SG10201805946SA - Semiconductor package - Google Patents

Semiconductor package

Info

Publication number
SG10201805946SA
SG10201805946SA SG10201805946SA SG10201805946SA SG10201805946SA SG 10201805946S A SG10201805946S A SG 10201805946SA SG 10201805946S A SG10201805946S A SG 10201805946SA SG 10201805946S A SG10201805946S A SG 10201805946SA SG 10201805946S A SG10201805946S A SG 10201805946SA
Authority
SG
Singapore
Prior art keywords
substrate
semiconductor package
mold layer
semiconductor chip
alignment protrusion
Prior art date
Application number
SG10201805946SA
Inventor
Kim Sunchul
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of SG10201805946SA publication Critical patent/SG10201805946SA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/073—Apertured devices mounted on one or more rods passed through the apertures
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
    • H—ELECTRICITY
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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    • H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/105—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L27/00
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    • H01L2224/161—Disposition
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    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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    • H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
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    • H01L2225/1023—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement the lowermost container comprising a device support the support being an insulating substrate
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    • H01L23/00—Details of semiconductor or other solid state devices
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838—Geometry or layout
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape
    • H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
    • H01L2924/18161—Exposing the passive side of the semiconductor or solid-state body of a flip chip

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Coupling Device And Connection With Printed Circuit (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

A semiconductor package includes a first semiconductor chip on a first substrate, a first mold layer provided on the first substrate to cover a side surface of the first semiconductor chip, a solder structure provided on the first substrate, and a second substrate provided 5 on the solder structure. A guide receptacle is formed at one of a top surface of the first mold layer and a bottom surface of the second substrate, a first alignment protrusion is formed at the other of the top surface of the first mold layer and the bottom surface of the second substrate, and at least a portion of the first alignment protrusion is provided in the guide receptacle. 10 FIG. 1
SG10201805946SA 2017-09-29 2018-07-11 Semiconductor package SG10201805946SA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020170127034A KR102427557B1 (en) 2017-09-29 2017-09-29 Semiconductor package

Publications (1)

Publication Number Publication Date
SG10201805946SA true SG10201805946SA (en) 2019-04-29

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201805946SA SG10201805946SA (en) 2017-09-29 2018-07-11 Semiconductor package

Country Status (4)

Country Link
US (1) US10475749B2 (en)
KR (1) KR102427557B1 (en)
CN (1) CN109585390B (en)
SG (1) SG10201805946SA (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10622340B2 (en) * 2016-11-21 2020-04-14 Samsung Electronics Co., Ltd. Semiconductor package
US10757800B1 (en) 2017-06-22 2020-08-25 Flex Ltd. Stripline transmission lines with cross-hatched pattern return plane, where the striplines do not overlap any intersections in the cross-hatched pattern
KR102448248B1 (en) * 2018-05-24 2022-09-27 삼성전자주식회사 Package-on-package type semiconductor package and method for fabricating the same
KR102497572B1 (en) * 2018-07-03 2023-02-09 삼성전자주식회사 Semiconductor package and method of forming the same
US11224117B1 (en) 2018-07-05 2022-01-11 Flex Ltd. Heat transfer in the printed circuit board of an SMPS by an integrated heat exchanger
US10964660B1 (en) 2018-11-20 2021-03-30 Flex Ltd. Use of adhesive films for 3D pick and place assembly of electronic components
JP7163162B2 (en) * 2018-12-10 2022-10-31 新光電気工業株式会社 semiconductor package
US10896877B1 (en) * 2018-12-14 2021-01-19 Flex Ltd. System in package with double side mounted board
KR20210126228A (en) 2020-04-10 2021-10-20 삼성전자주식회사 Semiconductor package
KR20220048532A (en) * 2020-10-12 2022-04-20 삼성전자주식회사 Semiconductor package and manufacturing method thereof
KR20220049975A (en) * 2020-10-15 2022-04-22 삼성전자주식회사 Semiconductor package
KR20230015402A (en) * 2021-01-26 2023-01-31 양쯔 메모리 테크놀로지스 씨오., 엘티디. Substrate structure, manufacturing and packaging method thereof
CN113506749B (en) * 2021-09-08 2021-11-12 南通汇丰电子科技有限公司 Chip stacking body and preparation method thereof
KR20230056188A (en) * 2021-10-20 2023-04-27 삼성전자주식회사 Semiconductor package

