SG11201403972VA - A nanowire device having graphene top and bottom electrodes and method of making such a device - Google Patents
A nanowire device having graphene top and bottom electrodes and method of making such a deviceInfo
- Publication number
- SG11201403972VA SG11201403972VA SG11201403972VA SG11201403972VA SG11201403972VA SG 11201403972V A SG11201403972V A SG 11201403972VA SG 11201403972V A SG11201403972V A SG 11201403972VA SG 11201403972V A SG11201403972V A SG 11201403972VA SG 11201403972V A SG11201403972V A SG 11201403972VA
- Authority
- SG
- Singapore
- Prior art keywords
- making
- bottom electrodes
- nanowire
- graphene top
- graphene
- Prior art date
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title 1
- 229910021389 graphene Inorganic materials 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000002070 nanowire Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/20—Graphite
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/005—Growth of whiskers or needles
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/42—Gallium arsenide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02376—Carbon, e.g. diamond-like carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/02444—Carbon, e.g. diamond-like carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02603—Nanowires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02609—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
- H01L21/02645—Seed materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02653—Vapour-liquid-solid growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
- H01L29/0669—Nanowires or nanotubes
- H01L29/0676—Nanowires or nanotubes oriented perpendicular or at an angle to a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1606—Graphene
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/413—Nanosized electrodes, e.g. nanowire electrodes comprising one or a plurality of nanowires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66469—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with one- or zero-dimensional channel, e.g. quantum wire field-effect transistors, in-plane gate transistors [IPG], single electron transistors [SET], Coulomb blockade transistors, striped channel transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
- H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Electromagnetism (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Geology (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Catalysts (AREA)
- Electrodes Of Semiconductors (AREA)
- Photovoltaic Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB1200355.4A GB201200355D0 (en) | 2012-01-10 | 2012-01-10 | Nanowires |
PCT/EP2013/050419 WO2013104723A1 (en) | 2012-01-10 | 2013-01-10 | A nanowire device having graphene top and bottom electrodes and method of making such a device |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201403972VA true SG11201403972VA (en) | 2014-08-28 |
Family
ID=45788715
