SG10201906982SA - Tungsten chemical mechanical planarization (cmp) with low dishing and low erosion topography - Google Patents

Tungsten chemical mechanical planarization (cmp) with low dishing and low erosion topography

Info

Publication number
SG10201906982SA
SG10201906982SA SG10201906982SA SG10201906982SA SG10201906982SA SG 10201906982S A SG10201906982S A SG 10201906982SA SG 10201906982S A SG10201906982S A SG 10201906982SA SG 10201906982S A SG10201906982S A SG 10201906982SA SG 10201906982S A SG10201906982S A SG 10201906982SA
Authority
SG
Singapore
Prior art keywords
low
cmp
chemical mechanical
mechanical planarization
dishing
Prior art date
Application number
SG10201906982SA
Other languages
English (en)
Inventor
Stender Matthias
Derecskei Agnes
J Brennan Bradley
Original Assignee
Versum Materials Us Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Versum Materials Us Llc filed Critical Versum Materials Us Llc
Publication of SG10201906982SA publication Critical patent/SG10201906982SA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
SG10201906982SA 2018-07-31 2019-07-30 Tungsten chemical mechanical planarization (cmp) with low dishing and low erosion topography SG10201906982SA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862712901P 2018-07-31 2018-07-31
US201862771832P 2018-11-27 2018-11-27
US16/520,671 US11111435B2 (en) 2018-07-31 2019-07-24 Tungsten chemical mechanical planarization (CMP) with low dishing and low erosion topography

Publications (1)

Publication Number Publication Date
SG10201906982SA true SG10201906982SA (en) 2020-02-27

Family

ID=67539198

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201906982SA SG10201906982SA (en) 2018-07-31 2019-07-30 Tungsten chemical mechanical planarization (cmp) with low dishing and low erosion topography

Country Status (8)

Country Link
US (2) US11111435B2 (ja)
EP (1) EP3604468B1 (ja)
JP (2) JP7388842B2 (ja)
KR (1) KR102320657B1 (ja)
CN (1) CN110776829B (ja)
IL (1) IL268298B2 (ja)
SG (1) SG10201906982SA (ja)
TW (1) TWI742413B (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20190194493A1 (en) * 2017-08-03 2019-06-27 Jsr Corporation Composition for semiconductor treatment and treatment method
US11111435B2 (en) * 2018-07-31 2021-09-07 Versum Materials Us, Llc Tungsten chemical mechanical planarization (CMP) with low dishing and low erosion topography
US11198797B2 (en) * 2019-01-24 2021-12-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing compositions having stabilized abrasive particles for polishing dielectric substrates
KR20230067677A (ko) 2020-09-18 2023-05-16 씨엠씨 머티리얼즈 엘엘씨 탄소계 필름의 선택적 연마를 위한 실리카계 슬러리
WO2023102392A1 (en) * 2021-12-02 2023-06-08 Versum Materials Us, Llc Tungsten chemical mechanical polishing slurries

