SG10201804431UA - Semiconductor device including a gate insulation pattern and a gate electrode pattern - Google Patents
Semiconductor device including a gate insulation pattern and a gate electrode patternInfo
- Publication number
- SG10201804431UA SG10201804431UA SG10201804431UA SG10201804431UA SG10201804431UA SG 10201804431U A SG10201804431U A SG 10201804431UA SG 10201804431U A SG10201804431U A SG 10201804431UA SG 10201804431U A SG10201804431U A SG 10201804431UA SG 10201804431U A SG10201804431U A SG 10201804431UA
- Authority
- SG
- Singapore
- Prior art keywords
- pattern
- work function
- gate electrode
- gate
- electrode pattern
- Prior art date
Links
- 238000009413 insulation Methods 0.000 title abstract 4
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000002955 isolation Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/0886—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/48—Data lines or contacts therefor
- H10B12/488—Word lines
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/7851—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with the body tied to the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/34—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the transistor being at least partially in a trench in the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/36—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the transistor being a FinFET
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020170108885A KR102404645B1 (ko) | 2017-08-28 | 2017-08-28 | 반도체 장치 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201804431UA true SG10201804431UA (en) | 2019-03-28 |
Family
ID=65435550
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201804431UA SG10201804431UA (en) | 2017-08-28 | 2018-05-24 | Semiconductor device including a gate insulation pattern and a gate electrode pattern |
Country Status (4)
Country | Link |
---|---|
US (1) | US10811408B2 (zh) |
KR (1) | KR102404645B1 (zh) |
CN (1) | CN109427789B (zh) |
SG (1) | SG10201804431UA (zh) |
Families Citing this family (9)
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KR102505229B1 (ko) * | 2018-10-02 | 2023-03-06 | 삼성전자주식회사 | 반도체 소자 및 반도체 소자 제조 방법 |
US11081396B2 (en) * | 2019-09-12 | 2021-08-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method |
US11515311B2 (en) * | 2019-12-12 | 2022-11-29 | Micron Technology, Inc. | Semiconductor structure formation at differential depths |
JP2023518275A (ja) | 2020-08-06 | 2023-04-28 | チャンシン メモリー テクノロジーズ インコーポレイテッド | メモリ及びメモリの製造方法 |
US11424360B1 (en) * | 2021-02-04 | 2022-08-23 | Nanya Technology Corporation | Semiconductor device and method for manufacturing the same |
CN115172276B (zh) * | 2021-04-02 | 2024-05-24 | 长鑫存储技术有限公司 | 半导体结构及其形成方法 |
US11832432B2 (en) | 2021-12-16 | 2023-11-28 | Nanya Technology Corporation | Method of manufacturing memory device having word lines with reduced leakage |
TWI803217B (zh) * | 2021-12-16 | 2023-05-21 | 南亞科技股份有限公司 | 具有減少洩漏的字元線的記憶體元件 |
US20230345708A1 (en) * | 2022-04-26 | 2023-10-26 | Micron Technology, Inc. | Sense line and cell contact |
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JP4860022B2 (ja) | 2000-01-25 | 2012-01-25 | エルピーダメモリ株式会社 | 半導体集積回路装置の製造方法 |
US6709926B2 (en) | 2002-05-31 | 2004-03-23 | International Business Machines Corporation | High performance logic and high density embedded dram with borderless contact and antispacer |
DE10260770B4 (de) | 2002-12-23 | 2005-10-27 | Infineon Technologies Ag | DRAM-Speicher mit vertikal angeordneten Auswahltransistoren und Verfahren zur Herstellung |