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201403972VA SG11201403972VA (en) | 2012-01-10 | 2013-01-10 | A nanowire device having graphene top and bottom electrodes and method of making such a device |
Country Status (14)
Country | Link |
---|---|
US (1) | US10243104B2 (ko) |
EP (1) | EP2803091B1 (ko) |
JP (1) | JP6147277B2 (ko) |
KR (1) | KR102025548B1 (ko) |
CN (1) | CN104145340B (ko) |
AU (1) | AU2013208988B2 (ko) |
BR (1) | BR112014016868A8 (ko) |
CA (1) | CA2863071A1 (ko) |
EA (1) | EA027006B1 (ko) |
GB (1) | GB201200355D0 (ko) |
IN (1) | IN2014DN06095A (ko) |
MY (1) | MY167410A (ko) |
SG (1) | SG11201403972VA (ko) |
WO (1) | WO2013104723A1 (ko) |
Families Citing this family (55)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB201021112D0 (en) | 2010-12-13 | 2011-01-26 | Ntnu Technology Transfer As | Nanowires |
GB201211038D0 (en) * | 2012-06-21 | 2012-08-01 | Norwegian Univ Sci & Tech Ntnu | Solar cells |
GB201311101D0 (en) * | 2013-06-21 | 2013-08-07 | Norwegian Univ Sci & Tech Ntnu | Semiconducting Films |
US9373742B2 (en) * | 2014-03-06 | 2016-06-21 | The Regents Of The University Of Michigan | Plasma-assisted techniques for fabricating semiconductor devices |
CN105019027B (zh) * | 2014-04-23 | 2019-04-30 | 长春理工大学 | 用分子束外延(MBE)在GaSb衬底上无催化制备GaSb纳米线的方法 |
JP6187394B2 (ja) * | 2014-06-18 | 2017-08-30 | 富士通株式会社 | 半導体ナノワイヤの製造方法及び半導体ナノワイヤ素子の製造方法 |
CN105990466A (zh) * | 2015-02-03 | 2016-10-05 | 香港城市大学深圳研究院 | 肖特基型垂直纳米线阵列太阳能电池的制作方法 |
CN104760929A (zh) * | 2015-03-10 | 2015-07-08 | 中国科学院上海技术物理研究所 | 一种用作光学微腔的GaSb纳米盘的制备方法 |
JP7066610B2 (ja) * | 2015-07-13 | 2022-05-13 | クラヨナノ エーエス | 発光ダイオードデバイス、光検出デバイス、およびグラファイト基板上のナノワイヤ又はナノピラミッドを含む組成物 |
EA201890168A1 (ru) | 2015-07-13 | 2018-08-31 | Крайонано Ас | Нанопроволока или нанопирамидки, выращенные на графитовой подложке |
WO2017021380A1 (en) * | 2015-07-31 | 2017-02-09 | Crayonano As | Process for growing nanowires or nanopyramids on graphitic substrates |
KR102220421B1 (ko) * | 2015-08-26 | 2021-02-25 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
KR102379701B1 (ko) | 2015-10-19 | 2022-03-28 | 삼성전자주식회사 | 멀티-채널을 갖는 반도체 소자 및 그 형성 방법 |
US9892821B2 (en) | 2016-01-04 | 2018-02-13 | Samsung Electronics Co., Ltd. | Electrical conductors and electronic devices including the same |
DK3427311T3 (da) * | 2016-03-07 | 2020-10-26 | The Univ Of Copenhagen | Fremgangsmåde til fremstilling af en nanostruktureret device ved hjælp af en skyggemaske |
US9711607B1 (en) * | 2016-04-15 | 2017-07-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | One-dimensional nanostructure growth on graphene and devices thereof |
CN105845768B (zh) * | 2016-06-22 | 2017-12-15 | 北京邮电大学 | 一种太阳能电池、太阳能电池的制备方法及装置 |
CN106206212A (zh) * | 2016-07-25 | 2016-12-07 | 六盘水师范学院 | 一种生长可控AlN有序纳米阵列的方法 |
JP2018056381A (ja) * | 2016-09-29 | 2018-04-05 | 富士通株式会社 | 半導体装置及びその製造方法 |
CN106449133B (zh) * | 2016-10-08 | 2020-03-31 | 全普半导体科技(深圳)有限公司 | 单层石墨烯薄膜基复合结构、制备方法及半导体器件 |
GB201701829D0 (en) | 2017-02-03 | 2017-03-22 | Norwegian Univ Of Science And Tech (Ntnu) | Device |
CN107168002A (zh) * | 2017-02-17 | 2017-09-15 | 全普光电科技(上海)有限公司 | 柔性薄膜幕、制备方法、投影方法以及投影仪 |
