SG10201804558XA - Uniform cmp polishing method - Google Patents

Uniform cmp polishing method

Info

Publication number
SG10201804558XA
SG10201804558XA SG10201804558XA SG10201804558XA SG10201804558XA SG 10201804558X A SG10201804558X A SG 10201804558XA SG 10201804558X A SG10201804558X A SG 10201804558XA SG 10201804558X A SG10201804558X A SG 10201804558XA SG 10201804558X A SG10201804558X A SG 10201804558XA
Authority
SG
Singapore
Prior art keywords
polishing
grooves
wafer
rotating
radial feeder
Prior art date
Application number
SG10201804558XA
Other languages
English (en)
Inventor
Vu Nguyen John
Quan Tran Tony
James Hendron Jeffrey
Robert Stack Jeffrey
Original Assignee
Rohm & Haas Elect Materials Cmp Holdings Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm & Haas Elect Materials Cmp Holdings Inc filed Critical Rohm & Haas Elect Materials Cmp Holdings Inc
Publication of SG10201804558XA publication Critical patent/SG10201804558XA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/0203—Making porous regions on the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
SG10201804558XA 2017-06-14 2018-05-30 Uniform cmp polishing method SG10201804558XA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201715623184A 2017-06-14 2017-06-14
US201715624979A 2017-06-16 2017-06-16
US15/725,836 US10586708B2 (en) 2017-06-14 2017-10-05 Uniform CMP polishing method

Publications (1)

Publication Number Publication Date
SG10201804558XA true SG10201804558XA (en) 2019-01-30

Family

ID=64457757

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201804558XA SG10201804558XA (en) 2017-06-14 2018-05-30 Uniform cmp polishing method

Country Status (8)

Country Link
US (1) US10586708B2 (zh)
JP (1) JP7148288B2 (zh)
KR (1) KR102660720B1 (zh)
CN (1) CN109079587B (zh)
DE (1) DE102018004634A1 (zh)
FR (1) FR3067626B1 (zh)
SG (1) SG10201804558XA (zh)
TW (1) TWI798222B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210116759A (ko) 2020-03-13 2021-09-28 삼성전자주식회사 Cmp 패드 및 이를 구비하는 화학적 기계적 연마 장치
CN111805412A (zh) * 2020-07-17 2020-10-23 中国科学院微电子研究所 一种抛光液施配器及抛光装置

