SG10201802545TA - Method of processing workpiece - Google Patents

Method of processing workpiece

Info

Publication number
SG10201802545TA
SG10201802545TA SG10201802545TA SG10201802545TA SG10201802545TA SG 10201802545T A SG10201802545T A SG 10201802545TA SG 10201802545T A SG10201802545T A SG 10201802545TA SG 10201802545T A SG10201802545T A SG 10201802545TA SG 10201802545T A SG10201802545T A SG 10201802545TA
Authority
SG
Singapore
Prior art keywords
workpiece
laser
cutting
processed grooves
dicing lines
Prior art date
Application number
SG10201802545TA
Inventor
Takenouchi Kenji
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of SG10201802545TA publication Critical patent/SG10201802545TA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B26—HAND CUTTING TOOLS; CUTTING; SEVERING
    • B26D—CUTTING; DETAILS COMMON TO MACHINES FOR PERFORATING, PUNCHING, CUTTING-OUT, STAMPING-OUT OR SEVERING
    • B26D3/00—Cutting work characterised by the nature of the cut made; Apparatus therefor
    • B26D3/06—Grooving involving removal of material from the surface of the work
    • B26D3/065—On sheet material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/32—Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Forests & Forestry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

METHOD OF PROCESSING WORKPIECE A method of processing a plate-shaped workpiece that includes on a face side thereof layered bodies containing metal which are formed in superposed relation to projected dicing lines includes the steps of holding a face side of the workpiece on a holding table, thereafter, applying a laser beam having a wavelength that is absorbable by the workpiece to a reverse side thereof along the projected dicing lines to form laser-processed grooves in the workpiece which terminate short of the layered bodies, and thereafter, cutting bottoms of the laser-processed grooves with a cutting blade to sever the workpiece together with the layered bodies along the projected dicing lines. The step of cutting bottoms of the laser-processed grooves includes the step of cutting bottoms of the laser-processed grooves while supplying a cutting fluid containing an organic acid and an oxidizing agent to the workpiece. (Figure 5)
SG10201802545TA 2017-04-04 2018-03-27 Method of processing workpiece SG10201802545TA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017074465A JP6824582B2 (en) 2017-04-04 2017-04-04 Processing method

Publications (1)

Publication Number Publication Date
SG10201802545TA true SG10201802545TA (en) 2018-11-29

Family

ID=63525295

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201802545TA SG10201802545TA (en) 2017-04-04 2018-03-27 Method of processing workpiece

Country Status (7)

Country Link
US (1) US10424511B2 (en)
JP (1) JP6824582B2 (en)
KR (1) KR102422912B1 (en)
CN (1) CN108695145B (en)
DE (1) DE102018205025A1 (en)
SG (1) SG10201802545TA (en)
TW (1) TWI741160B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110076460B (en) * 2019-05-28 2020-09-18 中国科学院宁波材料技术与工程研究所 Space multi-beam controllable coupling laser processing device and method
WO2024091582A1 (en) * 2022-10-28 2024-05-02 Applied Materials, Inc. Slitting method and hardware for coated flexible substrates

