SG10201803307SA - Method of processing workpiece - Google Patents

Method of processing workpiece

Info

Publication number
SG10201803307SA
SG10201803307SA SG10201803307SA SG10201803307SA SG10201803307SA SG 10201803307S A SG10201803307S A SG 10201803307SA SG 10201803307S A SG10201803307S A SG 10201803307SA SG 10201803307S A SG10201803307S A SG 10201803307SA SG 10201803307S A SG10201803307S A SG 10201803307SA
Authority
SG
Singapore
Prior art keywords
cutting blade
metal
workpiece
removing step
burr removing
Prior art date
Application number
SG10201803307SA
Inventor
Takenouchi Kenji
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of SG10201803307SA publication Critical patent/SG10201803307SA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

Abstract

METHOD OF PROCESSING WORKPIECE A method of processing a workpiece with a cutting blade, the workpiece having a body of metal disposed in superposed relation to projected dicing lines, including: a first metal burr removing step of moving the cutting blade through first cut grooves while the cutting blade is positioned at such a height that a lowermost end of the cutting blade is lower than an upper end of the body of metal; and a second metal burr removing step of moving the cutting blade through the second cut grooves while the cutting blade is positioned at such a height that the lowermost end of the cutting blade is lower than the upper end of the body of metal. A liquid containing an organic acid and an oxidizing agent is supplied to the workpiece in the first metal burr removing step and the second metal burr removing step. (Figure 3A)
SG10201803307SA 2017-05-09 2018-04-19 Method of processing workpiece SG10201803307SA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017092985A JP6949421B2 (en) 2017-05-09 2017-05-09 Processing method

Publications (1)

Publication Number Publication Date
SG10201803307SA true SG10201803307SA (en) 2018-12-28

Family

ID=63962734

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201803307SA SG10201803307SA (en) 2017-05-09 2018-04-19 Method of processing workpiece

Country Status (7)

Country Link
US (1) US10283410B2 (en)
JP (1) JP6949421B2 (en)
KR (1) KR102448221B1 (en)
CN (1) CN108878355B (en)
DE (1) DE102018207131A1 (en)
SG (1) SG10201803307SA (en)
TW (1) TWI751324B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7005281B2 (en) * 2017-10-31 2022-01-21 株式会社ディスコ Processing method of work piece
CN114101784A (en) * 2021-12-21 2022-03-01 新疆八一钢铁股份有限公司 Elastic flat fixed-length shearing method for stepped shear blades

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4394210B2 (en) * 1999-09-08 2010-01-06 株式会社ディスコ Cutting method
TWI228780B (en) * 2000-05-11 2005-03-01 Disco Corp Semiconductor wafer dividing method
US20030188685A1 (en) * 2002-04-08 2003-10-09 Applied Materials, Inc. Laser drilled surfaces for substrate processing chambers
JP4405719B2 (en) * 2002-10-17 2010-01-27 株式会社ルネサステクノロジ Semiconductor wafer
JP2004288962A (en) * 2003-03-24 2004-10-14 Tokyo Seimitsu Co Ltd Method for dicing
JP2005039088A (en) * 2003-07-16 2005-02-10 Sanyo Electric Co Ltd Cutting method, cutter and process for manufacturing semiconductor device
JP4540421B2 (en) * 2004-07-28 2010-09-08 株式会社ディスコ Dicing method
KR100737610B1 (en) * 2005-04-28 2007-07-10 엘에스전선 주식회사 A dicing die adhesive film for semi-conductor
JP2008130929A (en) * 2006-11-22 2008-06-05 Matsushita Electric Ind Co Ltd Semiconductor device and manufacturing method of same
JP5133660B2 (en) * 2007-11-27 2013-01-30 株式会社ディスコ Breaking method of adhesive film mounted on backside of wafer
JP5226472B2 (en) * 2008-11-17 2013-07-03 株式会社ディスコ Cutting method
JP5659033B2 (en) * 2011-02-04 2015-01-28 株式会社東芝 Manufacturing method of semiconductor device
JP2014007229A (en) * 2012-06-22 2014-01-16 Hitachi Chemical Co Ltd Semiconductor device manufacturing method
JP2015123514A (en) * 2013-12-25 2015-07-06 株式会社ディスコ Processing method
JP2015126022A (en) * 2013-12-25 2015-07-06 株式会社ディスコ Processing method
JP6274926B2 (en) * 2014-03-17 2018-02-07 株式会社ディスコ Cutting method
US10071566B2 (en) * 2015-04-03 2018-09-11 Canon Finetech Nisca Inc. Transfer material, recorded matter, method of manufacturing recorded matter, image-recording apparatus, and apparatus for manufacturing recorded matter

Also Published As

Publication number Publication date
CN108878355A (en) 2018-11-23
JP6949421B2 (en) 2021-10-13
TW201901782A (en) 2019-01-01
US10283410B2 (en) 2019-05-07
CN108878355B (en) 2023-12-15
KR20180123637A (en) 2018-11-19
JP2018190852A (en) 2018-11-29
DE102018207131A1 (en) 2018-11-15
TWI751324B (en) 2022-01-01
US20180330990A1 (en) 2018-11-15
KR102448221B1 (en) 2022-09-27

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