FR2944914B1 - Procede de transfert d'au moins une couche micro-technologique - Google Patents

Procede de transfert d'au moins une couche micro-technologique

Info

Publication number
FR2944914B1
FR2944914B1 FR0952621A FR0952621A FR2944914B1 FR 2944914 B1 FR2944914 B1 FR 2944914B1 FR 0952621 A FR0952621 A FR 0952621A FR 0952621 A FR0952621 A FR 0952621A FR 2944914 B1 FR2944914 B1 FR 2944914B1
Authority
FR
France
Prior art keywords
transferring
micro
technological layer
technological
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0952621A
Other languages
English (en)
Other versions
FR2944914A1 (fr
Inventor
Aurelie Tauzin
Anne Sophie Stragier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR0952621A priority Critical patent/FR2944914B1/fr
Priority to EP10725226.4A priority patent/EP2422365B1/fr
Publication of FR2944914A1 publication Critical patent/FR2944914A1/fr
Application granted granted Critical
Publication of FR2944914B1 publication Critical patent/FR2944914B1/fr
Priority to US13/271,401 priority patent/US8546238B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76259—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along a porous layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
FR0952621A 2009-04-22 2009-04-22 Procede de transfert d'au moins une couche micro-technologique Expired - Fee Related FR2944914B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR0952621A FR2944914B1 (fr) 2009-04-22 2009-04-22 Procede de transfert d'au moins une couche micro-technologique
EP10725226.4A EP2422365B1 (fr) 2009-04-22 2010-04-21 Procédé de transfert d'au moins une couche micro-technologique
US13/271,401 US8546238B2 (en) 2009-04-22 2011-10-12 Method for transferring at least one micro-technological layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0952621A FR2944914B1 (fr) 2009-04-22 2009-04-22 Procede de transfert d'au moins une couche micro-technologique

Publications (2)

Publication Number Publication Date
FR2944914A1 FR2944914A1 (fr) 2010-10-29
FR2944914B1 true FR2944914B1 (fr) 2011-05-20

Family

ID=41171055

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0952621A Expired - Fee Related FR2944914B1 (fr) 2009-04-22 2009-04-22 Procede de transfert d'au moins une couche micro-technologique

Country Status (1)

Country Link
FR (1) FR2944914B1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2977069B1 (fr) * 2011-06-23 2014-02-07 Soitec Silicon On Insulator Procede de fabrication d'une structure semi-conductrice mettant en oeuvre un collage temporaire
FR3055063B1 (fr) * 2016-08-11 2018-08-31 Soitec Procede de transfert d'une couche utile
CN113120857B (zh) * 2021-04-14 2024-07-02 中国科学院上海微系统与信息技术研究所 一种光学微纳结构的制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003046993A1 (fr) * 2001-11-29 2003-06-05 Shin-Etsu Handotai Co.,Ltd. Procede de production de plaquettes soi
DE10223719C1 (de) * 2002-05-28 2003-11-27 Infineon Technologies Ag Schicht-Anordnung und Verfahren zum Herstellen einer Schicht-Anordnung
FR2855909B1 (fr) * 2003-06-06 2005-08-26 Soitec Silicon On Insulator Procede d'obtention concomitante d'au moins une paire de structures comprenant au moins une couche utile reportee sur un substrat
US20050082526A1 (en) * 2003-10-15 2005-04-21 International Business Machines Corporation Techniques for layer transfer processing

Also Published As

Publication number Publication date
FR2944914A1 (fr) 2010-10-29

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Year of fee payment: 7

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Effective date: 20161230