SG10201405189QA - Polishing method and polishing apparatus - Google Patents

Polishing method and polishing apparatus

Info

Publication number
SG10201405189QA
SG10201405189QA SG10201405189QA SG10201405189QA SG10201405189QA SG 10201405189Q A SG10201405189Q A SG 10201405189QA SG 10201405189Q A SG10201405189Q A SG 10201405189QA SG 10201405189Q A SG10201405189Q A SG 10201405189QA SG 10201405189Q A SG10201405189Q A SG 10201405189QA
Authority
SG
Singapore
Prior art keywords
polishing
polishing apparatus
polishing method
Prior art date
Application number
SG10201405189QA
Other languages
English (en)
Inventor
Maruyama Toru
Matsuo Hisanori
Motoshima Yasuyuki
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Publication of SG10201405189QA publication Critical patent/SG10201405189QA/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/015—Temperature control
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/14—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the temperature during grinding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
    • B24B55/02—Equipment for cooling the grinding surfaces, e.g. devices for feeding coolant
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/025—Interfacing a pyrometer to an external device or network; User interface
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/48—Thermography; Techniques using wholly visual means
    • G01J5/485—Temperature profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Human Computer Interaction (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
SG10201405189QA 2013-08-27 2014-08-25 Polishing method and polishing apparatus SG10201405189QA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013175471A JP6161999B2 (ja) 2013-08-27 2013-08-27 研磨方法および研磨装置

Publications (1)

Publication Number Publication Date
SG10201405189QA true SG10201405189QA (en) 2015-03-30

Family

ID=52668358

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201405189QA SG10201405189QA (en) 2013-08-27 2014-08-25 Polishing method and polishing apparatus

Country Status (6)

Country Link
US (4) US9782870B2 (ja)
JP (2) JP6161999B2 (ja)
KR (2) KR102232431B1 (ja)
CN (2) CN110076683B (ja)
SG (1) SG10201405189QA (ja)
TW (3) TWI658897B (ja)

