SG10201912610SA - A method for transferring a useful layer - Google Patents

A method for transferring a useful layer

Info

Publication number
SG10201912610SA
SG10201912610SA SG10201912610SA SG10201912610SA SG10201912610SA SG 10201912610S A SG10201912610S A SG 10201912610SA SG 10201912610S A SG10201912610S A SG 10201912610SA SG 10201912610S A SG10201912610S A SG 10201912610SA SG 10201912610S A SG10201912610S A SG 10201912610SA
Authority
SG
Singapore
Prior art keywords
transferring
useful layer
useful
layer
Prior art date
Application number
SG10201912610SA
Other languages
English (en)
Inventor
Didier Landru
Mohamed Nadia Ben
Oleg Kononchuk
Frédéric Mazen
Damien Massy
Shay Reboh
François Rieutord
Original Assignee
Soitec Silicon On Insulator
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec Silicon On Insulator, Commissariat Energie Atomique filed Critical Soitec Silicon On Insulator
Publication of SG10201912610SA publication Critical patent/SG10201912610SA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/00158—Diaphragms, membranes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
    • B81C2201/0191—Transfer of a layer from a carrier wafer to a device wafer
    • B81C2201/0192—Transfer of a layer from a carrier wafer to a device wafer by cleaving the carrier wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Micromachines (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
  • Jigging Conveyors (AREA)
SG10201912610SA 2016-08-11 2017-08-01 A method for transferring a useful layer SG10201912610SA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1657722A FR3055063B1 (fr) 2016-08-11 2016-08-11 Procede de transfert d'une couche utile

Publications (1)

Publication Number Publication Date
SG10201912610SA true SG10201912610SA (en) 2020-02-27

Family

ID=57121393

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201912610SA SG10201912610SA (en) 2016-08-11 2017-08-01 A method for transferring a useful layer
SG11201901108PA SG11201901108PA (en) 2016-08-11 2017-08-01 A method for transferring a useful layer

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG11201901108PA SG11201901108PA (en) 2016-08-11 2017-08-01 A method for transferring a useful layer

Country Status (9)

Country Link
US (2) US10950491B2 (zh)
EP (1) EP3497713B1 (zh)
JP (1) JP6977023B2 (zh)
KR (1) KR102489395B1 (zh)
CN (1) CN109564891B (zh)
FR (1) FR3055063B1 (zh)
SG (2) SG10201912610SA (zh)
TW (1) TWI738834B (zh)
WO (1) WO2018029419A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3091032B1 (fr) * 2018-12-20 2020-12-11 Soitec Silicon On Insulator Procédé de transfert d’une couche superficielle sur des cavités
FR3091620B1 (fr) 2019-01-07 2021-01-29 Commissariat Energie Atomique Procédé de transfert de couche avec réduction localisée d’une capacité à initier une fracture

