SG11201402224WA - Polishing pad with foundation layer and polishing surface layer - Google Patents

Polishing pad with foundation layer and polishing surface layer

Info

Publication number
SG11201402224WA
SG11201402224WA SG11201402224WA SG11201402224WA SG11201402224WA SG 11201402224W A SG11201402224W A SG 11201402224WA SG 11201402224W A SG11201402224W A SG 11201402224WA SG 11201402224W A SG11201402224W A SG 11201402224WA SG 11201402224W A SG11201402224W A SG 11201402224WA
Authority
SG
Singapore
Prior art keywords
layer
polishing
surface layer
foundation
polishing pad
Prior art date
Application number
SG11201402224WA
Other languages
English (en)
Inventor
William C Allison
Diane Scott
Paul Andre Lefevre
James P Lacasse
Alexander William Simpson
Original Assignee
Nexplanar Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/306,849 external-priority patent/US9067298B2/en
Priority claimed from US13/306,845 external-priority patent/US9067297B2/en
Application filed by Nexplanar Corp filed Critical Nexplanar Corp
Publication of SG11201402224WA publication Critical patent/SG11201402224WA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/22—Lapping pads for working plane surfaces characterised by a multi-layered structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
    • B24D18/0009—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for using moulds or presses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG11201402224WA 2011-11-29 2012-05-16 Polishing pad with foundation layer and polishing surface layer SG11201402224WA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/306,849 US9067298B2 (en) 2011-11-29 2011-11-29 Polishing pad with grooved foundation layer and polishing surface layer
US13/306,845 US9067297B2 (en) 2011-11-29 2011-11-29 Polishing pad with foundation layer and polishing surface layer
PCT/US2012/038211 WO2013081665A2 (en) 2011-11-29 2012-05-16 Polishing pad with foundation layer and polishing surface layer

Publications (1)

Publication Number Publication Date
SG11201402224WA true SG11201402224WA (en) 2014-09-26

Family

ID=46147791

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201508090WA SG10201508090WA (en) 2011-11-29 2012-05-16 Polishing pad with foundation layer and polishing surface layer
SG11201402224WA SG11201402224WA (en) 2011-11-29 2012-05-16 Polishing pad with foundation layer and polishing surface layer

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG10201508090WA SG10201508090WA (en) 2011-11-29 2012-05-16 Polishing pad with foundation layer and polishing surface layer

Country Status (7)

Country Link
EP (1) EP2785496B1 (zh)
JP (3) JP6309453B2 (zh)
KR (3) KR101819539B1 (zh)
CN (2) CN105773400B (zh)
SG (2) SG10201508090WA (zh)
TW (2) TWI608898B (zh)
WO (1) WO2013081665A2 (zh)

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US10399201B2 (en) 2014-10-17 2019-09-03 Applied Materials, Inc. Advanced polishing pads having compositional gradients by use of an additive manufacturing process
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
US10875145B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Polishing pads produced by an additive manufacturing process
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CN109015435A (zh) * 2018-09-10 2018-12-18 台山市远鹏研磨科技有限公司 一种金刚石塔型砂纸
CN109434568A (zh) * 2018-10-23 2019-03-08 青岛韬谱光学科技有限公司 一种高面型高粗糙度的光学器件抛光方法
CN109571302B (zh) * 2018-11-21 2021-08-03 华侨大学 一种基于拉伸强度的半固结磨料抛光工具界面结合强度的表征方法
WO2020242172A1 (ko) * 2019-05-29 2020-12-03 한국생산기술연구원 패턴구조를 갖는 화학기계적 연마용 패드
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CN114701105B (zh) * 2021-04-27 2024-04-19 宁波赢伟泰科新材料有限公司 一种化学机械抛光垫及其制备方法
CN113334243B (zh) * 2021-06-03 2023-03-31 万华化学集团电子材料有限公司 化学机械抛光垫、制备方法及其应用
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Also Published As

Publication number Publication date
KR20140097486A (ko) 2014-08-06
SG10201508090WA (en) 2015-10-29
KR101819539B1 (ko) 2018-01-17
JP6805191B2 (ja) 2020-12-23
EP2785496B1 (en) 2021-11-24
KR101685678B1 (ko) 2016-12-12
CN105773400B (zh) 2019-10-25
JP6200530B2 (ja) 2017-09-20
KR20150103327A (ko) 2015-09-09
JP2016104511A (ja) 2016-06-09
EP2785496A2 (en) 2014-10-08
JP2018082213A (ja) 2018-05-24
CN105773400A (zh) 2016-07-20
JP2015503232A (ja) 2015-01-29
CN104105575B (zh) 2017-11-14
WO2013081665A2 (en) 2013-06-06
JP6309453B2 (ja) 2018-04-11
TWI608898B (zh) 2017-12-21
TWI513545B (zh) 2015-12-21
KR20160098520A (ko) 2016-08-18
CN104105575A (zh) 2014-10-15
TW201534429A (zh) 2015-09-16
TW201321131A (zh) 2013-06-01
KR101825734B1 (ko) 2018-02-05

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