SG11201500717TA - SiC MOLDED BODY AND METHOD FOR PRODUCING SiC MOLDED BODY - Google Patents

SiC MOLDED BODY AND METHOD FOR PRODUCING SiC MOLDED BODY

Info

Publication number
SG11201500717TA
SG11201500717TA SG11201500717TA SG11201500717TA SG11201500717TA SG 11201500717T A SG11201500717T A SG 11201500717TA SG 11201500717T A SG11201500717T A SG 11201500717TA SG 11201500717T A SG11201500717T A SG 11201500717TA SG 11201500717T A SG11201500717T A SG 11201500717TA
Authority
SG
Singapore
Prior art keywords
molded body
sic molded
producing
sic
producing sic
Prior art date
Application number
SG11201500717TA
Inventor
Takaomi Sugihara
Masaaki Asakura
Takeshi Tokunaga
Tetsuya SADAKI
Original Assignee
Tokai Carbon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokai Carbon Kk filed Critical Tokai Carbon Kk
Publication of SG11201500717TA publication Critical patent/SG11201500717TA/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
    • C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide
    • C01B32/963—Preparation from compounds containing silicon
    • C01B32/977—Preparation from organic compounds containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/42—Silicides
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/42—Non metallic elements added as constituents or additives, e.g. sulfur, phosphor, selenium or tellurium
    • C04B2235/421—Boron
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/44—Metal salt constituents or additives chosen for the nature of the anions, e.g. hydrides or acetylacetonate
    • C04B2235/441—Alkoxides, e.g. methoxide, tert-butoxide
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/44—Metal salt constituents or additives chosen for the nature of the anions, e.g. hydrides or acetylacetonate
    • C04B2235/444—Halide containing anions, e.g. bromide, iodate, chlorite
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/46—Gases other than oxygen used as reactant, e.g. nitrogen used to make a nitride phase
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/48—Organic compounds becoming part of a ceramic after heat treatment, e.g. carbonising phenol resins
    • C04B2235/483—Si-containing organic compounds, e.g. silicone resins, (poly)silanes, (poly)siloxanes or (poly)silazanes
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/72—Products characterised by the absence or the low content of specific components, e.g. alkali metal free alumina ceramics
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/72—Products characterised by the absence or the low content of specific components, e.g. alkali metal free alumina ceramics
    • C04B2235/722—Nitrogen content
SG11201500717TA 2012-08-01 2012-09-13 SiC MOLDED BODY AND METHOD FOR PRODUCING SiC MOLDED BODY SG11201500717TA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012171002A JP5896297B2 (en) 2012-08-01 2012-08-01 CVD-SiC molded body and method for producing CVD-SiC molded body
PCT/JP2012/073413 WO2014020776A1 (en) 2012-08-01 2012-09-13 SiC MOLDED BODY AND METHOD FOR PRODUCING SiC MOLDED BODY

Publications (1)

Publication Number Publication Date
SG11201500717TA true SG11201500717TA (en) 2015-03-30

Family

ID=50027498

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201500717TA SG11201500717TA (en) 2012-08-01 2012-09-13 SiC MOLDED BODY AND METHOD FOR PRODUCING SiC MOLDED BODY

Country Status (8)