Family Cites Families (75)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4739276A (en) 1986-06-12 1988-04-19 Maris Graube Method and apparatus for digital time domain reflectometry
US4970466A (en) 1989-03-22 1990-11-13 Microtest, Inc. TDR cable testing apparatus with pulse timing manipulation to automatically compensate for diverse cable characteristics
US5134377A (en) 1991-06-04 1992-07-28 W. L. Gore & Associates, Inc. TDR system and method for detecting leakage of a liquid
JP3201799B2 (ja) * 1991-11-18 2001-08-27 東京磁気印刷株式会社 感熱記録印字層を有する記録媒体
US5357145A (en) 1992-12-22 1994-10-18 National Semiconductor Corporation Integrated waveshaping circuit using weighted current summing
US5381348A (en) 1993-01-11 1995-01-10 Fluke Corporation Token ring local area network testing apparatus using time delay reflectory
JP2752030B2 (ja) 1993-04-16 1998-05-18 沖電気工業株式会社 ローカルエリアネットワーク回線における信号送受信装置
US5784573A (en) 1994-11-04 1998-07-21 Texas Instruments Incorporated Multi-protocol local area network controller
US5784559A (en) 1995-11-06 1998-07-21 Sun Microsystems, Inc. Full duplex flow control for ethernet networks
JPH1013200A (ja) 1996-06-26 1998-01-16 Mitsubishi Electric Corp 可変遅延回路
US6159825A (en) 1997-05-12 2000-12-12 Silicon Genesis Corporation Controlled cleavage thin film separation process using a reusable substrate
TW437078B (en) * 1998-02-18 2001-05-28 Canon Kk Composite member, its separation method, and preparation method of semiconductor substrate by utilization thereof
JP3031904B2 (ja) * 1998-02-18 2000-04-10 キヤノン株式会社 複合部材とその分離方法、及びそれを利用した半導体基体の製造方法
US6385208B1 (en) 1998-06-02 2002-05-07 Cisco Technology, Inc. Serial media independent interface
US6735217B1 (en) 1998-09-15 2004-05-11 Tut Systems, Inc. Method and apparatus for detecting collisions on a network using multi-cycle waveform pulses
JP4118463B2 (ja) 1999-07-23 2008-07-16 株式会社アドバンテスト タイミング保持機能を搭載したｉｃ試験装置
FR2797347B1 (fr) * 1999-08-04 2001-11-23 Commissariat Energie Atomique Procede de transfert d'une couche mince comportant une etape de surfragililisation
US7110423B1 (en) 1999-11-29 2006-09-19 Cisco Technology, Inc. Method and system for source synchronous clocking
US6691241B1 (en) 1999-12-21 2004-02-10 Intel Corporation Delay tuning to improve timing in multi-load systems
US6459739B1 (en) 1999-12-30 2002-10-01 Tioga Technologies Inc. Method and apparatus for RF common-mode noise rejection in a DSL receiver
US6920132B1 (en) 2000-05-30 2005-07-19 Marvell International Ltd. Reduced pin gigabit media independent interface
US6973094B1 (en) 2000-09-29 2005-12-06 Broadcom Corporation Packet-switched multiple-access network system with distributed fair priority queuing
US7045878B2 (en) * 2001-05-18 2006-05-16 Reveo, Inc. Selectively bonded thin film layer and substrate layer for processing of useful devices
FR2835097B1 (fr) * 2002-01-23 2005-10-14 Procede optimise de report d'une couche mince de carbure de silicium sur un substrat d'accueil
KR100441885B1 (ko) 2002-04-17 2004-07-27 한국전자통신연구원 홈네트워크 시스템에서 타임 슬롯 생성 장치 및 그 방법
EP1523773B1 (en) * 2002-07-17 2010-09-22 S.O.I.Tec Silicon on Insulator Technologies Method of smoothing the outline of a useful layer of material transferred onto a support substrate
AU2003254543A1 (en) * 2002-07-17 2004-02-02 S.O.I.Tec Silicon On Insulator Technologies A method of increasing the area of a useful layer of material transferred onto a support
US20040028164A1 (en) 2002-08-07 2004-02-12 Hongtao Jiang System and method for data transition control in a multirate communication system
FR2892228B1 (fr) * 2005-10-18 2008-01-25 Soitec Silicon On Insulator Procede de recyclage d'une plaquette donneuse epitaxiee
US7164274B2 (en) 2003-06-11 2007-01-16 Broadcom Corporation Cable diagnostics using time domain reflectometry and applications using the same
EP1667389A1 (en) 2003-08-04 2006-06-07 Advantest Corporation Testing method, communication device and testing system
GB2407006A (en) 2003-10-08 2005-04-13 Sony Uk Ltd Communicating streamed payload data and packet based auxiliary data
FR2861497B1 (fr) * 2003-10-28 2006-02-10 Soitec Silicon On Insulator Procede de transfert catastrophique d'une couche fine apres co-implantation
KR100550796B1 (ko) 2003-12-11 2006-02-08 주식회사 하이닉스반도체 반도체 메모리 소자의 데이터 전송 장치 및 그 제어 방법
US7148124B1 (en) * 2004-11-18 2006-12-12 Alexander Yuri Usenko Method for forming a fragile layer inside of a single crystalline substrate preferably for making silicon-on-insulator wafers
US7417949B2 (en) 2004-11-19 2008-08-26 Cisco Technology, Inc. Closed loop method and apparatus for throttling the transmit rate of an ethernet media access controller
US7245129B2 (en) 2005-02-14 2007-07-17 Texas Instruments Incorporated Apparatus for and method of cable diagnostics utilizing time domain reflectometry
JP2006294737A (ja) * 2005-04-07 2006-10-26 Sumco Corp Ｓｏｉ基板の製造方法及びその製造における剥離ウェーハの再生処理方法。