CN107195703A (zh) * | 2017-02-17 | 2017-09-22 | 全普光电科技(上海)有限公司 | 石墨烯薄膜基光能电池、光能手机 |
JP2018147396A (ja) * | 2017-03-08 | 2018-09-20 | 株式会社ジャパンディスプレイ | 表示装置 |
GB201705755D0 (en) | 2017-04-10 | 2017-05-24 | Norwegian Univ Of Science And Tech (Ntnu) | Nanostructure |
CN107248537A (zh) * | 2017-05-27 | 2017-10-13 | 中国科学院上海技术物理研究所 | 一种最优光电效能的半导体纳米线阵列制备方法 |
KR102520379B1 (ko) | 2017-10-05 | 2023-04-10 | 헥사겜 아베 | 평면의 iii-n 반도체 층을 갖는 반도체 디바이스 및 제작 방법 |
US11177243B2 (en) * | 2018-03-22 | 2021-11-16 | Intel Corporation | Micro light-emitting diode display fabrication and assembly |
CN108511322B (zh) * | 2018-03-29 | 2022-03-29 | 太原理工大学 | 一种在二维石墨衬底上制备GaN薄膜的方法 |
KR20240046921A (ko) * | 2018-04-22 | 2024-04-11 | 에피노바테크 에이비 | 강화 박막 필름 장치 |
WO2019217976A2 (en) * | 2018-04-26 | 2019-11-14 | QMAT, Inc. | Patterning on layer transferred templates |
KR102070072B1 (ko) * | 2018-06-20 | 2020-01-28 | 전북대학교산학협력단 | Iii-v족 화합물 반도체 나노 구조와 그래핀을 이용한 소자 및 이의 제조방법 |
GB201814693D0 (en) | 2018-09-10 | 2018-10-24 | Crayonano As | Semiconductor devices |
CN109768111A (zh) * | 2018-12-13 | 2019-05-17 | 华南理工大学 | 一种GaAs纳米柱-石墨烯肖特基结太阳能电池及其制备方法 |
WO2020171699A1 (en) * | 2019-02-18 | 2020-08-27 | Technische Universiteit Eindhoven | Light-emitting or light-absorbing component |
CN110112233B (zh) * | 2019-05-13 | 2022-04-19 | 唐为华 | 基于银纳米线-石墨烯/氧化镓纳米柱的光电探测结构、器件及制备方法 |
CN110323312B (zh) * | 2019-06-19 | 2021-04-20 | 武汉理工大学 | 一种无机柔性光电子器件结构及其制备方法 |
CN112210768A (zh) * | 2019-07-12 | 2021-01-12 | 中国科学院苏州纳米技术与纳米仿生研究所 | 垂直型β氧化镓纳米线阵列的外延方法 |
GB201910170D0 (en) | 2019-07-16 | 2019-08-28 | Crayonano As | Nanowire device |
CN112331553B (zh) * | 2019-07-16 | 2024-04-05 | 中国科学院苏州纳米技术与纳米仿生研究所 | 纳米线单片外延集成结构、制作方法与应用 |
GB201913701D0 (en) | 2019-09-23 | 2019-11-06 | Crayonano As | Composition of matter |
US11384286B2 (en) * | 2019-09-30 | 2022-07-12 | North Carolina A&T State University | GaAs1-xSbx nanowires on a graphitic substrate |
EP3836227A1 (en) | 2019-12-11 | 2021-06-16 | Epinovatech AB | Semiconductor layer structure |
EP3866189B1 (en) | 2020-02-14 | 2022-09-28 | Epinovatech AB | A mmic front-end module |
EP3879706A1 (en) | 2020-03-13 | 2021-09-15 | Epinovatech AB | Field-programmable gate array device |
CN113363174A (zh) * | 2020-05-27 | 2021-09-07 | 台湾积体电路制造股份有限公司 | 半导体器件及其形成方法 |
CN112071759B (zh) * | 2020-09-14 | 2021-10-15 | 山东大学 | 一种提高p型场效应晶体管空穴迁移率的方法 |
CN112802930B (zh) * | 2021-04-15 | 2021-07-06 | 至芯半导体(杭州)有限公司 | Iii族氮化物衬底制备方法和半导体器件 |
CN113278933B (zh) * | 2021-04-23 | 2022-09-13 | 重庆交通大学绿色航空技术研究院 | 一种图案化的碳化硅纳米线和硅纳米线一维复合材料及其制备方法 |
EP4101945B1 (en) | 2021-06-09 | 2024-05-15 | Epinovatech AB | A device for performing electrolysis of water, and a system thereof |
FR3124024A1 (fr) * | 2021-06-11 | 2022-12-16 | Aledia | Procédé de fabrication d’un dispositif optoélectronique |
WO2023037490A1 (ja) * | 2021-09-10 | 2023-03-16 | 日本電信電話株式会社 | ナノワイヤおよびその製造方法 |
CN114038898A (zh) * | 2021-09-24 | 2022-02-11 | 威科赛乐微电子股份有限公司 | 一种GaAs复合型纳米线的制备方法 |
GB202212397D0 (en) | 2022-08-25 | 2022-10-12 | Crayonano As | Nanowire device with mask layer |
