SG10201906659TA - Tungsten chemical mechanical polishing for reduced oxide erosion - Google Patents

Tungsten chemical mechanical polishing for reduced oxide erosion

Info

Publication number
SG10201906659TA
SG10201906659TA SG10201906659TA SG10201906659TA SG10201906659TA SG 10201906659T A SG10201906659T A SG 10201906659TA SG 10201906659T A SG10201906659T A SG 10201906659TA SG 10201906659T A SG10201906659T A SG 10201906659TA SG 10201906659T A SG10201906659T A SG 10201906659TA
Authority
SG
Singapore
Prior art keywords
mechanical polishing
chemical mechanical
reduced oxide
tungsten chemical
oxide erosion
Prior art date
Application number
SG10201906659TA
Inventor
Lu Chun
Shi Xiaobo
C Tamboli Dnyanesh
Mario Machado Reinaldo
Leonard O'neill Mark
Stender Matthias
Original Assignee
Versum Materials Us Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Versum Materials Us Llc filed Critical Versum Materials Us Llc
Publication of SG10201906659TA publication Critical patent/SG10201906659TA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation
SG10201906659TA 2018-07-20 2019-07-18 Tungsten chemical mechanical polishing for reduced oxide erosion SG10201906659TA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862700948P 2018-07-20 2018-07-20
US16/510,286 US11643599B2 (en) 2018-07-20 2019-07-12 Tungsten chemical mechanical polishing for reduced oxide erosion

Publications (1)

Publication Number Publication Date
SG10201906659TA true SG10201906659TA (en) 2020-02-27

Family

ID=67438340

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201906659TA SG10201906659TA (en) 2018-07-20 2019-07-18 Tungsten chemical mechanical polishing for reduced oxide erosion

Country Status (7)

Country Link
US (1) US11643599B2 (en)
EP (1) EP3597711A1 (en)
JP (1) JP6940557B2 (en)
KR (1) KR102320653B1 (en)
CN (1) CN110734703B (en)
SG (1) SG10201906659TA (en)
TW (1) TWI748208B (en)

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US11629271B2 (en) * 2020-08-03 2023-04-18 Cmc Materials, Inc. Titanium dioxide containing ruthenium chemical mechanical polishing slurry
KR20220049424A (en) * 2020-10-14 2022-04-21 삼성에스디아이 주식회사 Cmp slurry composition for polishing tungsten pattern wafer and method for polishing tungsten pattern wafer using the same
US11680186B2 (en) * 2020-11-06 2023-06-20 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of using same
KR20220088115A (en) * 2020-12-18 2022-06-27 주식회사 케이씨텍 Polishing slurry composition
CN112920716A (en) * 2021-01-26 2021-06-08 中国科学院上海微系统与信息技术研究所 Composition for titanium nitride chemical mechanical polishing and using method thereof
KR20220130543A (en) * 2021-03-18 2022-09-27 삼성에스디아이 주식회사 Cmp slurry composition for polishing tungsten pattern wafer and method for polishing tungsten pattern wafer using the same
KR20220135977A (en) * 2021-03-31 2022-10-07 삼성에스디아이 주식회사 Cmp slurry composition for polishing tungsten pattern wafer and method for polishing tungsten pattern wafer using the same
CN115197645B (en) * 2021-04-02 2024-02-20 Sk恩普士有限公司 Polishing composition for semiconductor process and method for manufacturing semiconductor device
KR20230146841A (en) * 2022-04-13 2023-10-20 에스케이엔펄스 주식회사 Composition for semiconduct process and manufacturing method of semiconduct device using the same
KR20230146842A (en) * 2022-04-13 2023-10-20 에스케이엔펄스 주식회사 Composition for semiconduct process and polishing method of semiconduct device using the same
CN115785819A (en) * 2022-11-11 2023-03-14 万华化学集团电子材料有限公司 Silicon wafer polishing composition and application thereof

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Also Published As

Publication number Publication date
KR102320653B1 (en) 2021-11-03
US11643599B2 (en) 2023-05-09
CN110734703A (en) 2020-01-31
US20200024515A1 (en) 2020-01-23
TW202007753A (en) 2020-02-16
KR20200010135A (en) 2020-01-30
CN110734703B (en) 2022-04-01
JP6940557B2 (en) 2021-09-29
TWI748208B (en) 2021-12-01
JP2020077840A (en) 2020-05-21
EP3597711A1 (en) 2020-01-22

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