11201500717TA SG11201500717TA SG 11201500717T A SG11201500717T A SG 11201500717TA SG 11201500717T A SG11201500717T A SG 11201500717TA SG 11201500717T A SG11201500717T A SG 11201500717TA SG 11201500717T A SG11201500717T A SG 11201500717TA
Authority
SG
Singapore
Prior art keywords
molded body
sic molded
producing
sic
producing sic
Prior art date
Application number
SG11201500717TA
Other languages
English (en)
Inventor
Takaomi Sugihara
Masaaki Asakura
Takeshi Tokunaga
Tetsuya SADAKI
Original Assignee
Tokai Carbon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokai Carbon Kk filed Critical Tokai Carbon Kk
Publication of SG11201500717TA publication Critical patent/SG11201500717TA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
    • C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide
    • C01B32/963—Preparation from compounds containing silicon
    • C01B32/977—Preparation from organic compounds containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/42—Silicides
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/42—Non metallic elements added as constituents or additives, e.g. sulfur, phosphor, selenium or tellurium
    • C04B2235/421—Boron
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/44—Metal salt constituents or additives chosen for the nature of the anions, e.g. hydrides or acetylacetonate
    • C04B2235/441—Alkoxides, e.g. methoxide, tert-butoxide
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/44—Metal salt constituents or additives chosen for the nature of the anions, e.g. hydrides or acetylacetonate
    • C04B2235/444—Halide containing anions, e.g. bromide, iodate, chlorite
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/46—Gases other than oxygen used as reactant, e.g. nitrogen used to make a nitride phase
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/48—Organic compounds becoming part of a ceramic after heat treatment, e.g. carbonising phenol resins
    • C04B2235/483—Si-containing organic compounds, e.g. silicone resins, (poly)silanes, (poly)siloxanes or (poly)silazanes
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/72—Products characterised by the absence or the low content of specific components, e.g. alkali metal free alumina ceramics
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/72—Products characterised by the absence or the low content of specific components, e.g. alkali metal free alumina ceramics
    • C04B2235/722—Nitrogen content

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Ceramic Products (AREA)
  • Drying Of Semiconductors (AREA)
SG11201500717TA 2012-08-01 2012-09-13 SiC MOLDED BODY AND METHOD FOR PRODUCING SiC MOLDED BODY SG11201500717TA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012171002A JP5896297B2 (ja) 2012-08-01 2012-08-01 ＣＶＤ−ＳｉＣ成形体およびＣＶＤ−ＳｉＣ成形体の製造方法
PCT/JP2012/073413 WO2014020776A1 (ja) 2012-08-01 2012-09-13 ＳｉＣ成形体およびＳｉＣ成形体の製造方法

Publications (1)

Publication Number Publication Date
SG11201500717TA true SG11201500717TA (en) 2015-03-30

Family

ID=50027498

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201500717TA SG11201500717TA (en) 2012-08-01 2012-09-13 SiC MOLDED BODY AND METHOD FOR PRODUCING SiC MOLDED BODY

Country Status (8)

Country Link
US (1) US9975779B2 (zh)
EP (1) EP2881494B1 (zh)
JP (1) JP5896297B2 (zh)
KR (1) KR101818805B1 (zh)
CN (1) CN104508178B (zh)
SG (1) SG11201500717TA (zh)
TW (1) TWI541375B (zh)
WO (1) WO2014020776A1 (zh)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9546420B1 (en) * 2012-10-08 2017-01-17 Sandia Corporation Methods of depositing an alpha-silicon-carbide-containing film at low temperature
CN104557047B (zh) * 2014-12-31 2017-04-12 台州东新密封有限公司 挤压成型无压烧结碳化硅管材的制备法
KR101866869B1 (ko) * 2016-08-18 2018-06-14 주식회사 티씨케이 SiC 소재 및 SiC 복합 소재
JP2018035009A (ja) * 2016-08-29 2018-03-08 京セラ株式会社 ＳｉＣ材料およびそれを用いた半導体製造装置用部材
JP2019112288A (ja) * 2017-12-26 2019-07-11 京セラ株式会社 炭化ケイ素部材および半導体製造装置用部材
JP7163756B2 (ja) * 2018-12-21 2022-11-01 住友金属鉱山株式会社 積層体、積層体の製造方法および炭化珪素多結晶基板の製造方法
CN109797460B (zh) * 2019-01-28 2021-07-30 江西嘉捷信达新材料科技有限公司 含铝硼SiC纤维及其超临界流体下的制备方法
JP7155089B2 (ja) * 2019-09-27 2022-10-18 東海カーボン株式会社 多結晶ＳｉＣ成形体
JP7367497B2 (ja) * 2019-11-29 2023-10-24 住友金属鉱山株式会社 炭化ケイ素多結晶膜の成膜方法、および、炭化ケイ素多結晶基板の製造方法
CN111139454B (zh) * 2019-12-30 2022-05-10 东莞市志橙半导体材料有限公司 一种SiC涂层及其制备方法
CN112522788A (zh) * 2020-10-30 2021-03-19 山东天岳先进科技股份有限公司 一种富氮碳化硅粉料及其制备方法与应用
JP7183358B1 (ja) * 2021-08-04 2022-12-05 昭和電工株式会社 ＳｉＣエピタキシャルウェハ及びＳｉＣエピタキシャルウェハの製造方法
CN117769609A (zh) 2022-07-26 2024-03-26 东海炭素株式会社 多晶SiC成型体及其制造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11121311A (ja) * 1997-10-13 1999-04-30 Mitsui Eng & Shipbuild Co Ltd 炭化ケイ素材およびその製造方法並びに炭化ケイ素ウエハ
JP4595153B2 (ja) * 2000-02-14 2010-12-08 旭硝子株式会社 炭化ケイ素体およびその製造方法
JP2002003275A (ja) * 2000-06-20 2002-01-09 Tokai Carbon Co Ltd 光不透過性ＳｉＣ成形体及びその製造方法
JP2002047066A (ja) 2000-08-02 2002-02-12 Tokai Carbon Co Ltd ＳｉＣ成形体およびその製造方法
JP2002128566A (ja) * 2000-10-16 2002-05-09 Bridgestone Corp 炭化ケイ素焼結体及び電極
JP4419409B2 (ja) * 2002-12-25 2010-02-24 住友電気工業株式会社 Ｃｖｄエピタキシャル成長方法
JP2005119925A (ja) * 2003-10-20 2005-05-12 Toshiba Ceramics Co Ltd 高比抵抗炭化ケイ素焼結体
US8114505B2 (en) * 2003-12-05 2012-02-14 Morgan Advanced Ceramics, Inc. Free-standing silicon carbide articles formed by chemical vapor deposition and methods for their manufacture
US20050123713A1 (en) 2003-12-05 2005-06-09 Forrest David T. Articles formed by chemical vapor deposition and methods for their manufacture
JP4404703B2 (ja) 2004-07-01 2010-01-27 東海カーボン株式会社 光不透過性ＳｉＣ成形体及びその製造方法
WO2008054415A2 (en) * 2005-12-07 2008-05-08 Ii-Vi Incorporated Method for synthesizing ultrahigh-purity silicon carbide
JP4469396B2 (ja) 2008-01-15 2010-05-26 新日本製鐵株式会社 炭化珪素単結晶インゴット、これから得られる基板及びエピタキシャルウェハ
KR101266205B1 (ko) * 2008-07-08 2013-05-21 우시오덴키 가부시키가이샤 발광 장치 및 발광 장치의 제조 방법

