SG10201802539SA - Workpiece processing method - Google Patents

Workpiece processing method

Info

Publication number
SG10201802539SA
SG10201802539SA SG10201802539SA SG10201802539SA SG10201802539SA SG 10201802539S A SG10201802539S A SG 10201802539SA SG 10201802539S A SG10201802539S A SG 10201802539SA SG 10201802539S A SG10201802539S A SG 10201802539SA SG 10201802539S A SG10201802539S A SG 10201802539SA
Authority
SG
Singapore
Prior art keywords
workpiece
cutting
processing method
division line
holding
Prior art date
Application number
SG10201802539SA
Other languages
English (en)
Inventor
Takenouchi Kenji
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of SG10201802539SA publication Critical patent/SG10201802539SA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
    • B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Optics & Photonics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
SG10201802539SA 2017-04-04 2018-03-27 Workpiece processing method SG10201802539SA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017074248A JP2018181901A (ja) 2017-04-04 2017-04-04 加工方法

Publications (1)

Publication Number Publication Date
SG10201802539SA true SG10201802539SA (en) 2018-11-29

Family

ID=63525711

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201802539SA SG10201802539SA (en) 2017-04-04 2018-03-27 Workpiece processing method

Country Status (7)

Country Link
US (1) US10468302B2 (de)
JP (1) JP2018181901A (de)
KR (1) KR20180112695A (de)
CN (1) CN108711551A (de)
DE (1) DE102018205030A1 (de)
SG (1) SG10201802539SA (de)
TW (1) TW201903854A (de)

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6349926A (ja) 1986-08-20 1988-03-02 Nec Corp 複数ソ−ト処理の並行実行方式
JPH06349926A (ja) 1993-06-12 1994-12-22 Hitachi Ltd 半導体装置
JPH0955573A (ja) 1995-08-10 1997-02-25 Disco Abrasive Syst Ltd 樹脂基板の切削方法
US6310017B1 (en) 1999-02-01 2001-10-30 Ct Associates, Inc. Cleaner composition, method for making and using same
JP3440888B2 (ja) 1999-06-21 2003-08-25 株式会社村田製作所 ダイシングブレード及び電子部品の製造方法
US6280298B1 (en) 1999-11-24 2001-08-28 Intel Corporation Test probe cleaning
US6596562B1 (en) 2002-01-03 2003-07-22 Intel Corporation Semiconductor wafer singulation method
US6791197B1 (en) * 2002-08-26 2004-09-14 Integrated Device Technology, Inc. Reducing layer separation and cracking in semiconductor devices
US7855130B2 (en) 2003-04-21 2010-12-21 International Business Machines Corporation Corrosion inhibitor additives to prevent semiconductor device bond-pad corrosion during wafer dicing operations
US7087452B2 (en) 2003-04-22 2006-08-08 Intel Corporation Edge arrangements for integrated circuit chips
JP4231349B2 (ja) 2003-07-02 2009-02-25 株式会社ディスコ レーザー加工方法およびレーザー加工装置
JP2006140341A (ja) 2004-11-12 2006-06-01 Disco Abrasive Syst Ltd ウエーハの分割方法
JP4751634B2 (ja) 2005-03-31 2011-08-17 富士通セミコンダクター株式会社 半導体装置の製造方法
US20080191318A1 (en) 2007-02-09 2008-08-14 Advanced Micro Devices, Inc. Semiconductor device and method of sawing semiconductor device
US8629532B2 (en) 2007-05-08 2014-01-14 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor wafer with assisting dicing structure and dicing method thereof
JP5419596B2 (ja) 2009-09-02 2014-02-19 兼房株式会社 回転工具のための流体供給機構
JP5480923B2 (ja) 2011-05-13 2014-04-23 シャープ株式会社 半導体モジュールの製造方法及び半導体モジュール
JP2013161998A (ja) 2012-02-07 2013-08-19 Disco Abrasive Syst Ltd 切削方法
US8952413B2 (en) 2012-03-08 2015-02-10 Micron Technology, Inc. Etched trenches in bond materials for die singulation, and associated systems and methods
JP5996260B2 (ja) * 2012-05-09 2016-09-21 株式会社ディスコ 被加工物の分割方法
US8859397B2 (en) 2012-07-13 2014-10-14 Applied Materials, Inc. Method of coating water soluble mask for laser scribing and plasma etch
US9085049B2 (en) 2012-11-30 2015-07-21 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for manufacturing semiconductor device
JP6274926B2 (ja) * 2014-03-17 2018-02-07 株式会社ディスコ 切削方法
US9275902B2 (en) 2014-03-26 2016-03-01 Applied Materials, Inc. Dicing processes for thin wafers with bumps on wafer backside
US9460963B2 (en) 2014-03-26 2016-10-04 Globalfoundries Inc. Self-aligned contacts and methods of fabrication
JP2015207604A (ja) * 2014-04-17 2015-11-19 株式会社ディスコ ウェーハの加工方法
US9130057B1 (en) 2014-06-30 2015-09-08 Applied Materials, Inc. Hybrid dicing process using a blade and laser
US9936364B2 (en) * 2014-07-03 2018-04-03 Cisco Technology, Inc. Mobile device wireless identifier assignment for emergency calls
JP6426407B2 (ja) * 2014-09-03 2018-11-21 株式会社ディスコ ウエーハの加工方法
KR102457313B1 (ko) 2014-09-29 2022-10-20 린텍 가부시키가이샤 반도체 웨이퍼 가공용 시트용 기재, 반도체 웨이퍼 가공용 시트 및 반도체 장치의 제조 방법
WO2016103902A1 (ja) * 2014-12-25 2016-06-30 デンカ株式会社 レーザーダイシング用粘着シートおよび半導体装置の製造方法
JP2017017098A (ja) * 2015-06-29 2017-01-19 株式会社ディスコ ウェーハの加工方法
US10535554B2 (en) 2016-12-14 2020-01-14 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor die having edge with multiple gradients and method for forming the same

Also Published As

Publication number Publication date
JP2018181901A (ja) 2018-11-15
CN108711551A (zh) 2018-10-26
US20180286756A1 (en) 2018-10-04
US10468302B2 (en) 2019-11-05
DE102018205030A1 (de) 2018-10-04
TW201903854A (zh) 2019-01-16
KR20180112695A (ko) 2018-10-12

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