SG10201802538VA - Plate-shaped workpiece processing method - Google Patents

Plate-shaped workpiece processing method

Info

Publication number
SG10201802538VA
SG10201802538VA SG10201802538VA SG10201802538VA SG10201802538VA SG 10201802538V A SG10201802538V A SG 10201802538VA SG 10201802538V A SG10201802538V A SG 10201802538VA SG 10201802538V A SG10201802538V A SG 10201802538VA SG 10201802538V A SG10201802538V A SG 10201802538VA
Authority
SG
Singapore
Prior art keywords
plate
shaped workpiece
cutting
processing method
division line
Prior art date
Application number
SG10201802538VA
Inventor
Takenouchi Kenji
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of SG10201802538VA publication Critical patent/SG10201802538VA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

Abstract

PLATE-SHAPED WORKPIECE PROCESSING METHOD Disclosed herein is a plate-shaped workpiece processing method for processing a plate-shaped workpiece having a division line and a metal member formed on the division line or in an area corresponding to the division line. The plate-shaped workpiece processing method includes a holding step of holding the plate-shaped workpiece on a chuck table in the condition where the metal member is oriented downward, a first cutting step of cutting the plate-shaped workpiece along the division line by using a first cutting blade after performing the holding step, thereby forming a first cut groove having a bottom not reaching the metal member, and a second cutting step of cutting the plate-shaped workpiece along the first cut groove by using a second cutting blade after performing the first cutting step, thereby forming a second cut groove fully cutting the plate-shaped workpiece along the division line so as to divide the metal member. The second cutting step includes the step of supplying a cutting fluid containing an organic acid and an oxidizing agent to the plate-shaped workpiece. (Figure 4B)
SG10201802538VA 2017-04-04 2018-03-27 Plate-shaped workpiece processing method SG10201802538VA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017074247A JP2018181900A (en) 2017-04-04 2017-04-04 Plate-like workpiece processing method

Publications (1)

Publication Number Publication Date
SG10201802538VA true SG10201802538VA (en) 2018-11-29

Family

ID=63525722

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201802538VA SG10201802538VA (en) 2017-04-04 2018-03-27 Plate-shaped workpiece processing method

Country Status (7)

Country Link
US (1) US10665482B2 (en)
JP (1) JP2018181900A (en)
KR (1) KR20180112696A (en)
CN (1) CN108695247A (en)
DE (1) DE102018205031A1 (en)
SG (1) SG10201802538VA (en)
TW (1) TW201838013A (en)

Family Cites Families (31)

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JPH0574932A (en) * 1991-09-17 1993-03-26 Fujitsu Ltd Dicing method for semiconductor wafer
JPH06349926A (en) 1993-06-12 1994-12-22 Hitachi Ltd Semiconductor device
JPH0955573A (en) 1995-08-10 1997-02-25 Disco Abrasive Syst Ltd Cutting method for resin board
US6310017B1 (en) 1999-02-01 2001-10-30 Ct Associates, Inc. Cleaner composition, method for making and using same
JP3440888B2 (en) 1999-06-21 2003-08-25 株式会社村田製作所 Dicing blade and method for manufacturing electronic component
US6280298B1 (en) 1999-11-24 2001-08-28 Intel Corporation Test probe cleaning
TWI228780B (en) * 2000-05-11 2005-03-01 Disco Corp Semiconductor wafer dividing method
JP2002231658A (en) * 2001-01-30 2002-08-16 Takemoto Denki Seisakusho:Kk Method for cutting semiconductor wafer
US6596562B1 (en) 2002-01-03 2003-07-22 Intel Corporation Semiconductor wafer singulation method
US6791197B1 (en) 2002-08-26 2004-09-14 Integrated Device Technology, Inc. Reducing layer separation and cracking in semiconductor devices
US7855130B2 (en) * 2003-04-21 2010-12-21 International Business Machines Corporation Corrosion inhibitor additives to prevent semiconductor device bond-pad corrosion during wafer dicing operations
US7087452B2 (en) 2003-04-22 2006-08-08 Intel Corporation Edge arrangements for integrated circuit chips
JP4231349B2 (en) 2003-07-02 2009-02-25 株式会社ディスコ Laser processing method and laser processing apparatus
JP2006140341A (en) 2004-11-12 2006-06-01 Disco Abrasive Syst Ltd Dividing method of wafer
JP4751634B2 (en) 2005-03-31 2011-08-17 富士通セミコンダクター株式会社 Manufacturing method of semiconductor device
US20080191318A1 (en) 2007-02-09 2008-08-14 Advanced Micro Devices, Inc. Semiconductor device and method of sawing semiconductor device
US8629532B2 (en) 2007-05-08 2014-01-14 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor wafer with assisting dicing structure and dicing method thereof
JP5419596B2 (en) 2009-09-02 2014-02-19 兼房株式会社 Fluid supply mechanism for rotating tools
JP5480923B2 (en) 2011-05-13 2014-04-23 シャープ株式会社 Semiconductor module manufacturing method and semiconductor module
JP2013161998A (en) 2012-02-07 2013-08-19 Disco Abrasive Syst Ltd Cutting method
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US9054192B1 (en) * 2013-12-20 2015-06-09 International Business Machines Corporation Integration of Ge-containing fins and compound semiconductor fins
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Also Published As

Publication number Publication date
CN108695247A (en) 2018-10-23
US10665482B2 (en) 2020-05-26
DE102018205031A1 (en) 2018-10-04
US20180286709A1 (en) 2018-10-04
TW201838013A (en) 2018-10-16
KR20180112696A (en) 2018-10-12
JP2018181900A (en) 2018-11-15

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