CN1866803B (zh) 2005-09-13 2012-05-30 华为技术有限公司 一种在以太网设备中解决时钟同步的方法
JP2007173354A (ja) * 2005-12-20 2007-07-05 Shin Etsu Chem Co Ltd Ｓｏｉ基板およびｓｏｉ基板の製造方法
KR101275796B1 (ko) 2006-07-25 2013-06-18 삼성전자주식회사 전송 라인 드라이버 및 이를 포함하는 직렬 인터페이스데이터 전송 장치
US7636317B2 (en) 2006-11-20 2009-12-22 Veriwave, Inc. Communications test system with multilevel scheduler
US8081625B2 (en) 2007-02-01 2011-12-20 Broadcom Corporation Method and system for utilizing a 10/100/1G/10G base-T PHY device for single channel and shared channel networks
CN100588273C (zh) 2007-09-11 2010-02-03 电子科技大学 用于网络线缆故障测试的方法及其装置
DE102007056115A1 (de) * 2007-11-15 2009-05-20 Freiberger Compound Materials Gmbh Verfahren zum Trennen von Einkristallen
US7820527B2 (en) 2008-02-20 2010-10-26 Varian Semiconductor Equipment Associates, Inc. Cleave initiation using varying ion implant dose
US7764554B2 (en) 2008-03-03 2010-07-27 Micron Technology, Inc. I/O circuit with phase mixer for slew rate control
TWI430338B (zh) * 2008-10-30 2014-03-11 Corning Inc 使用定向剝離作用製造絕緣體上半導體結構之方法及裝置
FR2944914B1 (fr) * 2009-04-22 2011-05-20 Commissariat Energie Atomique Procede de transfert d'au moins une couche micro-technologique
US9413551B2 (en) 2009-06-23 2016-08-09 Broadcom Corporation Method and system for network communications via a configurable multi-use Ethernet PHY
JP2011029609A (ja) * 2009-06-26 2011-02-10 Semiconductor Energy Lab Co Ltd Ｓｏｉ基板の作製方法およびｓｏｉ基板
JP5917036B2 (ja) * 2010-08-05 2016-05-11 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法
FR2965974B1 (fr) * 2010-10-12 2013-11-29 Soitec Silicon On Insulator Procédé de collage moléculaire de substrats en silicium et en verre
US9674317B2 (en) 2011-02-10 2017-06-06 Marvell World Trade Ltd. Multi-clock PHY preamble design and detection
US8935125B1 (en) 2011-02-25 2015-01-13 Smsc Holdings S.A.R.L. Internal cable calibration and compensation
EP2498398B1 (en) 2011-03-07 2019-10-30 Nxp B.V. Amplifier circuit and method
US9219560B2 (en) 2011-10-25 2015-12-22 Cavium, Inc. Multi-protocol SerDes PHY apparatus
FR2988474B1 (fr) 2012-03-21 2015-02-06 Commissariat Energie Atomique Systeme de mesure de la propagation d'une zone d'ecartement dans un substrat
WO2014001838A1 (en) 2012-06-27 2014-01-03 Freescale Semiconductor, Inc. Differential line driver circuit and method therefor
US8879586B2 (en) 2012-12-20 2014-11-04 Broadcom Corporation Inband timestamping
US9140639B2 (en) 2013-03-15 2015-09-22 Particles Plus, Inc. Pulse scope for particle counter
US9419598B2 (en) 2013-11-26 2016-08-16 Rambus Inc. In-situ delay element calibration
US9696361B1 (en) 2013-12-11 2017-07-04 Marvell International Ltd. Method and apparatus for analyzing features or characteristics of a cable in a network
FR3020175B1 (fr) * 2014-04-16 2016-05-13 Soitec Silicon On Insulator Procede de transfert d'une couche utile
US9628082B1 (en) 2014-07-01 2017-04-18 Xilinx, Inc. Strength-adjustable driver
US9467303B2 (en) 2014-09-26 2016-10-11 Linear Technology Corporation Controller area network bus transmitter with complementary source follower driver
JP6594732B2 (ja) 2015-01-20 2019-10-23 パナソニック インテレクチュアル プロパティ コーポレーション オブ アメリカ 不正フレーム対処方法、不正検知電子制御ユニット及び車載ネットワークシステム
US9860072B2 (en) 2015-05-12 2018-01-02 Linear Technology Corporation System with sleep and wake up control over DC path
US10447493B2 (en) 2016-07-26 2019-10-15 Honeywell International Inc. MAC and physical layer techniques for enabling communications on shared physical medium with multi-drop capability
US10372657B2 (en) 2016-12-26 2019-08-06 Intel Corporation Bimodal PHY for low latency in high speed interconnects
CN110582985B (zh) 2017-03-08 2023-04-11 罗伯特·博世有限公司 用于在控域网之上减轻对密钥协定方案的基于时序的攻击的方法
US10120406B1 (en) 2017-04-27 2018-11-06 Microchip Technology Incorporated Adaptive common mode dimmer
US10613607B2 (en) 2017-12-12 2020-04-07 Texas Instruments Incorporated Signal powered energy detect and wakeup system
US11272543B2 (en) 2018-02-21 2022-03-08 Nxp B.V. Physical layer device that connects to a shared media and method for operating a physical layer device that connects to a shared media
DE112020002209B4 (de) 2019-05-03 2023-01-12 Microchip Technology Incorporated Emulation von Kollisionen in drahtgebundenen lokalen Netzwerken und zugehörige Systeme, Verfahren und Vorrichtungen

Also Published As

Publication number Publication date
FR3055063A1 (fr) 2018-02-16
US20190221471A1 (en) 2019-07-18
EP3497713A1 (fr) 2019-06-19
CN109564891A (zh) 2019-04-02
FR3055063B1 (fr) 2018-08-31
TWI738834B (zh) 2021-09-11
TW201820428A (zh) 2018-06-01
US10950491B2 (en) 2021-03-16
US20210202302A1 (en) 2021-07-01
JP6977023B2 (ja) 2021-12-08
JP2019531594A (ja) 2019-10-31
KR102489395B1 (ko) 2023-01-18
CN109564891B (zh) 2023-08-29
KR20190037324A (ko) 2019-04-05
US11670540B2 (en) 2023-06-06
EP3497713B1 (fr) 2020-04-08
SG11201901108PA (en) 2019-03-28
WO2018029419A1 (fr) 2018-02-15

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