JP6974133B2 - SiCインゴットの成型方法 - Google Patents
SiCインゴットの成型方法 Download PDFInfo
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- JP6974133B2 JP6974133B2 JP2017224509A JP2017224509A JP6974133B2 JP 6974133 B2 JP6974133 B2 JP 6974133B2 JP 2017224509 A JP2017224509 A JP 2017224509A JP 2017224509 A JP2017224509 A JP 2017224509A JP 6974133 B2 JP6974133 B2 JP 6974133B2
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- ingot
- face
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/06—Joining of crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Laser Beam Processing (AREA)
Description
パルスレーザー光線の波長 :1064nm
繰り返し周波数 :140kHz
平均出力 :14W
パルス幅 :4ns
集光点の直径 :3μm
開口数(NA) :0.7
送り速度 :765mm/s
集光点の位置 :平坦化された端面から50μmの深さ
4:原始インゴット
4’:SiCインゴット
6:切断面
6’:第二の端面
8:成長端面
8’:平坦化された端面
8”:第一の端面
12:保持手段
34:改質層
38:第一のオリエンテーションフラット
40:第二のオリエンテーションフラット
LB:パルスレーザー光線
FP:集光点
α:オフ角
A:オフ角が形成される方向
Claims (3)
- SiCインゴットの成型方法であって、
インゴット成長基台から切断された原始インゴットの切断面を保持手段で保持する保持工程と、
該保持手段に保持された原始インゴットの端面を研削して平坦化する平坦化工程と、
平坦化された端面から原始インゴットのc面を検出するc面検出工程と、
平坦化された端面を研削してc面に対してオフ角を持って傾斜した第一の端面を形成する第一の端面形成工程と、
該第一の端面を保持手段で保持し原始インゴットの切断面を該第一の端面と平行になるように研削して第二の端面を形成する第二の端面形成工程と、
から少なくとも構成され、
該c面検出工程において、該平坦化工程において平坦化された端面からSiCに対して透過性を有する波長のレーザー光線の集光点を原始インゴットの内部に位置づけてレーザー光線を原始インゴットに照射し、SiCがSiとCとに分離すると共にクラックがc面に沿って伸長する改質層を形成し、平坦化された端面から該改質層を観察してc面を検出するSiCインゴットの成型方法。 - 該第一の端面形成工程の後、原始インゴットの周面に、オフ角が形成される方向と平行に第一のオリエンテーションフラットを形成すると共に該第一の端面側から原始インゴットをみて該第一のオリエンテーションフラットの右側に第二のオリエンテーションフラットを形成する請求項1記載のSiCインゴットの成型方法。
- 該第二のオリエンテーションフラットは該第一のオリエンテーションフラットより短く形成される請求項2記載のSiCインゴットの成型方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017224509A JP6974133B2 (ja) | 2017-11-22 | 2017-11-22 | SiCインゴットの成型方法 |
CN201811250283.XA CN109807693B (zh) | 2017-11-22 | 2018-10-25 | SiC晶锭的成型方法 |
KR1020180129106A KR102544303B1 (ko) | 2017-11-22 | 2018-10-26 | SiC 잉곳의 성형 방법 |
US16/197,701 US11534890B2 (en) | 2017-11-22 | 2018-11-21 | SiC ingot forming method |
TW107141387A TWI788466B (zh) | 2017-11-22 | 2018-11-21 | SiC錠的成型方法 |
DE102018219942.6A DE102018219942A1 (de) | 2017-11-22 | 2018-11-21 | SiC-Ingot-Ausbildungsverfahren |
Applications Claiming Priority (1)
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JP2017224509A JP6974133B2 (ja) | 2017-11-22 | 2017-11-22 | SiCインゴットの成型方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019096723A JP2019096723A (ja) | 2019-06-20 |
JP6974133B2 true JP6974133B2 (ja) | 2021-12-01 |
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JP2017224509A Active JP6974133B2 (ja) | 2017-11-22 | 2017-11-22 | SiCインゴットの成型方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US11534890B2 (ja) |
JP (1) | JP6974133B2 (ja) |
KR (1) | KR102544303B1 (ja) |
CN (1) | CN109807693B (ja) |
DE (1) | DE102018219942A1 (ja) |
TW (1) | TWI788466B (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10576585B1 (en) | 2018-12-29 | 2020-03-03 | Cree, Inc. | Laser-assisted method for parting crystalline material |
US11024501B2 (en) | 2018-12-29 | 2021-06-01 | Cree, Inc. | Carrier-assisted method for parting crystalline material along laser damage region |
US10562130B1 (en) | 2018-12-29 | 2020-02-18 | Cree, Inc. | Laser-assisted method for parting crystalline material |
US10611052B1 (en) | 2019-05-17 | 2020-04-07 | Cree, Inc. | Silicon carbide wafers with relaxed positive bow and related methods |
JP7321888B2 (ja) * | 2019-10-24 | 2023-08-07 | 株式会社ディスコ | SiCインゴットの加工方法およびレーザー加工装置 |
JP7384675B2 (ja) * | 2020-01-15 | 2023-11-21 | 株式会社ディスコ | 傾き調整機構 |
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JP4732063B2 (ja) * | 2004-08-06 | 2011-07-27 | 浜松ホトニクス株式会社 | レーザ加工方法 |
CN201044947Y (zh) * | 2006-01-17 | 2008-04-09 | 李汶军 | 晶面取向加工x射线定位仪 |
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TWI402906B (zh) * | 2007-06-25 | 2013-07-21 | Saint Gobain Ceramics | 單晶體之結晶性再定向之方法 |
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2017
- 2017-11-22 JP JP2017224509A patent/JP6974133B2/ja active Active
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2018
- 2018-10-25 CN CN201811250283.XA patent/CN109807693B/zh active Active
- 2018-10-26 KR KR1020180129106A patent/KR102544303B1/ko active IP Right Grant
- 2018-11-21 DE DE102018219942.6A patent/DE102018219942A1/de active Pending
- 2018-11-21 TW TW107141387A patent/TWI788466B/zh active
- 2018-11-21 US US16/197,701 patent/US11534890B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
DE102018219942A1 (de) | 2019-05-23 |
US20190152019A1 (en) | 2019-05-23 |
TW201925091A (zh) | 2019-07-01 |
TWI788466B (zh) | 2023-01-01 |
JP2019096723A (ja) | 2019-06-20 |
CN109807693B (zh) | 2022-08-30 |
CN109807693A (zh) | 2019-05-28 |
KR20190059206A (ko) | 2019-05-30 |
KR102544303B1 (ko) | 2023-06-15 |
US11534890B2 (en) | 2022-12-27 |
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