Family Cites Families (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4037367A (en) 1975-12-22 1977-07-26 Kruse James A Grinding tool
US4450652A (en) 1981-09-04 1984-05-29 Monsanto Company Temperature control for wafer polishing
JPS60242975A (ja) 1984-05-14 1985-12-02 Kanebo Ltd 平面研磨装置
US5076024A (en) 1990-08-24 1991-12-31 Intelmatec Corporation Disk polisher assembly
US5212910A (en) 1991-07-09 1993-05-25 Intel Corporation Composite polishing pad for semiconductor process
US5527215A (en) 1992-01-10 1996-06-18 Schlegel Corporation Foam buffing pad having a finishing surface with a splash reducing configuration
US5243790A (en) 1992-06-25 1993-09-14 Abrasifs Vega, Inc. Abrasive member
MY114512A (en) 1992-08-19 2002-11-30 Rodel Inc Polymeric substrate with polymeric microelements
JPH0741539B2 (ja) * 1992-10-22 1995-05-10 日本軽金属株式会社 平面研磨装置及び該装置に使用する扇形固形砥石片
US6135856A (en) 1996-01-19 2000-10-24 Micron Technology, Inc. Apparatus and method for semiconductor planarization
US5778481A (en) 1996-02-15 1998-07-14 International Business Machines Corporation Silicon wafer cleaning and polishing pads
US5690540A (en) 1996-02-23 1997-11-25 Micron Technology, Inc. Spiral grooved polishing pad for chemical-mechanical planarization of semiconductor wafers
JP3812970B2 (ja) * 1996-06-20 2006-08-23 東京エレクトロン株式会社 研磨装置および研磨方法
US5888121A (en) 1997-09-23 1999-03-30 Lsi Logic Corporation Controlling groove dimensions for enhanced slurry flow
JP2000000755A (ja) 1998-06-16 2000-01-07 Sony Corp 研磨パッド及び研磨方法
GB2345255B (en) 1998-12-29 2000-12-27 United Microelectronics Corp Chemical-Mechanical Polishing Pad
CN1312742C (zh) 1999-03-30 2007-04-25 株式会社尼康 抛光垫、抛光机及制造半导体器件的方法
US6220942B1 (en) * 1999-04-02 2001-04-24 Applied Materials, Inc. CMP platen with patterned surface
JP2001071256A (ja) 1999-08-31 2001-03-21 Shinozaki Seisakusho:Kk 研磨パッドの溝形成方法及び装置並びに研磨パッド
JP2001121405A (ja) * 1999-10-25 2001-05-08 Matsushita Electric Ind Co Ltd 研磨パッド
DE60128768T2 (de) 2000-01-31 2007-10-11 Shin-Etsu Handotai Co., Ltd. Polierverfahren und vorrichtung
TW479000B (en) 2000-02-24 2002-03-11 United Microelectronics Corp Polish pad for polishing semiconductor wafer
US6749485B1 (en) 2000-05-27 2004-06-15 Rodel Holdings, Inc. Hydrolytically stable grooved polishing pads for chemical mechanical planarization
US6656019B1 (en) 2000-06-29 2003-12-02 International Business Machines Corporation Grooved polishing pads and methods of use
US8062098B2 (en) 2000-11-17 2011-11-22 Duescher Wayne O High speed flat lapping platen
JP4087581B2 (ja) * 2001-06-06 2008-05-21 株式会社荏原製作所 研磨装置
JP2003145402A (ja) 2001-11-09 2003-05-20 Nippon Electric Glass Co Ltd ガラス物品用研磨具
US7169014B2 (en) 2002-07-18 2007-01-30 Micron Technology, Inc. Apparatuses for controlling the temperature of polishing pads used in planarizing micro-device workpieces
US7377840B2 (en) 2004-07-21 2008-05-27 Neopad Technologies Corporation Methods for producing in-situ grooves in chemical mechanical planarization (CMP) pads, and novel CMP pad designs
US6783436B1 (en) 2003-04-29 2004-08-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad with optimized grooves and method of forming same
US6918824B2 (en) 2003-09-25 2005-07-19 Novellus Systems, Inc. Uniform fluid distribution and exhaust system for a chemical-mechanical planarization device
JP2005158797A (ja) 2003-11-20 2005-06-16 Renesas Technology Corp 半導体装置の製造方法
US6843711B1 (en) 2003-12-11 2005-01-18 Rohm And Haas Electronic Materials Cmp Holdings, Inc Chemical mechanical polishing pad having a process-dependent groove configuration
