SG10201702358YA - Wafer producing method - Google Patents
Wafer producing methodInfo
- Publication number
- SG10201702358YA SG10201702358YA SG10201702358YA SG10201702358YA SG10201702358YA SG 10201702358Y A SG10201702358Y A SG 10201702358YA SG 10201702358Y A SG10201702358Y A SG 10201702358YA SG 10201702358Y A SG10201702358Y A SG 10201702358YA SG 10201702358Y A SG10201702358Y A SG 10201702358YA
- Authority
- SG
- Singapore
- Prior art keywords
- producing method
- wafer producing
- wafer
- producing
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/8213—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using SiC technology
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0064—Devices for the automatic drive or the program control of the machines
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Laser Beam Processing (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016076734A JP6604891B2 (ja) | 2016-04-06 | 2016-04-06 | ウエーハの生成方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201702358YA true SG10201702358YA (en) | 2017-11-29 |
Family
ID=59930013
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201702358YA SG10201702358YA (en) | 2016-04-06 | 2017-03-23 | Wafer producing method |
Country Status (8)
Country | Link |
---|---|
US (1) | US9868177B2 (de) |
JP (1) | JP6604891B2 (de) |
KR (1) | KR102185243B1 (de) |
CN (1) | CN107262945B (de) |
DE (1) | DE102017205694B4 (de) |
MY (1) | MY187223A (de) |
SG (1) | SG10201702358YA (de) |
TW (1) | TWI703027B (de) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6429715B2 (ja) * | 2015-04-06 | 2018-11-28 | 株式会社ディスコ | ウエーハの生成方法 |
JP6478821B2 (ja) * | 2015-06-05 | 2019-03-06 | 株式会社ディスコ | ウエーハの生成方法 |
JP6690983B2 (ja) * | 2016-04-11 | 2020-04-28 | 株式会社ディスコ | ウエーハ生成方法及び実第2のオリエンテーションフラット検出方法 |
WO2017199784A1 (ja) * | 2016-05-17 | 2017-11-23 | エルシード株式会社 | 加工対象材料の切断方法 |
JP6723877B2 (ja) * | 2016-08-29 | 2020-07-15 | 株式会社ディスコ | ウエーハ生成方法 |
JP2018093046A (ja) * | 2016-12-02 | 2018-06-14 | 株式会社ディスコ | ウエーハ生成方法 |
KR20200008566A (ko) * | 2017-04-20 | 2020-01-28 | 실텍트라 게엠베하 | 구성요소가 제공되는 솔리드 스테이트 층의 두께를 감소시키는 방법 |
TWI648524B (zh) * | 2017-10-03 | 2019-01-21 | 財團法人工業技術研究院 | 多層材料加工裝置及其方法 |
JP6946153B2 (ja) * | 2017-11-16 | 2021-10-06 | 株式会社ディスコ | ウエーハの生成方法およびウエーハ生成装置 |
JP6974133B2 (ja) * | 2017-11-22 | 2021-12-01 | 株式会社ディスコ | SiCインゴットの成型方法 |
JP7034683B2 (ja) * | 2017-11-29 | 2022-03-14 | 株式会社ディスコ | 剥離装置 |
JP7009194B2 (ja) * | 2017-12-12 | 2022-01-25 | 株式会社ディスコ | ウエーハ生成装置および搬送トレー |
US10388526B1 (en) | 2018-04-20 | 2019-08-20 | Semiconductor Components Industries, Llc | Semiconductor wafer thinning systems and related methods |
US11121035B2 (en) | 2018-05-22 | 2021-09-14 | Semiconductor Components Industries, Llc | Semiconductor substrate processing methods |
US10896815B2 (en) | 2018-05-22 | 2021-01-19 | Semiconductor Components Industries, Llc | Semiconductor substrate singulation systems and related methods |
US20190363018A1 (en) | 2018-05-24 | 2019-11-28 | Semiconductor Components Industries, Llc | Die cleaning systems and related methods |
US10468304B1 (en) | 2018-05-31 | 2019-11-05 | Semiconductor Components Industries, Llc | Semiconductor substrate production systems and related methods |
US11830771B2 (en) | 2018-05-31 | 2023-11-28 | Semiconductor Components Industries, Llc | Semiconductor substrate production systems and related methods |
JP7187215B2 (ja) * | 2018-08-28 | 2022-12-12 | 株式会社ディスコ | SiC基板の加工方法 |
JP7128067B2 (ja) * | 2018-09-14 | 2022-08-30 | 株式会社ディスコ | ウエーハの生成方法およびレーザー加工装置 |
JP7327920B2 (ja) * | 2018-09-28 | 2023-08-16 | 株式会社ディスコ | ダイヤモンド基板生成方法 |