CN115354277B (zh) * | 2022-08-29 | 2023-12-08 | 复旦大学 | 一种卷对卷式的薄膜脱附方法、卷曲薄膜及其应用 |
Family Cites Families (68)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2273552A3 (en) | 2001-03-30 | 2013-04-10 | The Regents of the University of California | Methods of fabricating nanstructures and nanowires and devices fabricated therefrom |
JP3823784B2 (ja) | 2001-09-06 | 2006-09-20 | 富士ゼロックス株式会社 | ナノワイヤーおよびその製造方法、並びにそれを用いたナノネットワーク、ナノネットワークの製造方法、炭素構造体、電子デバイス |
US7594982B1 (en) | 2002-06-22 | 2009-09-29 | Nanosolar, Inc. | Nanostructured transparent conducting electrode |
CA2522358A1 (en) * | 2003-04-04 | 2004-10-14 | Startskottet 22286 Ab | Precisely positioned nanowhiskers and nanowhisker arrays and method for preparing them |
US7354850B2 (en) * | 2004-02-06 | 2008-04-08 | Qunano Ab | Directionally controlled growth of nanowhiskers |
US7528002B2 (en) | 2004-06-25 | 2009-05-05 | Qunano Ab | Formation of nanowhiskers on a substrate of dissimilar material |
US7939218B2 (en) | 2004-12-09 | 2011-05-10 | Nanosys, Inc. | Nanowire structures comprising carbon |
KR101405353B1 (ko) | 2004-12-09 | 2014-06-11 | 원드 매터리얼 엘엘씨 | 연료 전지용의 나노와이어 기반 막 전극 조립체 |
ATE528811T1 (de) | 2005-11-21 | 2011-10-15 | Nanosys Inc | Nanodraht-strukturen mit kohlenstoff |
CN101331590B (zh) * | 2005-12-29 | 2011-04-20 | 纳米系统公司 | 用于在有图案基底上取向生长纳米线的方法 |
US7570355B2 (en) * | 2006-01-27 | 2009-08-04 | Hewlett-Packard Development Company, L.P. | Nanowire heterostructures and methods of forming the same |
FR2904146B1 (fr) * | 2006-07-20 | 2008-10-17 | Commissariat Energie Atomique | Procede de fabrication d'une nanostructure a base de nanofils interconnectes,nanostructure et utilisation comme convertisseur thermoelectrique |
US7442575B2 (en) * | 2006-09-29 | 2008-10-28 | Texas Christian University | Method of manufacturing semiconductor nanowires |
WO2008140611A2 (en) | 2006-12-18 | 2008-11-20 | The Regents Of The University Of California | Nanowire array-based light emitting diodes and lasers |
US20080191317A1 (en) * | 2007-02-13 | 2008-08-14 | International Business Machines Corporation | Self-aligned epitaxial growth of semiconductor nanowires |
CN101687631A (zh) * | 2007-03-28 | 2010-03-31 | 昆南诺股份有限公司 | 纳米线电路结构 |
KR100904588B1 (ko) * | 2007-07-05 | 2009-06-25 | 삼성전자주식회사 | 코어/쉘 형태의 나노와이어를 제조하는 방법, 그에 의해제조된 나노와이어 및 이를 포함하는 나노와이어 소자 |
US7714317B2 (en) * | 2007-08-30 | 2010-05-11 | Brookhaven Science Associates, Llc | Assembly of ordered carbon shells on semiconducting nanomaterials |
EP2200934A4 (en) * | 2007-10-26 | 2012-10-17 | Qunano Ab | GROWTH OF NANOWILS ON DISSIMILAR MATERIAL |
US8273983B2 (en) * | 2007-12-21 | 2012-09-25 | Hewlett-Packard Development Company, L.P. | Photonic device and method of making same using nanowires |
US8435676B2 (en) | 2008-01-09 | 2013-05-07 | Nanotek Instruments, Inc. | Mixed nano-filament electrode materials for lithium ion batteries |
KR101445877B1 (ko) | 2008-03-24 | 2014-09-29 | 삼성전자주식회사 | 산화아연 나노와이어의 제조방법 |
