SG10201503189QA - Semiconductor wafer and manufacturing method thereof - Google Patents
Semiconductor wafer and manufacturing method thereofInfo
- Publication number
- SG10201503189QA SG10201503189QA SG10201503189QA SG10201503189QA SG10201503189QA SG 10201503189Q A SG10201503189Q A SG 10201503189QA SG 10201503189Q A SG10201503189Q A SG 10201503189QA SG 10201503189Q A SG10201503189Q A SG 10201503189QA SG 10201503189Q A SG10201503189Q A SG 10201503189QA
- Authority
- SG
- Singapore
- Prior art keywords
- manufacturing
- semiconductor wafer
- wafer
- semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
- H01L29/34—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being on the surface
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011098241A JP5621702B2 (ja) | 2011-04-26 | 2011-04-26 | 半導体ウェーハ及びその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201503189QA true SG10201503189QA (en) | 2015-06-29 |
Family
ID=47071813
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201503189QA SG10201503189QA (en) | 2011-04-26 | 2012-04-03 | Semiconductor wafer and manufacturing method thereof |
SG2013079629A SG194646A1 (en) | 2011-04-26 | 2012-04-03 | Semiconductor wafer and manufacturing method thereof |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG2013079629A SG194646A1 (en) | 2011-04-26 | 2012-04-03 | Semiconductor wafer and manufacturing method thereof |
Country Status (8)
Country | Link |
---|---|
US (1) | US9076750B2 (ja) |
JP (1) | JP5621702B2 (ja) |
KR (1) | KR101774850B1 (ja) |
CN (1) | CN103493184B (ja) |
DE (1) | DE112012001458B4 (ja) |
SG (2) | SG10201503189QA (ja) |
TW (1) | TWI501304B (ja) |
WO (1) | WO2012147279A1 (ja) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6180873B2 (ja) * | 2013-08-30 | 2017-08-16 | 株式会社クラレ | 繊維複合シート、研磨パッド及びその製造方法 |
KR20160148004A (ko) * | 2014-04-30 | 2016-12-23 | 1366 테크놀로지 인코포레이티드 | 다른 영역보다 상대적으로 더 두꺼운 국부적으로 제어된 영역을 갖는 얇은 반도체 웨이퍼를 제조하는 방법, 장치, 및 그 웨이퍼 |
DE102015220924B4 (de) * | 2015-10-27 | 2018-09-27 | Siltronic Ag | Suszeptor zum Halten einer Halbleiterscheibe mit Orientierungskerbe, Verfahren zum Abscheiden einer Schicht auf einer Halbleiterscheibe und Halbleiterscheibe |
JP6406238B2 (ja) * | 2015-12-18 | 2018-10-17 | 株式会社Sumco | ウェーハ研磨方法および研磨装置 |
KR101810643B1 (ko) * | 2016-02-02 | 2017-12-19 | 에스케이실트론 주식회사 | 에피텍셜 웨이퍼의 평탄도 제어 방법 |
KR102086281B1 (ko) * | 2017-04-28 | 2020-03-06 | 제이엑스금속주식회사 | 반도체 웨이퍼 및 반도체 웨이퍼의 연마 방법 |
DE102017210450A1 (de) | 2017-06-21 | 2018-12-27 | Siltronic Ag | Verfahren, Steuerungssystem und Anlage zum Bearbeiten einer Halbleiterscheibe sowie Halbleiterscheibe |
DE102017210423A1 (de) * | 2017-06-21 | 2018-12-27 | Siltronic Ag | Verfahren, Steuerungssystem und Anlage zum Bearbeiten einer Halbleiterscheibe sowie Halbleiterscheibe |
JP6799509B2 (ja) * | 2017-07-21 | 2020-12-16 | クラリオン株式会社 | 関連付けシステム、関連付け方法 |
WO2019035336A1 (ja) * | 2017-08-15 | 2019-02-21 | 信越半導体株式会社 | シリコンウエーハのエッジ形状の評価方法および評価装置、シリコンウエーハ、ならびにその選別方法および製造方法 |
JP6750592B2 (ja) | 2017-08-15 | 2020-09-02 | 信越半導体株式会社 | シリコンウエーハのエッジ形状の評価方法および評価装置、シリコンウエーハ、ならびにその選別方法および製造方法 |
JP6451825B1 (ja) * | 2017-12-25 | 2019-01-16 | 株式会社Sumco | ウェーハの両面研磨方法 |
DE102018200415A1 (de) * | 2018-01-11 | 2019-07-11 | Siltronic Ag | Halbleiterscheibe mit epitaktischer Schicht |
WO2019198458A1 (ja) * | 2018-04-13 | 2019-10-17 | 株式会社Sumco | 半導体ウェーハの評価方法および半導体ウェーハの製造方法 |
