SG10201802536TA - Plate-shaped workpiece processing method - Google Patents

Plate-shaped workpiece processing method

Info

Publication number
SG10201802536TA
SG10201802536TA SG10201802536TA SG10201802536TA SG10201802536TA SG 10201802536T A SG10201802536T A SG 10201802536TA SG 10201802536T A SG10201802536T A SG 10201802536TA SG 10201802536T A SG10201802536T A SG 10201802536TA SG 10201802536T A SG10201802536T A SG 10201802536TA
Authority
SG
Singapore
Prior art keywords
plate
shaped workpiece
cutting
processing method
division line
Prior art date
Application number
SG10201802536TA
Inventor
Takenouchi Kenji
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of SG10201802536TA publication Critical patent/SG10201802536TA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
    • B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP

Abstract

PLATE-SHAPED WORKPIECE PROCESSING METHOD Disclosed herein is a plate-shaped workpiece processing method for processing a plate-shaped workpiece having a division line and a metal member formed on the division line or in an area corresponding to the division line. The plate-shaped workpiece processing method includes a holding step of holding the plate-shaped workpiece on a chuck table in the condition where the metal member is exposed, a first cutting step of cutting the plate-shaped workpiece along the division line by using a first cutting blade after performing the holding step, thereby forming a first cut groove dividing the metal member, and a second cutting step of cutting the plate-shaped workpiece along the first cut groove by using a second cutting blade after performing the first cutting step, thereby forming a second cut groove fully cutting the plate-shaped workpiece. The first cutting step includes the step of supplying a cutting fluid containing an organic acid and an oxidizing agent to the plate-shaped workpiece. (Figure 4)
SG10201802536TA 2017-04-04 2018-03-27 Plate-shaped workpiece processing method SG10201802536TA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017074246A JP2018181899A (en) 2017-04-04 2017-04-04 Plate-like workpiece processing method

Publications (1)

Publication Number Publication Date
SG10201802536TA true SG10201802536TA (en) 2018-11-29

Family

ID=63525721

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201802536TA SG10201802536TA (en) 2017-04-04 2018-03-27 Plate-shaped workpiece processing method

Country Status (7)

Country Link
US (1) US10607865B2 (en)
JP (1) JP2018181899A (en)
KR (1) KR20180112701A (en)
CN (1) CN108695146A (en)
DE (1) DE102018205032A1 (en)
SG (1) SG10201802536TA (en)
TW (1) TWI738980B (en)

Family Cites Families (25)

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JPH06349926A (en) 1993-06-12 1994-12-22 Hitachi Ltd Semiconductor device
JPH0955573A (en) 1995-08-10 1997-02-25 Disco Abrasive Syst Ltd Cutting method for resin board
US6310017B1 (en) 1999-02-01 2001-10-30 Ct Associates, Inc. Cleaner composition, method for making and using same
JP3440888B2 (en) 1999-06-21 2003-08-25 株式会社村田製作所 Dicing blade and method for manufacturing electronic component
US6280298B1 (en) 1999-11-24 2001-08-28 Intel Corporation Test probe cleaning
US6596562B1 (en) 2002-01-03 2003-07-22 Intel Corporation Semiconductor wafer singulation method
US6791197B1 (en) * 2002-08-26 2004-09-14 Integrated Device Technology, Inc. Reducing layer separation and cracking in semiconductor devices
JP2004259936A (en) * 2003-02-26 2004-09-16 Disco Abrasive Syst Ltd Treatment method of qfn substrate
US7855130B2 (en) * 2003-04-21 2010-12-21 International Business Machines Corporation Corrosion inhibitor additives to prevent semiconductor device bond-pad corrosion during wafer dicing operations
US7087452B2 (en) 2003-04-22 2006-08-08 Intel Corporation Edge arrangements for integrated circuit chips
JP4231349B2 (en) 2003-07-02 2009-02-25 株式会社ディスコ Laser processing method and laser processing apparatus
JP4751634B2 (en) 2005-03-31 2011-08-17 富士通セミコンダクター株式会社 Manufacturing method of semiconductor device
US20080191318A1 (en) 2007-02-09 2008-08-14 Advanced Micro Devices, Inc. Semiconductor device and method of sawing semiconductor device
US8629532B2 (en) 2007-05-08 2014-01-14 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor wafer with assisting dicing structure and dicing method thereof
JP5419596B2 (en) 2009-09-02 2014-02-19 兼房株式会社 Fluid supply mechanism for rotating tools
JP5480923B2 (en) 2011-05-13 2014-04-23 シャープ株式会社 Semiconductor module manufacturing method and semiconductor module
JP2013161998A (en) 2012-02-07 2013-08-19 Disco Abrasive Syst Ltd Cutting method
US8952413B2 (en) 2012-03-08 2015-02-10 Micron Technology, Inc. Etched trenches in bond materials for die singulation, and associated systems and methods
US8859397B2 (en) 2012-07-13 2014-10-14 Applied Materials, Inc. Method of coating water soluble mask for laser scribing and plasma etch
US9085049B2 (en) 2012-11-30 2015-07-21 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for manufacturing semiconductor device
JP6274926B2 (en) * 2014-03-17 2018-02-07 株式会社ディスコ Cutting method
US9130057B1 (en) 2014-06-30 2015-09-08 Applied Materials, Inc. Hybrid dicing process using a blade and laser
JP6426407B2 (en) * 2014-09-03 2018-11-21 株式会社ディスコ Wafer processing method
WO2016052444A1 (en) 2014-09-29 2016-04-07 リンテック株式会社 Base for sheets for semiconductor wafer processing, sheet for semiconductor wafer processing, and method for manufacturing semiconductor device
US10535554B2 (en) 2016-12-14 2020-01-14 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor die having edge with multiple gradients and method for forming the same

Also Published As

Publication number Publication date
TW201838012A (en) 2018-10-16
DE102018205032A1 (en) 2018-10-04
US10607865B2 (en) 2020-03-31
JP2018181899A (en) 2018-11-15
CN108695146A (en) 2018-10-23
US20180286708A1 (en) 2018-10-04
TWI738980B (en) 2021-09-11
KR20180112701A (en) 2018-10-12

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