TW200952184A (en) * | 2008-06-03 | 2009-12-16 | Univ Nat Taiwan | Structure of mixed type heterojunction thin film solar cells and its manufacturing method |
US8735797B2 (en) * | 2009-12-08 | 2014-05-27 | Zena Technologies, Inc. | Nanowire photo-detector grown on a back-side illuminated image sensor |
KR101071906B1 (ko) * | 2008-11-14 | 2011-10-11 | 한국과학기술원 | 단결정 게르마늄코발트 나노와이어, 게르마늄코발트 나노와이어 구조체, 및 이들의 제조방법 |
US8389387B2 (en) * | 2009-01-06 | 2013-03-05 | Brookhaven Science Associates, Llc | Segmented nanowires displaying locally controllable properties |
KR101650310B1 (ko) | 2009-01-16 | 2016-08-24 | 삼성전자주식회사 | 도광부재 및 이를 구비하는 제전유닛, 화상형성장치, 화상독취장치 |
US20110220171A1 (en) * | 2009-01-30 | 2011-09-15 | Mathai Sagi V | Photovoltaic Structure and Solar Cell and Method of Fabrication Employing Hidden Electrode |
FR2941688B1 (fr) * | 2009-01-30 | 2011-04-01 | Commissariat Energie Atomique | Procede de formation de nano-fils |
WO2010096035A1 (en) | 2009-02-23 | 2010-08-26 | Nanosys, Inc. | Nanostructured catalyst supports |
WO2010138506A1 (en) * | 2009-05-26 | 2010-12-02 | Nanosys, Inc. | Methods and systems for electric field deposition of nanowires and other devices |
WO2010141348A1 (en) * | 2009-05-31 | 2010-12-09 | College Of William And Mary | Method for making polymer composites containing graphene sheets |
JP5299105B2 (ja) * | 2009-06-16 | 2013-09-25 | ソニー株式会社 | 二酸化バナジウムナノワイヤとその製造方法、及び二酸化バナジウムナノワイヤを用いたナノワイヤデバイス |
CN102482076B (zh) * | 2009-08-03 | 2014-12-24 | 仁济大学校产学协力团 | 新型结构的碳纳米复合体及其制造方法 |
US8507797B2 (en) * | 2009-08-07 | 2013-08-13 | Guardian Industries Corp. | Large area deposition and doping of graphene, and products including the same |
KR20110057989A (ko) * | 2009-11-25 | 2011-06-01 | 삼성전자주식회사 | 그래핀과 나노구조체의 복합 구조체 및 그 제조방법 |
US9306099B2 (en) * | 2009-12-01 | 2016-04-05 | Samsung Electronics Co., Ltd. | Material including graphene and an inorganic material and method of manufacturing the material |
KR101234180B1 (ko) * | 2009-12-30 | 2013-02-18 | 그래핀스퀘어 주식회사 | 그래핀 필름의 롤투롤 도핑 방법 및 도핑된 그래핀 필름 |
US8377729B2 (en) * | 2010-01-19 | 2013-02-19 | Eastman Kodak Company | Forming II-VI core-shell semiconductor nanowires |
US8212236B2 (en) * | 2010-01-19 | 2012-07-03 | Eastman Kodak Company | II-VI core-shell semiconductor nanowires |
WO2011090863A1 (en) | 2010-01-19 | 2011-07-28 | Eastman Kodak Company | Ii-vi core-shell semiconductor nanowires |
US20110240099A1 (en) * | 2010-03-30 | 2011-10-06 | Ellinger Carolyn R | Photovoltaic nanowire device |
JP2011233714A (ja) | 2010-04-27 | 2011-11-17 | Canon Inc | 半導体素子 |
CN103118777B (zh) * | 2010-05-24 | 2016-06-29 | 希路瑞亚技术公司 | 纳米线催化剂 |
JP2012015481A (ja) | 2010-06-01 | 2012-01-19 | Sony Corp | 電界効果トランジスタの製造方法、電界効果トランジスタおよび半導体酸化グラフェンの製造方法 |
KR101781552B1 (ko) * | 2010-06-21 | 2017-09-27 | 삼성전자주식회사 | 보론 및 질소로 치환된 그라핀 및 제조방법과, 이를 구비한 트랜지스터 |
EP2586062A4 (en) * | 2010-06-24 | 2015-06-03 | Glo Ab | SUBSTRATE WITH BUFFER LAYER FOR ALIGNED NANODRAHT GROWTH |
JP5988974B2 (ja) | 2010-08-07 | 2016-09-07 | ティーピーケイ ホールディング カンパニー リミテッド | 表面埋込添加物を有する素子構成要素および関連製造方法 |