US7060619B2 (en) | 2003-03-04 | 2006-06-13 | Infineon Technologies Ag | Reduction of the shear stress in copper via's in organic interlayer dielectric material |
US7294879B2 (en) | 2003-07-18 | 2007-11-13 | International Business Machines Corporation | Vertical MOSFET with dual work function materials |
US7241655B2 (en) | 2004-08-30 | 2007-07-10 | Micron Technology, Inc. | Method of fabricating a vertical wrap-around-gate field-effect-transistor for high density, low voltage logic and memory array |
US20070262395A1 (en) | 2006-05-11 | 2007-11-15 | Gibbons Jasper S | Memory cell access devices and methods of making the same |
KR101374323B1 (ko) | 2008-01-07 | 2014-03-17 | 삼성전자주식회사 | 반도체 소자 및 그 제조방법 |
KR101094373B1 (ko) | 2009-07-03 | 2011-12-15 | 주식회사 하이닉스반도체 | 랜딩플러그 전치 구조를 이용한 매립게이트 제조 방법 |
KR101675458B1 (ko) * | 2010-07-27 | 2016-11-14 | 삼성전자 주식회사 | 산 확산을 이용하는 반도체 소자의 제조 방법 |
US20130256802A1 (en) * | 2012-03-27 | 2013-10-03 | International Business Machines Corporation | Replacement Gate With Reduced Gate Leakage Current |
KR101853316B1 (ko) | 2012-03-29 | 2018-04-30 | 삼성전자주식회사 | 반도체 소자 |
KR101928559B1 (ko) * | 2012-07-17 | 2018-12-14 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법 |
KR102089682B1 (ko) * | 2013-07-15 | 2020-03-16 | 삼성전자 주식회사 | 반도체 장치 및 이의 제조 방법 |
KR102102782B1 (ko) | 2013-07-24 | 2020-04-22 | 에스케이하이닉스 주식회사 | 멀티 레이어 게이트를 갖는 반도체 장치, 이를 포함하는 전자 장치 및 그 반도체 장치의 제조 방법 |
KR102150252B1 (ko) | 2013-11-12 | 2020-09-02 | 삼성전자주식회사 | 반도체 장치 제조방법 |
KR102055333B1 (ko) | 2014-01-29 | 2020-01-22 | 에스케이하이닉스 주식회사 | 듀얼일함수 매립게이트형 트랜지스터 및 그 제조 방법, 그를 구비한 전자장치 |
KR20150090674A (ko) | 2014-01-29 | 2015-08-06 | 에스케이하이닉스 주식회사 | 듀얼일함수 매립게이트전극을 갖는 트랜지스터 및 그 제조 방법, 그를 구비한 전자장치 |
KR102162733B1 (ko) * | 2014-05-29 | 2020-10-07 | 에스케이하이닉스 주식회사 | 듀얼일함수 매립게이트형 트랜지스터 및 그 제조 방법, 그를 구비한 전자장치 |
JP2016046456A (ja) | 2014-08-26 | 2016-04-04 | マイクロン テクノロジー, インク. | 半導体装置 |
KR102250583B1 (ko) | 2014-12-16 | 2021-05-12 | 에스케이하이닉스 주식회사 | 듀얼일함수 게이트구조를 구비한 반도체장치 및 그 제조 방법, 그를 구비한 메모리셀, 그를 구비한 전자장치 |
KR102336033B1 (ko) | 2015-04-22 | 2021-12-08 | 에스케이하이닉스 주식회사 | 매립금속게이트구조를 구비한 반도체장치 및 그 제조 방법, 그를 구비한 메모리셀, 그를 구비한 전자장치 |
KR20160139814A (ko) * | 2015-05-28 | 2016-12-07 | 삼성전자주식회사 | 반도체 소자 및 그 제조방법 |
KR102396085B1 (ko) | 2015-10-28 | 2022-05-12 | 에스케이하이닉스 주식회사 | 매립금속게이트구조를 구비한 반도체장치 및 그 제조 방법, 그를 구비한 메모리셀, 그를 구비한 전자장치 |
KR102410919B1 (ko) | 2015-10-29 | 2022-06-21 | 에스케이하이닉스 주식회사 | 매립게이트구조를 구비한 반도체구조물 및 그 제조 방법, 그를 구비한 메모리셀 |
KR102432719B1 (ko) * | 2015-12-23 | 2022-08-17 | 에스케이하이닉스 주식회사 | 매립금속게이트구조를 구비한 반도체장치 및 그 제조 방법, 그를 구비한 메모리셀, 그를 구비한 전자장치 |
KR102455869B1 (ko) | 2015-12-23 | 2022-10-20 | 에스케이하이닉스 주식회사 | 매립게이트구조를 구비한 반도체장치 및 그 제조 방법, 그를 구비한 메모리셀 |
US10068904B2 (en) * | 2016-02-05 | 2018-09-04 | Samsung Electronics Co., Ltd. | Semiconductor device |
KR102511942B1 (ko) * | 2016-12-16 | 2023-03-23 | 에스케이하이닉스 주식회사 | 매립게이트구조를 구비한 반도체장치 및 그 제조 방법 |
-
2017
- 2017-08-28 KR KR1020170108885A patent/KR102404645B1/ko active IP Right Grant
-
2018
- 2018-04-13 US US15/952,798 patent/US10811408B2/en active Active
- 2018-05-24 SG SG10201804431UA patent/SG10201804431UA/en unknown
- 2018-08-21 CN CN201810957390.XA patent/CN109427789B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
KR20190025098A (ko) | 2019-03-11 |
CN109427789A (zh) | 2019-03-05 |
US10811408B2 (en) | 2020-10-20 |
KR102404645B1 (ko) | 2022-06-03 |
CN109427789B (zh) | 2024-03-15 |
US20190067278A1 (en) | 2019-02-28 |
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