Also Published As

Publication number Publication date
EP2881494A1 (en) 2015-06-10
CN104508178B (zh) 2016-08-24
US9975779B2 (en) 2018-05-22
WO2014020776A1 (ja) 2014-02-06
KR20150037761A (ko) 2015-04-08
KR101818805B1 (ko) 2018-01-15
JP5896297B2 (ja) 2016-03-30
JP2014031527A (ja) 2014-02-20
TW201406985A (zh) 2014-02-16
EP2881494B1 (en) 2018-10-31
EP2881494A4 (en) 2016-03-02
CN104508178A (zh) 2015-04-08
US20150151975A1 (en) 2015-06-04
TWI541375B (zh) 2016-07-11

Similar Documents

Publication Publication Date Title
EP2884149A4 (en) AEROGEL MOLDED BODY, PARTICLES CONTAINING AEROGEL, AND METHOD FOR PRODUCING A MOLDED AEROGEL BODY
SG11201500717TA (en) SiC MOLDED BODY AND METHOD FOR PRODUCING SiC MOLDED BODY
EP2979836A4 (en) METHOD OF MANUFACTURING A COMPOSITE FORM BODY
EP2826880A4 (en) HOT PRESSED MOLDED ARTICLE AND METHOD FOR MANUFACTURING THE SAME
EP2826879A4 (en) HOT PRESSED MOLDED ARTICLE AND METHOD FOR MANUFACTURING THE SAME
EP2752442A4 (en) MOLDED BODY HAVING SURFACE SURFACE AND METHOD FOR PRODUCING THE SAME
EP2695722A4 (en) COMPOSITE MOLDED BODY AND PROCESS FOR PRODUCING THE BODY
EP2754647A4 (en) SHAPED INORGANIC FIBER OBJECT AND METHOD FOR THE PRODUCTION THEREOF
SG11201603098WA (en) Catalyst for producing higher silane and method for producing higher silane
EP2941978A4 (en) MOLDED FLAT FIXING ELEMENT AND PRODUCTION METHOD FOR A CUSHION BODY
EP2957411A4 (en) PROCESS FOR PRODUCING MOLDED MOLDED BODIES
EP2666828A4 (en) MOLDED BODY
EP2837478A4 (en) VULCANIZATION PRODUCT AND METHOD FOR PRODUCING SAME
EP2874288A4 (en) DEVICE FOR PRODUCING AN INDUCTIVE POLE MAGNETIC BODY
EP2873709A4 (en) METHOD FOR PRODUCING A HEAT RADIATION DISPERSION, HEAT RADIATION DISPERSING AND HEAT RADIATION SCREENS OF THE BODY
EP2821433A4 (en) RUBBER COMPOSITION AND PROCESS FOR PRODUCING RUBBER COMPOSITION
EP2907647A4 (en) FOAM MOLDING AND MOLDING METHOD THEREFOR
EP2796276A4 (en) METHOD FOR PRODUCING MOLDED ARTICLE AND MOLDED ARTICLE
PL2505332T3 (pl) Korpus z tworzywa sztucznego i system do wytwarzania korpusu z tworzywa sztucznego
EP2853370A4 (en) COMPOSITE BODY AND METHOD FOR PRODUCING THE COMPOSITE BODY
GB201217979D0 (en) Article and method for producing an article
EP2804193A4 (en) LIMIT SWITCH AND MANUFACTURING METHOD THEREFOR
EP2803470A4 (en) MOLDING METHOD AND MOLDING DEVICE
EP2871482A4 (en) MICROCHIP AND METHOD FOR PRODUCING THE SAME
EP2614950A4 (en) MOLDING AND FORMING METHOD