CN107195703A - 石墨烯薄膜基光能电池、光能手机 - Google Patents
石墨烯薄膜基光能电池、光能手机 Download PDFInfo
- Publication number
- CN107195703A CN107195703A CN201710537467.3A CN201710537467A CN107195703A CN 107195703 A CN107195703 A CN 107195703A CN 201710537467 A CN201710537467 A CN 201710537467A CN 107195703 A CN107195703 A CN 107195703A
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- China
- Prior art keywords
- membrane electrode
- graphene
- light energy
- film base
- energy battery
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 192
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 191
- 239000012528 membrane Substances 0.000 claims abstract description 128
- 238000006243 chemical reaction Methods 0.000 claims abstract description 44
- 238000000605 extraction Methods 0.000 claims abstract description 7
- 239000007784 solid electrolyte Substances 0.000 claims abstract description 6
- 239000010408 film Substances 0.000 claims description 73
- 239000010410 layer Substances 0.000 claims description 38
- 239000010409 thin film Substances 0.000 claims description 17
- 150000001336 alkenes Chemical class 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 12
- 229910001069 Ti alloy Inorganic materials 0.000 claims description 10
- 230000005611 electricity Effects 0.000 claims description 10
- 239000004575 stone Substances 0.000 claims description 10
- 229910002804 graphite Inorganic materials 0.000 claims description 7
- 239000010439 graphite Substances 0.000 claims description 7
- -1 graphite Alkene Chemical class 0.000 claims description 5
- 229910000765 intermetallic Inorganic materials 0.000 claims description 5
- 230000005622 photoelectricity Effects 0.000 claims description 5
- 239000002356 single layer Substances 0.000 claims description 4
- 238000005452 bending Methods 0.000 claims description 3
- 230000003139 buffering effect Effects 0.000 claims description 3
- 230000005693 optoelectronics Effects 0.000 claims description 3
- 240000007594 Oryza sativa Species 0.000 claims description 2
- 235000007164 Oryza sativa Nutrition 0.000 claims description 2
- 235000009566 rice Nutrition 0.000 claims description 2
- 230000007704 transition Effects 0.000 claims description 2
- 239000003792 electrolyte Substances 0.000 claims 1
- 239000007787 solid Substances 0.000 claims 1
- 150000002500 ions Chemical class 0.000 description 5
- 238000004146 energy storage Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000009738 saturating Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910000428 cobalt oxide Inorganic materials 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
Claims (17)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710085667X | 2017-02-17 | ||
CN201710085667 | 2017-02-17 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN107195703A true CN107195703A (zh) | 2017-09-22 |
Family
ID=59880359
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710537467.3A Pending CN107195703A (zh) | 2017-02-17 | 2017-07-04 | 石墨烯薄膜基光能电池、光能手机 |
CN201720801941.4U Expired - Fee Related CN206976361U (zh) | 2017-02-17 | 2017-07-04 | 石墨烯薄膜基光能电池、光能手机 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201720801941.4U Expired - Fee Related CN206976361U (zh) | 2017-02-17 | 2017-07-04 | 石墨烯薄膜基光能电池、光能手机 |
Country Status (1)