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG10201606197XA (en) * 2015-08-18 2017-03-30 Ebara Corp Substrate adsorption method, substrate holding apparatus, substrate polishing apparatus, elastic film, substrate adsorption determination method for substrate holding apparatus, and pressure control method for substrate holding apparatus
JP6580939B2 (ja) * 2015-10-20 2019-09-25 株式会社荏原製作所 研磨装置
KR102569631B1 (ko) * 2015-12-18 2023-08-24 주식회사 케이씨텍 화학 기계적 연마장치 및 그 제어방법
US10420154B2 (en) * 2016-02-10 2019-09-17 Qualcomm Incorporated Providing a system information block request and response
US10414018B2 (en) * 2016-02-22 2019-09-17 Ebara Corporation Apparatus and method for regulating surface temperature of polishing pad
JP6929072B2 (ja) * 2016-02-22 2021-09-01 株式会社荏原製作所 研磨パッドの表面温度を調整するための装置および方法
KR101722555B1 (ko) * 2016-03-08 2017-04-03 주식회사 케이씨텍 화학 기계적 연마장치 및 방법
US10388537B2 (en) * 2016-04-15 2019-08-20 Samsung Electronics Co., Ltd. Cleaning apparatus, chemical mechanical polishing system including the same, cleaning method after chemical mechanical polishing, and method of manufacturing semiconductor device including the same
JP6752657B2 (ja) * 2016-08-23 2020-09-09 株式会社荏原製作所 研磨方法および研磨装置
JP2018122406A (ja) 2017-02-02 2018-08-09 株式会社荏原製作所 研磨パッドの表面温度を調整するための熱交換器、研磨装置、研磨方法、およびコンピュータプログラムを記録した記録媒体
KR102232984B1 (ko) * 2017-03-02 2021-03-29 주식회사 케이씨텍 화학 기계적 연마장치
JP6923342B2 (ja) * 2017-04-11 2021-08-18 株式会社荏原製作所 研磨装置、及び、研磨方法
KR102370992B1 (ko) * 2017-05-25 2022-03-07 주식회사 케이씨텍 기판 처리 장치
CN107088825A (zh) * 2017-06-06 2017-08-25 上海华力微电子有限公司 化学机械研磨机台、温度控制系统及其温度控制方法
US10350724B2 (en) * 2017-07-31 2019-07-16 Taiwan Semiconductor Manufacturing Company, Ltd. Temperature control in chemical mechanical polish
KR102591901B1 (ko) 2017-10-31 2023-10-20 가부시키가이샤 에바라 세이사꾸쇼 연마 패드의 연마면의 온도를 조정하기 위한 열교환기, 해당 열교환기를 구비한 연마 장치, 해당 열교환기를 사용한 기판의 연마 방법 및 연마 패드의 연마면의 온도를 조정하기 위한 프로그램을 기록한 컴퓨터 판독 가능한 기록 매체
JP7059117B2 (ja) * 2017-10-31 2022-04-25 株式会社荏原製作所 研磨パッドの研磨面の温度を調整するための熱交換器、該熱交換器を備えた研磨装置、該熱交換器を用いた基板の研磨方法、および研磨パッドの研磨面の温度を調整するためのプログラムを記録したコンピュータ読み取り可能な記録媒体
CN107962452A (zh) * 2017-11-27 2018-04-27 李三源 一种具有加工刀更换功能的车床
JP2019102473A (ja) * 2017-11-28 2019-06-24 ルネサスエレクトロニクス株式会社 半導体装置、及び半導体装置における電流調整方法
JP6896598B2 (ja) * 2017-12-21 2021-06-30 株式会社荏原製作所 研磨パッドの温度を調整するためのパッド温調機構および研磨装置
JP6975078B2 (ja) 2018-03-15 2021-12-01 キオクシア株式会社 半導体製造装置および半導体装置の製造方法
US10875148B2 (en) 2018-06-08 2020-12-29 Taiwan Semiconductor Manufacturing Company Ltd. Apparatus and methods for chemical mechanical polishing
US11787007B2 (en) * 2018-06-21 2023-10-17 Illinois Tool Works Inc. Methods and apparatus to control a fluid dispenser on a metallurgical specimen preparation machine
WO2020005749A1 (en) * 2018-06-27 2020-01-02 Applied Materials, Inc. Temperature control of chemical mechanical polishing
US12017322B2 (en) * 2018-08-14 2024-06-25 Taiwan Semiconductor Manufacturing Co., Ltd. Chemical mechanical polishing method
JP7066599B2 (ja) * 2018-11-28 2022-05-13 株式会社荏原製作所 温度調整装置及び研磨装置
TWI838459B (zh) * 2019-02-20 2024-04-11 美商應用材料股份有限公司 化學機械拋光裝置及化學機械拋光方法
TWI771668B (zh) 2019-04-18 2022-07-21 美商應用材料股份有限公司 Cmp期間基於溫度的原位邊緣不對稱校正
KR20220003644A (ko) 2019-05-29 2022-01-10 어플라이드 머티어리얼스, 인코포레이티드 화학적 기계적 연마 시스템을 위한 수증기 처리 스테이션들
US11628478B2 (en) 2019-05-29 2023-04-18 Applied Materials, Inc. Steam cleaning of CMP components
US11633833B2 (en) 2019-05-29 2023-04-25 Applied Materials, Inc. Use of steam for pre-heating of CMP components
JP7217202B2 (ja) 2019-05-31 2023-02-02 株式会社荏原製作所 温度調整装置および研磨装置
US11897079B2 (en) 2019-08-13 2024-02-13 Applied Materials, Inc. Low-temperature metal CMP for minimizing dishing and corrosion, and improving pad asperity
JP7397617B2 (ja) * 2019-10-16 2023-12-13 株式会社荏原製作所 研磨装置
JP7236990B2 (ja) 2019-12-09 2023-03-10 株式会社荏原製作所 パッドの表面温度を調整するためのシステムおよび研磨装置
JP7421413B2 (ja) * 2020-05-08 2024-01-24 株式会社荏原製作所 パッド温度調整装置、パッド温度調整方法、および研磨装置
US11693435B2 (en) 2020-06-25 2023-07-04 Applied Materials, Inc. Ethercat liquid flow controller communication for substrate processing systems
JP2023518650A (ja) 2020-06-29 2023-05-08 アプライド マテリアルズ インコーポレイテッド 化学機械研磨のための蒸気発生の制御
EP4171873A4 (en) 2020-06-29 2024-07-24 Applied Materials Inc TEMPERATURE AND SLURRY FLOW RATE CONTROL IN CMP
US11577358B2 (en) 2020-06-30 2023-02-14 Applied Materials, Inc. Gas entrainment during jetting of fluid for temperature control in chemical mechanical polishing
KR20220156633A (ko) 2020-06-30 2022-11-25 어플라이드 머티어리얼스, 인코포레이티드 Cmp 온도 제어를 위한 장치 및 방법
JP2022149635A (ja) 2021-03-25 2022-10-07 株式会社荏原製作所 パッド温度調整装置、および研磨装置
USD1015344S1 (en) * 2021-07-23 2024-02-20 Samsung Electronics Co., Ltd. Display screen or portion thereof with transitional graphical user interface
USD1000473S1 (en) * 2021-07-23 2023-10-03 Samsung Electronics Co., Ltd. Display screen or portion thereof with transitional graphical user interface
USD1012947S1 (en) * 2021-07-23 2024-01-30 Samsung Electronics Co., Ltd. Display screen or portion thereof with transitional graphical user interface
USD1001155S1 (en) * 2021-07-23 2023-10-10 Samsung Electronics Co., Ltd. Display screen or portion thereof with transitional graphical user interface
USD997189S1 (en) * 2021-07-23 2023-08-29 Samsung Electronics Co., Ltd. Electronic device with transitional graphical user interface
CN116638429B (zh) * 2023-06-20 2024-01-16 苏州博宏源机械制造有限公司 一种可调式晶圆边缘抛光装置

