SG10201905109VA - Non-volatile memory device and erasing method of the same - Google Patents
Non-volatile memory device and erasing method of the sameInfo
- Publication number
- SG10201905109VA SG10201905109VA SG10201905109VA SG10201905109VA SG10201905109VA SG 10201905109V A SG10201905109V A SG 10201905109VA SG 10201905109V A SG10201905109V A SG 10201905109VA SG 10201905109V A SG10201905109V A SG 10201905109VA SG 10201905109V A SG10201905109V A SG 10201905109VA
- Authority
- SG
- Singapore
- Prior art keywords
- same
- memory device
- volatile memory
- erasing method
- erasing
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
- G11C11/5635—Erasing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
- G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/24—Bit-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
- G11C16/3445—Circuits or methods to verify correct erasure of nonvolatile memory cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
- G11C16/3495—Circuits or methods to detect or delay wearout of nonvolatile EPROM or EEPROM memory devices, e.g. by counting numbers of erase or reprogram cycles, by using multiple memory areas serially or cyclically
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
- G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020180066091A KR102606826B1 (ko) | 2018-06-08 | 2018-06-08 | 비휘발성 메모리 장치 및 그 소거 방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG10201905109VA true SG10201905109VA (en) | 2020-01-30 |
Family
ID=66751920
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201905109VA SG10201905109VA (en) | 2018-06-08 | 2019-06-04 | Non-volatile memory device and erasing method of the same |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US10777278B2 (ko) |
| EP (1) | EP3579236B1 (ko) |
| KR (1) | KR102606826B1 (ko) |
| CN (1) | CN110580929A (ko) |
| SG (1) | SG10201905109VA (ko) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2020047321A (ja) * | 2018-09-14 | 2020-03-26 | キオクシア株式会社 | 半導体記憶装置 |
| US11114165B2 (en) * | 2019-09-03 | 2021-09-07 | Samsung Electronics Co., Ltd. | Semiconductor devices having increased efficiency in generation of gate-induced drain leakage current without insulation deterioration and methods of operating the same |
| JP2021093230A (ja) * | 2019-12-10 | 2021-06-17 | キオクシア株式会社 | 半導体記憶装置 |
| FR3109239B1 (fr) * | 2020-04-14 | 2022-04-22 | St Microelectronics Rousset | Procédé d’écriture dans une mémoire non-volatile suivant le vieillissement des cellules mémoires et circuit intégré correspondant. |
| KR20210147365A (ko) * | 2020-05-28 | 2021-12-07 | 에스케이하이닉스 주식회사 | 메모리 장치 및 이의 동작 방법 |
| KR20220015245A (ko) | 2020-07-30 | 2022-02-08 | 삼성전자주식회사 | 프로그래밍 동안 양방향 채널 프리차지를 수행하는 비휘발성 메모리 장치 |
| KR20220076986A (ko) | 2020-12-01 | 2022-06-08 | 에스케이하이닉스 주식회사 | 메모리 장치 및 그 동작 방법 |
| CN115668379A (zh) * | 2021-01-08 | 2023-01-31 | 长江存储科技有限责任公司 | 用于nand存储操作的架构和方法 |
| US11355198B1 (en) | 2021-01-19 | 2022-06-07 | Sandisk Technologies Llc | Smart erase scheme |
| CN112768454B (zh) * | 2021-01-21 | 2022-08-09 | 长江存储科技有限责任公司 | 三维存储器的擦除操作方法 |
| US11437110B1 (en) | 2021-03-25 | 2022-09-06 | Sandisk Technologies Llc | Erase tail comparator scheme |
| US20230195328A1 (en) * | 2021-12-22 | 2023-06-22 | Micron Technology, Inc. | Multi-stage erase operation of memory cells in a memory sub-system |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100704021B1 (ko) * | 2005-11-08 | 2007-04-04 | 삼성전자주식회사 | 신뢰성을 향상시키는 불휘발성 반도체 메모리 장치의데이터 소거방법 |
| KR101161393B1 (ko) * | 2006-05-15 | 2012-07-03 | 에스케이하이닉스 주식회사 | 플래쉬 메모리 장치의 소거 방법 |
| KR101226685B1 (ko) | 2007-11-08 | 2013-01-25 | 삼성전자주식회사 | 수직형 반도체 소자 및 그 제조 방법. |
| KR100936879B1 (ko) * | 2007-12-28 | 2010-01-14 | 주식회사 하이닉스반도체 | 불휘발성 메모리 장치의 소거 방법 및 소프트 프로그램방법 |
