SG10201705396VA - Additives for barrier chemical mechanical planarization - Google Patents

Additives for barrier chemical mechanical planarization

Info

Publication number
SG10201705396VA
SG10201705396VA SG10201705396VA SG10201705396VA SG10201705396VA SG 10201705396V A SG10201705396V A SG 10201705396VA SG 10201705396V A SG10201705396V A SG 10201705396VA SG 10201705396V A SG10201705396V A SG 10201705396VA SG 10201705396V A SG10201705396V A SG 10201705396VA
Authority
SG
Singapore
Prior art keywords
additives
chemical mechanical
mechanical planarization
barrier chemical
barrier
Prior art date
Application number
SG10201705396VA
Other languages
English (en)
Inventor
Gary Graham Maitland
Stender Matthias
Chandrakant Tamboli Dnyanesh
Shi Xiaobo
Original Assignee
Versum Mat Us Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Versum Mat Us Llc filed Critical Versum Mat Us Llc
Publication of SG10201705396VA publication Critical patent/SG10201705396VA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/06—Other polishing compositions
    • C09G1/14—Other polishing compositions based on non-waxy substances
    • C09G1/16—Other polishing compositions based on non-waxy substances on natural or synthetic resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
SG10201705396VA 2016-07-01 2017-06-30 Additives for barrier chemical mechanical planarization SG10201705396VA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201662357571P 2016-07-01 2016-07-01
US15/630,584 US10253216B2 (en) 2016-07-01 2017-06-22 Additives for barrier chemical mechanical planarization

Publications (1)

Publication Number Publication Date
SG10201705396VA true SG10201705396VA (en) 2018-02-27

Family

ID=59269965

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201705396VA SG10201705396VA (en) 2016-07-01 2017-06-30 Additives for barrier chemical mechanical planarization

Country Status (8)

Country Link
US (1) US10253216B2 (zh)
EP (1) EP3263667B1 (zh)
JP (1) JP6643281B2 (zh)
KR (1) KR101954380B1 (zh)
CN (1) CN107586517B (zh)
IL (1) IL253263B (zh)
SG (1) SG10201705396VA (zh)
TW (1) TWI646161B (zh)

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US20200102476A1 (en) * 2018-09-28 2020-04-02 Versum Materials Us, Llc Barrier Slurry Removal Rate Improvement
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WO2020120641A1 (en) * 2018-12-12 2020-06-18 Basf Se Chemical mechanical polishing of substrates containing copper and ruthenium
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KR102570805B1 (ko) * 2019-11-01 2023-08-24 삼성에스디아이 주식회사 텅스텐 패턴 웨이퍼 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼 연마 방법
TWI743989B (zh) * 2019-11-15 2021-10-21 日商Ｊｓｒ股份有限公司 化學機械研磨用組成物以及化學機械研磨方法
JP2021080441A (ja) * 2019-11-20 2021-05-27 株式会社フジミインコーポレーテッド 研磨組成物、研磨方法および基板の製造方法
KR102316237B1 (ko) * 2019-12-19 2021-10-25 주식회사 케이씨텍 멀티선택비 구현이 가능한 연마용 슬러리 조성물
CN114929821B (zh) * 2020-01-07 2023-12-19 Cmc材料有限责任公司 经衍生的聚氨基酸
US20210371702A1 (en) * 2020-05-28 2021-12-02 Taiwan Semiconductor Manufacturing Company Ltd. Slurry composition and method for polishing and integratged circuit
US11659771B2 (en) * 2020-11-25 2023-05-23 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for integrating MRAM and logic devices
CN113583572B (zh) * 2021-07-09 2022-08-05 万华化学集团电子材料有限公司 一种钨化学机械抛光液及其应用
CN117858929A (zh) * 2021-08-25 2024-04-09 Cmc材料有限责任公司 包括阴离子性研磨剂的cmp组合物
KR20240063973A (ko) * 2021-09-23 2024-05-13 씨엠씨 머티리얼즈 엘엘씨 유전체의 cmp에 사용하기 위한 고분자량 중합체를 함유하는 실리카계 슬러리 조성물
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Also Published As

Publication number Publication date
EP3263667B1 (en) 2019-04-24
EP3263667A1 (en) 2018-01-03
JP2018019075A (ja) 2018-02-01
TW201802204A (zh) 2018-01-16
KR20180004019A (ko) 2018-01-10
KR101954380B1 (ko) 2019-03-05
CN107586517A (zh) 2018-01-16
US10253216B2 (en) 2019-04-09
IL253263B (en) 2021-05-31
JP6643281B2 (ja) 2020-02-12
TWI646161B (zh) 2019-01-01
IL253263A0 (en) 2017-09-28
CN107586517B (zh) 2020-11-13
US20180002571A1 (en) 2018-01-04

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