Family Cites Families (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4313284A (en) * 1980-03-27 1982-02-02 Monsanto Company Apparatus for improving flatness of polished wafers
US4450652A (en) * 1981-09-04 1984-05-29 Monsanto Company Temperature control for wafer polishing
JPS6113631A (ja) * 1984-06-28 1986-01-21 Toshiba Mach Co Ltd 研磨機の温度制御装置および温度制御方法
JP2674665B2 (ja) * 1989-03-24 1997-11-12 住友電気工業株式会社 半導体ウェーハの研削装置
US5127196A (en) * 1990-03-01 1992-07-07 Intel Corporation Apparatus for planarizing a dielectric formed over a semiconductor substrate
JPH0699350A (ja) * 1992-09-18 1994-04-12 Toshiba Mach Co Ltd 定盤の温度制御方法
US5607718A (en) * 1993-03-26 1997-03-04 Kabushiki Kaisha Toshiba Polishing method and polishing apparatus
JP2850803B2 (ja) * 1995-08-01 1999-01-27 信越半導体株式会社 ウエーハ研磨方法
JPH09123057A (ja) * 1995-10-31 1997-05-13 Sony Corp 基板研磨装置
TW311243B (en) * 1996-07-25 1997-07-21 Ind Tech Res Inst Method for detecting thickness polished by chemical mechanical polish and apparatus thereof
JP3672685B2 (ja) * 1996-11-29 2005-07-20 松下電器産業株式会社 研磨方法及び研磨装置
TW396085B (en) * 1997-07-16 2000-07-01 Ind Tech Res Inst Method and apparatus for chemical mechanical polishing (CMP) with temperature compensation
US5957750A (en) * 1997-12-18 1999-09-28 Micron Technology, Inc. Method and apparatus for controlling a temperature of a polishing pad used in planarizing substrates
JP3693483B2 (ja) * 1998-01-30 2005-09-07 株式会社荏原製作所 研磨装置
US20050118839A1 (en) * 1999-04-23 2005-06-02 Industrial Technology Research Institute Chemical mechanical polish process control method using thermal imaging of polishing pad
EP1602444B1 (en) * 2000-01-31 2008-03-12 Shin-Etsu Handotai Company Limited Polishing method
US20020009953A1 (en) * 2000-06-15 2002-01-24 Leland Swanson Control of CMP removal rate uniformity by selective heating of pad area
US6488571B2 (en) * 2000-12-22 2002-12-03 Intel Corporation Apparatus for enhanced rate chemical mechanical polishing with adjustable selectivity
TW541224B (en) * 2001-12-14 2003-07-11 Promos Technologies Inc Chemical mechanical polishing (CMP) apparatus with temperature control
US20030119427A1 (en) * 2001-12-20 2003-06-26 Misra Sudhanshu Rid Temprature compensated chemical mechanical polishing apparatus and method
US6896586B2 (en) * 2002-03-29 2005-05-24 Lam Research Corporation Method and apparatus for heating polishing pad
JP2004042217A (ja) * 2002-07-12 2004-02-12 Ebara Corp 研磨方法、研磨装置および研磨工具の製造方法
US7169014B2 (en) * 2002-07-18 2007-01-30 Micron Technology, Inc. Apparatuses for controlling the temperature of polishing pads used in planarizing micro-device workpieces
US20060226123A1 (en) * 2005-04-07 2006-10-12 Applied Materials, Inc. Profile control using selective heating
US7201634B1 (en) * 2005-11-14 2007-04-10 Infineon Technologies Ag Polishing methods and apparatus
JP4787063B2 (ja) * 2005-12-09 2011-10-05 株式会社荏原製作所 研磨装置及び研磨方法