Family Cites Families (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4789648A (en) 1985-10-28 1988-12-06 International Business Machines Corporation Method for producing coplanar multi-level metal/insulator films on a substrate and for forming patterned conductive lines simultaneously with stud vias
US5230833A (en) 1989-06-09 1993-07-27 Nalco Chemical Company Low sodium, low metals silica polishing slurries
US5958288A (en) 1996-11-26 1999-09-28 Cabot Corporation Composition and slurry useful for metal CMP
US6083419A (en) * 1997-07-28 2000-07-04 Cabot Corporation Polishing composition including an inhibitor of tungsten etching
US6099604A (en) * 1997-08-21 2000-08-08 Micron Technology, Inc. Slurry with chelating agent for chemical-mechanical polishing of a semiconductor wafer and methods related thereto
US6177026B1 (en) 1998-05-26 2001-01-23 Cabot Microelectronics Corporation CMP slurry containing a solid catalyst
TWI227726B (en) * 1999-07-08 2005-02-11 Eternal Chemical Co Ltd Chemical-mechanical abrasive composition and method
US20020025762A1 (en) 2000-02-16 2002-02-28 Qiuliang Luo Biocides for polishing slurries
EP1211024A3 (en) 2000-11-30 2004-01-02 JSR Corporation Polishing method
JP2002249762A (ja) 2001-02-27 2002-09-06 Sanyo Chem Ind Ltd 研磨材用添加剤
US6572755B2 (en) * 2001-04-11 2003-06-03 Speedfam-Ipec Corporation Method and apparatus for electrochemically depositing a material onto a workpiece surface
TW591089B (en) 2001-08-09 2004-06-11 Cheil Ind Inc Slurry composition for use in chemical mechanical polishing of metal wiring
US20030162398A1 (en) 2002-02-11 2003-08-28 Small Robert J. Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same
US6773873B2 (en) * 2002-03-25 2004-08-10 Advanced Technology Materials, Inc. pH buffered compositions useful for cleaning residue from semiconductor substrates
US7491252B2 (en) 2002-03-25 2009-02-17 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Tantalum barrier removal solution
US7300480B2 (en) 2003-09-25 2007-11-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High-rate barrier polishing composition
US20090120012A1 (en) 2004-06-18 2009-05-14 Dongjin Semichem Co., Ltd. Method for preparing additive for chemical mechanical polishing slurry composition
JP4814502B2 (ja) * 2004-09-09 2011-11-16 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
US7988878B2 (en) * 2004-09-29 2011-08-02 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Selective barrier slurry for chemical mechanical polishing
JP5026665B2 (ja) * 2004-10-15 2012-09-12 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
US20070131899A1 (en) * 2005-12-13 2007-06-14 Jinru Bian Composition for polishing semiconductor layers
CN101490200B (zh) 2006-07-12 2012-09-05 卡伯特微电子公司 含有金属的基板的化学机械抛光方法
EP2125433A2 (en) 2007-03-15 2009-12-02 Johnson Controls Technology Company Overhead console
JP2008277723A (ja) 2007-03-30 2008-11-13 Fujifilm Corp 金属用研磨液及び研磨方法
US20080276543A1 (en) 2007-05-08 2008-11-13 Thomas Terence M Alkaline barrier polishing slurry
WO2009054370A1 (ja) * 2007-10-23 2009-04-30 Hitachi Chemical Company, Ltd. Ｃｍｐ研磨液及びこれを用いた基板の研磨方法
WO2009058274A1 (en) * 2007-10-29 2009-05-07 Ekc Technology, Inc. Chemical mechanical polishing and wafer cleaning composition comprising amidoxime compounds and associated method for use
WO2009096495A1 (ja) * 2008-02-01 2009-08-06 Fujimi Incorporated 研磨用組成物及びそれを用いた研磨方法
US20100193728A1 (en) 2008-08-05 2010-08-05 Song-Yuan Chang Chemical Mechanical Polishing Composition
US20100159807A1 (en) * 2008-12-22 2010-06-24 Jinru Bian Polymeric barrier removal polishing slurry
KR20110036294A (ko) 2009-10-01 2011-04-07 주식회사 동진쎄미켐 생촉매 페록시다아제를 포함하는 텅스텐 연마 조성물
US20110318928A1 (en) * 2010-06-24 2011-12-29 Jinru Bian Polymeric Barrier Removal Polishing Slurry
US9039796B2 (en) * 2010-11-22 2015-05-26 Hitachi Chemical Company, Ltd. Method for producing abrasive grains, method for producing slurry, and method for producing polishing liquid
JP6051632B2 (ja) 2011-07-20 2016-12-27 日立化成株式会社 研磨剤及び基板の研磨方法
CN103360953A (zh) * 2012-04-05 2013-10-23 安集微电子科技(上海)有限公司 一种化学机械抛光液
JP2014125628A (ja) 2012-12-27 2014-07-07 Sanyo Chem Ind Ltd 電子材料用研磨液
US20140315386A1 (en) 2013-04-19 2014-10-23 Air Products And Chemicals, Inc. Metal Compound Coated Colloidal Particles Process for Making and Use Therefor
US20160155130A1 (en) 2013-07-22 2016-06-02 Ertugrul KALE Global system for the administration of carbon balancing
US9303188B2 (en) 2014-03-11 2016-04-05 Cabot Microelectronics Corporation Composition for tungsten CMP
SG11201607700QA (en) * 2014-03-18 2016-10-28 Fujifilm Electronic Materials Etching composition
US9309442B2 (en) 2014-03-21 2016-04-12 Cabot Microelectronics Corporation Composition for tungsten buffing
CN106661430B (zh) 2014-06-25 2019-03-19 嘉柏微电子材料股份公司 钨化学机械抛光组合物
JP6482200B2 (ja) 2014-07-18 2019-03-13 株式会社フジミインコーポレーテッド 研磨用組成物
US10570313B2 (en) * 2015-02-12 2020-02-25 Versum Materials Us, Llc Dishing reducing in tungsten chemical mechanical polishing
US10160884B2 (en) 2015-03-23 2018-12-25 Versum Materials Us, Llc Metal compound chemically anchored colloidal particles and methods of production and use thereof
JP6561680B2 (ja) 2015-08-21 2019-08-21 日立化成株式会社 サファイア用研磨液、貯蔵液及び研磨方法
US20170090936A1 (en) 2015-09-25 2017-03-30 Qualcomm Incorporated Method and apparatus for dynamically tuning speculative optimizations based on instruction signature
US10066126B2 (en) * 2016-01-06 2018-09-04 Cabot Microelectronics Corporation Tungsten processing slurry with catalyst
KR20190036547A (ko) * 2016-09-29 2019-04-04 후지필름 가부시키가이샤 처리액, 및 적층체의 처리 방법
JP2018145263A (ja) 2017-03-02 2018-09-20 東京応化工業株式会社 硬化性組成物、硬化物、及び硬化物の製造方法
US11111435B2 (en) * 2018-07-31 2021-09-07 Versum Materials Us, Llc Tungsten chemical mechanical planarization (CMP) with low dishing and low erosion topography
JP7362662B2 (ja) * 2018-12-28 2023-10-17 富士フイルム株式会社 洗浄剤用キットおよび洗浄剤の調製方法

