SG11201405381WA - Abrasive composition and method for producing semiconductor substrate - Google Patents

Abrasive composition and method for producing semiconductor substrate

Info

Publication number
SG11201405381WA
SG11201405381WA SG11201405381WA SG11201405381WA SG11201405381WA SG 11201405381W A SG11201405381W A SG 11201405381WA SG 11201405381W A SG11201405381W A SG 11201405381WA SG 11201405381W A SG11201405381W A SG 11201405381WA SG 11201405381W A SG11201405381W A SG 11201405381WA
Authority
SG
Singapore
Prior art keywords
semiconductor substrate
abrasive composition
producing semiconductor
producing
abrasive
Prior art date
Application number
SG11201405381WA
Other languages
English (en)
Inventor
Yoshio Mori
Kohsuke Tsuchiya
Maki Asada
Shuhei Takahashi
Original Assignee
Fujimi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujimi Inc filed Critical Fujimi Inc
Publication of SG11201405381WA publication Critical patent/SG11201405381WA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/06—Other polishing compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Composite Materials (AREA)
  • Dispersion Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG11201405381WA 2012-03-14 2013-03-12 Abrasive composition and method for producing semiconductor substrate SG11201405381WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012057641 2012-03-14
PCT/JP2013/056702 WO2013137212A1 (ja) 2012-03-14 2013-03-12 研磨用組成物及び半導体基板の製造方法

Publications (1)

Publication Number Publication Date
SG11201405381WA true SG11201405381WA (en) 2014-10-30

Family

ID=49161118

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201405381WA SG11201405381WA (en) 2012-03-14 2013-03-12 Abrasive composition and method for producing semiconductor substrate

Country Status (7)

Country Link
US (1) US9685341B2 (ko)
JP (1) JP6133271B2 (ko)
KR (1) KR101970858B1 (ko)
DE (1) DE112013001454T5 (ko)
SG (1) SG11201405381WA (ko)
TW (1) TWI558800B (ko)
WO (1) WO2013137212A1 (ko)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5893706B2 (ja) * 2013-10-25 2016-03-23 花王株式会社 シリコンウェーハ用研磨液組成物
KR102209686B1 (ko) * 2014-06-27 2021-01-29 동우 화인켐 주식회사 금속막의 식각액 조성물 및 이를 이용한 액정표시장치용 어레이 기판의 제조방법
KR102204210B1 (ko) * 2014-06-27 2021-01-18 동우 화인켐 주식회사 금속막의 식각액 조성물 및 이를 이용한 액정표시장치용 어레이 기판의 제조방법
JP6559936B2 (ja) * 2014-09-05 2019-08-14 日本キャボット・マイクロエレクトロニクス株式会社 スラリー組成物、リンス組成物、基板研磨方法およびリンス方法
WO2017150158A1 (ja) * 2016-03-01 2017-09-08 株式会社フジミインコーポレーテッド シリコン基板の研磨方法および研磨用組成物セット
WO2018043504A1 (ja) * 2016-08-31 2018-03-08 株式会社フジミインコーポレーテッド 研磨用組成物および研磨用組成物セット
WO2018150856A1 (ja) * 2017-02-17 2018-08-23 株式会社フジミインコーポレーテッド 研磨用組成物、その製造方法および研磨用組成物を用いた研磨方法
JP6879798B2 (ja) * 2017-03-30 2021-06-02 株式会社フジミインコーポレーテッド 研磨用組成物および研磨方法
US10479911B1 (en) 2018-06-05 2019-11-19 Cabot Microelectronics Corporation Composition and method for polishing memory hard disks exhibiting reduced edge roll off
KR20210114509A (ko) * 2019-01-23 2021-09-23 샌트랄 글래스 컴퍼니 리미티드 드라이 에칭 방법, 드라이 에칭제, 및 그 보존 용기
JP2021105145A (ja) 2019-12-27 2021-07-26 ニッタ・デュポン株式会社 研磨用組成物及びシリコンウェーハの研磨方法
JP2022099606A (ja) 2020-12-23 2022-07-05 ニッタ・デュポン株式会社 研磨用組成物及びシリコンウェーハの研磨方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000256656A (ja) * 1999-03-04 2000-09-19 Hitachi Chem Co Ltd Ｃｍｐ研磨剤及び基板の研磨方法
JPWO2002067309A1 (ja) * 2001-02-20 2004-06-24 日立化成工業株式会社 研磨剤及び基板の研磨方法
JP4668528B2 (ja) * 2003-09-05 2011-04-13 株式会社フジミインコーポレーテッド 研磨用組成物
US20060135045A1 (en) * 2004-12-17 2006-06-22 Jinru Bian Polishing compositions for reducing erosion in semiconductor wafers
JP2007214205A (ja) * 2006-02-07 2007-08-23 Fujimi Inc 研磨用組成物
JP2009147267A (ja) 2007-12-18 2009-07-02 Dai Ichi Kogyo Seiyaku Co Ltd 化学機械研磨用研磨剤
WO2009098924A1 (ja) * 2008-02-06 2009-08-13 Jsr Corporation 化学機械研磨用水系分散体および化学機械研磨方法
JP5781287B2 (ja) * 2009-10-01 2015-09-16 ニッタ・ハース株式会社 研磨組成物
KR20130041084A (ko) * 2010-06-18 2013-04-24 히타치가세이가부시끼가이샤 반도체 기판용 연마액 및 반도체 웨이퍼의 제조 방법