Country Link
US (1) US9975779B2 (en)
EP (1) EP2881494B1 (en)
JP (1) JP5896297B2 (en)
KR (1) KR101818805B1 (en)
CN (1) CN104508178B (en)
SG (1) SG11201500717TA (en)
TW (1) TWI541375B (en)
WO (1) WO2014020776A1 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9546420B1 (en) * 2012-10-08 2017-01-17 Sandia Corporation Methods of depositing an alpha-silicon-carbide-containing film at low temperature
CN104557047B (en) * 2014-12-31 2017-04-12 台州东新密封有限公司 Preparation method for extruded pressureless sintered silicon carbide pipe
KR101866869B1 (en) * 2016-08-18 2018-06-14 주식회사 티씨케이 Silicon carbide material and silicon carbide composite
JP2018035009A (en) * 2016-08-29 2018-03-08 京セラ株式会社 SiC MATERIAL AND MEMBER FOR SEMICONDUCTOR MANUFACTURING DEVICE USING THE SAME
JP2019112288A (en) * 2017-12-26 2019-07-11 京セラ株式会社 Silicon carbide member and member for semiconductor manufacturing device
JP7163756B2 (en) * 2018-12-21 2022-11-01 住友金属鉱山株式会社 LAMINATED PRODUCT, METHOD FOR MANUFACTURING LAMINATED BODY, AND METHOD FOR MANUFACTURING SILICON CARBIDE POLYCRYSTALLINE SUBSTRATE
CN109797460B (en) * 2019-01-28 2021-07-30 江西嘉捷信达新材料科技有限公司 Aluminum-boron-containing SiC fiber and preparation method thereof under supercritical fluid
JP7155089B2 (en) * 2019-09-27 2022-10-18 東海カーボン株式会社 Polycrystalline SiC compact
JP7367497B2 (en) * 2019-11-29 2023-10-24 住友金属鉱山株式会社 Method for forming a silicon carbide polycrystalline film and manufacturing method for a silicon carbide polycrystalline substrate
CN111139454B (en) * 2019-12-30 2022-05-10 东莞市志橙半导体材料有限公司 SiC coating and preparation method thereof
CN112522788A (en) * 2020-10-30 2021-03-19 山东天岳先进科技股份有限公司 Nitrogen-rich silicon carbide powder and preparation method and application thereof
JP7183358B1 (en) * 2021-08-04 2022-12-05 昭和電工株式会社 SiC epitaxial wafer and method for producing SiC epitaxial wafer
WO2024024218A1 (en) 2022-07-26 2024-02-01 東海カーボン株式会社 Polycrystalline sic molded article and method for producing same

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11121311A (en) * 1997-10-13 1999-04-30 Mitsui Eng & Shipbuild Co Ltd Silicon carbide material, its manufacture and silicon carbide wafer
JP4595153B2 (en) * 2000-02-14 2010-12-08 旭硝子株式会社 Silicon carbide body and method for producing the same
JP2002003275A (en) * 2000-06-20 2002-01-09 Tokai Carbon Co Ltd SiC FORMED BODY WITH HINDERING LIGHT TRANSMISSION AND ITS MANUFACTURING METHOD
JP2002047066A (en) * 2000-08-02 2002-02-12 Tokai Carbon Co Ltd FORMED SiC AND ITS MANUFACTURING METHOD
JP2002128566A (en) * 2000-10-16 2002-05-09 Bridgestone Corp Silicon carbide sintered compact and electrode
JP4419409B2 (en) * 2002-12-25 2010-02-24 住友電気工業株式会社 CVD epitaxial growth method
JP2005119925A (en) * 2003-10-20 2005-05-12 Toshiba Ceramics Co Ltd High-resistivity silicon carbide sintered compact
US20050123713A1 (en) 2003-12-05 2005-06-09 Forrest David T. Articles formed by chemical vapor deposition and methods for their manufacture
US8114505B2 (en) * 2003-12-05 2012-02-14 Morgan Advanced Ceramics, Inc. Free-standing silicon carbide articles formed by chemical vapor deposition and methods for their manufacture
JP4404703B2 (en) 2004-07-01 2010-01-27 東海カーボン株式会社 Light-impermeable SiC molded body and method for producing the same
WO2008054415A2 (en) * 2005-12-07 2008-05-08 Ii-Vi Incorporated Method for synthesizing ultrahigh-purity silicon carbide
JP4469396B2 (en) * 2008-01-15 2010-05-26 新日本製鐵株式会社 Silicon carbide single crystal ingot, substrate obtained therefrom and epitaxial wafer
KR101266205B1 (en) 2008-07-08 2013-05-21 우시오덴키 가부시키가이샤 Light emitting device and method for manufacturing the same

Also Published As

Publication number Publication date
US9975779B2 (en) 2018-05-22
US20150151975A1 (en) 2015-06-04
EP2881494A4 (en) 2016-03-02
WO2014020776A1 (en) 2014-02-06
TWI541375B (en) 2016-07-11
EP2881494A1 (en) 2015-06-10
KR20150037761A (en) 2015-04-08
CN104508178A (en) 2015-04-08
TW201406985A (en) 2014-02-16
JP5896297B2 (en) 2016-03-30
EP2881494B1 (en) 2018-10-31
CN104508178B (en) 2016-08-24
KR101818805B1 (en) 2018-01-15
JP2014031527A (en) 2014-02-20

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