JP7067524B2 (ja) * | 2019-04-15 | 2022-05-16 | 信越半導体株式会社 | ウェーハのフラットネス測定機の選定方法及び測定方法 |
KR102413432B1 (ko) * | 2020-08-28 | 2022-06-27 | 에스케이실트론 주식회사 | 웨이퍼 및 그 형상 분석 방법 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3341258B2 (ja) | 1992-11-27 | 2002-11-05 | 株式会社東芝 | ポリッシング装置 |
JPH08257893A (ja) | 1995-03-29 | 1996-10-08 | Mitsubishi Materials Corp | ウェーハ研磨装置および研磨方法 |
JP2001326197A (ja) | 2000-03-10 | 2001-11-22 | Mitsubishi Materials Silicon Corp | 半導体ウェーハの研磨方法およびその装置 |
JP2002064071A (ja) * | 2000-06-09 | 2002-02-28 | Sumitomo Osaka Cement Co Ltd | シリコンウエハー鏡面研磨用研磨板およびシリコンウエハーの鏡面研磨方法 |
WO2001096065A1 (fr) | 2000-06-13 | 2001-12-20 | Shin-Etsu Handotai Co., Ltd. | Procede de polissage de pieces |
EP1261020A4 (en) * | 2000-10-26 | 2005-01-19 | Shinetsu Handotai Kk | PROCESS FOR PRODUCING PLATELETS, POLISHING APPARATUS AND PLATELET |
JP3612708B2 (ja) | 2001-11-29 | 2005-01-19 | 信越半導体株式会社 | 溝入り研磨布並びにワークの研磨方法及び研磨装置 |
JP3935757B2 (ja) | 2002-03-28 | 2007-06-27 | 信越半導体株式会社 | ウエーハの両面研磨装置及び両面研磨方法 |
KR20060038612A (ko) * | 2004-10-30 | 2006-05-04 | 주식회사 하이닉스반도체 | 웨이퍼의 에지 롤오프 측정 방법 |
JP4881590B2 (ja) * | 2005-07-27 | 2012-02-22 | ニッタ・ハース株式会社 | 研磨布 |
JP2007067179A (ja) * | 2005-08-31 | 2007-03-15 | Shin Etsu Handotai Co Ltd | 半導体ウエーハの鏡面研磨方法及び鏡面研磨システム |
KR100841094B1 (ko) | 2005-12-20 | 2008-06-25 | 주식회사 실트론 | 실리콘 웨이퍼 연마장치, 이에 이용되는 리테이닝어셈블리, 및 이를 이용한 실리콘 웨이퍼 평평도 보정방법 |
JP2007173815A (ja) * | 2005-12-20 | 2007-07-05 | Siltron Inc | シリコンウエハ研磨装置、これに使用されるリテーニングアセンブリ及びシリコンウエハ平坦度補正方法 |
ATE383656T1 (de) * | 2006-03-31 | 2008-01-15 | Soitec Silicon On Insulator | Verfahren zur herstellung eines verbundmaterials und verfahren zur auswahl eines wafers |
JP4904960B2 (ja) * | 2006-07-18 | 2012-03-28 | 信越半導体株式会社 | 両面研磨装置用キャリア及びこれを用いた両面研磨装置並びに両面研磨方法 |
JP2008254124A (ja) * | 2007-04-05 | 2008-10-23 | Toray Ind Inc | 研磨パッド |
JP2009090397A (ja) * | 2007-10-05 | 2009-04-30 | Nitta Haas Inc | 研磨パッド |
DE102009009497A1 (de) * | 2009-02-18 | 2010-07-08 | Siltronic Ag | Läuferscheibe zum Halten von Halbleiterscheiben während einer beidseitigen Politur der Halbleiterscheiben |
JP2011079076A (ja) * | 2009-10-05 | 2011-04-21 | Toshiba Corp | 研磨装置及び研磨方法 |
-
2011
- 2011-04-26 JP JP2011098241A patent/JP5621702B2/ja active Active
-
2012
- 2012-04-03 KR KR1020137028156A patent/KR101774850B1/ko active IP Right Grant
- 2012-04-03 CN CN201280020389.5A patent/CN103493184B/zh active Active
- 2012-04-03 SG SG10201503189QA patent/SG10201503189QA/en unknown
- 2012-04-03 SG SG2013079629A patent/SG194646A1/en unknown
- 2012-04-03 US US14/005,975 patent/US9076750B2/en active Active
- 2012-04-03 DE DE112012001458.8T patent/DE112012001458B4/de active Active
- 2012-04-03 WO PCT/JP2012/002304 patent/WO2012147279A1/ja active Application Filing
- 2012-04-09 TW TW101112481A patent/TWI501304B/zh active
Also Published As
Publication number | Publication date |
---|---|
TWI501304B (zh) | 2015-09-21 |
DE112012001458T5 (de) | 2013-12-19 |
SG194646A1 (en) | 2013-12-30 |
KR101774850B1 (ko) | 2017-09-05 |
CN103493184B (zh) | 2016-03-30 |
TW201306109A (zh) | 2013-02-01 |
WO2012147279A1 (ja) | 2012-11-01 |
CN103493184A (zh) | 2014-01-01 |
KR20140048869A (ko) | 2014-04-24 |
US9076750B2 (en) | 2015-07-07 |
JP2012231005A (ja) | 2012-11-22 |
DE112012001458B4 (de) | 2024-05-08 |
US20140008768A1 (en) | 2014-01-09 |
JP5621702B2 (ja) | 2014-11-12 |
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