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6349926A (en) 1986-08-20 1988-03-02 Nec Corp Parallel execution system for plural sort processing
JPH06349926A (en) 1993-06-12 1994-12-22 Hitachi Ltd Semiconductor device
JPH0955573A (en) 1995-08-10 1997-02-25 Disco Abrasive Syst Ltd Cutting method for resin board
US6310017B1 (en) 1999-02-01 2001-10-30 Ct Associates, Inc. Cleaner composition, method for making and using same
JP3440888B2 (en) 1999-06-21 2003-08-25 株式会社村田製作所 Dicing blade and method for manufacturing electronic component
US6280298B1 (en) 1999-11-24 2001-08-28 Intel Corporation Test probe cleaning
JP2002231658A (en) * 2001-01-30 2002-08-16 Takemoto Denki Seisakusho:Kk Method for cutting semiconductor wafer
US6596562B1 (en) 2002-01-03 2003-07-22 Intel Corporation Semiconductor wafer singulation method
US6791197B1 (en) 2002-08-26 2004-09-14 Integrated Device Technology, Inc. Reducing layer separation and cracking in semiconductor devices
US7855130B2 (en) 2003-04-21 2010-12-21 International Business Machines Corporation Corrosion inhibitor additives to prevent semiconductor device bond-pad corrosion during wafer dicing operations
US7087452B2 (en) 2003-04-22 2006-08-08 Intel Corporation Edge arrangements for integrated circuit chips
JP4231349B2 (en) 2003-07-02 2009-02-25 株式会社ディスコ Laser processing method and laser processing apparatus
JP2005142399A (en) * 2003-11-07 2005-06-02 Tokyo Seimitsu Co Ltd Dicing method
JP4751634B2 (en) * 2005-03-31 2011-08-17 富士通セミコンダクター株式会社 Manufacturing method of semiconductor device
US20080191318A1 (en) 2007-02-09 2008-08-14 Advanced Micro Devices, Inc. Semiconductor device and method of sawing semiconductor device
US8629532B2 (en) 2007-05-08 2014-01-14 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor wafer with assisting dicing structure and dicing method thereof
JP5122378B2 (en) * 2008-06-09 2013-01-16 株式会社ディスコ How to divide a plate
JP5419596B2 (en) 2009-09-02 2014-02-19 兼房株式会社 Fluid supply mechanism for rotating tools
JP5981094B2 (en) * 2010-06-24 2016-08-31 東芝機械株式会社 Dicing method
JP5480923B2 (en) * 2011-05-13 2014-04-23 シャープ株式会社 Semiconductor module manufacturing method and semiconductor module
JP2013008823A (en) * 2011-06-24 2013-01-10 Disco Abrasive Syst Ltd Cutting device
JP2013069814A (en) * 2011-09-21 2013-04-18 Renesas Electronics Corp Method for manufacturing semiconductor device
JP2013161998A (en) 2012-02-07 2013-08-19 Disco Abrasive Syst Ltd Cutting method
US8952413B2 (en) 2012-03-08 2015-02-10 Micron Technology, Inc. Etched trenches in bond materials for die singulation, and associated systems and methods
US8859397B2 (en) 2012-07-13 2014-10-14 Applied Materials, Inc. Method of coating water soluble mask for laser scribing and plasma etch
US9085049B2 (en) 2012-11-30 2015-07-21 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for manufacturing semiconductor device
JP6274926B2 (en) * 2014-03-17 2018-02-07 株式会社ディスコ Cutting method
JP6504750B2 (en) * 2014-05-07 2019-04-24 株式会社ディスコ Wafer processing method
US9130057B1 (en) 2014-06-30 2015-09-08 Applied Materials, Inc. Hybrid dicing process using a blade and laser
JP6426407B2 (en) * 2014-09-03 2018-11-21 株式会社ディスコ Wafer processing method
WO2016052444A1 (en) 2014-09-29 2016-04-07 リンテック株式会社 Base for sheets for semiconductor wafer processing, sheet for semiconductor wafer processing, and method for manufacturing semiconductor device
JP6407066B2 (en) * 2015-03-06 2018-10-17 株式会社ディスコ Manufacturing method of optical device chip
JP6478801B2 (en) * 2015-05-19 2019-03-06 株式会社ディスコ Wafer processing method
US10535554B2 (en) * 2016-12-14 2020-01-14 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor die having edge with multiple gradients and method for forming the same

Also Published As

Publication number Publication date
CN108695145A (en) 2018-10-23
TWI741160B (en) 2021-10-01
JP6824582B2 (en) 2021-02-03
KR20180112690A (en) 2018-10-12
DE102018205025A1 (en) 2018-10-04
CN108695145B (en) 2024-02-20
KR102422912B1 (en) 2022-07-21
US10424511B2 (en) 2019-09-24
US20180286755A1 (en) 2018-10-04
JP2018181905A (en) 2018-11-15
TW201838008A (en) 2018-10-16

Similar Documents

Publication Publication Date Title
SG10201802546UA (en) Method of processing workpiece
MY185736A (en) Dividing method of workpiece and laser processing apparatus
TW201613707A (en) Machine tool and control device for machine tool
MY185737A (en) Laser processing apparatus
EP1777031A4 (en) Laser processing method
MX2018003516A (en) Method for cutting using press die.
SG10201708553PA (en) Method of processing wafer
MY198103A (en) Wafer processing method
TW200714399A (en) Synthetic pulse repetition rate processing for dual-headed laser micromachining systems
WO2009007708A3 (en) Laser cutting
SG10201802545TA (en) Method of processing workpiece
SG10201802542RA (en) Workpiece processing method
SG10201802543SA (en) Method of processing workpiece
PH12018500560A1 (en) Cutting method for fiber reinforced composite material
SG10201902671UA (en) Wafer processing method
WO2015010680A3 (en) Device for treating or machining a surface
SG10201807751QA (en) Wafer processing method
SG10201800068TA (en) Method of processing workpiece
SG10201802544PA (en) Method of processing workpiece
MY186298A (en) Method of cutting workpiece
WO2018013901A3 (en) Material processing utilizing a laser having a variable beam shape
EP3685956A4 (en) Method for processing workpiece with laser, and use thereof in cutter manufacturing
SG10201708957PA (en) Device chip package manufacturing method
SG10201900105UA (en) Method of processing workpiece with laser beam
SG10201803307SA (en) Method of processing workpiece