SG10201802539SA - Workpiece processing method - Google Patents

Workpiece processing method

Info

Publication number
SG10201802539SA
SG10201802539SA SG10201802539SA SG10201802539SA SG10201802539SA SG 10201802539S A SG10201802539S A SG 10201802539SA SG 10201802539S A SG10201802539S A SG 10201802539SA SG 10201802539S A SG10201802539S A SG 10201802539SA SG 10201802539S A SG10201802539S A SG 10201802539SA
Authority
SG
Singapore
Prior art keywords
workpiece
cutting
processing method
division line
holding
Prior art date
Application number
SG10201802539SA
Inventor
Takenouchi Kenji
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of SG10201802539SA publication Critical patent/SG10201802539SA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
    • B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Optics & Photonics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Plasma & Fusion (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)

Abstract

WORKPIECE PROCESSING METHOD A processing method for processing a plate-shaped workpiece having a division line on the front side and a multilayer member containing metal on the division line is provided. The processing method includes a holding step of holding the back side of the workpiece on a holding table in the condition where the multilayer member formed on the division line is exposed, a cutting step of cutting the workpiece along the division line by using a cutting blade after performing the holding step, thereby forming a cut groove dividing the multilayer member, and a laser processing step of applying a laser beam to the workpiece along the cut groove after performing the cutting step. The cutting step includes the step of supplying a cutting fluid containing an organic acid and an oxidizing agent to the workpiece. (Figure 3)
SG10201802539SA 2017-04-04 2018-03-27 Workpiece processing method SG10201802539SA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017074248A JP2018181901A (en) 2017-04-04 2017-04-04 Processing method

Publications (1)

Publication Number Publication Date
SG10201802539SA true SG10201802539SA (en) 2018-11-29

Family

ID=63525711

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201802539SA SG10201802539SA (en) 2017-04-04 2018-03-27 Workpiece processing method

Country Status (7)

Country Link
US (1) US10468302B2 (en)
JP (1) JP2018181901A (en)
KR (1) KR20180112695A (en)
CN (1) CN108711551A (en)
DE (1) DE102018205030A1 (en)
SG (1) SG10201802539SA (en)
TW (1) TW201903854A (en)

Family Cites Families (33)

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JPS6349926A (en) 1986-08-20 1988-03-02 Nec Corp Parallel execution system for plural sort processing
JPH06349926A (en) 1993-06-12 1994-12-22 Hitachi Ltd Semiconductor device
JPH0955573A (en) 1995-08-10 1997-02-25 Disco Abrasive Syst Ltd Cutting method for resin board
US6310017B1 (en) 1999-02-01 2001-10-30 Ct Associates, Inc. Cleaner composition, method for making and using same
JP3440888B2 (en) 1999-06-21 2003-08-25 株式会社村田製作所 Dicing blade and method for manufacturing electronic component
US6280298B1 (en) 1999-11-24 2001-08-28 Intel Corporation Test probe cleaning
US6596562B1 (en) 2002-01-03 2003-07-22 Intel Corporation Semiconductor wafer singulation method
US6791197B1 (en) * 2002-08-26 2004-09-14 Integrated Device Technology, Inc. Reducing layer separation and cracking in semiconductor devices
US7855130B2 (en) 2003-04-21 2010-12-21 International Business Machines Corporation Corrosion inhibitor additives to prevent semiconductor device bond-pad corrosion during wafer dicing operations
US7087452B2 (en) 2003-04-22 2006-08-08 Intel Corporation Edge arrangements for integrated circuit chips
JP4231349B2 (en) 2003-07-02 2009-02-25 株式会社ディスコ Laser processing method and laser processing apparatus
JP2006140341A (en) 2004-11-12 2006-06-01 Disco Abrasive Syst Ltd Dividing method of wafer
JP4751634B2 (en) 2005-03-31 2011-08-17 富士通セミコンダクター株式会社 Manufacturing method of semiconductor device
US20080191318A1 (en) 2007-02-09 2008-08-14 Advanced Micro Devices, Inc. Semiconductor device and method of sawing semiconductor device
US8629532B2 (en) 2007-05-08 2014-01-14 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor wafer with assisting dicing structure and dicing method thereof
JP5419596B2 (en) 2009-09-02 2014-02-19 兼房株式会社 Fluid supply mechanism for rotating tools
JP5480923B2 (en) 2011-05-13 2014-04-23 シャープ株式会社 Semiconductor module manufacturing method and semiconductor module
JP2013161998A (en) 2012-02-07 2013-08-19 Disco Abrasive Syst Ltd Cutting method
US8952413B2 (en) 2012-03-08 2015-02-10 Micron Technology, Inc. Etched trenches in bond materials for die singulation, and associated systems and methods
JP5996260B2 (en) * 2012-05-09 2016-09-21 株式会社ディスコ Workpiece division method
US8859397B2 (en) 2012-07-13 2014-10-14 Applied Materials, Inc. Method of coating water soluble mask for laser scribing and plasma etch
US9085049B2 (en) 2012-11-30 2015-07-21 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for manufacturing semiconductor device
JP6274926B2 (en) * 2014-03-17 2018-02-07 株式会社ディスコ Cutting method
US9460963B2 (en) 2014-03-26 2016-10-04 Globalfoundries Inc. Self-aligned contacts and methods of fabrication
US9275902B2 (en) 2014-03-26 2016-03-01 Applied Materials, Inc. Dicing processes for thin wafers with bumps on wafer backside
JP2015207604A (en) * 2014-04-17 2015-11-19 株式会社ディスコ Wafer processing method
US9130057B1 (en) 2014-06-30 2015-09-08 Applied Materials, Inc. Hybrid dicing process using a blade and laser
US9936364B2 (en) * 2014-07-03 2018-04-03 Cisco Technology, Inc. Mobile device wireless identifier assignment for emergency calls
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Also Published As

Publication number Publication date
JP2018181901A (en) 2018-11-15
TW201903854A (en) 2019-01-16
US10468302B2 (en) 2019-11-05
DE102018205030A1 (en) 2018-10-04
KR20180112695A (en) 2018-10-12
CN108711551A (en) 2018-10-26
US20180286756A1 (en) 2018-10-04

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