Also Published As

Publication number Publication date
KR20140139541A (ko) 2014-12-05
TWI558800B (zh) 2016-11-21
JP6133271B2 (ja) 2017-05-24
TW201350563A (zh) 2013-12-16
US20150079789A1 (en) 2015-03-19
WO2013137212A1 (ja) 2013-09-19
JPWO2013137212A1 (ja) 2015-08-03
DE112013001454T5 (de) 2015-01-15
KR101970858B1 (ko) 2019-04-19
US9685341B2 (en) 2017-06-20

Similar Documents

Publication Publication Date Title
SG11201500924PA (en) Polishing composition and method for producing substrate
EP2851937A4 (en) POLISHING COMPOSITION, POLISHING METHOD THEREFOR AND METHOD FOR PRODUCING A SUBSTRATE
SG11201404587TA (en) Polishing composition and method for producing semiconductor substrate
SG11201405381WA (en) Abrasive composition and method for producing semiconductor substrate
SG11201401309PA (en) Composition for polishing purposes, polishing method using same, and method for producing substrate
EP2672517A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME
GB201506267D0 (en) Advanced handler wafer debonding method
SG11201405091TA (en) Polishing agent, polishing agent set, and substrate polishing method
EP2701201A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME
EP2662882A4 (en) SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR
EP2863440A4 (en) SEMICONDUCTOR DEVICE WITH SILICON CARBIDE AND METHOD FOR MANUFACTURING THE SAME
EP2863417A4 (en) SILICON CARBIDE SEMICONDUCTOR ELEMENT AND METHOD FOR THE PRODUCTION THEREOF
EP2859059A4 (en) COMPOSITION AND METHOD FOR POLISHING MOLYBDEN
EP2800143A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SEMICONDUCTOR DEVICE
EP2677539A4 (en) SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
EP2806461A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME
EP2725622A4 (en) SILICON CARBIDE ISOLATED GATE SEMICONDUCTOR ELEMENT AND METHOD OF MANUFACTURING THEREOF
SG11201400775PA (en) Composition and method for polishing aluminum semiconductor substrates
EP2840072A4 (en) PROCESS FOR PRODUCING SEMICONDUCTOR CERAMIC COMPOSITION
EP2725610A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
EP2662887A4 (en) SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING THE SAME
EP2884525A4 (en) DIAMOND SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING THEREOF
EP2720254A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
EP2851938A4 (en) SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR
SG10201604299YA (en) Resin Composition, Semiconductor Device Using Same, and Method of Manufacturing Semiconductor Device