CN102376817A (zh) | 2010-08-11 | 2012-03-14 | 王浩 | 一种半导体光电器件的制备方法 |
US8901536B2 (en) * | 2010-09-21 | 2014-12-02 | The United States Of America, As Represented By The Secretary Of The Navy | Transistor having graphene base |
US8321961B2 (en) * | 2010-10-07 | 2012-11-27 | International Business Machines Corporation | Production scale fabrication method for high resolution AFM tips |
KR101142545B1 (ko) | 2010-10-25 | 2012-05-08 | 서울대학교산학협력단 | 태양전지 및 그 제조 방법 |
US20120141799A1 (en) | 2010-12-03 | 2012-06-07 | Francis Kub | Film on Graphene on a Substrate and Method and Devices Therefor |
GB201021112D0 (en) | 2010-12-13 | 2011-01-26 | Ntnu Technology Transfer As | Nanowires |
KR20120065792A (ko) * | 2010-12-13 | 2012-06-21 | 삼성전자주식회사 | 나노 센서 및 그의 제조 방법 |
KR101227600B1 (ko) | 2011-02-11 | 2013-01-29 | 서울대학교산학협력단 | 그래핀-나노와이어 하이브리드 구조체에 기반한 광센서 및 이의 제조방법 |
US8591990B2 (en) * | 2011-03-25 | 2013-11-26 | GM Global Technology Operations LLC | Microfiber supported metal silicide nanowires |
JP6139511B2 (ja) * | 2011-05-06 | 2017-05-31 | ザ・リサーチ・ファウンデーション・フォー・ザ・ステイト・ユニヴァーシティ・オブ・ニューヨーク | 磁性グラフェン様ナノ粒子あるいは黒鉛ナノまたは微小粒子、およびそれらの生産および使用方法 |
US9564579B2 (en) * | 2011-05-27 | 2017-02-07 | University Of North Texas | Graphene magnetic tunnel junction spin filters and methods of making |
WO2012167282A1 (en) * | 2011-06-02 | 2012-12-06 | Brown University | High-efficiency silicon-compatible photodetectors based on ge quantumdots and ge/si hetero-nanowires |
KR101305705B1 (ko) * | 2011-07-12 | 2013-09-09 | 엘지이노텍 주식회사 | 터치 패널 및 전극 제조 방법 |
US20130020623A1 (en) * | 2011-07-18 | 2013-01-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and method for single gate non-volatile memory device |
WO2013052541A2 (en) * | 2011-10-04 | 2013-04-11 | Arizona Board Of Regents, A Body Corporate Of The State Of Arizona Acting For And On Behalf Of Arizona State University | Quantum dots, rods, wires, sheets, and ribbons, and uses thereof |
US8440350B1 (en) * | 2011-11-10 | 2013-05-14 | GM Global Technology Operations LLC | Lithium-ion battery electrodes with shape-memory-alloy current collecting substrates |
EP2785458A2 (en) * | 2011-11-29 | 2014-10-08 | Siluria Technologies, Inc. | Nanowire catalysts and methods for their use and preparation |
TW201344749A (zh) * | 2012-04-23 | 2013-11-01 | Nanocrystal Asia Inc | 以塡膠燒結方式製造選擇性成長遮罩之方法 |
GB201211038D0 (en) * | 2012-06-21 | 2012-08-01 | Norwegian Univ Sci & Tech Ntnu | Solar cells |
EP2922891A1 (en) * | 2012-11-26 | 2015-09-30 | Massachusetts Institute of Technology | Nanowire-modified graphene and methods of making and using same |
-
2012
- 2012-01-10 GB GBGB1200355.4A patent/GB201200355D0/en not_active Ceased
-
2013
- 2013-01-10 CN CN201380005173.6A patent/CN104145340B/zh active Active
- 2013-01-10 IN IN6095DEN2014 patent/IN2014DN06095A/en unknown
- 2013-01-10 EP EP13700167.3A patent/EP2803091B1/en active Active
- 2013-01-10 MY MYPI2014002050A patent/MY167410A/en unknown
- 2013-01-10 US US14/371,621 patent/US10243104B2/en active Active
- 2013-01-10 EA EA201491232A patent/EA027006B1/ru not_active IP Right Cessation