| US8488381B2 (en) | 2009-02-02 | 2013-07-16 | Samsung Electronics Co., Ltd. | Non-volatile memory device having vertical structure and method of operating the same |
| US9324440B2 (en) * | 2010-02-09 | 2016-04-26 | Samsung Electronics Co., Ltd. | Nonvolatile memory devices, operating methods thereof and memory systems including the same |
| KR101691092B1 (ko) | 2010-08-26 | 2016-12-30 | 삼성전자주식회사 | 불휘발성 메모리 장치, 그것의 동작 방법, 그리고 그것을 포함하는 메모리 시스템 |
| US8553466B2 (en) | 2010-03-04 | 2013-10-08 | Samsung Electronics Co., Ltd. | Non-volatile memory device, erasing method thereof, and memory system including the same |
| US9536970B2 (en) | 2010-03-26 | 2017-01-03 | Samsung Electronics Co., Ltd. | Three-dimensional semiconductor memory devices and methods of fabricating the same |
| KR101682666B1 (ko) | 2010-08-11 | 2016-12-07 | 삼성전자주식회사 | 비휘발성 메모리 장치, 그것의 채널 부스팅 방법, 그것의 프로그램 방법 및 그것을 포함하는 메모리 시스템 |
| JP2012119013A (ja) * | 2010-11-29 | 2012-06-21 | Toshiba Corp | 不揮発性半導体記憶装置 |
| KR20130005708A (ko) * | 2011-07-07 | 2013-01-16 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 및 그것의 동작 방법 |
| KR101842507B1 (ko) * | 2011-10-06 | 2018-03-28 | 삼성전자주식회사 | 불휘발성 메모리의 동작 방법 및 불휘발성 메모리를 제어하는 방법 |
| US8488382B1 (en) | 2011-12-21 | 2013-07-16 | Sandisk Technologies Inc. | Erase inhibit for 3D non-volatile memory |
| US8908435B2 (en) | 2011-12-21 | 2014-12-09 | Sandisk Technologies Inc. | Erase operation with controlled select gate voltage for 3D non-volatile memory |
| US8787094B2 (en) | 2012-04-18 | 2014-07-22 | Sandisk Technologies Inc. | Soft erase operation for 3D non-volatile memory with selective inhibiting of passed bits |
| US9019775B2 (en) * | 2012-04-18 | 2015-04-28 | Sandisk Technologies Inc. | Erase operation for 3D non-volatile memory with controllable gate-induced drain leakage current |
| KR20140020155A (ko) | 2012-08-08 | 2014-02-18 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 및 이의 동작 방법 |
| JP2014038670A (ja) | 2012-08-13 | 2014-02-27 | Toshiba Corp | 不揮発性半導体記憶装置 |
| KR102019843B1 (ko) * | 2012-12-03 | 2019-09-11 | 에스케이하이닉스 주식회사 | 전하 트랩 소자들을 소거하는 방법 |
| US8958249B2 (en) | 2013-03-04 | 2015-02-17 | Sandisk Technologies Inc. | Partitioned erase and erase verification in non-volatile memory |
| KR102083506B1 (ko) | 2013-05-10 | 2020-03-02 | 삼성전자주식회사 | 더미 워드 라인을 갖는 3차원 플래시 메모리 장치 및 그것을 포함하는 데이터 저장 장치 |
| US9171637B2 (en) * | 2013-08-27 | 2015-10-27 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device and method of controlling the same |
| US8891308B1 (en) | 2013-09-11 | 2014-11-18 | Sandisk Technologies Inc. | Dynamic erase voltage step size selection for 3D non-volatile memory |
| US9449698B1 (en) | 2015-10-20 | 2016-09-20 | Sandisk Technologies Llc | Block and zone erase algorithm for memory |
| US9711228B1 (en) * | 2016-05-27 | 2017-07-18 | Micron Technology, Inc. | Apparatus and methods of operating memory with erase de-bias |
| US10304551B2 (en) | 2016-06-27 | 2019-05-28 | Sandisk Technologies Llc | Erase speed based word line control |
-
2018
- 2018-06-08 KR KR1020180066091A patent/KR102606826B1/ko active IP Right Grant
-
2019
- 2019-05-02 US US16/401,877 patent/US10777278B2/en active Active
- 2019-05-30 CN CN201910461724.9A patent/CN110580929A/zh active Pending
- 2019-06-03 EP EP19177925.5A patent/EP3579236B1/en active Active
- 2019-06-04 SG SG10201905109VA patent/SG10201905109VA/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CN110580929A (zh) | 2019-12-17 |
| US10777278B2 (en) | 2020-09-15 |
| EP3579236A1 (en) | 2019-12-11 |
| KR20190139519A (ko) | 2019-12-18 |
| EP3579236B1 (en) | 2023-09-13 |
| US20190378574A1 (en) | 2019-12-12 |
| KR102606826B1 (ko) | 2023-11-27 |
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