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CN (2) | CN107195703A (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109900657A (zh) * | 2019-02-27 | 2019-06-18 | 深圳大学 | 一种测试薄膜电极材料结构变化的方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107195703A (zh) * | 2017-02-17 | 2017-09-22 | 全普光电科技(上海)有限公司 | 石墨烯薄膜基光能电池、光能手机 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003084281A (ja) * | 2001-09-12 | 2003-03-19 | Sharp Corp | 携帯端末機器 |
KR20040026183A (ko) * | 2002-09-23 | 2004-03-30 | 최사용 | 솔라셀을 이용한 전원장치 및 그 제조방법 |
CN102361103A (zh) * | 2011-10-26 | 2012-02-22 | 杨武保 | 光伏二次电池 |
CN104145340A (zh) * | 2012-01-10 | 2014-11-12 | 挪威科技大学 | 具有石墨烯顶部电极和底部电极的纳米线装置以及制造该装置的方法 |
CN104616905A (zh) * | 2015-01-09 | 2015-05-13 | 东南大学 | 聚苯胺-碳层-氮化钛纳米线阵列复合材料及其制备方法和应用 |
CN104638034A (zh) * | 2015-02-13 | 2015-05-20 | 中国科学院重庆绿色智能技术研究院 | 一种柔性薄膜太阳能电池 |
WO2015102716A2 (en) * | 2013-10-09 | 2015-07-09 | Fastcap Systems Corporation | Advanced electrolytes for high temperature energy storage device |
WO2015147492A1 (ko) * | 2014-03-28 | 2015-10-01 | 예스세븐 다이아몬드 | 그래핀 시트를 활용한 스마트폰 케이스 |
CN206976361U (zh) * | 2017-02-17 | 2018-02-06 | 全普光电科技(上海)有限公司 | 石墨烯薄膜基光能电池、光能手机 |
-
2017
- 2017-07-04 CN CN201710537467.3A patent/CN107195703A/zh active Pending
- 2017-07-04 CN CN201720801941.4U patent/CN206976361U/zh not_active Expired - Fee Related
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003084281A (ja) * | 2001-09-12 | 2003-03-19 | Sharp Corp | 携帯端末機器 |
KR20040026183A (ko) * | 2002-09-23 | 2004-03-30 | 최사용 | 솔라셀을 이용한 전원장치 및 그 제조방법 |
CN102361103A (zh) * | 2011-10-26 | 2012-02-22 | 杨武保 | 光伏二次电池 |
CN104145340A (zh) * | 2012-01-10 | 2014-11-12 | 挪威科技大学 | 具有石墨烯顶部电极和底部电极的纳米线装置以及制造该装置的方法 |
WO2015102716A2 (en) * | 2013-10-09 | 2015-07-09 | Fastcap Systems Corporation | Advanced electrolytes for high temperature energy storage device |
WO2015147492A1 (ko) * | 2014-03-28 | 2015-10-01 | 예스세븐 다이아몬드 | 그래핀 시트를 활용한 스마트폰 케이스 |
CN104616905A (zh) * | 2015-01-09 | 2015-05-13 | 东南大学 | 聚苯胺-碳层-氮化钛纳米线阵列复合材料及其制备方法和应用 |
CN104638034A (zh) * | 2015-02-13 | 2015-05-20 | 中国科学院重庆绿色智能技术研究院 | 一种柔性薄膜太阳能电池 |
CN206976361U (zh) * | 2017-02-17 | 2018-02-06 | 全普光电科技(上海)有限公司 | 石墨烯薄膜基光能电池、光能手机 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109900657A (zh) * | 2019-02-27 | 2019-06-18 | 深圳大学 | 一种测试薄膜电极材料结构变化的方法 |
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Publication number | Publication date |
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CN206976361U (zh) | 2018-02-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20190822 Address after: 518000 44 storey Longgang Venture Capital Building, Tengfei Road, Longgang District, Shenzhen City, Guangdong Province Applicant after: Quanpu Semiconductor Technology (Shenzhen) Co., Ltd. Address before: 201203 No. 1185 Huyi Highway, Nanxiang Town, Jiading District, Shanghai Applicant before: QUALPER OPTOELECTRONICS TECHNOLOGY (SHANGHAI) CO., LTD. |
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TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20190923 Address after: 518000 44 storey Longgang Venture Capital Building, Tengfei Road, Longgang District, Shenzhen City, Guangdong Province Applicant after: Quanpu Semiconductor Technology (Shenzhen) Co., Ltd. Address before: 201203 No. 1185 Huyi Highway, Nanxiang Town, Jiading District, Shanghai Applicant before: Quanpu Photoelectric Technology (Shanghai) Co., Ltd. |