- 2013-01-10 CA CA2863071A patent/CA2863071A1/en not_active Abandoned
- 2013-01-10 KR KR1020147022217A patent/KR102025548B1/ko active IP Right Grant
- 2013-01-10 JP JP2014551616A patent/JP6147277B2/ja active Active
- 2013-01-10 BR BR112014016868A patent/BR112014016868A8/pt not_active Application Discontinuation
- 2013-01-10 SG SG11201403972VA patent/SG11201403972VA/en unknown
- 2013-01-10 AU AU2013208988A patent/AU2013208988B2/en not_active Ceased
- 2013-01-10 WO PCT/EP2013/050419 patent/WO2013104723A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
BR112014016868A8 (pt) | 2017-07-04 |
CN104145340A (zh) | 2014-11-12 |
US10243104B2 (en) | 2019-03-26 |
EA201491232A1 (ru) | 2014-12-30 |
AU2013208988A1 (en) | 2014-08-21 |
JP6147277B2 (ja) | 2017-06-14 |
AU2013208988B2 (en) | 2015-07-09 |
KR102025548B1 (ko) | 2019-11-04 |
IN2014DN06095A (ko) | 2015-08-14 |
WO2013104723A1 (en) | 2013-07-18 |
CA2863071A1 (en) | 2013-07-18 |
EA027006B1 (ru) | 2017-06-30 |
JP2015503852A (ja) | 2015-02-02 |
KR20140112061A (ko) | 2014-09-22 |
CN104145340B (zh) | 2018-03-16 |
MY167410A (en) | 2018-08-21 |
EP2803091A1 (en) | 2014-11-19 |
BR112014016868A2 (pt) | 2017-06-13 |
GB201200355D0 (en) | 2012-02-22 |
US20150076450A1 (en) | 2015-03-19 |
EP2803091B1 (en) | 2020-12-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG11201403972VA (en) | A nanowire device having graphene top and bottom electrodes and method of making such a device | |
HK1216657A1 (zh) | 基於石墨烯的電極及應用 | |
ZA201601524B (en) | Production of graphene and graphane | |
HK1219573A1 (zh) | 用於製造電極的方法和使用這樣的方法製造的電極 | |
GB201219729D0 (en) | Device and method of forming a device | |
HK1197318A1 (en) | Electrode body fabrication device and method | |
GB2505788B (en) | Structure and method of making graphene nanoribbons | |
SG11201405573WA (en) | Production of graphene | |
EP2814303A4 (en) | ELECTRODE SHEET AND ELECTRONIC DEVICE | |
GB2520496B (en) | Production of graphene oxide | |
GB2499314B (en) | Replacement-gate finfet structure and process | |
EP2696431A4 (en) | ELECTRODE STACKING DEVICE AND ELECTRODE STACKING METHOD | |
EP2825896A4 (en) | SENSOR AND METHOD FOR MANUFACTURING A SENSOR | |
EP2768425A4 (en) | METHODS AND DEVICES FOR LINKING NERFS | |
EP2911229A4 (en) | SECONDARY BATTERY MANUFACTURING METHOD AND MANUFACTURER | |
EP2835979A4 (en) | METHOD AND DEVICE FOR ADJUSTING ATTRIBUTES | |
EP2908701A4 (en) | DAMPING DEVICE AND METHOD FOR DAMPING A BODY | |
SG11201501005YA (en) | Vibrating device and manufacturing method therefor | |
EP2844038A4 (en) | ELECTRODE SHEET AND ELECTRONIC DEVICE | |
EP2696400A4 (en) | DEVICE FOR PRODUCING BATTERY ELECTRODES AND METHOD THEREFOR | |
AP4048A (en) | Method of manufacturing a launder and launder | |
PL3077192T3 (pl) | Uszczelnialne opakowania oraz ich wytwarzanie | |
PL2836460T3 (pl) | Sposób wytwarzania grafenu | |
EP2819496A4 (en) | METHOD OF DETERMINING PRODUCTION PLAN AND DEVICE FOR DETERMINING | |
TWI560755B (en) | Touch sensing electrode structure and manufacturing method thereof |