US6955587B2 (en) 2004-01-30 2005-10-18 Rohm And Haas Electronic Materials Cmp Holdings, Inc Grooved polishing pad and method
JP2005262341A (ja) 2004-03-16 2005-09-29 Noritake Super Abrasive:Kk Ｃｍｐパッドコンディショナー
US7329174B2 (en) 2004-05-20 2008-02-12 Jsr Corporation Method of manufacturing chemical mechanical polishing pad
JP2007081322A (ja) * 2005-09-16 2007-03-29 Jsr Corp 化学機械研磨パッドの製造方法
KR100568258B1 (ko) 2004-07-01 2006-04-07 삼성전자주식회사 화학적 기계적 연마용 연마 패드 및 이를 이용하는 화학적기계적 연마 장치
USD559066S1 (en) 2004-10-26 2008-01-08 Jsr Corporation Polishing pad
US7169029B2 (en) 2004-12-16 2007-01-30 3M Innovative Properties Company Resilient structured sanding article
JP3769581B1 (ja) 2005-05-18 2006-04-26 東洋ゴム工業株式会社 研磨パッドおよびその製造方法
KR101279819B1 (ko) 2005-04-12 2013-06-28 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드 방사-편향 연마 패드
KR100721196B1 (ko) * 2005-05-24 2007-05-23 주식회사 하이닉스반도체 연마패드 및 이를 이용한 화학적기계적연마장치
US7534162B2 (en) 2005-09-06 2009-05-19 Freescale Semiconductor, Inc. Grooved platen with channels or pathway to ambient air
TW200744786A (en) 2005-12-28 2007-12-16 Jsr Corp Chemical mechanical polishing pad and chemical mechanical polishing method
US20080220702A1 (en) * 2006-07-03 2008-09-11 Sang Fang Chemical Industry Co., Ltd. Polishing pad having surface texture
US7300340B1 (en) * 2006-08-30 2007-11-27 Rohm and Haas Electronics Materials CMP Holdings, Inc. CMP pad having overlaid constant area spiral grooves
JP4909706B2 (ja) 2006-10-24 2012-04-04 東洋ゴム工業株式会社 研磨パッド
US20090137187A1 (en) 2007-11-21 2009-05-28 Chien-Min Sung Diagnostic Methods During CMP Pad Dressing and Associated Systems
US9180570B2 (en) * 2008-03-14 2015-11-10 Nexplanar Corporation Grooved CMP pad
TWI360459B (en) 2008-04-11 2012-03-21 Bestac Advanced Material Co Ltd A polishing pad having groove structure for avoidi
KR20110100080A (ko) * 2010-03-03 2011-09-09 삼성전자주식회사 화학적 기계적 연마 공정용 연마 패드 및 이를 포함하는 화학적 기계적 연마 설비
KR101232787B1 (ko) 2010-08-18 2013-02-13 주식회사 엘지화학 연마 시스템용 연마 패드
US9211628B2 (en) 2011-01-26 2015-12-15 Nexplanar Corporation Polishing pad with concentric or approximately concentric polygon groove pattern
US8968058B2 (en) * 2011-05-05 2015-03-03 Nexplanar Corporation Polishing pad with alignment feature
TWI492818B (zh) 2011-07-12 2015-07-21 Iv Technologies Co Ltd 研磨墊、研磨方法以及研磨系統
US8920219B2 (en) * 2011-07-15 2014-12-30 Nexplanar Corporation Polishing pad with alignment aperture
WO2013039181A1 (ja) 2011-09-15 2013-03-21 東レ株式会社 研磨パッド
US9067298B2 (en) 2011-11-29 2015-06-30 Nexplanar Corporation Polishing pad with grooved foundation layer and polishing surface layer
US9649742B2 (en) 2013-01-22 2017-05-16 Nexplanar Corporation Polishing pad having polishing surface with continuous protrusions
US9415479B2 (en) 2013-02-08 2016-08-16 Taiwan Semiconductor Manufacturing Co., Ltd. Conductive chemical mechanical planarization polishing pad
TWM459065U (zh) 2013-04-29 2013-08-11 Iv Technologies Co Ltd 硏磨墊以及硏磨系統
TWM475334U (en) 2013-06-07 2014-04-01 Iv Technologies Co Ltd Polishing pad
TWI599447B (zh) 2013-10-18 2017-09-21 卡博特微電子公司 具有偏移同心溝槽圖樣之邊緣排除區的ｃｍｐ拋光墊
TWI549781B (zh) 2015-08-07 2016-09-21 智勝科技股份有限公司 研磨墊、研磨系統及研磨方法

Also Published As

Publication number Publication date
KR102660720B1 (ko) 2024-04-26
TWI798222B (zh) 2023-04-11
US20180366331A1 (en) 2018-12-20
FR3067626B1 (fr) 2021-12-10
TW201904722A (zh) 2019-02-01
JP2019022929A (ja) 2019-02-14
CN109079587A (zh) 2018-12-25
JP7148288B2 (ja) 2022-10-05
FR3067626A1 (fr) 2018-12-21
KR20180136372A (ko) 2018-12-24
DE102018004634A1 (de) 2018-12-20
US10586708B2 (en) 2020-03-10
CN109079587B (zh) 2021-05-14

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