PL1660606T3 - Cząstki materiału ściernego do chemicznego mechanicznego polerowania - Google Patents

Cząstki materiału ściernego do chemicznego mechanicznego polerowania

Info

Publication number
PL1660606T3
PL1660606T3 PL04777834T PL04777834T PL1660606T3 PL 1660606 T3 PL1660606 T3 PL 1660606T3 PL 04777834 T PL04777834 T PL 04777834T PL 04777834 T PL04777834 T PL 04777834T PL 1660606 T3 PL1660606 T3 PL 1660606T3
Authority
PL
Poland
Prior art keywords
mechanical polishing
chemical mechanical
abrasive particles
abrasive
particles
Prior art date
Application number
PL04777834T
Other languages
English (en)
Inventor
Jia-Ni Chu
James Neil Pryor
Original Assignee
Grace W R & Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=34079279&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=PL1660606(T3) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Grace W R & Co filed Critical Grace W R & Co
Publication of PL1660606T3 publication Critical patent/PL1660606T3/pl

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
PL04777834T 2003-07-11 2004-07-09 Cząstki materiału ściernego do chemicznego mechanicznego polerowania PL1660606T3 (pl)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US48668603P 2003-07-11 2003-07-11
PCT/US2004/021998 WO2005007770A1 (en) 2003-07-11 2004-07-09 Abrasive particles for chemical mechanical polishing
EP04777834.5A EP1660606B1 (en) 2003-07-11 2004-07-09 Abrasive particles for chemical mechanical polishing

Publications (1)

Publication Number Publication Date
PL1660606T3 true PL1660606T3 (pl) 2014-02-28

Family

ID=34079279

Family Applications (1)

Application Number Title Priority Date Filing Date
PL04777834T PL1660606T3 (pl) 2003-07-11 2004-07-09 Cząstki materiału ściernego do chemicznego mechanicznego polerowania

Country Status (17)

Country Link
US (1) US20060175295A1 (pl)
EP (1) EP1660606B1 (pl)
JP (1) JP2007531631A (pl)
KR (1) KR101134827B1 (pl)
CN (1) CN1849379B (pl)
AU (1) AU2004257233A1 (pl)
BR (1) BRPI0412515A (pl)
CA (1) CA2532114A1 (pl)
DK (1) DK1660606T3 (pl)
ES (1) ES2436215T3 (pl)
MX (1) MXPA06000251A (pl)
NO (1) NO20060576L (pl)
PL (1) PL1660606T3 (pl)
PT (1) PT1660606E (pl)
RU (1) RU2356926C2 (pl)
TW (1) TWI415926B (pl)
WO (1) WO2005007770A1 (pl)