Also Published As

Publication number Publication date
JP2020050861A (ja) 2020-04-02
IL268298B1 (en) 2023-08-01
US20200040256A1 (en) 2020-02-06
US11884859B2 (en) 2024-01-30
IL268298B2 (en) 2023-12-01
CN110776829A (zh) 2020-02-11
KR20200014244A (ko) 2020-02-10
US11111435B2 (en) 2021-09-07
CN110776829B (zh) 2022-03-18
TWI742413B (zh) 2021-10-11
KR102320657B1 (ko) 2021-11-03
EP3604468B1 (en) 2021-08-25
JP2022060218A (ja) 2022-04-14
JP7388842B2 (ja) 2023-11-29
TW202007756A (zh) 2020-02-16
EP3604468A1 (en) 2020-02-05
US20210340445A1 (en) 2021-11-04
IL268298A (en) 2020-02-27

Similar Documents

Publication Publication Date Title
SG10201906982SA (en) Tungsten chemical mechanical planarization (cmp) with low dishing and low erosion topography
SG10201906659TA (en) Tungsten chemical mechanical polishing for reduced oxide erosion
IL244015B (en) Reduction of the chemical mechanical polishing composition containing tungsten
SG10201907380RA (en) Oxide chemical mechanical planarization (cmp) polishing compositions
EP3123498A4 (en) Mixed abrasive tungsten cmp composition
IL261370B (en) Metal chemical mechanical planarization (cmp) composition and methods therefore
IL252846B (en) A chemical mechanical polishing preparation of a substrate containing cobalt
EP3737723A4 (en) TOPOGRAPHIC ENHANCED TUNGSTEN ETOFFIC POLISHING COMPOSITIONS
EP3681964A4 (en) COMPOSITION FOR THE CHEMICAL-MECHANICAL POLISHING (CMP) OF TUNGSTEN
IL246004B (en) Chemical-mechanical planarization partition mixtures using ceria-coated silica mirco materials
EP3631046A4 (en) OXIDIZING LIQUID FOR CHEMICAL-MECHANICAL POLISHING OF CERAMIC MATERIALS
EP3099756A4 (en) A chemical mechanical polishing (cmp) composition comprising a poly(aminoacid)
EP3738140A4 (en) PROCESS FOR POLISHING LARGE QUANTITIES OF TUNGSTEN WITH IMPROVED TOPOGRAPHY
EP3230395A4 (en) Cmp compositons exhibiting reduced dishing in sti wafer polishing
TW201614036A (en) Polishing slurry composition
TW201612305A (en) Cleaning composition following CMP and methods related thereto
IL261161A (en) Chemical mechanical planarization preparation and methods therefor for copper applications and using silica
EP3347428A4 (en) SELECTIVE NITRIDE SUSPENSIONS HAVING ENHANCED STABILITY AND IMPROVED POLISHING FEATURES
IL267717A (en) Mechanical chemical polishing to create channels on a surface with a low oxide content
EP3495439A4 (en) MUD COMPOSITION FOR POLISHING A TUNGSTEN BARRIER LAYER
IL267714A (en) Chemical mechanical polishing of canals using low oxygen concentration
IL267715A (en) Chemical and mechanical polishing of a low oxide channel
IL262380A (en) Use of chemical mechanical polishing preparation for polishing substrates containing cobalt and/or cobalt alloy
IL291731A (en) Chemical mechanical planarization with the composition containing a little copper
ZA201703848B (en) Polycrystalline diamond sintered/rebonded on carbide substrate containing low tungsten