US10825733B2 (en) | 2018-10-25 | 2020-11-03 | United Silicon Carbide, Inc. | Reusable wide bandgap semiconductor substrate |
DE112019005450T5 (de) * | 2018-10-30 | 2021-08-05 | Hamamatsu Photonics K.K. | Laserbearbeitungsverfahren |
US10562130B1 (en) | 2018-12-29 | 2020-02-18 | Cree, Inc. | Laser-assisted method for parting crystalline material |
US11024501B2 (en) | 2018-12-29 | 2021-06-01 | Cree, Inc. | Carrier-assisted method for parting crystalline material along laser damage region |
US10576585B1 (en) | 2018-12-29 | 2020-03-03 | Cree, Inc. | Laser-assisted method for parting crystalline material |
WO2020213478A1 (ja) * | 2019-04-19 | 2020-10-22 | 東京エレクトロン株式会社 | 処理装置及び処理方法 |
US10611052B1 (en) | 2019-05-17 | 2020-04-07 | Cree, Inc. | Silicon carbide wafers with relaxed positive bow and related methods |
JP7330771B2 (ja) * | 2019-06-14 | 2023-08-22 | 株式会社ディスコ | ウエーハの生成方法およびウエーハの生成装置 |
JP2021168347A (ja) * | 2020-04-10 | 2021-10-21 | 株式会社ディスコ | ウエーハの生成方法 |
CN111986986B (zh) * | 2020-08-24 | 2024-05-03 | 松山湖材料实验室 | 一种晶圆的剥离方法及剥离装置 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3813692B2 (ja) * | 1997-05-28 | 2006-08-23 | 株式会社ディスコ | ダイシング装置における半導体ウェーハ内部の特殊なパターンの検出方法 |
JP2000094221A (ja) | 1998-09-24 | 2000-04-04 | Toyo Advanced Technologies Co Ltd | 放電式ワイヤソー |
JP2005129851A (ja) * | 2003-10-27 | 2005-05-19 | Disco Abrasive Syst Ltd | レーザ光線を利用した加工方法 |
JP4598407B2 (ja) * | 2004-01-09 | 2010-12-15 | 浜松ホトニクス株式会社 | レーザ加工方法及びレーザ加工装置 |
JP3708104B2 (ja) * | 2004-01-13 | 2005-10-19 | 浜松ホトニクス株式会社 | レーザ加工方法及びレーザ加工装置 |
JP2010021398A (ja) * | 2008-07-11 | 2010-01-28 | Disco Abrasive Syst Ltd | ウェーハの処理方法 |
JP2012109341A (ja) * | 2010-11-16 | 2012-06-07 | Shibuya Kogyo Co Ltd | 半導体材料の切断方法と切断装置 |
TWI457191B (zh) * | 2011-02-04 | 2014-10-21 | Mitsuboshi Diamond Ind Co Ltd | 雷射切割方法及雷射加工裝置 |
JP5917862B2 (ja) * | 2011-08-30 | 2016-05-18 | 浜松ホトニクス株式会社 | 加工対象物切断方法 |
JP5964580B2 (ja) * | 2011-12-26 | 2016-08-03 | 株式会社ディスコ | ウェーハの加工方法 |
CN105142853B (zh) * | 2013-02-28 | 2017-07-04 | Ipg光子公司 | 用于加工蓝宝石的激光系统和方法 |
CN104439711B (zh) * | 2013-09-17 | 2017-01-18 | 上海华虹集成电路有限责任公司 | 降低芯片遭到物理应力损伤的激光划片方法 |
JP2016015463A (ja) * | 2014-06-10 | 2016-01-28 | エルシード株式会社 | SiC材料の加工方法及びSiC材料 |
JP6390898B2 (ja) | 2014-08-22 | 2018-09-19 | アイシン精機株式会社 | 基板の製造方法、加工対象物の切断方法、及び、レーザ加工装置 |
JP6358941B2 (ja) * | 2014-12-04 | 2018-07-18 | 株式会社ディスコ | ウエーハの生成方法 |
JP6399913B2 (ja) * | 2014-12-04 | 2018-10-03 | 株式会社ディスコ | ウエーハの生成方法 |
-
2016
- 2016-04-06 JP JP2016076734A patent/JP6604891B2/ja active Active
-
2017
- 2017-02-23 TW TW106106135A patent/TWI703027B/zh active
- 2017-03-22 MY MYPI2017700964A patent/MY187223A/en unknown
- 2017-03-23 SG SG10201702358YA patent/SG10201702358YA/en unknown
- 2017-03-29 KR KR1020170039867A patent/KR102185243B1/ko active IP Right Grant
- 2017-03-29 US US15/472,945 patent/US9868177B2/en active Active
- 2017-04-04 DE DE102017205694.0A patent/DE102017205694B4/de active Active
- 2017-04-05 CN CN201710216651.8A patent/CN107262945B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN107262945B (zh) | 2020-09-01 |
KR102185243B1 (ko) | 2020-12-01 |
US20170291254A1 (en) | 2017-10-12 |
US9868177B2 (en) | 2018-01-16 |
DE102017205694A1 (de) | 2017-10-12 |
DE102017205694B4 (de) | 2021-12-09 |
JP2017188586A (ja) | 2017-10-12 |
JP6604891B2 (ja) | 2019-11-13 |
TW201736071A (zh) | 2017-10-16 |
KR20170114937A (ko) | 2017-10-16 |
MY187223A (en) | 2021-09-13 |
TWI703027B (zh) | 2020-09-01 |
CN107262945A (zh) | 2017-10-20 |
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