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1122567A1 (en) * 2000-02-02 2001-08-08 Corning Incorporated Passive alignement using slanted wall pedestal
KR20050006547A (en) 2003-07-09 2005-01-17 앰코 테크놀로지 코리아 주식회사 PCB for fabricating semiconductor package and semiconductor package using the same
SG157362A1 (en) 2004-11-04 2009-12-29 Microchips Inc Compression and cold weld sealing methods and devices
US7378734B2 (en) 2006-05-30 2008-05-27 Touchdown Technologies, Inc. Stacked contact bump
KR20070062087A (en) 2005-12-12 2007-06-15 삼성전자주식회사 Multi stack package
DE102007027435A1 (en) * 2007-06-14 2008-12-18 X-Fab Semiconductor Foundries Ag Method and device for structured layer deposition on processed microsystem technology wafers
KR20090030540A (en) * 2007-09-20 2009-03-25 삼성전자주식회사 Semiconductor package, apparatus and method for manufacturing the same, and electronic device equipped with the semiconductor package
US7777351B1 (en) 2007-10-01 2010-08-17 Amkor Technology, Inc. Thin stacked interposer package
US9136259B2 (en) * 2008-04-11 2015-09-15 Micron Technology, Inc. Method of creating alignment/centering guides for small diameter, high density through-wafer via die stacking
US20100072600A1 (en) * 2008-09-22 2010-03-25 Texas Instrument Incorporated Fine-pitch oblong solder connections for stacking multi-chip packages
US8115319B2 (en) * 2010-03-04 2012-02-14 Powertech Technology Inc. Flip chip package maintaining alignment during soldering
KR20110139367A (en) 2010-06-23 2011-12-29 앰코 테크놀로지 코리아 주식회사 Semiconductor package for preventing misalignment
KR20120048841A (en) 2010-11-08 2012-05-16 에스케이하이닉스 주식회사 Stacked semiconductor package
KR101817159B1 (en) 2011-02-17 2018-02-22 삼성전자 주식회사 Semiconductor package having TSV interposer and method of manufacturing the same
KR101852601B1 (en) 2011-05-31 2018-04-27 삼성전자주식회사 Semiconductor package apparatus
US9209163B2 (en) 2011-08-19 2015-12-08 Marvell World Trade Ltd. Package-on-package structures
KR20130123722A (en) 2012-05-03 2013-11-13 에스케이하이닉스 주식회사 Semiconductor chip and stacked semiconductor package having the same
US8970024B2 (en) 2013-03-14 2015-03-03 Taiwan Semiconductor Manufacturing Company, Ltd. Packages with molding material forming steps
KR102134133B1 (en) * 2013-09-23 2020-07-16 삼성전자주식회사 A semiconductor package and method of fabricating the same
KR102157551B1 (en) * 2013-11-08 2020-09-18 삼성전자주식회사 A semiconductor package and method of fabricating the same
KR20150091886A (en) 2014-02-04 2015-08-12 삼성전자주식회사 Semiconductor package having a heat slug
KR102198858B1 (en) * 2014-07-24 2021-01-05 삼성전자 주식회사 Semiconductor package stack structure having interposer substrate
KR102367404B1 (en) 2015-08-03 2022-02-25 삼성전자주식회사 Method of manufacturing semiconductor package
US9947642B2 (en) * 2015-10-02 2018-04-17 Qualcomm Incorporated Package-on-Package (PoP) device comprising a gap controller between integrated circuit (IC) packages
US10622340B2 (en) 2016-11-21 2020-04-14 Samsung Electronics Co., Ltd. Semiconductor package

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