US8152594B2 (en) * 2007-01-30 2012-04-10 Ebara Corporation Polishing apparatus
JP4902433B2 (ja) * 2007-06-13 2012-03-21 株式会社荏原製作所 研磨装置の研磨面加熱、冷却装置
DE102007041209B4 (de) * 2007-08-31 2017-11-23 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Polierkopf, der Zonenkontrolle verwendet
DE102007063232B4 (de) * 2007-12-31 2023-06-22 Advanced Micro Devices, Inc. Verfahren zum Polieren eines Substrats
US8172641B2 (en) * 2008-07-17 2012-05-08 Taiwan Semiconductor Manufacturing Co., Ltd. CMP by controlling polish temperature
US8439723B2 (en) * 2008-08-11 2013-05-14 Applied Materials, Inc. Chemical mechanical polisher with heater and method
JP2010183037A (ja) * 2009-02-09 2010-08-19 Toshiba Corp 半導体製造装置
US20100279435A1 (en) * 2009-04-30 2010-11-04 Applied Materials, Inc. Temperature control of chemical mechanical polishing
JP2011079076A (ja) * 2009-10-05 2011-04-21 Toshiba Corp 研磨装置及び研磨方法
JP5547472B2 (ja) * 2009-12-28 2014-07-16 株式会社荏原製作所 基板研磨装置、基板研磨方法、及び基板研磨装置の研磨パッド面温調装置
JP5481417B2 (ja) * 2010-08-04 2014-04-23 株式会社東芝 半導体装置の製造方法
JP2012148376A (ja) * 2011-01-20 2012-08-09 Ebara Corp 研磨方法及び研磨装置
JP5628067B2 (ja) * 2011-02-25 2014-11-19 株式会社荏原製作所 研磨パッドの温度調整機構を備えた研磨装置
JP5695963B2 (ja) * 2011-04-28 2015-04-08 株式会社荏原製作所 研磨方法
JP5898420B2 (ja) * 2011-06-08 2016-04-06 株式会社荏原製作所 研磨パッドのコンディショニング方法及び装置
TWI548483B (zh) * 2011-07-19 2016-09-11 荏原製作所股份有限公司 研磨裝置及方法
CN103029032B (zh) * 2011-10-09 2015-04-08 沈阳理工大学 烧结聚晶金刚石冷板冷却高速研磨装置
CN202491166U (zh) * 2012-02-03 2012-10-17 中芯国际集成电路制造(上海)有限公司 提高晶圆研磨均匀性的研磨头和研磨装置
US20130210173A1 (en) * 2012-02-14 2013-08-15 Taiwan Semiconductor Manufacturing Co., Ltd. Multiple Zone Temperature Control for CMP
CN202462200U (zh) * 2012-03-05 2012-10-03 中芯国际集成电路制造(上海)有限公司 研磨温控系统和研磨装置
JP6340205B2 (ja) * 2014-02-20 2018-06-06 株式会社荏原製作所 研磨パッドのコンディショニング方法及び装置
US10654145B2 (en) * 2015-06-30 2020-05-19 Globalwafers Co., Ltd. Methods and systems for polishing pad control
WO2020005749A1 (en) * 2018-06-27 2020-01-02 Applied Materials, Inc. Temperature control of chemical mechanical polishing

Also Published As

Publication number Publication date
CN110076683B (zh) 2021-06-25
CN104416451B (zh) 2019-03-22
TWI607831B (zh) 2017-12-11
KR20150024781A (ko) 2015-03-09
TWI658897B (zh) 2019-05-11
CN110076683A (zh) 2019-08-02
KR102232431B1 (ko) 2021-03-29
US10710208B2 (en) 2020-07-14
US20180021917A1 (en) 2018-01-25
KR20210035131A (ko) 2021-03-31
US20150079881A1 (en) 2015-03-19
US20170361420A1 (en) 2017-12-21
TWI642514B (zh) 2018-12-01
CN104416451A (zh) 2015-03-18
US10035238B2 (en) 2018-07-31
JP6415643B2 (ja) 2018-10-31
TW201806696A (zh) 2018-03-01
US20190118334A1 (en) 2019-04-25
JP6161999B2 (ja) 2017-07-12
US10195712B2 (en) 2019-02-05
JP2017193048A (ja) 2017-10-26
JP2015044245A (ja) 2015-03-12
TW201806697A (zh) 2018-03-01
TW201507810A (zh) 2015-03-01
KR102371948B1 (ko) 2022-03-08
US9782870B2 (en) 2017-10-10

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