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US7897061B2 (en) * 2006-02-01 2011-03-01 Cabot Microelectronics Corporation Compositions and methods for CMP of phase change alloys
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US20080085412A1 (en) * 2006-10-04 2008-04-10 Ortiz C Yolanda Silica-coated metal oxide sols having variable metal oxide to silica ratio
JP4665886B2 (ja) * 2006-10-27 2011-04-06 富士電機デバイステクノロジー株式会社 垂直磁気記録媒体、垂直磁気記録媒体用基板、および、それらの製造方法
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JP5965906B2 (ja) * 2010-09-08 2016-08-10 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ 水性研磨組成物、及び酸化ケイ素誘電体膜とポリシリコン膜を含む基板の化学機械的な研磨方法
JP5965907B2 (ja) * 2010-09-08 2016-08-10 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ 電気機器や機械機器・光学機器用の基板の化学機械研磨用の水性研磨組成物と方法
US20130200039A1 (en) * 2010-09-08 2013-08-08 Basf Se Aqueous polishing compositions containing n-substituted diazenium dioxides and/or n'-hydroxy-diazenium oxide salts
WO2012036087A1 (ja) * 2010-09-15 2012-03-22 旭硝子株式会社 研磨剤および研磨方法
JP5979872B2 (ja) * 2011-01-31 2016-08-31 花王株式会社 磁気ディスク基板の製造方法
TWI605112B (zh) * 2011-02-21 2017-11-11 福吉米股份有限公司 研磨用組成物
JP5979871B2 (ja) * 2011-03-09 2016-08-31 花王株式会社 磁気ディスク基板の製造方法
US20120264303A1 (en) * 2011-04-15 2012-10-18 Taiwan Semiconductor Manufacturing Co., Ltd. Chemical mechanical polishing slurry, system and method
EP2742103B1 (en) 2011-08-01 2016-09-21 Basf Se A PROCESS FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES COMPRISING THE CHEMICAL MECHANICAL POLISHING OF ELEMENTAL GERMANIUM AND/OR Si1-xGex MATERIAL IN THE PRESENCE OF A CMP COMPOSITION COMPRISING A SPECIFIC ORGANIC COMPOUND
CN102344761A (zh) * 2011-08-03 2012-02-08 南通海迅天恒纳米科技有限公司 一种铈掺杂二氧化硅溶胶的制备方法
WO2013077368A1 (ja) * 2011-11-25 2013-05-30 株式会社 フジミインコーポレーテッド 研磨用組成物
JP6077208B2 (ja) * 2011-11-25 2017-02-08 株式会社フジミインコーポレーテッド 研磨用組成物
EP2794733B1 (en) * 2011-12-21 2019-05-15 Basf Se Method for manufacturing cmp composition and application thereof
EP3705177A1 (en) * 2012-01-10 2020-09-09 Saint-Gobain Ceramics & Plastics Inc. Abrasive particles having complex shapes and methods of forming same
EP2969391B1 (en) 2013-03-15 2018-04-25 Ecolab USA Inc. Methods of polishing sapphire surfaces
JP2013177617A (ja) * 2013-05-09 2013-09-09 Jgc Catalysts & Chemicals Ltd 研磨用シリカゾルおよび研磨用組成物
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JP6407582B2 (ja) * 2013-07-03 2018-10-17 Hoya株式会社 基板の製造方法、多層反射膜付き基板の製造方法、マスクブランクの製造方法、転写用マスクの製造方法、及び基板加工装置
US9190091B2 (en) * 2013-08-02 2015-11-17 HGST Netherlands, B.V. Composition and method for planarized bit-patterned magnetic media
US9340706B2 (en) * 2013-10-10 2016-05-17 Cabot Microelectronics Corporation Mixed abrasive polishing compositions
US20150114928A1 (en) * 2013-10-30 2015-04-30 Jia-Ni Chu Abrasive Particles for Chemical Mechanical Polishing
CN104650739A (zh) * 2013-11-22 2015-05-27 安集微电子（上海）有限公司 一种用于抛光二氧化硅基材的化学机械抛光液
JP6665852B2 (ja) * 2015-02-26 2020-03-13 堺化学工業株式会社 負帯電性基板の研磨方法、及び、高表面平滑性の負帯電性基板の製造方法
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CN105463467A (zh) * 2015-11-30 2016-04-06 江苏中晶科技有限公司 高精密弱碱性不锈钢抛光液及其制备方法
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CN108728849A (zh) * 2018-05-17 2018-11-02 合肥协耀玻璃制品有限公司 一种不锈钢材料用抛光剂及其制备方法
CN108587478B (zh) * 2018-07-03 2020-09-25 中国人民解放军国防科技大学 一种改性纳米二氧化硅复合抛光液及其应用
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Also Published As

Publication number Publication date
CN1849379A (zh) 2006-10-18
NO20060576L (no) 2006-02-03
EP1660606B1 (en) 2013-09-04
RU2006104117A (ru) 2006-07-27
TW200516132A (en) 2005-05-16
BRPI0412515A (pt) 2006-09-19
KR101134827B1 (ko) 2012-04-13
RU2356926C2 (ru) 2009-05-27
PT1660606E (pt) 2013-12-09
CN1849379B (zh) 2011-12-14
AU2004257233A1 (en) 2005-01-27
WO2005007770A1 (en) 2005-01-27
CA2532114A1 (en) 2005-01-27
TWI415926B (zh) 2013-11-21
ES2436215T3 (es) 2013-12-27
EP1660606A1 (en) 2006-05-31
JP2007531631A (ja) 2007-11-08
DK1660606T3 (da) 2013-12-02
US20060175295A1 (en) 2006-08-10
MXPA06000251A (es) 2006-03-30
KR20060041220A (ko) 2006-05-11

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